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Volume 63, Issue 8

23 August 1993

All Issues

ISSN 0003-6951

EISSN 1077-3118

Special narrowing of ultrashort laser pulses by self‐phase modulation in optical fibers

M. Oberthaler; R. A. Höpfel

Appl. Phys. Lett. 63, 1017–1019 (1993) https://doi.org/10.1063/1.109820

Abstract

View articletitled, Special narrowing of ultrashort laser pulses by self‐phase modulation in optical fibers

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Light detection sensitivity of a vertical cavity structure used in an optical switch device

Yutaka Yamanaka; Takahiro Numai; Kenichi Kasahara; Keiichi Kuboto

Appl. Phys. Lett. 63, 1020–1022 (1993) https://doi.org/10.1063/1.109821

Abstract

View articletitled, Light detection sensitivity of a vertical cavity structure used in an optical switch device

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Space‐ and time‐resolved investigation of short wavelength x‐ray laser in Li‐like Ca ions

Zhizhan Xu; Pinzhong Fan; Lihuang Lin; Yaolin Li; Xiaofang Wang; Peixiang Lu; Ruxin Li; Shensheng Han; Lan Sun; Aidi Qian; Baifei Shen; Zhiming Jiang; Zhengquan Zhang; Jinzhi Zhou

Appl. Phys. Lett. 63, 1023–1025 (1993) https://doi.org/10.1063/1.109822

Abstract

View articletitled, Space‐ and time‐resolved investigation of short wavelength x‐ray laser in Li‐like Ca ions

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High‐resolution line‐Q measurements of velocity‐selective nonlinear Faraday rotation in Rb vapor

W. D. Lee; J. J. Heuring; J. C. Campbell; W. F. Buell; C. L. Davis

Appl. Phys. Lett. 63, 1026–1028 (1993) https://doi.org/10.1063/1.109823

Abstract

View articletitled, High‐resolution line‐Q measurements of velocity‐selective nonlinear Faraday rotation in Rb vapor

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Epitaxial MgO on GaAs(111) as a buffer layer for z‐cut epitaxial lithium niobate

D. K. Fork; G. B. Anderson

Appl. Phys. Lett. 63, 1029–1031 (1993) https://doi.org/10.1063/1.109824

Abstract

View articletitled, Epitaxial MgO on GaAs(111) as a buffer layer for z‐cut epitaxial lithium niobate

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45‐cm long compression‐molded polymer‐based optical bus

Ray T. Chen; Suning Tang; Tomasz Jannson; Joanna Jannson

Appl. Phys. Lett. 63, 1032–1034 (1993) https://doi.org/10.1063/1.109825

Abstract

View articletitled, 45‐cm long compression‐molded polymer‐based optical bus

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Real‐time in situ detection of SF₆ in a plasma reactor

H. C. Sun; E. A. Whittaker

Appl. Phys. Lett. 63, 1035–1037 (1993) https://doi.org/10.1063/1.109826

Abstract

View articletitled, Real‐time in situ detection of SF6 in a plasma reactor

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Electrical properties of strontium titanate thin films by multi‐ion‐beam reactive sputtering technique

C.‐J. Peng; H. Hu; S. B. Krupanidhi

Appl. Phys. Lett. 63, 1038–1040 (1993) https://doi.org/10.1063/1.109827

Abstract

View articletitled, Electrical properties of strontium titanate thin films by multi‐ion‐beam reactive sputtering technique

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Shallow angle lapping of III‐V semiconductor thin layer structures by an ion beam/chemical etching technique

D. W. Eckart; L. M. Casas

Appl. Phys. Lett. 63, 1041–1043 (1993) https://doi.org/10.1063/1.109828

Abstract

View articletitled, Shallow angle lapping of III‐V semiconductor thin layer structures by an ion beam/chemical etching technique

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Measurement of residual stress in MgO thin films on GaAs by electron microscopy

Marc De Graef; David R. Clarke

Appl. Phys. Lett. 63, 1044–1046 (1993) https://doi.org/10.1063/1.109829

Abstract

View articletitled, Measurement of residual stress in MgO thin films on GaAs by electron microscopy

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Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy

Takayoshi Anan; Shigeo Sugou; Kenichi Nishi; Toshinari Ichihashi

Appl. Phys. Lett. 63, 1047–1049 (1993) https://doi.org/10.1063/1.110765

Abstract

View articletitled, Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy

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Low‐temperature deposition of ferroelectric Bi₄Ti₃O₁₂ films by the reactive ionized cluster beam method

Norio Kaneko; Keisuke Yamamoto; Takeo Tsukamoto

Appl. Phys. Lett. 63, 1050–1052 (1993) https://doi.org/10.1063/1.109830

Abstract

View articletitled, Low‐temperature deposition of ferroelectric Bi4Ti3O12 films by the reactive ionized cluster beam method

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Low‐temperature synthesis of BaTiO₃ thin films on silicon substrates by hydrothermal reaction

R. R. Bacsa; J. P. Dougherty; L. J. Pilione

Appl. Phys. Lett. 63, 1053–1055 (1993) https://doi.org/10.1063/1.109831

Abstract

View articletitled, Low‐temperature synthesis of BaTiO3 thin films on silicon substrates by hydrothermal reaction

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Thermal stability of the unstable fcc‐Fe₅₀Cu₅₀ phase prepared by mechanical alloying

J. Z. Jiang; U. Gonser; C. Gente; R. Bormann

Appl. Phys. Lett. 63, 1056–1058 (1993) https://doi.org/10.1063/1.109832

Abstract

View articletitled, Thermal stability of the unstable fcc‐Fe50Cu50 phase prepared by mechanical alloying

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Quantum wires prepared by molecular beam epitaxy regrowth on patterned AlGaAs buffer layers

K. Eberl; P. Grambow; A. Lehmann; A. Kurtenbach; K. v. Klitzing; D. Heitmann; M. Dilger; M. Hohenstein

Appl. Phys. Lett. 63, 1059–1061 (1993) https://doi.org/10.1063/1.109833

Abstract

View articletitled, Quantum wires prepared by molecular beam epitaxy regrowth on patterned AlGaAs buffer layers

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Ballistic‐electron‐emission microscopy of (100)CoGa/n‐type GaAs interfaces grown by molecular beam epitaxy

Liming Tsau; T. C. Kuo; K. L. Wang

Appl. Phys. Lett. 63, 1062–1064 (1993) https://doi.org/10.1063/1.110774

Abstract

View articletitled, Ballistic‐electron‐emission microscopy of (100)CoGa/n‐type GaAs interfaces grown by molecular beam epitaxy

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Effect of back contact impedance on frequency dependence of capacitance‐voltage measurements on metal/diamond diodes

V. Venkatesan; K. Das; J. A. von Windheim; M. W. Geis

Appl. Phys. Lett. 63, 1065–1067 (1993) https://doi.org/10.1063/1.109834

Abstract

View articletitled, Effect of back contact impedance on frequency dependence of capacitance‐voltage measurements on metal/diamond diodes

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Normal incidence infrared photodetectors using intersubband transitions in GaSb L‐valley quantum wells

Y. Zhang; N. Baruch; W. I. Wang

Appl. Phys. Lett. 63, 1068–1070 (1993) https://doi.org/10.1063/1.109835

Abstract

View articletitled, Normal incidence infrared photodetectors using intersubband transitions in GaSb L‐valley quantum wells

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Ion channeling effect on lattice relaxation in strained In_1−xGa_xAs/InP multiple‐quantum‐well structure

Yukimi Takahashi; K. Kuriyama; Y. Matsui; T. Kamijoh

Appl. Phys. Lett. 63, 1071–1073 (1993) https://doi.org/10.1063/1.109836

Abstract

View articletitled, Ion channeling effect on lattice relaxation in strained In1−xGaxAs/InP multiple‐quantum‐well structure

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Er luminescence centers in GaAs grown by migration‐enhanced epitaxy

Akihito Taguchi; Minoru Kawashima; Kenichiro Takahei; Yoshiji Horikoshi

Appl. Phys. Lett. 63, 1074–1076 (1993) https://doi.org/10.1063/1.109837

Abstract

View articletitled, Er luminescence centers in GaAs grown by migration‐enhanced epitaxy

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Prebreakdown conduction in zinc oxide varistors: Thermionic or tunnel currents and one‐step or two‐step conduction processes

M. S. Castro; C. M. Aldao

Appl. Phys. Lett. 63, 1077–1079 (1993) https://doi.org/10.1063/1.109838

Abstract

View articletitled, Prebreakdown conduction in zinc oxide varistors: Thermionic or tunnel currents and one‐step or two‐step conduction processes

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Dopant compensation effects on impurity trapping and electrical resistivity of ion implanted amorphous silicon

S. Coffa; J. M. Poate

Appl. Phys. Lett. 63, 1080–1082 (1993) https://doi.org/10.1063/1.109839

Abstract

View articletitled, Dopant compensation effects on impurity trapping and electrical resistivity of ion implanted amorphous silicon

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Fermi level dependence of the ambipolar diffusion length in amorphous silicon thin film transistors

R. Schwarz; F. Wang; M. Reissner

Appl. Phys. Lett. 63, 1083–1085 (1993) https://doi.org/10.1063/1.109840

Abstract

View articletitled, Fermi level dependence of the ambipolar diffusion length in amorphous silicon thin film transistors

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Large observed exciton shifts with electric field in InGaAs/InGaAsP stepped quantum wells

T. Tütken; B. J. Hawdon; M. Zimmermann; A. Hangleiter; V. Härle; F. Scholz

Appl. Phys. Lett. 63, 1086–1088 (1993) https://doi.org/10.1063/1.109814

Abstract

View articletitled, Large observed exciton shifts with electric field in InGaAs/InGaAsP stepped quantum wells

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Carrier transport and intersubband population inversion in coupled quantum wells

W. M. Yee; K. A. Shore; E. Schöll

Appl. Phys. Lett. 63, 1089–1091 (1993) https://doi.org/10.1063/1.109815

Abstract

View articletitled, Carrier transport and intersubband population inversion in coupled quantum wells

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Carbon + argon co‐implantation for GaAs p‐channel metal‐semiconductor field‐effect transistors

Yi‐Jen Chan; Chun‐Hung Chen

Appl. Phys. Lett. 63, 1092–1094 (1993) https://doi.org/10.1063/1.109790

Abstract

View articletitled, Carbon + argon co‐implantation for GaAs p‐channel metal‐semiconductor field‐effect transistors

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Method of determining metal contamination by combining p‐type Si and n‐type Si recombination lifetime measurements

Manabu Itsumi

Appl. Phys. Lett. 63, 1095–1097 (1993) https://doi.org/10.1063/1.109791

Abstract

View articletitled, Method of determining metal contamination by combining p‐type Si and n‐type Si recombination lifetime measurements

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Sb/GaSb heterostructures and multilayers

T. D. Golding; J. A. Dura; W. C. Wang; A. Vigliante; S. C. Moss; H. C. Chen; J. H. Miller, Jr.; C. A. Hoffman; J. R. Meyer

Appl. Phys. Lett. 63, 1098–1100 (1993) https://doi.org/10.1063/1.109792

Abstract

View articletitled, Sb/GaSb heterostructures and multilayers

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Control of electric field domain formation in multiquantum well structures

A. Shakouri; I. Gravé; Y. Xu; A. Ghaffari; A. Yariv

Appl. Phys. Lett. 63, 1101–1103 (1993) https://doi.org/10.1063/1.109793

Abstract

View articletitled, Control of electric field domain formation in multiquantum well structures

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Electrical and optical properties of PbTiO₃ thin films on p‐Si grown by metalorganic chemical vapor deposition at low temperature

Y. S. Yoon; W. N. Kang; S. S. Yom; T. W. Kim; M. Jung; H. J. Kim; T. H. Park; H. K. Na

Appl. Phys. Lett. 63, 1104–1106 (1993) https://doi.org/10.1063/1.109794

Abstract

View articletitled, Electrical and optical properties of PbTiO3 thin films on p‐Si grown by metalorganic chemical vapor deposition at low temperature

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Influence of hot phonons on electronic noise in GaAs

Paolo Bordone; Luca Varani; Lino Reggiani; Lucio Rota; Tilmann Kuhn

Appl. Phys. Lett. 63, 1107–1109 (1993) https://doi.org/10.1063/1.109795

Abstract

View articletitled, Influence of hot phonons on electronic noise in GaAs

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Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures

N. Agrawal; F. W. Reier; C. Bornholdt; C. M. Weinert; K. C. Li; P. Harde; R. Langenhorst; G. Grosskopf; L. Berger; M. Wegener

Appl. Phys. Lett. 63, 1110–1112 (1993) https://doi.org/10.1063/1.109796

Abstract

View articletitled, Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures

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Electron cyclotron resonance plasma process for InP passivation

Y. Z. Hu; M. Li; Y. Wang; E. A. Irene; M. Rowe; H. C. Casey, Jr.

Appl. Phys. Lett. 63, 1113–1115 (1993) https://doi.org/10.1063/1.109797

Abstract

View articletitled, Electron cyclotron resonance plasma process for InP passivation

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Fabrication of high aspect ratio silicon pillars of <10 nm diameter

Wei Chen; Haroon Ahmed

Appl. Phys. Lett. 63, 1116–1118 (1993) https://doi.org/10.1063/1.109798

Abstract

View articletitled, Fabrication of high aspect ratio silicon pillars of <10 nm diameter

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Scanning tunneling microscopy investigations of the Si(111) topography produced by etching in 40% NH₄F: Observation of an optimum etch duration

Gregor S. Hsiao; Jorma A. Virtanen; Reginald M. Penner

Appl. Phys. Lett. 63, 1119–1121 (1993) https://doi.org/10.1063/1.109799

Abstract

View articletitled, Scanning tunneling microscopy investigations of the Si(111) topography produced by etching in 40% NH4F: Observation of an optimum etch duration

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Thermal stability of strained In_xGa_1−xAs/In_yAl_1−yAs/InP heterostructures

Brian R. Bennett; Jesús A. del Alamo

Appl. Phys. Lett. 63, 1122–1124 (1993) https://doi.org/10.1063/1.109800

Abstract

View articletitled, Thermal stability of strained InxGa1−xAs/InyAl1−yAs/InP heterostructures

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Enhancement of electrical activation of ion‐implanted phosphorus in Si(100) through two‐step thermal annealing

N. Yu; K. B. Ma; C. Kirschbaum; K. Varahramyan; W. K. Chu

Appl. Phys. Lett. 63, 1125–1127 (1993) https://doi.org/10.1063/1.109801

Abstract

View articletitled, Enhancement of electrical activation of ion‐implanted phosphorus in Si(100) through two‐step thermal annealing

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Gas‐source molecular beam epitaxy growth of Ga_xIn_1−xAs_yP_1−y lattice matched to GaAs

G. Zhang

Appl. Phys. Lett. 63, 1128–1130 (1993) https://doi.org/10.1063/1.109802

Abstract

View articletitled, Gas‐source molecular beam epitaxy growth of GaxIn1−xAsyP1−y lattice matched to GaAs

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Disordering and compensation in Si‐doped AlGaAs/GaAs superlattices using Ga‐ and As‐rich annealing ambients

B. L. Olmsted; S. N. Houde‐Walter

Appl. Phys. Lett. 63, 1131–1133 (1993) https://doi.org/10.1063/1.110764

Abstract

View articletitled, Disordering and compensation in Si‐doped AlGaAs/GaAs superlattices using Ga‐ and As‐rich annealing ambients

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Electrically active, ion implanted boron at the solubility limit in silicon

J. R. Liefting; R. J. Schreutelkamp; J. Vanhellemont; W. Vandervorst; K. Maex; J. S. Custer; F. W. Saris

Appl. Phys. Lett. 63, 1134–1136 (1993) https://doi.org/10.1063/1.109803

Abstract

View articletitled, Electrically active, ion implanted boron at the solubility limit in silicon

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In situ fabrication of InP‐based optical waveguides by excimer laser projection

R. Matz; R. Heydel; W. Göpel

Appl. Phys. Lett. 63, 1137–1139 (1993) https://doi.org/10.1063/1.109804

Abstract

View articletitled, In situ fabrication of InP‐based optical waveguides by excimer laser projection

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Defects in photorefractive CdTe:V: An electron paramagnetic resonance study

H. J. von Bardeleben; J. C. Launay; V. Mazoyer

Appl. Phys. Lett. 63, 1140–1142 (1993) https://doi.org/10.1063/1.109805

Abstract

View articletitled, Defects in photorefractive CdTe:V: An electron paramagnetic resonance study

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Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation

S. J. Pearton; C. R. Abernathy; P. W. Wisk; W. S. Hobson; F. Ren

Appl. Phys. Lett. 63, 1143–1145 (1993) https://doi.org/10.1063/1.109806

Abstract

View articletitled, Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation

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Crossed fluxes technique for pulsed laser deposition of smooth YBa₂Cu₃O_7−x films and multilayers

M. D. Strikovsky; E. B. Klyuenkov; S. V. Gaponov; J. Schubert; C. A. Copetti

Appl. Phys. Lett. 63, 1146–1148 (1993) https://doi.org/10.1063/1.110773

Abstract

View articletitled, Crossed fluxes technique for pulsed laser deposition of smooth YBa2Cu3O7−x films and multilayers

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Optimization of YBa₂Cu₃O_7−δ submicrometer structure fabrication

Roland Barth; Bernd Spangenberg; Christian Jaekel; Hartmut G. Roskos; Heinrich Kurz; Bernhard Holzapfel

Appl. Phys. Lett. 63, 1149–1151 (1993) https://doi.org/10.1063/1.109807

Abstract

View articletitled, Optimization of YBa2Cu3O7−δ submicrometer structure fabrication

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Noise reduction in low‐frequency SQUID measurements with laser‐driven switching

Charles E. Cunningham; George S. Park; Blas Cabrera; Martin E. Huber

Appl. Phys. Lett. 63, 1152–1154 (1993) https://doi.org/10.1063/1.109808

Abstract

View articletitled, Noise reduction in low‐frequency SQUID measurements with laser‐driven switching

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