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Volume 63, Issue 11

13 September 1993

All Issues

ISSN 0003-6951

EISSN 1077-3118

Distributed‐Bragg reflectors and 90° couplers for cylindrical wave devices

Yuan Jiang; Jill Hacker

Appl. Phys. Lett. 63, 1453–1455 (1993) https://doi.org/10.1063/1.109653

Abstract

View articletitled, Distributed‐Bragg reflectors and 90° couplers for cylindrical wave devices

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Low‐voltage hetero‐nipi waveguide modulators with GaAs/AlAs quantum wells

G. W. Yoffe; J. Brübach; F. Karouta; W. C. van der Vleuten; L. M. F. Kaufmann; J. H. Wolter

Appl. Phys. Lett. 63, 1456–1458 (1993) https://doi.org/10.1063/1.109654

Abstract

View articletitled, Low‐voltage hetero‐nipi waveguide modulators with GaAs/AlAs quantum wells

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On the characteristics of narrow‐band resonant modulation of semiconductor lasers beyond relaxation oscillation frequency

K. Y. Lau; J. B. Georges

Appl. Phys. Lett. 63, 1459–1461 (1993) https://doi.org/10.1063/1.109655

Abstract

View articletitled, On the characteristics of narrow‐band resonant modulation of semiconductor lasers beyond relaxation oscillation frequency

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Phase‐matched second‐harmonic generation from free‐standing periodically stacked polymer films

G. Khanarian; M. A. Mortazavi; A. J. East

Appl. Phys. Lett. 63, 1462–1464 (1993) https://doi.org/10.1063/1.109656

Abstract

View articletitled, Phase‐matched second‐harmonic generation from free‐standing periodically stacked polymer films

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Diode‐laser‐pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4‐W average power

H. Q. Le; W. D. Goodhue; P. A. Maki; S. Di Cecca

Appl. Phys. Lett. 63, 1465–1467 (1993) https://doi.org/10.1063/1.109657

Abstract

View articletitled, Diode‐laser‐pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4‐W average power

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Effects of nonuniform current injection on the spectral dynamics of multisection distributed feedback lasers

J. M. Iannelli; T. Schrans; T. R. Chen; Y. H. Zhuang; A. Yariv

Appl. Phys. Lett. 63, 1468–1470 (1993) https://doi.org/10.1063/1.109658

Abstract

View articletitled, Effects of nonuniform current injection on the spectral dynamics of multisection distributed feedback lasers

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Cholesteric/polymer dispersed light shutters

J. L. West; R. B. Akins; J. Francl; J. W. Doane

Appl. Phys. Lett. 63, 1471–1473 (1993) https://doi.org/10.1063/1.109659

Abstract

View articletitled, Cholesteric/polymer dispersed light shutters

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Light emitting nanocrystalline silicon prepared by dry processing: The effect of crystallite size

M. Rückschloss; B. Landkammer; S. Vepřek

Appl. Phys. Lett. 63, 1474–1476 (1993) https://doi.org/10.1063/1.109660

Abstract

View articletitled, Light emitting nanocrystalline silicon prepared by dry processing: The effect of crystallite size

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Transient analysis of a nonlinear fiber ring resonator

F. Javier Fraile‐Peláez; Miguel Prol; David J. Santos; José M. Soto‐Crespo

Appl. Phys. Lett. 63, 1477–1479 (1993) https://doi.org/10.1063/1.109661

Abstract

View articletitled, Transient analysis of a nonlinear fiber ring resonator

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Reflection noise in vertical cavity surface emitting lasers

J. W. Bae; H. Temkin; S. E. Swirhun; W. E. Quinn; P. Brusenbach; C. Parsons; M. Kim; T. Uchida

Appl. Phys. Lett. 63, 1480–1482 (1993) https://doi.org/10.1063/1.109662

Abstract

View articletitled, Reflection noise in vertical cavity surface emitting lasers

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Broadband thermal optical limiter

B. L. Justus; A. L. Huston; A. J. Campillo

Appl. Phys. Lett. 63, 1483–1485 (1993) https://doi.org/10.1063/1.109663

Abstract

View articletitled, Broadband thermal optical limiter

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High temperature (77 °C) operation of 634 nm InGaAlP multiquantum‐well laser diodes with tensile‐strained quantum wells

Minoru Watanabe; John Rennie; Masaki Okajima; Gen‐ichi Hatakoshi

Appl. Phys. Lett. 63, 1486–1488 (1993) https://doi.org/10.1063/1.109664

Abstract

View articletitled, High temperature (77 °C) operation of 634 nm InGaAlP multiquantum‐well laser diodes with tensile‐strained quantum wells

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Mirrorless all‐optical bistability in bacteriorhodopsin

D. V. G. L. N. Rao; F. J. Aranda; B. J. Wiley; J. A. Akkara; D. L. Kaplan; J. F. Roach

Appl. Phys. Lett. 63, 1489–1491 (1993) https://doi.org/10.1063/1.109665

Abstract

View articletitled, Mirrorless all‐optical bistability in bacteriorhodopsin

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Nanoindentation of a supported Au cluster

D. M. Schaefer; A. Patil; R. P. Andres; R. Reifenberger

Appl. Phys. Lett. 63, 1492–1494 (1993) https://doi.org/10.1063/1.109666

Abstract

View articletitled, Nanoindentation of a supported Au cluster

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Aluminum‐arsenide precipitation in an arsenic‐implanted aluminum thin film

Takamaro Kikkawa; Hiroshi Kitajima; Tatsuo Sato; Keiji Shiotani

Appl. Phys. Lett. 63, 1495–1497 (1993) https://doi.org/10.1063/1.109667

Abstract

View articletitled, Aluminum‐arsenide precipitation in an arsenic‐implanted aluminum thin film

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Scaleable stagnation‐flow reactors for uniform materials deposition: Application to combustion synthesis of diamond

K. F. McCarty; E. Meeks; R. J. Kee; A. E. Lutz

Appl. Phys. Lett. 63, 1498–1500 (1993) https://doi.org/10.1063/1.109668

Abstract

View articletitled, Scaleable stagnation‐flow reactors for uniform materials deposition: Application to combustion synthesis of diamond

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Cross‐sectional scanning tunneling microscopy of electrodeposited metal oxide superlattices

T. D. Golden; R. P. Raffaelle; J. A. Switzer

Appl. Phys. Lett. 63, 1501–1503 (1993) https://doi.org/10.1063/1.109669

Abstract

View articletitled, Cross‐sectional scanning tunneling microscopy of electrodeposited metal oxide superlattices

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Misfit dislocation microstructure and kinetics for In_xGa_1−xAs/InP(100) and (110) interfaces under tensile and compressive stress

R. Hull; R. A. Logan; B. E. Weir; J. M. Vandenberg

Appl. Phys. Lett. 63, 1504–1506 (1993) https://doi.org/10.1063/1.109670

Abstract

View articletitled, Misfit dislocation microstructure and kinetics for InxGa1−xAs/InP(100) and (110) interfaces under tensile and compressive stress

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Femtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si_1−xGe_x

H. R. Choo; X. F. Hu; M. C. Downer; V. P. Kesan

Appl. Phys. Lett. 63, 1507–1509 (1993) https://doi.org/10.1063/1.109671

Abstract

View articletitled, Femtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1−xGex

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Passivation and depassivation of silicon dangling bonds at the Si/SiO₂ interface by atomic hydrogen

E. Cartier; J. H. Stathis; D. A. Buchanan

Appl. Phys. Lett. 63, 1510–1512 (1993) https://doi.org/10.1063/1.110758

Abstract

View articletitled, Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

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Mapping of mobile charges on insulator surfaces with the electrostatic force microscope

K. Domanský; Y. Leng; C. C. Williams; J. Janata; D. Petelenz

Appl. Phys. Lett. 63, 1513–1515 (1993) https://doi.org/10.1063/1.110759

Abstract

View articletitled, Mapping of mobile charges on insulator surfaces with the electrostatic force microscope

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Effects of electron‐beam‐assisted dry etching on optical and electrical properties

Heiji Watanabe; Yukinori Ochiai; Shinji Matsui

Appl. Phys. Lett. 63, 1516–1518 (1993) https://doi.org/10.1063/1.110760

Abstract

View articletitled, Effects of electron‐beam‐assisted dry etching on optical and electrical properties

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Shallow Pb³⁺ hole traps in lead zirconate titanate ferroelectrics

John Robertson; William L. Warren; Bruce A. Tuttle; Duane Dimos; Donald M. Smyth

Appl. Phys. Lett. 63, 1519–1521 (1993) https://doi.org/10.1063/1.110761

Abstract

View articletitled, Shallow Pb3+ hole traps in lead zirconate titanate ferroelectrics

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Far‐infrared photon‐induced current in a quantum point contact

Rolf A. Wyss; C. C. Eugster; J. A. del Alamo; Qing Hu

Appl. Phys. Lett. 63, 1522–1524 (1993) https://doi.org/10.1063/1.110736

Abstract

View articletitled, Far‐infrared photon‐induced current in a quantum point contact

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Anomalous doping behavior of in situ boron‐doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor deposition

Horng‐Chih Lin; Hsiao‐Yi Lin; Chun‐Yen Chang; Tan‐Fu Lei; P. J. Wang; Ray‐Chern Deng; Jandel Lin; Chih‐Yeh Chao

Appl. Phys. Lett. 63, 1525–1527 (1993) https://doi.org/10.1063/1.110737

Abstract

View articletitled, Anomalous doping behavior of in situ boron‐doped polycrystalline silicon deposited by ultrahigh vacuum chemical vapor deposition

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Crystallographic selective growth of GaAs by atomic layer epitaxy

Hideo Isshiki; Yoshinobu Aoyagi; Takuo Sugano; Sohachi Iwai; Takashi Meguro

Appl. Phys. Lett. 63, 1528–1530 (1993) https://doi.org/10.1063/1.110738

Abstract

View articletitled, Crystallographic selective growth of GaAs by atomic layer epitaxy

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Reversible changes of the charge state of donor/hydrogen complexes initiated by hole capture in silicon

C. H. Seager; R. A. Anderson

Appl. Phys. Lett. 63, 1531–1533 (1993) https://doi.org/10.1063/1.110739

Abstract

View articletitled, Reversible changes of the charge state of donor/hydrogen complexes initiated by hole capture in silicon

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Intrasubband plasmons in delta‐doped InGaAs single quantum wells

L. H. Peng; C. G. Fonstad

Appl. Phys. Lett. 63, 1534–1536 (1993) https://doi.org/10.1063/1.110740

Abstract

View articletitled, Intrasubband plasmons in delta‐doped InGaAs single quantum wells

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Heterostructure bipolar transistor with enhanced forward diffusion of minority carriers

Serge Luryi; Anatoly A. Grinberg; Vera B. Gorfinkel

Appl. Phys. Lett. 63, 1537–1539 (1993) https://doi.org/10.1063/1.110741

Abstract

View articletitled, Heterostructure bipolar transistor with enhanced forward diffusion of minority carriers

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Improved strain analysis in semiconductor crystals by x‐ray diffractometry enhanced with ultrasound

E. Zolotoyabko; B. Sander; Y. Komem; B. Kantor

Appl. Phys. Lett. 63, 1540–1542 (1993) https://doi.org/10.1063/1.110742

Abstract

View articletitled, Improved strain analysis in semiconductor crystals by x‐ray diffractometry enhanced with ultrasound

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Beryllium δ doping studies in InP and Ga_0.47In_0.53As during metalorganic molecular beam epitaxy

Dan Ritter; R. A. Hamm; M. B. Panish; M. Geva

Appl. Phys. Lett. 63, 1543–1545 (1993) https://doi.org/10.1063/1.110743

Abstract

View articletitled, Beryllium δ doping studies in InP and Ga0.47In0.53As during metalorganic molecular beam epitaxy

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Crystallized mixed‐phase silicon films for thin film transistors on glass substrates

Apostolos T. Voutsas; Miltiadis K. Hatalis

Appl. Phys. Lett. 63, 1546–1548 (1993) https://doi.org/10.1063/1.110744

Abstract

View articletitled, Crystallized mixed‐phase silicon films for thin film transistors on glass substrates

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Synthesis of luminescent silicon clusters by spark ablation

Winston A. Saunders; Peter C. Sercel; R. B. Lee; Harry A. Atwater; Kerry J. Vahala; Richard C. Flagan; Ernesto J. Escorcia‐Aparcio

Appl. Phys. Lett. 63, 1549–1551 (1993) https://doi.org/10.1063/1.110745

Abstract

View articletitled, Synthesis of luminescent silicon clusters by spark ablation

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Photoinduced charge transfer and charge carrier generation in polysilane films containing C₆₀ molecules

R. G. Kepler; P. A. Cahill

Appl. Phys. Lett. 63, 1552–1554 (1993) https://doi.org/10.1063/1.110746

Abstract

View articletitled, Photoinduced charge transfer and charge carrier generation in polysilane films containing C60 molecules

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Monolithic optoelectronic transistor: A new smart‐pixel device

B. F. Aull; K. B. Nichols; P. A. Maki; S. C. Palmateer; E. R. Brown; T. A. Lind

Appl. Phys. Lett. 63, 1555–1557 (1993) https://doi.org/10.1063/1.110747

Abstract

View articletitled, Monolithic optoelectronic transistor: A new smart‐pixel device

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Positively charged states of a hydrogen atom in p‐type InP

Hoon Young Cho; Won Chel Choi; Suk‐Ki Min

Appl. Phys. Lett. 63, 1558–1560 (1993) https://doi.org/10.1063/1.110748

Abstract

View articletitled, Positively charged states of a hydrogen atom in p‐type InP

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Improved process for high‐T_c superconducting step‐edge junctions

J. Z. Sun; W. J. Gallagher; A. C. Callegari; V. Foglietti; R. H. Koch

Appl. Phys. Lett. 63, 1561–1563 (1993) https://doi.org/10.1063/1.110749

Abstract

View articletitled, Improved process for high‐Tc superconducting step‐edge junctions

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Measurement of parametric interactions in YBa₂Cu₃O_7−x step edge junctions

Aron Z. Kain; H. R. Fetterman

Appl. Phys. Lett. 63, 1564–1566 (1993) https://doi.org/10.1063/1.110750

Abstract

View articletitled, Measurement of parametric interactions in YBa2Cu3O7−x step edge junctions

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Elimination of pinholes in epitaxial thin film YBa₂Cu₃O_7−x/SrTiO₃/PrGaO₃ multilayers

E. Olsson; G. Brorsson; P. Å. Nilsson; T. Claeson

Appl. Phys. Lett. 63, 1567–1569 (1993) https://doi.org/10.1063/1.110751

Abstract

View articletitled, Elimination of pinholes in epitaxial thin film YBa2Cu3O7−x/SrTiO3/PrGaO3 multilayers

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Interface study of Nb/ZrO_x‐Zr/Nb Josephson junctions

Shin’ichi Morohashi; Yuji Kataoka; Teruo Yagishita; Shinya Hasuo

Appl. Phys. Lett. 63, 1570–1572 (1993) https://doi.org/10.1063/1.110752

Abstract

View articletitled, Interface study of Nb/ZrOx‐Zr/Nb Josephson junctions

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Columnar defects in YBa₂Cu₃O_7−δ induced by irradiation with high energy heavy ions

R. Wheeler; M. A. Kirk; A. D. Marwick; L. Civale; F. H. Holtzberg

Appl. Phys. Lett. 63, 1573–1575 (1993) https://doi.org/10.1063/1.110753

Abstract

View articletitled, Columnar defects in YBa2Cu3O7−δ induced by irradiation with high energy heavy ions

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a‐axis oriented epitaxial YBa₂Cu₃O_7−y/PrBa₂Cu_3−xNb_xO_7−z multistructures

S. Hontsu; N. Mukai; J. Ishii; T. Kawai; S. Kawai

Appl. Phys. Lett. 63, 1576–1578 (1993) https://doi.org/10.1063/1.110809

Abstract

View articletitled, a‐axis oriented epitaxial YBa2Cu3O7−y/PrBa2Cu3−xNbxO7−z multistructures

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Granular giant magnetoresistance at low fields in bilayer thin films

K. R. Coffey; T. L. Hylton; M. A. Parker; J. K. Howard

Appl. Phys. Lett. 63, 1579–1581 (1993) https://doi.org/10.1063/1.110754

Abstract

View articletitled, Granular giant magnetoresistance at low fields in bilayer thin films

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Magnetic easy axis randomly in‐plane oriented barium hexaferrite thin film media

Xiaoyu Sui; Mark H. Kryder

Appl. Phys. Lett. 63, 1582–1584 (1993) https://doi.org/10.1063/1.110755

Abstract

View articletitled, Magnetic easy axis randomly in‐plane oriented barium hexaferrite thin film media

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A novel hysteresis loop and indirect exchange coupling in Co/Pt/Gd/Pt multilayer films

K. Takanashi; H. Kurokawa; H. Fujimori

Appl. Phys. Lett. 63, 1585–1587 (1993) https://doi.org/10.1063/1.110756

Abstract

View articletitled, A novel hysteresis loop and indirect exchange coupling in Co/Pt/Gd/Pt multilayer films

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