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Quantum capture limited modulation bandwidth of quantum well, wire, and dot lasers
Appl. Phys. Lett. 62, 2307–2309 (1993)
https://doi.org/10.1063/1.109400
Damping of the relaxation resonance in multiple‐quantum‐well lasers by slow interwell transport
Appl. Phys. Lett. 62, 2316–2318 (1993)
https://doi.org/10.1063/1.109403
Gibbs free‐energy difference between the glass and crystalline phases of a Ni‐Zr alloy
Appl. Phys. Lett. 62, 2319–2321 (1993)
https://doi.org/10.1063/1.109404
Preparation of coiled carbon fibers by pyrolysis of acetylene using a Ni catalyst and sulfur or phosphorus compound impurity
Appl. Phys. Lett. 62, 2322–2323 (1993)
https://doi.org/10.1063/1.109634
TiNCl formation during low‐temperature, low‐pressure chemical vapor deposition of TiN
Appl. Phys. Lett. 62, 2326–2328 (1993)
https://doi.org/10.1063/1.109406
Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria‐stabilized zirconia
Appl. Phys. Lett. 62, 2332–2334 (1993)
https://doi.org/10.1063/1.109408
Reduction of secondary defect density by C and B implants in GexSi1−x layers formed by high dose Ge implantation in (100) Si
Appl. Phys. Lett. 62, 2335–2337 (1993)
https://doi.org/10.1063/1.109409
Direct measurement of size fluctuation in reverse‐mesa etched quantum wire structures by the atomic force microscope
Appl. Phys. Lett. 62, 2350–2352 (1993)
https://doi.org/10.1063/1.109415
Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gas
Appl. Phys. Lett. 62, 2353–2355 (1993)
https://doi.org/10.1063/1.109416
Carbon doping in GaAs layers grown with trimethylgallium and solid arsenic in a mixture of hydrogen and nitrogen
Appl. Phys. Lett. 62, 2359–2361 (1993)
https://doi.org/10.1063/1.109389
Nanometer scale fabrication in mercury cadmium telluride using methane/hydrogen electron cyclotron resonance microwave plasmas
Appl. Phys. Lett. 62, 2362–2364 (1993)
https://doi.org/10.1063/1.109390
Water trapping of point defects in interlayer SiO2 films and its contribution to the reduction of hot‐carrier degradation
Appl. Phys. Lett. 62, 2365–2366 (1993)
https://doi.org/10.1063/1.109391
Photoemission spectroscopy of Al0.27Ga0.73As:As photodiodes
D. T. McInturff; J. M. Woodall; A. C. Warren; N. Braslau; G. D. Pettit; P. D. Kirchner; M. R. Melloch
Appl. Phys. Lett. 62, 2367–2368 (1993)
https://doi.org/10.1063/1.109392
Gas‐source molecular beam epitaxial growth, characterization, and light‐emitting diode application of InxGa1−xP on GaP(100)
Appl. Phys. Lett. 62, 2369–2371 (1993)
https://doi.org/10.1063/1.109367
High‐speed InP/InGaAs double‐heterostructure bipolar transistors with suppressed collector current blocking
Appl. Phys. Lett. 62, 2372–2374 (1993)
https://doi.org/10.1063/1.109368
Atomic layer epitaxy of GaAs with a 2 μm/h growth rate
Appl. Phys. Lett. 62, 2378–2380 (1993)
https://doi.org/10.1063/1.109370
Time resolved photoluminescence of porous silicon: Evidence for tunneling limited recombination in a band of localized states
Appl. Phys. Lett. 62, 2381–2383 (1993)
https://doi.org/10.1063/1.109371
Enhancement of photosensitivity by ultraviolet irradiation and photoconductivity spectra of diamond thin films
Appl. Phys. Lett. 62, 2384–2386 (1993)
https://doi.org/10.1063/1.109372
Optical characterization of pure ZnSe films grown on GaAs
Appl. Phys. Lett. 62, 2387–2389 (1993)
https://doi.org/10.1063/1.109373
High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
Appl. Phys. Lett. 62, 2390–2392 (1993)
https://doi.org/10.1063/1.109374
Blocking of Γ→X transfer in GaAs/AlAs short period superlattices due to X‐state band filling
Appl. Phys. Lett. 62, 2393–2395 (1993)
https://doi.org/10.1063/1.109375
Surface‐enhanced Raman scattering of amorphous silicon‐carbon films
Appl. Phys. Lett. 62, 2396–2398 (1993)
https://doi.org/10.1063/1.109376
High temperature characteristics of InGaAsP/InP laser structures
Appl. Phys. Lett. 62, 2402–2404 (1993)
https://doi.org/10.1063/1.109378
Further evidence for quantum confinement in porous silicon
Appl. Phys. Lett. 62, 2408–2410 (1993)
https://doi.org/10.1063/1.109380
Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence
Appl. Phys. Lett. 62, 2411–2412 (1993)
https://doi.org/10.1063/1.109381
Strain effects in the intersubband transitions of narrow InGaAs quantum wells
Appl. Phys. Lett. 62, 2413–2415 (1993)
https://doi.org/10.1063/1.109382
In‐plane effective mass in narrow quantum wells of nonparabolic semiconductors
Appl. Phys. Lett. 62, 2416–2418 (1993)
https://doi.org/10.1063/1.109633
Penetration depth λ(T) of YBa2Cu3O7−δ films determined from the kinetic inductance
Appl. Phys. Lett. 62, 2419–2421 (1993)
https://doi.org/10.1063/1.109383
In situ, rf plasma deposition of Bi2Sr2Ca2Cu3Ox thin films at atmospheric pressure
Appl. Phys. Lett. 62, 2422–2424 (1993)
https://doi.org/10.1063/1.109384
Superconducting Y1Ba2Cu3O7−x/Nd1.85Ce0.15CuO4−y bilayer thin films
S. N. Mao; X. X. Xi; Qi Li; I. Takeuchi; S. Bhattacharya; C. Kwon; C. Doughty; A. Walkenhorst; T. Venkatesan; C. B. Whan; J. L. Peng; R. L. Greene
Appl. Phys. Lett. 62, 2425–2427 (1993)
https://doi.org/10.1063/1.109385
Epitaxial YBa2Cu3O7−y bolometers on micromachined windows in silicon wafers
Appl. Phys. Lett. 62, 2428–2430 (1993)
https://doi.org/10.1063/1.109386
Limitations of magnetoresistive sensors based on the giant magnetoresistive effect in granular magnetic composites
Appl. Phys. Lett. 62, 2431–2433 (1993)
https://doi.org/10.1063/1.109387
Properties of epitaxial SrRuO3 thin films
Appl. Phys. Lett. 62, 2434–2436 (1993)
https://doi.org/10.1063/1.109388
Al2O3+x/Al interface formation by promoted oxidation using an alkali metal and removal of the catalyst
Appl. Phys. Lett. 62, 2437–2439 (1993)
https://doi.org/10.1063/1.109364
Effect of interface layer on the microstructure and electromigration resistance of Al‐Si‐Cu alloy on TiN/Ti substrates
Appl. Phys. Lett. 62, 2443–2445 (1993)
https://doi.org/10.1063/1.109366
Response to ‘‘Comment on ‘Electron holographic study of ferroelectric domain wells’ ’’
Appl. Phys. Lett. 62, 2447 (1993)
https://doi.org/10.1063/1.109341
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Shining light in a heartbeat: Controlling cardiac bioelectricity with membrane-targeted photoswitches
Chiara Florindi, Giulia Simoncini, et al.
First-principles study of defects and doping limits in CaO
Zhenkun Yuan, Geoffroy Hautier