Skip Nav Destination

Issues

Select Decade

Select Year

Issue

Volume 62, Issue 18

3 May 1993

All Issues

ISSN 0003-6951

EISSN 1077-3118

Whispering‐gallery‐mode dye lasers in blue, green, and orange regions using dye‐doped, solid, small spheres

Hiroshi Taniguchi; Tamiya Fujiwara; Hiroshi Yamada; Shinji Tanosaki; Mamoru Baba

Appl. Phys. Lett. 62, 2155–2157 (1993) https://doi.org/10.1063/1.109636

Abstract

View articletitled, Whispering‐gallery‐mode dye lasers in blue, green, and orange regions using dye‐doped, solid, small spheres

Open the PDF for in another window

Phase characteristics of reflection electroabsorption modulators

Daxin Liu; B. Pezeshki; S. M. Lord; J. S. Harris, Jr.

Appl. Phys. Lett. 62, 2158–2160 (1993) https://doi.org/10.1063/1.109454

Abstract

View articletitled, Phase characteristics of reflection electroabsorption modulators

Open the PDF for in another window

Second harmonic generation in disperse‐red‐labeled poly(methyl methacrylate) Langmuir–Blodgett film

Kotaro Kajikawa; Takeshi Anzai; Hideo Takezoe; Atsuo Fukuda; Shuji Okada; Hiro Matsuda; Hachiro Nakanishi; Takashi Abe; Hiroshi Ito

Appl. Phys. Lett. 62, 2161–2163 (1993) https://doi.org/10.1063/1.109455

Abstract

View articletitled, Second harmonic generation in disperse‐red‐labeled poly(methyl methacrylate) Langmuir–Blodgett film

Open the PDF for in another window

Coherent photon seeding of actively mode locked laser diodes

Hitoshi Kawaguchi; Abedin Kazi Sarwar

Appl. Phys. Lett. 62, 2164–2166 (1993) https://doi.org/10.1063/1.109456

Abstract

View articletitled, Coherent photon seeding of actively mode locked laser diodes

Open the PDF for in another window

Photoinduced refractive index change in a photoconductive electro‐optic polymer

T. Kawakami; N. Sonoda

Appl. Phys. Lett. 62, 2167–2169 (1993) https://doi.org/10.1063/1.109457

Abstract

View articletitled, Photoinduced refractive index change in a photoconductive electro‐optic polymer

Open the PDF for in another window

InGaAs/GaAs strained quantum wire lasers grown by organometallic chemical vapor deposition on nonplanar substrates

M. Walther; E. Kapon; C. Caneau; D. M. Hwang; L. M. Schiavone

Appl. Phys. Lett. 62, 2170–2172 (1993) https://doi.org/10.1063/1.109458

Abstract

View articletitled, InGaAs/GaAs strained quantum wire lasers grown by organometallic chemical vapor deposition on nonplanar substrates

Open the PDF for in another window

KrF excimer laser projection patterned deposition of aluminum from triethylamine alane as adsorbate precursor

F. Foulon; M. Stuke

Appl. Phys. Lett. 62, 2173–2175 (1993) https://doi.org/10.1063/1.109459

Abstract

View articletitled, KrF excimer laser projection patterned deposition of aluminum from triethylamine alane as adsorbate precursor

Open the PDF for in another window

High‐temperature continuous operation above 200 °C of GaAs lasers using an InGaAlP cladding layer

K. Itaya; G. Hatakoshi; Y. Nishikawa; M. Ishikawa; M. Okajima

Appl. Phys. Lett. 62, 2176–2178 (1993) https://doi.org/10.1063/1.109460

Abstract

View articletitled, High‐temperature continuous operation above 200 °C of GaAs lasers using an InGaAlP cladding layer

Open the PDF for in another window

Third‐harmonic generation in GeO₂‐doped silica single‐mode optical fibers

D. L. Nicácio; E. A. Gouveia; N M. Borges; A. S. Gouveia‐Neto

Appl. Phys. Lett. 62, 2179–2181 (1993) https://doi.org/10.1063/1.109461

Abstract

View articletitled, Third‐harmonic generation in GeO2‐doped silica single‐mode optical fibers

Open the PDF for in another window

Polyazomethine conjugated polymer film with second order nonlinear optical properties fabricated by electric‐field‐assisted chemical vapor deposition

Satoshi Tatsuura; Wataru Sotoyama; Katsusada Motoyoshi; Azuma Matsuura; Tomoaki Hayano; Tetsuzo Yoshimura

Appl. Phys. Lett. 62, 2182–2184 (1993) https://doi.org/10.1063/1.109462

Abstract

View articletitled, Polyazomethine conjugated polymer film with second order nonlinear optical properties fabricated by electric‐field‐assisted chemical vapor deposition

Open the PDF for in another window

Subnanosecond optically addressable generalized optical crossbar switch with an aggregate throughput rate of 4.2 Gbit/s

Zeqi Pan; Mario Dagenais

Appl. Phys. Lett. 62, 2185–2187 (1993) https://doi.org/10.1063/1.109463

Abstract

View articletitled, Subnanosecond optically addressable generalized optical crossbar switch with an aggregate throughput rate of 4.2 Gbit/s

Open the PDF for in another window

Group‐velocity‐matched second‐harmonic generation: An efficient scheme for femtosecond ultraviolet pulse generation in periodically domain‐inverted β‐BaB₂O₄

K. Hayata; M. Koshiba

Appl. Phys. Lett. 62, 2188–2190 (1993) https://doi.org/10.1063/1.109464

Abstract

View articletitled, Group‐velocity‐matched second‐harmonic generation: An efficient scheme for femtosecond ultraviolet pulse generation in periodically domain‐inverted β‐BaB2O4

Open the PDF for in another window

Experimental study of volume holographic interconnects using random patterns

Hyuk Lee; Sang Kyu Jin

Appl. Phys. Lett. 62, 2191–2193 (1993) https://doi.org/10.1063/1.109438

Abstract

View articletitled, Experimental study of volume holographic interconnects using random patterns

Open the PDF for in another window

Buried modes in combined Ti diffused and Li outdiffused LiNbO₃ slab waveguides

Eli Arad; Shlomo Ruschin; David Nir

Appl. Phys. Lett. 62, 2194–2196 (1993) https://doi.org/10.1063/1.109439

Abstract

View articletitled, Buried modes in combined Ti diffused and Li outdiffused LiNbO3 slab waveguides

Open the PDF for in another window

Simulation of the shielding of dust particles in low pressure glow discharges

Seung J. Choi; Mark J. Kushner

Appl. Phys. Lett. 62, 2197–2199 (1993) https://doi.org/10.1063/1.109440

Abstract

View articletitled, Simulation of the shielding of dust particles in low pressure glow discharges

Open the PDF for in another window

Biaxial Young’s modulus of silicon carbide thin films

A. Jean; M. A. El Khakani; M. Chaker; S. Boily; E. Gat; J. C. Kieffer; H. Pépin; M. F. Ravet; F. Rousseaux

Appl. Phys. Lett. 62, 2200–2202 (1993) https://doi.org/10.1063/1.109441

Abstract

View articletitled, Biaxial Young’s modulus of silicon carbide thin films

Open the PDF for in another window

Effect of Cu content on the reaction growth and morphology of an Al₁₂W compound between Al‐Cu/Ti‐W bilayers

M. Park; S. J. Krause; S. R. Wilson

Appl. Phys. Lett. 62, 2203–2205 (1993) https://doi.org/10.1063/1.109442

Abstract

View articletitled, Effect of Cu content on the reaction growth and morphology of an Al12W compound between Al‐Cu/Ti‐W bilayers

Open the PDF for in another window

Dislocation glide in {110} planes in semiconductors with diamond or zinc‐blende structure

M. Albrecht; H. P. Strunk; R. Hull; J. M. Bonar

Appl. Phys. Lett. 62, 2206–2208 (1993) https://doi.org/10.1063/1.109443

Abstract

View articletitled, Dislocation glide in {110} planes in semiconductors with diamond or zinc‐blende structure

Open the PDF for in another window

Observation of arsenic precipitates in GaInAs grown at low temperature on InP

J. P. Ibbetson; J. S. Speck; A. C. Gossard; U. K. Mishra

Appl. Phys. Lett. 62, 2209–2211 (1993) https://doi.org/10.1063/1.109418

Abstract

View articletitled, Observation of arsenic precipitates in GaInAs grown at low temperature on InP

Open the PDF for in another window

Zinc doping of Ga_0.51In_0.49P grown on GaAs(100) substrates by chemical beam epitaxy

R. M. Kapre; W. T. Tsang; N. T. Ha; M. C. Wu; Y. K. Chen

Appl. Phys. Lett. 62, 2212–2214 (1993) https://doi.org/10.1063/1.109419

Abstract

View articletitled, Zinc doping of Ga0.51In0.49P grown on GaAs(100) substrates by chemical beam epitaxy

Open the PDF for in another window

Ge_0.2Si_0.8/Si Bragg‐reflector mirrors for optoelectronic device applications

Ravi Kuchibhotla; Joe C. Campbell; John C. Bean; Larry Peticolas; Robert Hull

Appl. Phys. Lett. 62, 2215–2217 (1993) https://doi.org/10.1063/1.109420

Abstract

View articletitled, Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications

Open the PDF for in another window

X‐ray characterization of Si δ‐doping in GaAs

L. Hart; M. R. Fahy; R. C. Newman; P. F. Fewster

Appl. Phys. Lett. 62, 2218–2220 (1993) https://doi.org/10.1063/1.109421

Abstract

View articletitled, X‐ray characterization of Si δ‐doping in GaAs

Open the PDF for in another window

Local silicon molecular beam epitaxy with microshadow masks

E. Hammerl; I. Eisele

Appl. Phys. Lett. 62, 2221–2223 (1993) https://doi.org/10.1063/1.109422

Abstract

View articletitled, Local silicon molecular beam epitaxy with microshadow masks

Open the PDF for in another window

Porous silicon formation: Morphological stability analysis

Ying Kang; Jacob Jorné

Appl. Phys. Lett. 62, 2224–2226 (1993) https://doi.org/10.1063/1.109423

Abstract

View articletitled, Porous silicon formation: Morphological stability analysis

Open the PDF for in another window

Transient response of lateral photodetectors

E. H. Böttcher; F. Hieronymi; D. Kuhl; E. Dröge; D. Bimberg

Appl. Phys. Lett. 62, 2227–2229 (1993) https://doi.org/10.1063/1.109424

Abstract

View articletitled, Transient response of lateral photodetectors

Open the PDF for in another window

Spontaneous spin polarization of ballistic electrons in single‐mode quantum wires due to spin splitting

Gerhard Fasol; Hiroyuki Sakaki

Appl. Phys. Lett. 62, 2230–2232 (1993) https://doi.org/10.1063/1.109425

Abstract

View articletitled, Spontaneous spin polarization of ballistic electrons in single‐mode quantum wires due to spin splitting

Open the PDF for in another window

Effect of electron heating on electron capture cross section in very small metal‐oxide‐semiconductor transistors

Z. M. Shi; J.‐P. Miéville; M. Dutoit

Appl. Phys. Lett. 62, 2233–2235 (1993) https://doi.org/10.1063/1.109426

Abstract

View articletitled, Effect of electron heating on electron capture cross section in very small metal‐oxide‐semiconductor transistors

Open the PDF for in another window

Inhibition of surface‐related electrical breakdown of long p⁺‐i‐n⁺ silicon structures

F. E. Peterkin; P. F. Williams; B. J. Hankla; L. L. Buresh; S. A. Woodward

Appl. Phys. Lett. 62, 2236–2238 (1993) https://doi.org/10.1063/1.109427

Abstract

View articletitled, Inhibition of surface‐related electrical breakdown of long p+‐i‐n+ silicon structures

Open the PDF for in another window

Graded InGaAs/GaAs strained‐layer single quantum well laser

Tae‐Kyung Yoo; Robert Spencer; William J. Schaff; Lester F. Eastman; Ki‐Woong Chung; Doyeol Ahn

Appl. Phys. Lett. 62, 2239–2241 (1993) https://doi.org/10.1063/1.109428

Abstract

View articletitled, Graded InGaAs/GaAs strained‐layer single quantum well laser

Open the PDF for in another window

Electroluminescence in oxygen co‐doped ZnS:TmF₃ and ZnS:Tm, Li thin‐film devices

S. H. Sohn; Y. Hamakawa

Appl. Phys. Lett. 62, 2242–2244 (1993) https://doi.org/10.1063/1.109429

Abstract

View articletitled, Electroluminescence in oxygen co‐doped ZnS:TmF3 and ZnS:Tm, Li thin‐film devices

Open the PDF for in another window

Enhancement of zone‐folding effects in the second order response of the [(Si)₅/(Ge)₅]/(Si_0.4Ge_0.6)(001) superlattice

Ed Ghahramani; J. E. Sipe

Appl. Phys. Lett. 62, 2245–2247 (1993) https://doi.org/10.1063/1.109430

Abstract

View articletitled, Enhancement of zone‐folding effects in the second order response of the [(Si)5/(Ge)5]/(Si0.4Ge0.6)(001) superlattice

Open the PDF for in another window

Auger electron spectroscopy of molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium

H. Ohno; S. Goto; Y. Nomura; Y. Morishita; A. Watanabe; Y. Katayama

Appl. Phys. Lett. 62, 2248–2250 (1993) https://doi.org/10.1063/1.109635

Abstract

View articletitled, Auger electron spectroscopy of molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium

Open the PDF for in another window

Monte Carlo calculation of electron relaxation times in perfect and disordered quantum wire laser structures

Igor Vurgaftman; Jasprit Singh

Appl. Phys. Lett. 62, 2251–2253 (1993) https://doi.org/10.1063/1.109431

Abstract

View articletitled, Monte Carlo calculation of electron relaxation times in perfect and disordered quantum wire laser structures

Open the PDF for in another window

X‐ray photoelectron spectroscopy study of GaAs surface exposed to a rf hydrogen plasma

C. Debiemme‐Chouvy; D. Ballutaud; J. C. Pesant; A. Etcheberry

Appl. Phys. Lett. 62, 2254–2255 (1993) https://doi.org/10.1063/1.109432

Abstract

View articletitled, X‐ray photoelectron spectroscopy study of GaAs surface exposed to a rf hydrogen plasma

Open the PDF for in another window

Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal‐insulator‐semiconductor devices

P. Fontaine; D. Goguenheim; D. Deresmes; D. Vuillaume; M. Garet; F. Rondelez

Appl. Phys. Lett. 62, 2256–2258 (1993) https://doi.org/10.1063/1.109433

Abstract

View articletitled, Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal‐insulator‐semiconductor devices

Open the PDF for in another window

Electrical properties of the SiN_x/InP interface passivated using H₂S

A. Kapila; X. Si; V. Malhotra

Appl. Phys. Lett. 62, 2259–2261 (1993) https://doi.org/10.1063/1.109434

Abstract

View articletitled, Electrical properties of the SiNx/InP interface passivated using H2S

Open the PDF for in another window

Observation of random‐telegraph noise in resonant‐tunneling diodes

Sze‐Him Ng; Charles Surya; Elliott R. Brown; Paul A. Maki

Appl. Phys. Lett. 62, 2262–2264 (1993) https://doi.org/10.1063/1.109435

Abstract

View articletitled, Observation of random‐telegraph noise in resonant‐tunneling diodes

Open the PDF for in another window

Quasiperiodic contrast inhomogeneities induced by clusters in the In_0.52Al_0.48As/InP interface

F. Peiro; A. Cornet; J. R. Morante; A. Georgakilas; A. Christou

Appl. Phys. Lett. 62, 2265–2267 (1993) https://doi.org/10.1063/1.109436

Abstract

View articletitled, Quasiperiodic contrast inhomogeneities induced by clusters in the In0.52Al0.48As/InP interface

Open the PDF for in another window

Photoconductive sampling probe with 2.3‐ps temporal resolution and 4‐μV sensitivity

Joungho Kim; Steven Williamson; John Nees; Shin‐ichi Wakana; John Whitaker

Appl. Phys. Lett. 62, 2268–2270 (1993) https://doi.org/10.1063/1.109437

Abstract

View articletitled, Photoconductive sampling probe with 2.3‐ps temporal resolution and 4‐μV sensitivity

Open the PDF for in another window

Gas source molecular beam epitaxy of FeSi₂/Si(111) heterostructures

H. Ch. Schäfer; B. Rösen; H. Moritz; A. Rizzi; B. Lengeler; H. Lüth; D. Gerthsen

Appl. Phys. Lett. 62, 2271–2273 (1993) https://doi.org/10.1063/1.109411

Abstract

View articletitled, Gas source molecular beam epitaxy of FeSi2/Si(111) heterostructures

Open the PDF for in another window

Quality of AlAs‐like and InSb‐like interfaces in InAs/AlSb superlattices: An optical study

J. Spitzer; H. D. Fuchs; P. Etchegoin; M. Ilg; M. Cardona; B. Brar; H. Kroemer

Appl. Phys. Lett. 62, 2274–2276 (1993) https://doi.org/10.1063/1.109393

Abstract

View articletitled, Quality of AlAs‐like and InSb‐like interfaces in InAs/AlSb superlattices: An optical study

Open the PDF for in another window

Defect generation sensitivity depth profile in buried SiO₂ using Ar plasma exposure

A. Stesmans; K. Vanheusden

Appl. Phys. Lett. 62, 2277–2279 (1993) https://doi.org/10.1063/1.109394

Abstract

View articletitled, Defect generation sensitivity depth profile in buried SiO2 using Ar plasma exposure

Open the PDF for in another window

Fabrication and characterization of YBa₂Cu₃O₇ step‐edge junction arrays

W. Reuter; M. Siegel; K. Herrmann; J. Schubert; W. Zander; A. I. Braginski; P. Müller

Appl. Phys. Lett. 62, 2280–2282 (1993) https://doi.org/10.1063/1.109395

Abstract

View articletitled, Fabrication and characterization of YBa2Cu3O7 step‐edge junction arrays

Open the PDF for in another window

Hole transport in microcrystalline chlorophyll a

H. Kassi; S. Hotchandani; R. M. Leblanc

Appl. Phys. Lett. 62, 2283–2285 (1993) https://doi.org/10.1063/1.109396

Abstract

View articletitled, Hole transport in microcrystalline chlorophyll a

Open the PDF for in another window

Dielectric loss in thin films of an aromatic polyimide

M. O. Aboelfotoh; C. Feger; A. Castellano; R. Kaufman; S. Molis

Appl. Phys. Lett. 62, 2286–2288 (1993) https://doi.org/10.1063/1.109397

Abstract

View articletitled, Dielectric loss in thin films of an aromatic polyimide

Open the PDF for in another window

Erratum: ‘‘Optical saturation of intersubband absorption in GaAs‐Al_xGa_1−xAs quantum wells’’ [Appl. Phys. Lett. 53, 116 (1988)]

F. H. Julien; J.‐M. Lourtioz; N. Herschkorn; D. Delacourt; J. P. Pocholle; M. Papuchon; R. Planel; G. LeRoux

Appl. Phys. Lett. 62, 2289 (1993) https://doi.org/10.1063/1.109643

View articletitled, Erratum: ‘‘Optical saturation of intersubband absorption in GaAs‐AlxGa1−xAs quantum wells’’ [Appl. Phys. Lett. 53, 116 (1988)]

Open the PDF for in another window

Submit your article

Sign up for alerts

RSS

Current Issue RSS Feed

Open Issues RSS Feed

Most Read
Most Cited

Roadmap on photonic metasurfaces

Sebastian A. Schulz, Rupert. F. Oulton, et al.

Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures

Tomoya Okuda, Shunsuke Ota, et al.

Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials

Christina M. Rost, Alessandro R. Mazza, et al.

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only