Skip Nav Destination

Issues

Select Decade

Select Year

Issue

Volume 62, Issue 10

8 March 1993

All Issues

ISSN 0003-6951

EISSN 1077-3118

Bragg gratings fabricated in monomode photosensitive optical fiber by UV exposure through a phase mask

K. O. Hill; B. Malo; F. Bilodeau; D. C. Johnson; J. Albert

Appl. Phys. Lett. 62, 1035–1037 (1993) https://doi.org/10.1063/1.108786

Abstract

View articletitled, Bragg gratings fabricated in monomode photosensitive optical fiber by UV exposure through a phase mask

Open the PDF for in another window

Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement

Y. H. Lo; R. Bhat; D. M. Hwang; C. Chua; C.‐H. Lin

Appl. Phys. Lett. 62, 1038–1040 (1993) https://doi.org/10.1063/1.108787

Abstract

View articletitled, Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement

Open the PDF for in another window

Novel biphotonic holographic storage in a side‐chain liquid crystalline polyester

P. S. Ramanujam; S. Hvilsted; F. Andruzzi

Appl. Phys. Lett. 62, 1041–1043 (1993) https://doi.org/10.1063/1.108788

Abstract

View articletitled, Novel biphotonic holographic storage in a side‐chain liquid crystalline polyester

Open the PDF for in another window

Phase contrast and amplitude pseudoheterodyne interference near field scanning optical microscopy

M. Vaez‐Iravani; R. Toledo‐Crow

Appl. Phys. Lett. 62, 1044–1046 (1993) https://doi.org/10.1063/1.108789

Abstract

View articletitled, Phase contrast and amplitude pseudoheterodyne interference near field scanning optical microscopy

Open the PDF for in another window

Time‐lens producing 1.9 ps optical pulses

A. A. Godil; B. A. Auld; D. M. Bloom

Appl. Phys. Lett. 62, 1047–1049 (1993) https://doi.org/10.1063/1.108790

Abstract

View articletitled, Time‐lens producing 1.9 ps optical pulses

Open the PDF for in another window

Modeling the current to light characteristics of index‐guided vertical‐cavity surface‐emitting lasers

J. W. Scott; S. W. Corzine; D. B. Young; L. A. Coldren

Appl. Phys. Lett. 62, 1050–1052 (1993) https://doi.org/10.1063/1.108791

Abstract

View articletitled, Modeling the current to light characteristics of index‐guided vertical‐cavity surface‐emitting lasers

Open the PDF for in another window

Colliding pulse mode locking of a semiconductor laser in an external ring cavity

C. F. Lin; C. L. Tang

Appl. Phys. Lett. 62, 1053–1055 (1993) https://doi.org/10.1063/1.108792

Abstract

View articletitled, Colliding pulse mode locking of a semiconductor laser in an external ring cavity

Open the PDF for in another window

Excimer laser ablated barium strontium titanate thin films for dynamic random access memory applications

D. Roy; S. B. Krupanidhi

Appl. Phys. Lett. 62, 1056–1058 (1993) https://doi.org/10.1063/1.108793

Abstract

View articletitled, Excimer laser ablated barium strontium titanate thin films for dynamic random access memory applications

Open the PDF for in another window

Tunable guided‐wave optical polarization converters in lithium tantalate

Z. Tang; O. Eknoyan; H. F. Taylor; V. P. Swenson

Appl. Phys. Lett. 62, 1059–1061 (1993) https://doi.org/10.1063/1.108794

Abstract

View articletitled, Tunable guided‐wave optical polarization converters in lithium tantalate

Open the PDF for in another window

High‐power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes

D. Z. Garbuzov; N. Ju. Antonishkis; S. N. Zhigulin; N. D. Il’inskaya; A. V. Kochergin; D. A. Lifshitz; E. U. Rafailov; M. V. Fuksman

Appl. Phys. Lett. 62, 1062–1064 (1993) https://doi.org/10.1063/1.108795

Abstract

View articletitled, High‐power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes

Open the PDF for in another window

Liquid crystal millimeter wave electronic phase shifter

K. C. Lim; J. D. Margerum; A. M. Lackner

Appl. Phys. Lett. 62, 1065–1067 (1993) https://doi.org/10.1063/1.108796

Abstract

View articletitled, Liquid crystal millimeter wave electronic phase shifter

Open the PDF for in another window

Efficient coupling of high‐intensity subpicosecond laser pulses into solids

M. M. Murnane; H. C. Kapteyn; S. P. Gordon; J. Bokor; E. N. Glytsis; R. W. Falcone

Appl. Phys. Lett. 62, 1068–1070 (1993) https://doi.org/10.1063/1.108797

Abstract

View articletitled, Efficient coupling of high‐intensity subpicosecond laser pulses into solids

Open the PDF for in another window

Two‐photon pumped blue lasing in bulk ZnSe and ZnSSe

X. H. Yang; J. M. Hays; W. Shan; J. J. Song; E. Cantwell

Appl. Phys. Lett. 62, 1071–1073 (1993) https://doi.org/10.1063/1.108798

Abstract

View articletitled, Two‐photon pumped blue lasing in bulk ZnSe and ZnSSe

Open the PDF for in another window

Scanning tunneling microscopy studies of vapor deposited films of tetrathiafulvalene with iodine

J. J. Breen; J. S. Tolman; G. W. Flynn

Appl. Phys. Lett. 62, 1074–1076 (1993) https://doi.org/10.1063/1.108799

Abstract

View articletitled, Scanning tunneling microscopy studies of vapor deposited films of tetrathiafulvalene with iodine

Open the PDF for in another window

Real time electron microscopy inspection of high temperature processes in W free standing wires

J. Gómez‐Herrero; J. I. Pascual; J. Méndez; A. M. Baró

Appl. Phys. Lett. 62, 1077–1078 (1993) https://doi.org/10.1063/1.108800

Abstract

View articletitled, Real time electron microscopy inspection of high temperature processes in W free standing wires

Open the PDF for in another window

Simulation of three‐dimensional director structures in twisted nematic liquid crystal displays

A. Lien

Appl. Phys. Lett. 62, 1079–1081 (1993) https://doi.org/10.1063/1.108801

Abstract

View articletitled, Simulation of three‐dimensional director structures in twisted nematic liquid crystal displays

Open the PDF for in another window

Demonstration of a new tool for degradation of amorphous hydrogenated silicon and the importance of the Fermi level shift

J. Kočka; O. Štika; O. Klíma

Appl. Phys. Lett. 62, 1082–1084 (1993) https://doi.org/10.1063/1.109602

Abstract

View articletitled, Demonstration of a new tool for degradation of amorphous hydrogenated silicon and the importance of the Fermi level shift

Open the PDF for in another window

Transmission of phonons through grain boundaries in diamond films

D. T. Morelli; C. Uher; C. J. Robinson

Appl. Phys. Lett. 62, 1085–1087 (1993) https://doi.org/10.1063/1.108802

Abstract

View articletitled, Transmission of phonons through grain boundaries in diamond films

Open the PDF for in another window

Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh vacuum deposited Hf and Cr thin films on (111)Si

W. Y. Hsieh; J. H. Lin; L. J. Chen

Appl. Phys. Lett. 62, 1088–1090 (1993) https://doi.org/10.1063/1.108803

Abstract

View articletitled, Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh vacuum deposited Hf and Cr thin films on (111)Si

Open the PDF for in another window

Electric‐field‐induced phase changes in polyvinylidene fluoride: Effects from corona polarity and moisture

Mauro M. Costa; José A. Giacometti

Appl. Phys. Lett. 62, 1091–1093 (1993) https://doi.org/10.1063/1.108804

Abstract

View articletitled, Electric‐field‐induced phase changes in polyvinylidene fluoride: Effects from corona polarity and moisture

Open the PDF for in another window

Geometrical shape dependent polarization anisotropy in electroluminescence from InGaAs/InP quantum wires

M. Notomi; M. Okamoto; H. Iwamura; T. Tamamura

Appl. Phys. Lett. 62, 1094–1096 (1993) https://doi.org/10.1063/1.108752

Abstract

View articletitled, Geometrical shape dependent polarization anisotropy in electroluminescence from InGaAs/InP quantum wires

Open the PDF for in another window

Large blue shift of light emitting porous silicon by boiling water treatment

X. Y. Hou; G. Shi; W. Wang; F. L. Zhang; P. H. Hao; D. M. Huang; X. Wang

Appl. Phys. Lett. 62, 1097–1098 (1993) https://doi.org/10.1063/1.108753

Abstract

View articletitled, Large blue shift of light emitting porous silicon by boiling water treatment

Open the PDF for in another window

Role of Si‐H and Si‐H₂ in the photoluminescence of porous Si

J. M. Lavine; S. P. Sawan; Y. T. Shieh; A. J. Bellezza

Appl. Phys. Lett. 62, 1099–1101 (1993) https://doi.org/10.1063/1.108754

Abstract

View articletitled, Role of Si‐H and Si‐H2 in the photoluminescence of porous Si

Open the PDF for in another window

Semi‐insulating crystalline silicon formed by oxygen doping during low‐temperature chemical vapor deposition

P. V. Schwartz; C. W. Liu; J. C. Sturm

Appl. Phys. Lett. 62, 1102–1104 (1993) https://doi.org/10.1063/1.108755

Abstract

View articletitled, Semi‐insulating crystalline silicon formed by oxygen doping during low‐temperature chemical vapor deposition

Open the PDF for in another window

Modulation‐doped In_0.48Al_0.52P/In_0.2Ga_0.8As field‐effect transistors

Jenn‐Ming Kuo; Yi‐Jen Chan; Dimitris Pavlidis

Appl. Phys. Lett. 62, 1105–1107 (1993) https://doi.org/10.1063/1.108756

Abstract

View articletitled, Modulation‐doped In0.48Al0.52P/In0.2Ga0.8As field‐effect transistors

Open the PDF for in another window

Transport mechanisms in low‐resistance ohmic contacts to p‐InP formed by rapid thermal annealing

T. Clausen; O. Leistiko

Appl. Phys. Lett. 62, 1108–1109 (1993) https://doi.org/10.1063/1.108757

Abstract

View articletitled, Transport mechanisms in low‐resistance ohmic contacts to p‐InP formed by rapid thermal annealing

Open the PDF for in another window

Microscale elastic‐strain determination by backscatter Kikuchi diffraction in the scanning electron microscope

K. Z. Troost; P. van der Sluis; D. J. Gravesteijn

Appl. Phys. Lett. 62, 1110–1112 (1993) https://doi.org/10.1063/1.108758

Abstract

View articletitled, Microscale elastic‐strain determination by backscatter Kikuchi diffraction in the scanning electron microscope

Open the PDF for in another window

Interpretation of photoluminescence excitation spectroscopy of porous Si layers

Lei Wang; M. T. Wilson; N. M. Haegel

Appl. Phys. Lett. 62, 1113–1115 (1993) https://doi.org/10.1063/1.108759

Abstract

View articletitled, Interpretation of photoluminescence excitation spectroscopy of porous Si layers

Open the PDF for in another window

Relative free energies of Si surfaces

D. M. Follstaedt

Appl. Phys. Lett. 62, 1116–1118 (1993) https://doi.org/10.1063/1.108760

Abstract

View articletitled, Relative free energies of Si surfaces

Open the PDF for in another window

Bound‐to‐bound intersubband transitions in a δ‐doped p‐type Si/Si_xGe_1−x/Si quantum well

S. K. Chun; D. S. Pan; K. L. Wang

Appl. Phys. Lett. 62, 1119–1121 (1993) https://doi.org/10.1063/1.108761

Abstract

View articletitled, Bound‐to‐bound intersubband transitions in a δ‐doped p‐type Si/SixGe1−x/Si quantum well

Open the PDF for in another window

Saturation of multiplication factor in InGaAsP/InAlAs superlattice avalanche photodiodes

Toshiaki Kagawa; Yuichi Kawamura; Hidetoshi Iwamura

Appl. Phys. Lett. 62, 1122–1124 (1993) https://doi.org/10.1063/1.108762

Abstract

View articletitled, Saturation of multiplication factor in InGaAsP/InAlAs superlattice avalanche photodiodes

Open the PDF for in another window

Positive charge and interface state creation at the Si‐SiO₂ interface during low‐fluence and high‐field electron injections

Abdellah Mir; Dominique Vuillaume

Appl. Phys. Lett. 62, 1125–1127 (1993) https://doi.org/10.1063/1.108763

Abstract

View articletitled, Positive charge and interface state creation at the Si‐SiO2 interface during low‐fluence and high‐field electron injections

Open the PDF for in another window

Picosecond carrier lifetime in erbium‐doped‐GaAs

S. Gupta; S. Sethi; P. K. Bhattacharya

Appl. Phys. Lett. 62, 1128–1130 (1993) https://doi.org/10.1063/1.108764

Abstract

View articletitled, Picosecond carrier lifetime in erbium‐doped‐GaAs

Open the PDF for in another window

Ion implantation induced defects in SiO₂: The applicability of the positron probe

M. Fujinami; N. B. Chilton

Appl. Phys. Lett. 62, 1131–1133 (1993) https://doi.org/10.1063/1.108765

Abstract

View articletitled, Ion implantation induced defects in SiO2: The applicability of the positron probe

Open the PDF for in another window

Infrared photoconductor fabricated with HgTe/CdTe superlattice grown by molecular beam epitaxy

Yueming Qiu; Li He; Jie Li; Shixin Yuan; C. R. Becker; G. Landwehr

Appl. Phys. Lett. 62, 1134–1136 (1993) https://doi.org/10.1063/1.108766

Abstract

View articletitled, Infrared photoconductor fabricated with HgTe/CdTe superlattice grown by molecular beam epitaxy

Open the PDF for in another window

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells

T. Bickl; B. Jacobs; J. Straka; A. Forchel

Appl. Phys. Lett. 62, 1137–1139 (1993) https://doi.org/10.1063/1.108767

Abstract

View articletitled, Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells

Open the PDF for in another window

p⁺/n/n⁺ InP solar cells directly on Si substrates

M. K. Lee; D. S. Wuu; R. H. Horng

Appl. Phys. Lett. 62, 1140–1142 (1993) https://doi.org/10.1063/1.108768

Abstract

View articletitled, p+/n/n+ InP solar cells directly on Si substrates

Open the PDF for in another window

Determination of electron recombination parameters in GaAs/AlGaAs quantum wells by impedance spectroscopy

F. Luc; E. Rosencher; B. Vinter

Appl. Phys. Lett. 62, 1143–1145 (1993) https://doi.org/10.1063/1.108769

Abstract

View articletitled, Determination of electron recombination parameters in GaAs/AlGaAs quantum wells by impedance spectroscopy

Open the PDF for in another window

Spatially resolved Raman spectroscopy of a step graded Ge_xSi_1−x strain relief structure

J. C. Tsang; F. H. Dacol; P. M. Mooney; J. O. Chu; B. S. Meyerson

Appl. Phys. Lett. 62, 1146–1148 (1993) https://doi.org/10.1063/1.108770

Abstract

View articletitled, Spatially resolved Raman spectroscopy of a step graded GexSi1−x strain relief structure

Open the PDF for in another window

Study of characteristics of photoluminescence spectra in double‐barrier resonant tunneling structures

T. H. Wang; X. B. Mei; C. Jiang; Y. Huang; J. M. Zhou; G. Z. Yang

Appl. Phys. Lett. 62, 1149–1151 (1993) https://doi.org/10.1063/1.108771

Abstract

View articletitled, Study of characteristics of photoluminescence spectra in double‐barrier resonant tunneling structures

Open the PDF for in another window

Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote‐plasma treatment

Y. Xiao; M. J. Heben; J. M. McCullough; Y. S. Tsuo; J. I. Pankove; S. K. Deb

Appl. Phys. Lett. 62, 1152–1154 (1993) https://doi.org/10.1063/1.108772

Abstract

View articletitled, Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote‐plasma treatment

Open the PDF for in another window

Optical absorption evidence of a quantum size effect in porous silicon

I. Sagnes; A. Halimaoui; G. Vincent; P. A. Badoz

Appl. Phys. Lett. 62, 1155–1157 (1993) https://doi.org/10.1063/1.108773

Abstract

View articletitled, Optical absorption evidence of a quantum size effect in porous silicon

Open the PDF for in another window

Identification of nonbolometric photoresponse in YBa₂Cu₃O_7−δ thin films based on magnetic field dependence

F. A. Hegmann; J. S. Preston

Appl. Phys. Lett. 62, 1158–1160 (1993) https://doi.org/10.1063/1.109613

Abstract

View articletitled, Identification of nonbolometric photoresponse in YBa2Cu3O7−δ thin films based on magnetic field dependence

Open the PDF for in another window

Peltier refrigerator using a high T_c superconductor

M. G. Fee

Appl. Phys. Lett. 62, 1161–1163 (1993) https://doi.org/10.1063/1.108774

Abstract

View articletitled, Peltier refrigerator using a high Tc superconductor

Open the PDF for in another window

Secondary ion mass spectrometry study for Josephson junction with Nb/AlO_x‐Al/Nb structure

Shin’ichi Morohashi; Yuji Kataoka; Takeshi Imamura; Shinya Hasuo

Appl. Phys. Lett. 62, 1164–1166 (1993) https://doi.org/10.1063/1.108775

Abstract

View articletitled, Secondary ion mass spectrometry study for Josephson junction with Nb/AlOx‐Al/Nb structure

Open the PDF for in another window

Submit your article

Sign up for alerts

RSS

Current Issue RSS Feed

Open Issues RSS Feed

Most Read
Most Cited

Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

Joachim Würfl, Tomás Palacios, et al.

Roadmap on photonic metasurfaces

Sebastian A. Schulz, Rupert. F. Oulton, et al.

Feedback cooling of an insulating high-Q diamagnetically levitated plate

S. Tian, K. Jadeja, et al.

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only