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Free‐running XeF(C‐A) lasing at 2.2 atm in a commercial discharge excimer laser
Appl. Phys. Lett. 62, 4–6 (1993)
https://doi.org/10.1063/1.108815
Phase locking between light pulses and a resonant tunneling diode oscillator
Appl. Phys. Lett. 62, 13–15 (1993)
https://doi.org/10.1063/1.108829
Nonuniform photobleaching of dyed polymers for optical waveguides
Appl. Phys. Lett. 62, 16–18 (1993)
https://doi.org/10.1063/1.108830
Resonantly enhanced, frequency doubling of an 820 nm GaAlAs diode laser in a potassium lithium niobate crystal
Appl. Phys. Lett. 62, 19–21 (1993)
https://doi.org/10.1063/1.108831
Measurement of CO2 laser small angle Thomson scattering on a magnetically confined plasma
Appl. Phys. Lett. 62, 28–30 (1993)
https://doi.org/10.1063/1.108808
Ion implanted, outdiffusion produced diamond thin films
Appl. Phys. Lett. 62, 34–36 (1993)
https://doi.org/10.1063/1.108810
Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)
Appl. Phys. Lett. 62, 46–48 (1993)
https://doi.org/10.1063/1.108814
Fabrication of GaAs arrowhead‐shaped quantum wires by metalorganic chemical vapor deposition selective growth
Appl. Phys. Lett. 62, 49–51 (1993)
https://doi.org/10.1063/1.109614
Carrier transport limited bandwidth of 1.55 μm quantum‐well lasers
Appl. Phys. Lett. 62, 52–54 (1993)
https://doi.org/10.1063/1.108816
Growth of analog AlxGa1−xAs/GaAs parabolic quantum wells by molecular beam epitaxy
Appl. Phys. Lett. 62, 61–62 (1993)
https://doi.org/10.1063/1.108819
Decay time of the blue luminescence in ZnSe at room temperature
Appl. Phys. Lett. 62, 63–65 (1993)
https://doi.org/10.1063/1.108820
Generation of dc substrate current in metal‐oxide‐semiconductor structures under an oscillating gate voltage
Appl. Phys. Lett. 62, 69–71 (1993)
https://doi.org/10.1063/1.108822
Optical properties of GaP/AlP short‐period superlattices grown by gas source molecular beam epitaxy
Appl. Phys. Lett. 62, 81–83 (1993)
https://doi.org/10.1063/1.108779
Excitation and quenching of Yb intra‐4f‐shell luminescence in InP0.93As0.07
Appl. Phys. Lett. 62, 84–86 (1993)
https://doi.org/10.1063/1.108780
Surface recombination in dry etched AlGaAs/GaAs double heterostructure p‐i‐n mesa diodes
Appl. Phys. Lett. 62, 87–89 (1993)
https://doi.org/10.1063/1.108781
Single transistor static memory cell: Circuit application of a new quantum transistor
Appl. Phys. Lett. 62, 96–98 (1993)
https://doi.org/10.1063/1.108784
Gas‐phase oxidation of copper during laser ablation of YBa2Cu3O7−δ in different oxidizing ambients
Appl. Phys. Lett. 62, 102–104 (1993)
https://doi.org/10.1063/1.108824
In situ growth of superconducting YBa2Cu3O7−x thin films by a hot‐wall sputtering process
Appl. Phys. Lett. 62, 105–107 (1993)
https://doi.org/10.1063/1.108825
Directionally alternating domain wall propagation in bistable amorphous wires
Appl. Phys. Lett. 62, 108–109 (1993)
https://doi.org/10.1063/1.108826
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
J. Wang, D. G. Rickel, et al.