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Improving the performance of semiconductor ring lasers by controlled reflection feedback
Appl. Phys. Lett. 61, 1013–1015 (1992)
https://doi.org/10.1063/1.107700
Theoretical analysis of dynamic response of asymmetric dual quantum well lasers
Appl. Phys. Lett. 61, 1016–1018 (1992)
https://doi.org/10.1063/1.107701
Observation of the focusing of x‐ray transition radiation using cylindrical optics
M. A. Piestrup; D. G. Boyers; C. I. Pincus; Qiang Li; A. H. Ho; X. K. Maruyama; D. D. Snyder; D. M. Skopik; R. M. Silzer; M. J. Moran; G. B. Rothbart
Appl. Phys. Lett. 61, 1019–1021 (1992)
https://doi.org/10.1063/1.107702
New principle for optical filters
Appl. Phys. Lett. 61, 1022–1024 (1992)
https://doi.org/10.1063/1.107703
Sidelobe suppression in an acousto‐optic filter with a raised‐cosine interaction strength
Appl. Phys. Lett. 61, 1025–1027 (1992)
https://doi.org/10.1063/1.107704
Nitrogen and oxygen incorporation during rapid thermal processing of Si in N2O
Appl. Phys. Lett. 61, 1031–1033 (1992)
https://doi.org/10.1063/1.107706
Nitrogen‐induced amorphization of Ti‐Zr powders during mechanical alloying
Appl. Phys. Lett. 61, 1037–1039 (1992)
https://doi.org/10.1063/1.107708
Ballistic electron emission microscopy of laterally patterned microstructures
Appl. Phys. Lett. 61, 1040–1042 (1992)
https://doi.org/10.1063/1.107709
Growth of face‐centered‐cubic single crystals of C60 from boiling benzene
Appl. Phys. Lett. 61, 1043–1044 (1992)
https://doi.org/10.1063/1.107710
Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer
K. H. Huang; J. G. Yu; C. P. Kuo; R. M. Fletcher; T. D. Osentowski; L. J. Stinson; M. G. Craford; A. S. H. Liao
Appl. Phys. Lett. 61, 1045–1047 (1992)
https://doi.org/10.1063/1.107711
pnp resonant tunneling light emitting transistor
Appl. Phys. Lett. 61, 1051–1053 (1992)
https://doi.org/10.1063/1.107713
Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas‐source migration enhanced epitaxy
Appl. Phys. Lett. 61, 1054–1056 (1992)
https://doi.org/10.1063/1.107714
Schottky barrier inhomogeneity caused by grain boundaries in epitaxial Al film formed on Si(111)
Appl. Phys. Lett. 61, 1057–1059 (1992)
https://doi.org/10.1063/1.107715
In situ infrared and mass spectroscopic study of the reaction of WF6 with hydrogenated amorphous silicon
Appl. Phys. Lett. 61, 1060–1062 (1992)
https://doi.org/10.1063/1.107716
Laser‐driven boron diffusion into a Si epitaxial layer from a p+ boron‐doped Si substrate
Appl. Phys. Lett. 61, 1066–1068 (1992)
https://doi.org/10.1063/1.107718
Enhanced carrier densities and device performance in piezoelectric pseudomorphic high‐electron mobility transistor structures
Appl. Phys. Lett. 61, 1072–1074 (1992)
https://doi.org/10.1063/1.107694
Dependence of lifetime on surface concentration of copper and iron in silicon wafers
Appl. Phys. Lett. 61, 1078–1080 (1992)
https://doi.org/10.1063/1.107696
Intersubband transitions in quantum well heterostructures with delta‐doped barriers
Appl. Phys. Lett. 61, 1081–1083 (1992)
https://doi.org/10.1063/1.107674
Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency
Michael E. Hoenk; Paula J. Grunthaner; Frank J. Grunthaner; R. W. Terhune; Masoud Fattahi; Hsin‐Fu Tseng
Appl. Phys. Lett. 61, 1084–1086 (1992)
https://doi.org/10.1063/1.107675
Cathodoluminescence imaging and spectroscopy of dislocations in Si and Si1−xGex alloys
Appl. Phys. Lett. 61, 1087–1089 (1992)
https://doi.org/10.1063/1.107676
Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP
Appl. Phys. Lett. 61, 1092–1094 (1992)
https://doi.org/10.1063/1.107678
Low residual impurities assessment by photoluminescence in multistep wafer‐annealed semi‐insulating Czochralski‐grown GaAs
Appl. Phys. Lett. 61, 1095–1097 (1992)
https://doi.org/10.1063/1.107679
Spectroscopic ellipsometric measurements of the dielectric function of germanium dioxide films on crystal germanium
Appl. Phys. Lett. 61, 1098–1100 (1992)
https://doi.org/10.1063/1.107680
Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition
Appl. Phys. Lett. 61, 1101–1103 (1992)
https://doi.org/10.1063/1.107681
Scanning tunneling microscopy of GaAs multiple pn junctions
Appl. Phys. Lett. 61, 1104–1106 (1992)
https://doi.org/10.1063/1.107682
Observation of interface traps in the silicon conduction band at the (100)Si/SiO2 interface at 4.2 K
Appl. Phys. Lett. 61, 1107–1109 (1992)
https://doi.org/10.1063/1.107683
Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si1−xGex
Appl. Phys. Lett. 61, 1110–1112 (1992)
https://doi.org/10.1063/1.107684
Continuous coherent microwave oscillation in InSb p‐n junctions
Appl. Phys. Lett. 61, 1113–1115 (1992)
https://doi.org/10.1063/1.107685
Composition dependent transport properties of strain relaxed InxGa1−xAs(x<0.45) epilayers
Appl. Phys. Lett. 61, 1116–1118 (1992)
https://doi.org/10.1063/1.107686
Silver on diamond Schottky diodes formed on boron doped hot‐filament chemical vapor deposited polycrystalline diamond films
G. Zhao; T. Stacy; E. J. Charlson; E. M. Charlson; C. H. Chao; M. Hajsaid; J. Meese; G. Popovici; M. Prelas
Appl. Phys. Lett. 61, 1119–1121 (1992)
https://doi.org/10.1063/1.107687
Role of hydrogen in the growth of Y1Ba2Cu3O7 on MgO substrates by off‐axis magnetron sputtering
Appl. Phys. Lett. 61, 1125–1127 (1992)
https://doi.org/10.1063/1.107689
Characteristics of high performance YBa2Cu3O7 step‐edge junctions
Appl. Phys. Lett. 61, 1128–1130 (1992)
https://doi.org/10.1063/1.107690
Fabrication of thin film Nb‐(fine Nb wires)‐NbN weak links for superconducting quantum interference device applications
Appl. Phys. Lett. 61, 1131–1133 (1992)
https://doi.org/10.1063/1.107691
a‐axis oriented growth of YBa2Cu3O7−y films on LaSrGaO4(100) substrates
Appl. Phys. Lett. 61, 1134–1136 (1992)
https://doi.org/10.1063/1.107692
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.