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Visible to UV up‐conversion in Er3+ doped cadmium chloride and zinc chloride glasses
Appl. Phys. Lett. 61, 2635–2637 (1992)
https://doi.org/10.1063/1.108118
High power monolithically integrated diode laser, preamplifier, and coherent beam expander
Appl. Phys. Lett. 61, 2638–2640 (1992)
https://doi.org/10.1063/1.108119
Novel electro‐optical phase modulator based on GaInAs/InP modulation‐doped quantum‐well structures
Appl. Phys. Lett. 61, 2641–2643 (1992)
https://doi.org/10.1063/1.108120
Long‐pulse electron‐beam generation from the back‐lighted thyratron
Appl. Phys. Lett. 61, 2647–2649 (1992)
https://doi.org/10.1063/1.108096
High energy carbon ions implantation: An attempt to grow diamond inside copper
Appl. Phys. Lett. 61, 2650–2652 (1992)
https://doi.org/10.1063/1.108097
Paramagnetic centers of amorphous carbon thin films: Influence of hydrogen content and O2 permeation
Appl. Phys. Lett. 61, 2653–2655 (1992)
https://doi.org/10.1063/1.108098
Direct evidence of Er atoms occupying an interstitial site in metalorganic chemical vapor deposition‐grown GaAs:Er
Appl. Phys. Lett. 61, 2665–2667 (1992)
https://doi.org/10.1063/1.108102
New technique to dope GaAs crystals with the 111In→111Cd probe for perturbed‐angular‐correlation spectroscopy
Appl. Phys. Lett. 61, 2668–2670 (1992)
https://doi.org/10.1063/1.108103
Electrical properties of p‐type ZnSe:N thin films
Appl. Phys. Lett. 61, 2671–2673 (1992)
https://doi.org/10.1063/1.108104
Low‐temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low‐pressure chemical vapor deposition
Appl. Phys. Lett. 61, 2674–2676 (1992)
https://doi.org/10.1063/1.108105
Anomalous intense ultraviolet emission bands in the radio‐frequency glow discharges of GeH4‐fluorocarbon‐H2 mixtures
Appl. Phys. Lett. 61, 2677–2679 (1992)
https://doi.org/10.1063/1.108106
Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layers
Appl. Phys. Lett. 61, 2680–2682 (1992)
https://doi.org/10.1063/1.108107
Effect of photoexcitation on the surface band bending in δ‐doped GaAs:Si/Al0.33Ga0.67As double heterostructures
Appl. Phys. Lett. 61, 2685–2687 (1992)
https://doi.org/10.1063/1.108109
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
Appl. Phys. Lett. 61, 2688–2690 (1992)
https://doi.org/10.1063/1.108110
Growth orientation dependence of normal incidence absorption in ellipsoidal‐valley quantum wells
Appl. Phys. Lett. 61, 2694–2696 (1992)
https://doi.org/10.1063/1.108112
A uniformity degradation mechanism in rapid thermal chemical vapor deposition
Appl. Phys. Lett. 61, 2697–2699 (1992)
https://doi.org/10.1063/1.108113
Nondestructive detection of titanium disilicide phase transformation by picosecond ultrasonics
Appl. Phys. Lett. 61, 2700–2702 (1992)
https://doi.org/10.1063/1.108114
Free‐standing microstructures of YBa2Cu3O7−δ: A high‐temperature superconducting air bridge
Appl. Phys. Lett. 61, 2706–2708 (1992)
https://doi.org/10.1063/1.108092
YBa2Cu3O7−y microbridges on Y2O3/yttria‐stabilized zirconia/SiO2/Si(100)
Appl. Phys. Lett. 61, 2709–2711 (1992)
https://doi.org/10.1063/1.108483
Dispersion in Nb microstrip transmission lines at submillimeter wave frequencies
Appl. Phys. Lett. 61, 2712–2714 (1992)
https://doi.org/10.1063/1.108069
Improved laser‐ablated thin films of NdCeCuO by use of N2O
Appl. Phys. Lett. 61, 2715–2717 (1992)
https://doi.org/10.1063/1.108070
Texturing of DyBa2Cu3O7 superconducting grains synthesized in situ in a magnetic field
Appl. Phys. Lett. 61, 2718–2720 (1992)
https://doi.org/10.1063/1.108071
Formation and characteristics of hard magnetic materials: Pr(Mo,Fe)12Nx
Appl. Phys. Lett. 61, 2723–2725 (1992)
https://doi.org/10.1063/1.108073
Magnetic and magneto‐optical properties of cobalt‐platinum alloys with perpendicular magnetic anisotropy
Appl. Phys. Lett. 61, 2726–2728 (1992)
https://doi.org/10.1063/1.108074
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.