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Frequency modulated mode locking of a diode laser pumped Nd:LiYF4 laser utilizing a KTiOPO4 phase modulator
Appl. Phys. Lett. 61, 2257–2259 (1992)
https://doi.org/10.1063/1.108257
Femtosecond multiphoton generation of the self‐trapped exciton in α‐SiO2
W. Joosen; S. Guizard; P. Martin; G. Petite; P. Agostini; A. Dos Santos; G. Grillon; D. Hulin; A. Migus; A. Antonetti
Appl. Phys. Lett. 61, 2260–2262 (1992)
https://doi.org/10.1063/1.108258
Effect of proton exchange on the nonlinear optical properties of LiNbO3 and LiTaO3
Appl. Phys. Lett. 61, 2263–2265 (1992)
https://doi.org/10.1063/1.108259
Long pulse KrCl excimer laser at 222 nm
Appl. Phys. Lett. 61, 2269–2271 (1992)
https://doi.org/10.1063/1.108261
DCM‐polyimide system for triple‐stack poled polymer electro‐optic devices
Appl. Phys. Lett. 61, 2272–2274 (1992)
https://doi.org/10.1063/1.108262
Fluorinated diphenyl‐diacetylene and tolane liquid crystals with low threshold voltage
Appl. Phys. Lett. 61, 2275–2277 (1992)
https://doi.org/10.1063/1.108263
Graded index linear and curved polymer channel waveguide arrays for massively parallel optical interconnects
Appl. Phys. Lett. 61, 2278–2280 (1992)
https://doi.org/10.1063/1.108264
Subpicosecond gain dynamics in InGaAsP optical amplifiers: Experiment and theory
Appl. Phys. Lett. 61, 2281–2283 (1992)
https://doi.org/10.1063/1.108265
Nonlinear optical studies of polar polymeric Langmuir–Schaefer films
Appl. Phys. Lett. 61, 2284–2286 (1992)
https://doi.org/10.1063/1.108266
Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant‐cavity light‐emitting diode
Appl. Phys. Lett. 61, 2287–2289 (1992)
https://doi.org/10.1063/1.108489
All‐optical picosecond switch using organic single‐mode fiber waveguide
Appl. Phys. Lett. 61, 2290–2292 (1992)
https://doi.org/10.1063/1.108267
Nanometer‐scale lithography using the atomic force microscope
Appl. Phys. Lett. 61, 2293–2295 (1992)
https://doi.org/10.1063/1.108268
In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation
Appl. Phys. Lett. 61, 2296–2298 (1992)
https://doi.org/10.1063/1.108269
Annealing of recombination centers in the deposition and light induced high defect amorphous silicon
Appl. Phys. Lett. 61, 2305–2307 (1992)
https://doi.org/10.1063/1.108249
Buffer‐induced modulation of carrier density and mobility in a selectively doped heterostructure
Appl. Phys. Lett. 61, 2308–2310 (1992)
https://doi.org/10.1063/1.108226
30 nm CoSi2 surface layers for contact metallization in complementary metal‐oxide‐semiconductor processes
Appl. Phys. Lett. 61, 2311–2313 (1992)
https://doi.org/10.1063/1.108227
High valence‐band offset of GaSbAs‐InAlAs quantum wells grown by molecular beam epitaxy
Appl. Phys. Lett. 61, 2317–2319 (1992)
https://doi.org/10.1063/1.108229
Free electron laser induced two‐photon absorption in Hg1−xCdxTe
J. Burghoorn; V. F. Anderegg; T. O. Klaassen; W. Th. Wenckebach; R. J. Bakker; A. F. G. van der Meer; D. Oepts; P. W. van Amersfoort
Appl. Phys. Lett. 61, 2320–2322 (1992)
https://doi.org/10.1063/1.108230
Novel hydrogen‐gold‐related deep acceptor in n‐type silicon
Appl. Phys. Lett. 61, 2323–2325 (1992)
https://doi.org/10.1063/1.108231
Oxygen based electron cyclotron resonance etching of semiconducting homoepitaxial diamond films
Appl. Phys. Lett. 61, 2326–2328 (1992)
https://doi.org/10.1063/1.108232
Model for conductance in dry‐etch damaged n‐GaAs structures
Appl. Phys. Lett. 61, 2335–2337 (1992)
https://doi.org/10.1063/1.108235
Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates
Appl. Phys. Lett. 61, 2338–2340 (1992)
https://doi.org/10.1063/1.108236
Auger recombination in modulated photoreflectance characterization of silicon wafers
Appl. Phys. Lett. 61, 2341–2343 (1992)
https://doi.org/10.1063/1.108237
Temperature dependence of the radiative lifetime in porous silicon
Appl. Phys. Lett. 61, 2344–2346 (1992)
https://doi.org/10.1063/1.108238
Microscopic study of the surfactant‐assisted Si, Ge epitaxial growth
Appl. Phys. Lett. 61, 2347–2349 (1992)
https://doi.org/10.1063/1.108239
New class of Si‐based superlattices: Alternating layers of crystalline Si and porous amorphous Si1−xGex alloys
Appl. Phys. Lett. 61, 2350–2352 (1992)
https://doi.org/10.1063/1.108240
Voltage‐current characteristics of a high Tc superconducting field effect device
Appl. Phys. Lett. 61, 2353–2355 (1992)
https://doi.org/10.1063/1.108241
Deposition and reduction of Nd1.85Ce0.15CuO4−y superconducting thin films
S. N. Mao; X. X. Xi; S. Bhattacharya; Qi Li; T. Venkatesan; J. L. Peng; R. L. Greene; Jian Mao; Dong Ho Wu; S. M. Anlage
Appl. Phys. Lett. 61, 2356–2358 (1992)
https://doi.org/10.1063/1.108242
Mg2TiO4 as a novel substrate for high‐temperature superconducting thin films
Appl. Phys. Lett. 61, 2359–2361 (1992)
https://doi.org/10.1063/1.108243
Magnetic properties and giant magnetoresistance of granular permalloy in silver
Appl. Phys. Lett. 61, 2362–2364 (1992)
https://doi.org/10.1063/1.108244
Ferromagnetic δ‐Mn1−xGax thin films with perpendicular anisotropy
Appl. Phys. Lett. 61, 2365–2367 (1992)
https://doi.org/10.1063/1.108245
Observation of scattering of particles produced by laser ablation on a substrate by laser induced fluorescence
Appl. Phys. Lett. 61, 2368–2370 (1992)
https://doi.org/10.1063/1.108246
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.