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Volume 60, Issue 24

15 June 1992

All Issues

ISSN 0003-6951

EISSN 1077-3118

Electron beam pumping of the 546.1 nm mercury laser

R. L. Rhoades; J. T. Verdeyen

Appl. Phys. Lett. 60, 2951–2953 (1992) https://doi.org/10.1063/1.106825

Abstract

View articletitled, Electron beam pumping of the 546.1 nm mercury laser

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Second quantized state oscillation and wavelength switching in strained‐layer multiquantum‐well lasers

T. R. Chen; Yuhua Zhuang; Y. J. Xu; B. Zhao; A. Yariv; J. Ungar; Se Oh

Appl. Phys. Lett. 60, 2954–2956 (1992) https://doi.org/10.1063/1.106800

Abstract

View articletitled, Second quantized state oscillation and wavelength switching in strained‐layer multiquantum‐well lasers

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Near‐field differential scanning optical microscope with atomic force regulation

R. Toledo‐Crow; P. C. Yang; Y. Chen; M. Vaez‐Iravani

Appl. Phys. Lett. 60, 2957–2959 (1992) https://doi.org/10.1063/1.106801

Abstract

View articletitled, Near‐field differential scanning optical microscope with atomic force regulation

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K₂ yellow‐band and Rb₂ orange‐band excimer emissions by electron‐beam excitation

Da Xing; Ken‐ichi Ueda; Hiroshi Takuma

Appl. Phys. Lett. 60, 2960–2962 (1992) https://doi.org/10.1063/1.107467

Abstract

View articletitled, K2 yellow‐band and Rb2 orange‐band excimer emissions by electron‐beam excitation

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Soft x‐ray (97‐eV) phase retardation using transmission multilayers

J. B. Kortright; H. Kimura; V. Nikitin; K. Mayama; M. Yamamoto; M. Yanagihara

Appl. Phys. Lett. 60, 2963–2965 (1992) https://doi.org/10.1063/1.106802

Abstract

View articletitled, Soft x‐ray (97‐eV) phase retardation using transmission multilayers

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Monolithic integration of normally‐on and normally‐off asymmetric Fabry–Perot modulators by selective antireflection coating

K. W. Goossen; J. E. Cunningham; W. Y. Jan

Appl. Phys. Lett. 60, 2966–2968 (1992) https://doi.org/10.1063/1.106803

Abstract

View articletitled, Monolithic integration of normally‐on and normally‐off asymmetric Fabry–Perot modulators by selective antireflection coating

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Highly stable self‐mode locking and the longitudinal mode structure in CuBr laser

Jihong Geng; Guiyan Zhang; Xiudong Song; Fucheng Lin

Appl. Phys. Lett. 60, 2969–2970 (1992) https://doi.org/10.1063/1.106779

Abstract

View articletitled, Highly stable self‐mode locking and the longitudinal mode structure in CuBr laser

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Tunable coupled‐quantum‐well laser controlled by an electric field

L. Y. Liu; E. E. Mendez; H. Meier

Appl. Phys. Lett. 60, 2971–2973 (1992) https://doi.org/10.1063/1.106780

Abstract

View articletitled, Tunable coupled‐quantum‐well laser controlled by an electric field

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Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers

Hiroshi Wada; Dubravko I. Babić; Masayuki Ishikawa; John E. Bowers

Appl. Phys. Lett. 60, 2974–2976 (1992) https://doi.org/10.1063/1.106781

Abstract

View articletitled, Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers

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Narrow‐linewidth operation of broad‐stripe single quantum well laser diodes in a grazing incidence external cavity

P. Gavrilovic; A. V. Chelnokov; M. S. O’Neill; D. M. Beyea

Appl. Phys. Lett. 60, 2977–2979 (1992) https://doi.org/10.1063/1.106782

Abstract

View articletitled, Narrow‐linewidth operation of broad‐stripe single quantum well laser diodes in a grazing incidence external cavity

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On the debris phenomenon with laser‐sputtered polymers

Roger Kelly; Antonio Miotello; Bodil Braren; Charles E. Otis

Appl. Phys. Lett. 60, 2980–2982 (1992) https://doi.org/10.1063/1.107444

Abstract

View articletitled, On the debris phenomenon with laser‐sputtered polymers

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Formation of TiN‐encapsulated copper structures in a NH₃ ambient

Jian Li; J. W. Mayer; Y. Shacham‐Diamand; E. G. Colgan

Appl. Phys. Lett. 60, 2983–2985 (1992) https://doi.org/10.1063/1.106783

Abstract

View articletitled, Formation of TiN‐encapsulated copper structures in a NH3 ambient

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X‐ray diffraction determination of interfacial roughness correlation in Si_xGe_1−x/Si and GaAs/Al_xGa_1−xAs superlattices

Y. H. Phang; D. E. Savage; T. F. Kuech; M. G. Lagally; J. S. Park; K. L. Wang

Appl. Phys. Lett. 60, 2986–2988 (1992) https://doi.org/10.1063/1.106784

Abstract

View articletitled, X‐ray diffraction determination of interfacial roughness correlation in SixGe1−x/Si and GaAs/AlxGa1−xAs superlattices

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Radiation‐induced E′ centers in H₂‐annealed oxide films

M. E. Zvanut; R. E. Stahlbush; W. E. Carlos

Appl. Phys. Lett. 60, 2989–2991 (1992) https://doi.org/10.1063/1.106785

Abstract

View articletitled, Radiation‐induced E′ centers in H2‐annealed oxide films

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Mechanical properties of 3C silicon carbide

Lijun Tong; Mehran Mehregany; Lawrence G. Matus

Appl. Phys. Lett. 60, 2992–2994 (1992) https://doi.org/10.1063/1.106786

Abstract

View articletitled, Mechanical properties of 3C silicon carbide

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Epitaxial growth of Be on α‐Al₂O₃

Judith A. Ruffner; J. M. Slaughter; Charles M. Falco

Appl. Phys. Lett. 60, 2995–2997 (1992) https://doi.org/10.1063/1.106787

Abstract

View articletitled, Epitaxial growth of Be on α‐Al2O3

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Quantum wires prepared by liquid‐phase‐epitaxial overgrowth of dry‐etched AlGaAs‐GaAs heterostructures

W. Hornischer; P. Grambow; T. Demel; E. Bauser; D. Heitmann; K. von Klitzing; K. Ploog

Appl. Phys. Lett. 60, 2998–3000 (1992) https://doi.org/10.1063/1.106788

Abstract

View articletitled, Quantum wires prepared by liquid‐phase‐epitaxial overgrowth of dry‐etched AlGaAs‐GaAs heterostructures

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Passivation of ion‐beam damage in metal‐oxide‐silicon structures by room‐temperature hydrogenation

S. Kar; K. Srikanth; S. Ashok

Appl. Phys. Lett. 60, 3001–3003 (1992) https://doi.org/10.1063/1.106789

Abstract

View articletitled, Passivation of ion‐beam damage in metal‐oxide‐silicon structures by room‐temperature hydrogenation

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Effect of hydrogen treatment on electrically active centers in AlGaAsSb

A. Y. Polyakov; M. Stam; A. G. Milnes; A. E. Bochkarev; S. J. Pearton; R. G. Wilson; P. Rai‐Choudhury; R. J. Hillard

Appl. Phys. Lett. 60, 3004–3006 (1992) https://doi.org/10.1063/1.106790

Abstract

View articletitled, Effect of hydrogen treatment on electrically active centers in AlGaAsSb

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Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy

R. Enrique Viturro; Michael R. Melloch; Jerry M. Woodall

Appl. Phys. Lett. 60, 3007–3009 (1992) https://doi.org/10.1063/1.106791

Abstract

View articletitled, Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy

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Single‐step implant isolation of p⁺‐InP with 5‐MeV O ions

M. C. Ridgway; C. Jagadish; R. G. Elliman; N. Hauser

Appl. Phys. Lett. 60, 3010–3012 (1992) https://doi.org/10.1063/1.106792

Abstract

View articletitled, Single‐step implant isolation of p+‐InP with 5‐MeV O ions

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Evidence for quantum confinement in porous silicon from soft x‐ray absorption

T. van Buuren; Y. Gao; T. Tiedje; J. R. Dahn; B. M. Way

Appl. Phys. Lett. 60, 3013–3015 (1992) https://doi.org/10.1063/1.106793

Abstract

View articletitled, Evidence for quantum confinement in porous silicon from soft x‐ray absorption

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The Si/Pd(Si,Ge) ohmic contact on n‐GaAs

L. C. Wang; Y. Z. Li; M. Kappes; S. S. Lau; D. M. Hwang; S. A. Schwarz; T. Sands

Appl. Phys. Lett. 60, 3016–3018 (1992) https://doi.org/10.1063/1.106794

Abstract

View articletitled, The Si/Pd(Si,Ge) ohmic contact on n‐GaAs

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Picosecond duration, large amplitude impulse generation using electrical soliton effects

Michael Case; Eric Carman; Ruai Yu; M. J. W. Rodwell; Masayuki Kamegawa

Appl. Phys. Lett. 60, 3019–3021 (1992) https://doi.org/10.1063/1.106795

Abstract

View articletitled, Picosecond duration, large amplitude impulse generation using electrical soliton effects

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GaAs/AlGaAs superlattice miniband detector with 14.5 μm peak response

K. M. S. V. Bandara; J.‐W. Choe; M. H. Francombe; A. G. U. Perera; Y. F. Lin

Appl. Phys. Lett. 60, 3022–3024 (1992) https://doi.org/10.1063/1.106796

Abstract

View articletitled, GaAs/AlGaAs superlattice miniband detector with 14.5 μm peak response

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Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen

K. Ohtsuka; M. Imaizumi; H. Sugimoto; T. Isu; Y. Endoh

Appl. Phys. Lett. 60, 3025–3026 (1992) https://doi.org/10.1063/1.106797

Abstract

View articletitled, Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen

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Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐Al_xGa₁₋_xN heterojunctions

M. Asif Khan; J. N. Kuznia; J. M. Van Hove; N. Pan; J. Carter

Appl. Phys. Lett. 60, 3027–3029 (1992) https://doi.org/10.1063/1.106798

Abstract

View articletitled, Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

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Impact ionization in Ga_1−xAl_xSb

L. Gouskov; B. Orsal; M. Pérotin; M. Karim; A. Sabir; P. Coudray; S. Kibeya; H. Luquet

Appl. Phys. Lett. 60, 3030–3032 (1992) https://doi.org/10.1063/1.106799

Abstract

View articletitled, Impact ionization in Ga1−xAlxSb

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Growth and strain compensation effects in the ternary Si_1−x−yGe_xC_y alloy system

K. Eberl; S. S. Iyer; S. Zollner; J. C. Tsang; F. K. LeGoues

Appl. Phys. Lett. 60, 3033–3035 (1992) https://doi.org/10.1063/1.106774

Abstract

View articletitled, Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy system

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Large blueshifting of InGaAs/InP quantum‐well band gaps by ion implantation

J. E. Zucker; B. Tell; K. L. Jones; M. D. Divino; K. F. Brown‐Goebeler; C. H. Joyner; B. I. Miller; M. G. Young

Appl. Phys. Lett. 60, 3036–3038 (1992) https://doi.org/10.1063/1.106775

Abstract

View articletitled, Large blueshifting of InGaAs/InP quantum‐well band gaps by ion implantation

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High‐quality Nb/HfO_x‐Hf/Nb Josephson junction

Shin’ichi Morohashi; Takeshi Imamura; Shinya Hasuo

Appl. Phys. Lett. 60, 3039–3041 (1992) https://doi.org/10.1063/1.106776

Abstract

View articletitled, High‐quality Nb/HfOx‐Hf/Nb Josephson junction

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Effect of thermal history on the transport properties and the location of Fe in YBa₂Cu₃O₇ thin films

Frank Bridges; J. B. Boyce; R. I. Johnson

Appl. Phys. Lett. 60, 3042–3044 (1992) https://doi.org/10.1063/1.106777

Abstract

View articletitled, Effect of thermal history on the transport properties and the location of Fe in YBa2Cu3O7 thin films

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Layer‐by‐layer deposition of La_1.85Sr_0.15CuO_x films by pulsed laser ablation

M. Y. Chern; A. Gupta; B. W. Hussey

Appl. Phys. Lett. 60, 3045–3047 (1992) https://doi.org/10.1063/1.106778

Abstract

View articletitled, Layer‐by‐layer deposition of La1.85Sr0.15CuOx films by pulsed laser ablation

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Low 1/f noise single‐layer YBa₂Cu₃O_x dc SQUID at 77 K

G. Friedl; M. Vildić; B. Roas; D. Uhl; F. Bömmel; M. Römheld; B. Hillenbrand; B. Stritzker; G. Daalmans

Appl. Phys. Lett. 60, 3048–3050 (1992) https://doi.org/10.1063/1.106752

Abstract

View articletitled, Low 1/f noise single‐layer YBa2Cu3Ox dc SQUID at 77 K

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Plasma nitridation of Nb wiring sidewalls to improve annealing stability

Tetsuyoshi Shiota; Takeshi Imamura; Shinya Hasuo

Appl. Phys. Lett. 60, 3051–3053 (1992) https://doi.org/10.1063/1.106753

Abstract

View articletitled, Plasma nitridation of Nb wiring sidewalls to improve annealing stability

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Preparation of YBa₂Cu₃O_7−δ thin films with thickness gradients and investigations of growth stages by scanning tunneling microscopy

H. Haefke; H. P. Lang; G. Leemann; H.‐J. Güntherodt

Appl. Phys. Lett. 60, 3054–3056 (1992) https://doi.org/10.1063/1.106754

Abstract

View articletitled, Preparation of YBa2Cu3O7−δ thin films with thickness gradients and investigations of growth stages by scanning tunneling microscopy

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New 100 K TlSr₂(Ca,Cr)Cu₂O₇ superconducting films

Y. Q. Tang; Z. Z. Sheng; Z. Y. Chen; Y. F. Li; D. O. Pederson

Appl. Phys. Lett. 60, 3057–3059 (1992) https://doi.org/10.1063/1.106755

Abstract

View articletitled, New 100 K TlSr2(Ca,Cr)Cu2O7 superconducting films

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Exchange anisotropy in coupled films of Ni₈₁Fe₁₉ with NiO and Co_xNi_1−xO

M. J. Carey; A. E. Berkowitz

Appl. Phys. Lett. 60, 3060–3062 (1992) https://doi.org/10.1063/1.106756

Abstract

View articletitled, Exchange anisotropy in coupled films of Ni81Fe19 with NiO and CoxNi1−xO

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Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide

X. L. Xu; R. T. Kuehn; J. J. Wortman; M. C. Öztürk

Appl. Phys. Lett. 60, 3063–3065 (1992) https://doi.org/10.1063/1.106757

Abstract

View articletitled, Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide

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