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Volume 60, Issue 2

13 January 1992

All Issues

ISSN 0003-6951

EISSN 1077-3118

Real‐time picosecond electro‐optic oscilloscope technique using a tunable semiconductor laser

A. Galvanauskas; J. A. Tellefsen, Jr.; A. Krotkus; M. Öberg; B. Broberg

Appl. Phys. Lett. 60, 145–147 (1992) https://doi.org/10.1063/1.107456

Abstract

View articletitled, Real‐time picosecond electro‐optic oscilloscope technique using a tunable semiconductor laser

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Formation and bleaching of strong ultraviolet absorption bands in germanium implanted synthetic fused silica

J. Albert; K. O. Hill; B. Malo; D. C. Johnson; J. L. Brebner; Y. B. Trudeau; G. Kajrys

Appl. Phys. Lett. 60, 148–150 (1992) https://doi.org/10.1063/1.106998

Abstract

View articletitled, Formation and bleaching of strong ultraviolet absorption bands in germanium implanted synthetic fused silica

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Resonant Stark tuning of second‐order susceptibility in coupled quantum wells

Carlo Sirtori; Federico Capasso; Deborah L. Sivco; A. L. Hutchinson; Alfred Y. Cho

Appl. Phys. Lett. 60, 151–153 (1992) https://doi.org/10.1063/1.106999

Abstract

View articletitled, Resonant Stark tuning of second‐order susceptibility in coupled quantum wells

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Continuous‐wave photoluminescence excitation spectra of multiple narrow‐stepped quantum wells: Evidence for saturation of interface traps

Y. J. Ding; C. L. Guo; S. Li; J. B. Khurgin; K.‐K. Law; J. L. Merz

Appl. Phys. Lett. 60, 154–156 (1992) https://doi.org/10.1063/1.107000

Abstract

View articletitled, Continuous‐wave photoluminescence excitation spectra of multiple narrow‐stepped quantum wells: Evidence for saturation of interface traps

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On the temperature sensitivity of semiconductor lasers

J. O’Gorman; A. F. J. Levi; S. Schmitt‐Rink; T. Tanbun‐Ek; D. L. Coblentz; R. A. Logan

Appl. Phys. Lett. 60, 157–159 (1992) https://doi.org/10.1063/1.107001

Abstract

View articletitled, On the temperature sensitivity of semiconductor lasers

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Thermoplasticity and parallel‐plate poling of electro‐optic polyimide host thin films

J. F. Valley; J. W. Wu; S. Ermer; M. Stiller; E. S. Binkley; J. T. Kenney; G. F. Lipscomb; R. Lytel

Appl. Phys. Lett. 60, 160–162 (1992) https://doi.org/10.1063/1.107473

Abstract

View articletitled, Thermoplasticity and parallel‐plate poling of electro‐optic polyimide host thin films

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Gain measurements of Mn⁵⁺(3d²) doped Sr₅(PO₄)₃Cl and Ca₂PO₄Cl

J. A. Capobianco; G. Cormier; R. Moncorgé; H. Manaa; M. Bettinelli

Appl. Phys. Lett. 60, 163–165 (1992) https://doi.org/10.1063/1.107002

Abstract

View articletitled, Gain measurements of Mn5+(3d2) doped Sr5(PO4)3Cl and Ca2PO4Cl

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Intuitive model to include the effect of free‐carrier absorption in calculating the two‐photon absorption coefficient

Frances R. Laughton; John H. Marsh; John S. Roberts

Appl. Phys. Lett. 60, 166–168 (1992) https://doi.org/10.1063/1.106980

Abstract

View articletitled, Intuitive model to include the effect of free‐carrier absorption in calculating the two‐photon absorption coefficient

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Measurements of particle size kinetics from nanometer to micrometer scale in a low‐pressure argon‐silane radio‐frequency discharge

L. Boufendi; A. Plain; J. Ph. Blondeau; A. Bouchoule; C. Laure; M. Toogood

Appl. Phys. Lett. 60, 169–171 (1992) https://doi.org/10.1063/1.106981

Abstract

View articletitled, Measurements of particle size kinetics from nanometer to micrometer scale in a low‐pressure argon‐silane radio‐frequency discharge

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Transmission electron microscopy study of chemical‐vapor‐deposited diamond by a side‐view method

Yasuyuki Goto; Kazuaki Kurihara; Yumiko Sawamoto; Toshisuke Kitakohji

Appl. Phys. Lett. 60, 172–173 (1992) https://doi.org/10.1063/1.106982

Abstract

View articletitled, Transmission electron microscopy study of chemical‐vapor‐deposited diamond by a side‐view method

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Room‐temperature epitaxial growth of Ag(110)/GaAs(100) films

T. C. Nason; L. You; T.‐M. Lu

Appl. Phys. Lett. 60, 174–176 (1992) https://doi.org/10.1063/1.106983

Abstract

View articletitled, Room‐temperature epitaxial growth of Ag(110)/GaAs(100) films

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Contrast formation mechanism for the surface defects imaged by x‐ray topography under the condition of simultaneous specular and Bragg reflections

T. Kitano; S Kimura; T. Ishikawa

Appl. Phys. Lett. 60, 177–179 (1992) https://doi.org/10.1063/1.107438

Abstract

View articletitled, Contrast formation mechanism for the surface defects imaged by x‐ray topography under the condition of simultaneous specular and Bragg reflections

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Thermoelectric cooling at very low temperatures

Aharon Kapitulnik

Appl. Phys. Lett. 60, 180–182 (1992) https://doi.org/10.1063/1.106956

Abstract

View articletitled, Thermoelectric cooling at very low temperatures

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Photoemission from thick overlying epitaxial layers of CaF₂ on Si(111)

B. Quiniou; W. Schwarz; Z. Wu; R. M. Osgood; Q. Yang; Julia M. Phillips

Appl. Phys. Lett. 60, 183–185 (1992) https://doi.org/10.1063/1.106957

Abstract

View articletitled, Photoemission from thick overlying epitaxial layers of CaF2 on Si(111)

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Generation and anneal of a new kind of interface state in stressed and high‐temperature annealed metal‐oxide‐semiconductor devices

M. Berger; E. Avni; J. Shappir

Appl. Phys. Lett. 60, 186–188 (1992) https://doi.org/10.1063/1.106958

Abstract

View articletitled, Generation and anneal of a new kind of interface state in stressed and high‐temperature annealed metal‐oxide‐semiconductor devices

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All‐optical modulation in crystalline organic semiconductor waveguides

D. Y. Zang; S. R. Forrest

Appl. Phys. Lett. 60, 189–191 (1992) https://doi.org/10.1063/1.106959

Abstract

View articletitled, All‐optical modulation in crystalline organic semiconductor waveguides

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Giant nonlinear phase shift at exciton resonance in ZnSe

T. Saiki; K. Takeuchi; M. Kuwata‐Gonokami; T. Mitsuyu; K. Ohkawa

Appl. Phys. Lett. 60, 192–194 (1992) https://doi.org/10.1063/1.106960

Abstract

View articletitled, Giant nonlinear phase shift at exciton resonance in ZnSe

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Admittance spectroscopy measurements of band offsets in Si/Si_1−xGe_x/Si heterostructures

K. Nauka; T. I. Kamins; J. E. Turner; C. A. King; J. L. Hoyt; J. F. Gibbons

Appl. Phys. Lett. 60, 195–197 (1992) https://doi.org/10.1063/1.106961

Abstract

View articletitled, Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures

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Low pressure chemical vapor deposition of oxide from SiH₄/O₂: Chemistry and effects on electrical properties

M. Liehr; S. A. Cohen

Appl. Phys. Lett. 60, 198–200 (1992) https://doi.org/10.1063/1.106962

Abstract

View articletitled, Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties

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Epitaxial growth of alkaline earth fluoride films on HF‐treated Si and (NH₄)₂S_x‐treated GaAs without in situ cleaning

L. S. Hung; G. H. Braunstein; L. A. Bosworth

Appl. Phys. Lett. 60, 201–203 (1992) https://doi.org/10.1063/1.106963

Abstract

View articletitled, Epitaxial growth of alkaline earth fluoride films on HF‐treated Si and (NH4)2Sx‐treated GaAs without in situ cleaning

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Properties of a SiN_x/Si/GaAs system having amorphous and crystalline Si interlayers on (100) GaAs with different surface superstructures

Shinji Fujieda; Emmanuel Benoit; Toshio Baba

Appl. Phys. Lett. 60, 204–206 (1992) https://doi.org/10.1063/1.106964

Abstract

View articletitled, Properties of a SiNx/Si/GaAs system having amorphous and crystalline Si interlayers on (100) GaAs with different surface superstructures

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Bias‐stress‐induced creation and removal of dangling‐bond states in amorphous silicon thin‐film transistors

M. J. Powell; S. C. Deane; W. I. Milne

Appl. Phys. Lett. 60, 207–209 (1992) https://doi.org/10.1063/1.106965

Abstract

View articletitled, Bias‐stress‐induced creation and removal of dangling‐bond states in amorphous silicon thin‐film transistors

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Tailoring of electron and hole energies in strained GaAsP/AlGaAs quantum wells using fluorine‐impurity‐induced layer disordering

Utpal Das; Steve Davis; Ramu V. Ramaswamy; Fred A. Stevie

Appl. Phys. Lett. 60, 210–212 (1992) https://doi.org/10.1063/1.106966

Abstract

View articletitled, Tailoring of electron and hole energies in strained GaAsP/AlGaAs quantum wells using fluorine‐impurity‐induced layer disordering

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Two‐dimensional exciton dynamics in InGaAs/GaAs quantum wells

Yutaka Takahashi; Soichi Owa; Satoru S. Kano; Koji Muraki; Susumi Fukatsu; Yasuhiro Shiraki; Ryoichi Ito

Appl. Phys. Lett. 60, 213–215 (1992) https://doi.org/10.1063/1.106967

Abstract

View articletitled, Two‐dimensional exciton dynamics in InGaAs/GaAs quantum wells

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Polarity dependence of hot‐electron‐induced trap creation in metal‐oxide‐semiconductor capacitors

D. A. Buchanan

Appl. Phys. Lett. 60, 216–218 (1992) https://doi.org/10.1063/1.106968

Abstract

View articletitled, Polarity dependence of hot‐electron‐induced trap creation in metal‐oxide‐semiconductor capacitors

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High‐resolution recoil spectrometry for separate characterization of Ga and As in Al_xGa_(1−x)As structures

Mikael Hult; Harry J. Whitlow; Mikael Östling

Appl. Phys. Lett. 60, 219–221 (1992) https://doi.org/10.1063/1.106969

Abstract

View articletitled, High‐resolution recoil spectrometry for separate characterization of Ga and As in AlxGa(1−x)As structures

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Novel very sensitive analytical technique for compositional analysis of Hg_1−xCd_xTe epilayers

L. O. Bubulac; C. R. Viswanathan

Appl. Phys. Lett. 60, 222–224 (1992) https://doi.org/10.1063/1.106970

Abstract

View articletitled, Novel very sensitive analytical technique for compositional analysis of Hg1−xCdxTe epilayers

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In situ transmission electron microscopy studies of silicide‐mediated crystallization of amorphous silicon

C. Hayzelden; J. L. Batstone; R. C. Cammarata

Appl. Phys. Lett. 60, 225–227 (1992) https://doi.org/10.1063/1.106971

Abstract

View articletitled, In situ transmission electron microscopy studies of silicide‐mediated crystallization of amorphous silicon

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Electronic stopping power of Si and Ge for MeV‐energy Si and P ions

J. Keinonen; K. Arstila; P. Tikkanen

Appl. Phys. Lett. 60, 228–230 (1992) https://doi.org/10.1063/1.106972

Abstract

View articletitled, Electronic stopping power of Si and Ge for MeV‐energy Si and P ions

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Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures

G. Fuchs; J. Hörer; A. Hangleiter; V. Härle; F. Scholz; R. W. Glew; L. Goldstein

Appl. Phys. Lett. 60, 231–233 (1992) https://doi.org/10.1063/1.106973

Abstract

View articletitled, Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures

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Numerical studies of quantum conduction through a junction of wide‐narrow geometry

S. Nonoyama; K. Ishibashi; Y. Aoyagi; S. Namba

Appl. Phys. Lett. 60, 234–236 (1992) https://doi.org/10.1063/1.106974

Abstract

View articletitled, Numerical studies of quantum conduction through a junction of wide‐narrow geometry

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Analysis of an electron‐wave Y‐branch switch

Thomas Palm; Lars Thylén

Appl. Phys. Lett. 60, 237–239 (1992) https://doi.org/10.1063/1.106975

Abstract

View articletitled, Analysis of an electron‐wave Y‐branch switch

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Facet modulation selective epitaxy−a technique for quantum‐well wire doublet fabrication

Charles S. Tsai; John A. Lebens; Channing C. Ahn; Akbar Nouhi; Kerry J. Vahala

Appl. Phys. Lett. 60, 240–242 (1992) https://doi.org/10.1063/1.106976

Abstract

View articletitled, Facet modulation selective epitaxy−a technique for quantum‐well wire doublet fabrication

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Hot‐carrier effect on current transport in epitaxial YBa₂Cu₃O_y thin films

Ken‐ichi Matsui; Ken Sakuta; Takeshi Kobayashi

Appl. Phys. Lett. 60, 243–245 (1992) https://doi.org/10.1063/1.106977

Abstract

View articletitled, Hot‐carrier effect on current transport in epitaxial YBa2Cu3Oy thin films

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Measurements of noise and temperature coefficient of resistance on YBa₂Cu₃O_7−δ thin films in magnetic field

Zeynep Çelik‐Butler; Wiyi Yang; Donald P. Butler

Appl. Phys. Lett. 60, 246–248 (1992) https://doi.org/10.1063/1.106978

Abstract

View articletitled, Measurements of noise and temperature coefficient of resistance on YBa2Cu3O7−δ thin films in magnetic field

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Weak link dominated anisotropy of critical current density in polycrystalline Y₁Ba₂Cu₃O_7−x thin films

F. Yang; E. Narumi; S. Patel; D. T. Shaw

Appl. Phys. Lett. 60, 249–251 (1992) https://doi.org/10.1063/1.106979

Abstract

View articletitled, Weak link dominated anisotropy of critical current density in polycrystalline Y1Ba2Cu3O7−x thin films

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ac losses in powder‐in‐tube Bi₂Ca₂Sr₂Cu₃O₁₀ tapes at power frequencies

J. Orehotsky; K. M. Reilly; M. Suenaga; T. Hikata; M. Ueyama; K. Sato

Appl. Phys. Lett. 60, 252–254 (1992) https://doi.org/10.1063/1.106953

Abstract

View articletitled, ac losses in powder‐in‐tube Bi2Ca2Sr2Cu3O10 tapes at power frequencies

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Improvement in the properties of high T_c films fabricated in situ by laser ablation of YBa₂Cu₃O₇‐Ag targets

Rajiv K. Singh; D. Bhattacharya; P. Tiwari; J. Narayan; C. B. Lee

Appl. Phys. Lett. 60, 255–257 (1992) https://doi.org/10.1063/1.106954

Abstract

View articletitled, Improvement in the properties of high Tc films fabricated in situ by laser ablation of YBa2Cu3O7‐Ag targets

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Magneto‐optical evidence of phase separation in amorphous U‐As films

P. Fumagalli; R. J. Gambino; T. S. Plaskett; T. R. McGuire

Appl. Phys. Lett. 60, 258–260 (1992) https://doi.org/10.1063/1.106955

Abstract

View articletitled, Magneto‐optical evidence of phase separation in amorphous U‐As films

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