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Blue and green diode lasers in ZnSe‐based quantum wells
H. Jeon; J. Ding; A. V. Nurmikko; W. Xie; D. C. Grillo; M. Kobayashi; R. L. Gunshor; G. C. Hua; N. Otsuka
Appl. Phys. Lett. 60, 2045–2047 (1992)
https://doi.org/10.1063/1.107109
High frequency magnetic field sensors based on the Faraday effect in garnet thick films
Appl. Phys. Lett. 60, 2048–2050 (1992)
https://doi.org/10.1063/1.107110
Separate confinement electroabsorption modulator for 633 nm light
Appl. Phys. Lett. 60, 2054–2056 (1992)
https://doi.org/10.1063/1.107087
Epitaxial surface‐emitting laser on a lattice‐mismatched substrate
Appl. Phys. Lett. 60, 2057–2059 (1992)
https://doi.org/10.1063/1.107088
Third harmonic generation from MOx‐PbO‐GaO1.5 ternary glasses
Appl. Phys. Lett. 60, 2060–2061 (1992)
https://doi.org/10.1063/1.107089
Hydrogen assisted heat transfer during diamond growth using carbon and tantalum filaments
Appl. Phys. Lett. 60, 2068–2070 (1992)
https://doi.org/10.1063/1.107091
Effect of thermal treatment of passivation integrity of chemical vapor deposition silicon nitride
Appl. Phys. Lett. 60, 2074–2076 (1992)
https://doi.org/10.1063/1.107093
Inhibition of hydrogen plasma erosion and enhancement in wear resistance of tungsten implanted glassy carbon
Appl. Phys. Lett. 60, 2077–2079 (1992)
https://doi.org/10.1063/1.107094
Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon
Appl. Phys. Lett. 60, 2083–2085 (1992)
https://doi.org/10.1063/1.107096
Raman analysis of light‐emitting porous silicon
Appl. Phys. Lett. 60, 2086–2088 (1992)
https://doi.org/10.1063/1.107097
Adatom processes near step‐edges and evolution of long range order in semiconductor alloys grown from vapor phase
Appl. Phys. Lett. 60, 2095–2097 (1992)
https://doi.org/10.1063/1.107100
Luminescence and Raman measurements of InyGa1−yP (0.3<y<0.5) grown by gas‐source molecular beam epitaxy
Appl. Phys. Lett. 60, 2098–2100 (1992)
https://doi.org/10.1063/1.107101
Modeling the cycling degradation of silicon‐oxide‐nitride‐oxide‐semiconductor transistors
Appl. Phys. Lett. 60, 2101–2103 (1992)
https://doi.org/10.1063/1.107102
Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature
Appl. Phys. Lett. 60, 2104–2106 (1992)
https://doi.org/10.1063/1.107103
Uniform β‐SiC thin‐film growth on Si by low pressure rapid thermal chemical vapor deposition
Appl. Phys. Lett. 60, 2107–2109 (1992)
https://doi.org/10.1063/1.107104
Observation of negative persistent photoconductivity in an n‐channel GaAs/AlxGa1−xAs single heterojunction
Appl. Phys. Lett. 60, 2113–2115 (1992)
https://doi.org/10.1063/1.107106
Electron paramagnetic resonance study of porous silicon
Appl. Phys. Lett. 60, 2116–2117 (1992)
https://doi.org/10.1063/1.107107
Impact ionization and positive charge formation in silicon dioxide films on silicon
Appl. Phys. Lett. 60, 2118–2120 (1992)
https://doi.org/10.1063/1.107081
Influence of ionized impurities on the linewidth of intersubband transitions in GaAs/GaAlAs quantum wells
Appl. Phys. Lett. 60, 2121–2122 (1992)
https://doi.org/10.1063/1.107082
k‐space carrier dynamics in GaAs
Appl. Phys. Lett. 60, 2123–2125 (1992)
https://doi.org/10.1063/1.107083
Very thin oxide film on a silicon surface by ultraclean oxidation
Appl. Phys. Lett. 60, 2126–2128 (1992)
https://doi.org/10.1063/1.107084
Ga2Te3 and tellurium interfacial layers in ZnTe/GaSb heterostructures studied by Raman scattering
Appl. Phys. Lett. 60, 2129–2131 (1992)
https://doi.org/10.1063/1.107085
Heteroepitaxial growth of AlAs using dimethylethylamine alane as an Al precursor
Appl. Phys. Lett. 60, 2132–2134 (1992)
https://doi.org/10.1063/1.107086
Quantum confinement effects in strained silicon‐germanium alloy quantum wells
Appl. Phys. Lett. 60, 2135–2137 (1992)
https://doi.org/10.1063/1.107061
dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor
Appl. Phys. Lett. 60, 2138–2140 (1992)
https://doi.org/10.1063/1.107062
Electron mobility enhancement by confining optical phonons in GaAs/AlAs multiple quantum wells
Appl. Phys. Lett. 60, 2141–2143 (1992)
https://doi.org/10.1063/1.107063
Improved aqueous etchant for high Tc superconductor materials
Appl. Phys. Lett. 60, 2147–2149 (1992)
https://doi.org/10.1063/1.107065
Effective electric field in dc magnetization measurements: Comparing magnetization to transport critical currents
Appl. Phys. Lett. 60, 2153–2155 (1992)
https://doi.org/10.1063/1.107067
Preparation of an oxide film through a hydroxide compound layer
Appl. Phys. Lett. 60, 2156–2158 (1992)
https://doi.org/10.1063/1.107068
Photoinduced enhancement of superconductivity
G. Nieva; E. Osquiguil; J. Guimpel; M. Maenhoudt; B. Wuyts; Y. Bruynseraede; M. B. Maple; Ivan K. Schuller
Appl. Phys. Lett. 60, 2159–2161 (1992)
https://doi.org/10.1063/1.107069
Low‐defect colorless Bi12SiO20 grown by hydrothermal techniques
Appl. Phys. Lett. 60, 2162–2163 (1992)
https://doi.org/10.1063/1.107070
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
J. Wang, D. G. Rickel, et al.