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Spatial distributions of x‐ray lasing spectral linewidth and electron density in a lithiumlike silicon plasma
Appl. Phys. Lett. 60, 1649–1651 (1992)
https://doi.org/10.1063/1.107225
Temperature‐tunable, single frequency microcavity lasers fabricated from flux‐grown YCeAG:Nd
Appl. Phys. Lett. 60, 1652–1654 (1992)
https://doi.org/10.1063/1.107226
Thermally curable second‐order nonlinear‐optical polymer
Appl. Phys. Lett. 60, 1655–1657 (1992)
https://doi.org/10.1063/1.107227
Electro‐optic polymer waveguide fabricated using electric‐field‐assisted chemical vapor deposition
Appl. Phys. Lett. 60, 1661–1663 (1992)
https://doi.org/10.1063/1.107229
Optical nonlinear responses of a quantum well photodiode with a non‐ohmic contact
Appl. Phys. Lett. 60, 1664–1666 (1992)
https://doi.org/10.1063/1.107230
Reactions of hydrogenated defects in fused silica caused by thermal treatment and deep ultraviolet irradiation
Appl. Phys. Lett. 60, 1667–1669 (1992)
https://doi.org/10.1063/1.107231
Destruction of the quantum well structure of thin silicon‐germanium superlattices by ion implantation
Appl. Phys. Lett. 60, 1673–1675 (1992)
https://doi.org/10.1063/1.107233
Photoluminescence study of lateral carrier confinement and compositional intermixing in (Al,Ga)Sb lateral superlattices
Appl. Phys. Lett. 60, 1676–1678 (1992)
https://doi.org/10.1063/1.107234
High resolution electron microscopy of crystalline–amorphous interface: An indication to Eden aggregate
Appl. Phys. Lett. 60, 1682–1684 (1992)
https://doi.org/10.1063/1.107236
Nanometer‐scale morphology of homoepitaxial diamond films by atomic force microscopy
Appl. Phys. Lett. 60, 1685–1687 (1992)
https://doi.org/10.1063/1.107237
Defects in amorphous silicon probed by subpicosecond photocarrier dynamics
Appl. Phys. Lett. 60, 1688–1690 (1992)
https://doi.org/10.1063/1.107212
25.2% efficiency (1‐sun, air mass 0) AlGaAs/GaAs/InGaAsP three‐junction, two‐terminal solar cell
Appl. Phys. Lett. 60, 1691–1693 (1992)
https://doi.org/10.1063/1.107213
Formation of deep complexes in ZnSe during ohmic contact annealing
Appl. Phys. Lett. 60, 1694–1696 (1992)
https://doi.org/10.1063/1.107214
Small signal and continuous wave operation of the lateral current injection heterostructure field‐effect laser
Appl. Phys. Lett. 60, 1697–1699 (1992)
https://doi.org/10.1063/1.107215
Correlation between silicon hydride species and the photoluminescence intensity of porous silicon
C. Tsai; K.‐H. Li; D. S. Kinosky; R.‐Z. Qian; T.‐C. Hsu; J. T. Irby; S. K. Banerjee; A. F. Tasch; Joe C. Campbell; B. K. Hance; J. M. White
Appl. Phys. Lett. 60, 1700–1702 (1992)
https://doi.org/10.1063/1.107190
Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition
Appl. Phys. Lett. 60, 1703–1705 (1992)
https://doi.org/10.1063/1.107191
Thermal‐stress‐induced voiding in narrow, passivated Cu lines
Appl. Phys. Lett. 60, 1706–1708 (1992)
https://doi.org/10.1063/1.107192
Growth of InAs and (InAs)1(GaAs)5 superlattice by atomic layer epitaxy using dimethylindium chloride
Appl. Phys. Lett. 60, 1717–1719 (1992)
https://doi.org/10.1063/1.107480
Photoluminescence from electron‐hole plasmas confined in Si/Si1−xGex/Si quantum wells
Appl. Phys. Lett. 60, 1720–1722 (1992)
https://doi.org/10.1063/1.107196
Intensity oscillations in reflection high‐energy electron diffraction during disilane gas source molecular beam epitaxy
Appl. Phys. Lett. 60, 1723–1725 (1992)
https://doi.org/10.1063/1.107197
Room‐temperature recombination of point defects produced in silicon p‐n junctions by light ion irradiation
Appl. Phys. Lett. 60, 1726–1728 (1992)
https://doi.org/10.1063/1.107198
Direct observation of band‐edge luminescence and alloy luminescence from ultrametastable silicon‐germanium alloy layers
Appl. Phys. Lett. 60, 1729–1731 (1992)
https://doi.org/10.1063/1.107199
Temperature dependence of photoconductivity in buckminsterfullerene films
Appl. Phys. Lett. 60, 1735–1737 (1992)
https://doi.org/10.1063/1.107201
Molecular beam epitaxial regrowth on in situ plasma‐etched AlAs/AlGaAs heterostructures
Kent D. Choquette; M. Hong; R. S. Freund; S. N. G. Chu; J. P. Mannaerts; R. C. Wetzel; R. E. Leibenguth
Appl. Phys. Lett. 60, 1738–1740 (1992)
https://doi.org/10.1063/1.107202
Flux pinning by ordered oxygen‐deficient phases in nearly stoichiometric YBa2Cu3O7−δ single crystals
Appl. Phys. Lett. 60, 1741–1743 (1992)
https://doi.org/10.1063/1.107203
Dielectric properties of SrTiO3 thin films used in high Tc superconducting field‐effect devices
Appl. Phys. Lett. 60, 1744–1746 (1992)
https://doi.org/10.1063/1.107204
Preparation of superconductive Y‐Ba‐Cu‐O layers formed by aggregates of released particles using laser deposition in air
Appl. Phys. Lett. 60, 1747–1749 (1992)
https://doi.org/10.1063/1.107205
Measurement of ζ potential of YBa2Cu3O7−δ from the adsorption of hydronium ions (H+, OH−)
Appl. Phys. Lett. 60, 1750–1752 (1992)
https://doi.org/10.1063/1.107206
Epitaxial MgO buffer layers for YBa2Cu3O7−x thin film on GaAs
Appl. Phys. Lett. 60, 1753–1755 (1992)
https://doi.org/10.1063/1.107207
Josephson characteristics in a‐axis oriented YBa2Cu3O7−δ/PrBa2Cu3O7−δ′/YBa2Cu3O7−δ junctions
Appl. Phys. Lett. 60, 1756–1758 (1992)
https://doi.org/10.1063/1.107208
New six face lithography technique for realization of contacts on μm size Y1Ba2Cu3O7−x single crystals
Appl. Phys. Lett. 60, 1759–1761 (1992)
https://doi.org/10.1063/1.107209
Short‐range order effects on copper L3,2 transitions in Cu‐Pd alloys
Appl. Phys. Lett. 60, 1762–1764 (1992)
https://doi.org/10.1063/1.107210
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Hard x-ray photoemission study of bulk single-crystalline InGaZnO4
Goro Shibata, Yunosuke Takahashi, et al.
Shining light in a heartbeat: Controlling cardiac bioelectricity with membrane-targeted photoswitches
Chiara Florindi, Giulia Simoncini, et al.