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Time‐division multiplexing by a photoconducting antenna array
Appl. Phys. Lett. 59, 3207–3209 (1991)
https://doi.org/10.1063/1.105733
New modulator for far‐infrared light: Integrated mirror optical switch
Appl. Phys. Lett. 59, 3210–3212 (1991)
https://doi.org/10.1063/1.105734
Optical strip waveguides in KNbO3 formed by He ion implantation
Appl. Phys. Lett. 59, 3213–3215 (1991)
https://doi.org/10.1063/1.105735
High contrast, submilliwatt power InGaAs/GaAs strained‐layer multiple‐quantum‐well asymmetric reflection modulator
Appl. Phys. Lett. 59, 3216–3218 (1991)
https://doi.org/10.1063/1.105736
Phase‐locked ridge waveguide InGaAs‐GaAs‐AlGaAs strained‐layer quantum well heterostructure laser arrays
Appl. Phys. Lett. 59, 3222–3224 (1991)
https://doi.org/10.1063/1.105738
Broadband optical detection of ultrasound by two‐wave mixing in a photorefractive crystal
Appl. Phys. Lett. 59, 3233–3235 (1991)
https://doi.org/10.1063/1.105742
Velocity measurements in polyetheretherketone‐carbon fiber composite using excimer laser generated ultrasound
Appl. Phys. Lett. 59, 3236–3238 (1991)
https://doi.org/10.1063/1.105743
Electron drift velocities in xenon and xenon‐nitrogen gas mixtures
Appl. Phys. Lett. 59, 3239–3240 (1991)
https://doi.org/10.1063/1.105744
Correlation of texture with electromigration behavior in Al metallization
Appl. Phys. Lett. 59, 3241–3243 (1991)
https://doi.org/10.1063/1.105745
Endotaxial growth of CoSi2 within (111) oriented Si in a molecular beam epitaxy system
Appl. Phys. Lett. 59, 3249–3251 (1991)
https://doi.org/10.1063/1.105747
Suppression of Al‐Ga interdiffusion by a WNx film on an AlxGa1−xAs/AlAs superlattice structure
Appl. Phys. Lett. 59, 3252–3254 (1991)
https://doi.org/10.1063/1.105748
Ordering effects on the electrical characteristics of Ga0.5In0.5P grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 59, 3261–3263 (1991)
https://doi.org/10.1063/1.105751
Intense photoluminescence from laterally anodized porous Si
Appl. Phys. Lett. 59, 3264–3266 (1991)
https://doi.org/10.1063/1.105752
Lattice site locations of excess arsenic atoms in gallium arsenide grown by low‐temperature molecular beam epitaxy
Appl. Phys. Lett. 59, 3267–3269 (1991)
https://doi.org/10.1063/1.105726
Residual oxygen levels in AlGaAs/GaAs quantum‐well laser structures: Effects of Si and Be doping and substrate misorientation
Appl. Phys. Lett. 59, 3270–3272 (1991)
https://doi.org/10.1063/1.105727
Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
Appl. Phys. Lett. 59, 3276–3278 (1991)
https://doi.org/10.1063/1.105729
Optically detected Auger recombinations in erbium‐ and ytterbium‐ doped InP
Appl. Phys. Lett. 59, 3279–3281 (1991)
https://doi.org/10.1063/1.105705
Surface topography changes during the growth of GaAs by molecular beam epitaxy
Appl. Phys. Lett. 59, 3282–3284 (1991)
https://doi.org/10.1063/1.105706
Conduction band structure of GexSi1−x using spatially resolved electron energy‐loss scattering
Appl. Phys. Lett. 59, 3285–3287 (1991)
https://doi.org/10.1063/1.105707
P2S5 passivation of GaAs surfaces for scanning tunneling microscopy in air
Appl. Phys. Lett. 59, 3288–3290 (1991)
https://doi.org/10.1063/1.105708
Selective WSi2 Schottky diodes made by rapid thermal chemical vapor deposition of WCl6
Appl. Phys. Lett. 59, 3291–3293 (1991)
https://doi.org/10.1063/1.105709
Light‐induced changes in hydrogenated and deuterated amorphous silicon films and solar cells
Appl. Phys. Lett. 59, 3294–3296 (1991)
https://doi.org/10.1063/1.105710
Sharp phosphorus spikes in silicon grown by fast gas‐switching chemical vapor deposition at reduced and atmospheric pressure
Appl. Phys. Lett. 59, 3297–3299 (1991)
https://doi.org/10.1063/1.105711
Fermi level pinning at epitaxial Si on GaAs(100) interfaces
Appl. Phys. Lett. 59, 3300–3302 (1991)
https://doi.org/10.1063/1.105712
High detectivity InGaAs base infrared hot‐electron transistor
Appl. Phys. Lett. 59, 3303–3305 (1991)
https://doi.org/10.1063/1.105713
Photoluminescence characterization of pseudomorphic modulation‐doped quantum wells at high carrier sheet densities
Appl. Phys. Lett. 59, 3306–3308 (1991)
https://doi.org/10.1063/1.105714
Highly conductive ultrathin crystalline Si layers by thermal crystallization of amorphous Si
Appl. Phys. Lett. 59, 3309–3311 (1991)
https://doi.org/10.1063/1.105715
Dielectric properties of nonsquare AlGaAs/GaAs single quantum wells at photon energies below the band gap
Appl. Phys. Lett. 59, 3312–3314 (1991)
https://doi.org/10.1063/1.105716
Scaling the Si metal‐oxide‐semiconductor field‐effect transistor into the 0.1‐μm regime using vertical doping engineering
Appl. Phys. Lett. 59, 3315–3317 (1991)
https://doi.org/10.1063/1.105717
High electron mobility in modulation‐doped Si/SiGe quantum well structures
Appl. Phys. Lett. 59, 3318–3320 (1991)
https://doi.org/10.1063/1.105718
Surface reconstruction limited mechanism of molecular‐beam epitaxial growth of AlGaAs on (111)B face
Appl. Phys. Lett. 59, 3321–3323 (1991)
https://doi.org/10.1063/1.105719
Study of the oxygen depletion in the film‐substrate interface of superconducting YBa2Cu3O7−x films
Appl. Phys. Lett. 59, 3327–3329 (1991)
https://doi.org/10.1063/1.106397
Enhanced quantum interference effects in parallel Josephson junction arrays
Appl. Phys. Lett. 59, 3330–3332 (1991)
https://doi.org/10.1063/1.105721
Transient electric field generated by nonequilibrium states in superconducting Pb films
Appl. Phys. Lett. 59, 3333–3335 (1991)
https://doi.org/10.1063/1.105722
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Broadband transparency in terahertz free-standing anapole metasurface
Isaac Appiah Otoo, Alexey Basharin, et al.