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Efficient energy extraction from a diode‐pumped Q‐switched Tm,Ho:YLiF4 laser
Appl. Phys. Lett. 59, 2926–2928 (1991)
https://doi.org/10.1063/1.105850
Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps
Appl. Phys. Lett. 59, 2929–2931 (1991)
https://doi.org/10.1063/1.105854
Observation of third order optical nonlinearity due to intersubband transitions in AlGaAs/GaAs superlattices
Appl. Phys. Lett. 59, 2932–2934 (1991)
https://doi.org/10.1063/1.105827
Large photoinduced birefringence in an optically nonlinear polyester polymer
Appl. Phys. Lett. 59, 2935–2937 (1991)
https://doi.org/10.1063/1.105828
Two‐photon absorption in 4‐butoxycarbonylmethylurethane polydiacetylene waveguides
Appl. Phys. Lett. 59, 2938–2940 (1991)
https://doi.org/10.1063/1.105829
Many‐body effects in the gain spectra of strained quantum wells
Appl. Phys. Lett. 59, 2941–2943 (1991)
https://doi.org/10.1063/1.105830
Hybrid soliton pulse source using a silica waveguide external cavity and Bragg reflector
P. A. Morton; R. Adar; R. C. Kistler; C. H. Henry; T. Tanbun‐Ek; R. A. Logan; D. L. Coblentz; A. M. Sergent; K. W. Wecht
Appl. Phys. Lett. 59, 2944–2946 (1991)
https://doi.org/10.1063/1.105806
Laser‐induced fluorescence on Hg+ in Hg‐Ar discharges
Appl. Phys. Lett. 59, 2947–2949 (1991)
https://doi.org/10.1063/1.105807
Cumulative laser irradiation effects on ions in the plume of YBa2Cu3O7−δ and particulates at the film surface
Appl. Phys. Lett. 59, 2950–2952 (1991)
https://doi.org/10.1063/1.105808
Study of the changes in the infrared transmission of SiO2 spin‐on‐glass due to ion implantation
Appl. Phys. Lett. 59, 2953–2955 (1991)
https://doi.org/10.1063/1.105809
Reactivity of C60 in pure oxygen
H. S. Chen; A. R. Kortan; R. C. Haddon; M. L. Kaplan; C. H. Chen; A. M. Mujsce; H. Chou; D. A. Fleming
Appl. Phys. Lett. 59, 2956–2958 (1991)
https://doi.org/10.1063/1.105810
Creation of E′ defects in vitreous SiO2 by energetic electrons produced by x irradiation
Appl. Phys. Lett. 59, 2959–2961 (1991)
https://doi.org/10.1063/1.105811
Material dependence of positron implantation depths
Appl. Phys. Lett. 59, 2962–2964 (1991)
https://doi.org/10.1063/1.105812
Development of high‐strength, high‐conductivity Cu–Ag alloys for high‐field pulsed magnet use
Appl. Phys. Lett. 59, 2965–2967 (1991)
https://doi.org/10.1063/1.105813
Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide
Appl. Phys. Lett. 59, 2968–2970 (1991)
https://doi.org/10.1063/1.105814
InGaAs/InP multiple quantum well tunable Bragg reflector
Appl. Phys. Lett. 59, 2971–2973 (1991)
https://doi.org/10.1063/1.105815
Exponential growth of periodic surface ripples generated in laser‐induced etching of GaAs
Appl. Phys. Lett. 59, 2974–2976 (1991)
https://doi.org/10.1063/1.105816
Intersubband absorption in the conduction band of Si/Si1−xGex multiple quantum wells
Appl. Phys. Lett. 59, 2977–2979 (1991)
https://doi.org/10.1063/1.105817
Unintentional hydrogen concentration in liquid encapsulation Czochralski grown III–V compounds
Appl. Phys. Lett. 59, 2980–2982 (1991)
https://doi.org/10.1063/1.105818
Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy
Appl. Phys. Lett. 59, 2983–2985 (1991)
https://doi.org/10.1063/1.105819
Surface structure of selenium‐treated GaAs (001) studied by field ion scanning tunneling microscopy
Appl. Phys. Lett. 59, 2986–2988 (1991)
https://doi.org/10.1063/1.106401
Modified growth kinetics of ion induced yttrium–silicide layers during subsequent thermal annealing
Appl. Phys. Lett. 59, 2989–2991 (1991)
https://doi.org/10.1063/1.105820
Cation site ordering and conduction electron scattering in GaInP2
Appl. Phys. Lett. 59, 2998–3000 (1991)
https://doi.org/10.1063/1.105823
Effect of annealing ambient on the removal of oxide precipitates in high‐dose oxygen implanted silicon
Appl. Phys. Lett. 59, 3003–3005 (1991)
https://doi.org/10.1063/1.105825
Modeling of cross‐well carrier transport in a multiple quantum well modulator
Appl. Phys. Lett. 59, 3009–3011 (1991)
https://doi.org/10.1063/1.105831
Model for Si–SiO2 interface state formation during irradiation and during post‐irradiation exposure to hydrogen environment
Appl. Phys. Lett. 59, 3012–3014 (1991)
https://doi.org/10.1063/1.105801
Investigation of tilted superlattices for quantum‐wire laser applications
Appl. Phys. Lett. 59, 3015–3017 (1991)
https://doi.org/10.1063/1.105802
Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy
Appl. Phys. Lett. 59, 3018–3020 (1991)
https://doi.org/10.1063/1.105803
Low nonlinear gain in InGaAs/InGaAlAs separate confinement multiquantum well lasers
Appl. Phys. Lett. 59, 3024–3026 (1991)
https://doi.org/10.1063/1.105781
YBa2Cu3O7 whiskers grown from the gas phase
Appl. Phys. Lett. 59, 3027–3029 (1991)
https://doi.org/10.1063/1.105782
Weak links and dc SQUIDS on artificial nonsymmetric grain boundaries in YBa2Cu3O7−δ
Z. G. Ivanov; P. Å. Nilsson; D. Winkler; J. A. Alarco; T. Claeson; E. A. Stepantsov; A. Ya. Tzalenchuk
Appl. Phys. Lett. 59, 3030–3032 (1991)
https://doi.org/10.1063/1.105783
Penetration depth and microwave loss measurements with a YBa2Cu3O7−δ/LaAlO3/YBa2Cu3O7−δ trilayer transmission line
Appl. Phys. Lett. 59, 3033–3035 (1991)
https://doi.org/10.1063/1.105784
YBa2Cu3O7−x‐Y2O3 system and in situ deposition of trilayer heterostructures by coevaporation
Appl. Phys. Lett. 59, 3036–3038 (1991)
https://doi.org/10.1063/1.105785
Scanning tunneling microscopy of the surface morphology of YBa2Cu3Ox thin films between 300 and 76 K
Appl. Phys. Lett. 59, 3039–3041 (1991)
https://doi.org/10.1063/1.105786
Imaging of the microwave field distribution in Josephson tunnel junctions
Appl. Phys. Lett. 59, 3042–3044 (1991)
https://doi.org/10.1063/1.105787
In situ deposition of superconducting YBa2Cu3O7−x and DyBa2Cu3O7−x thin films by organometallic molecular‐beam epitaxy
Appl. Phys. Lett. 59, 3045–3047 (1991)
https://doi.org/10.1063/1.105788
Oxygen‐vacancy ordering in Y2Ba4Cu7O15−ε
Appl. Phys. Lett. 59, 3048–3050 (1991)
https://doi.org/10.1063/1.105789
Comment on ‘‘Observation of two in‐plane epitaxial states in YBa2Cu3O7−δ films on yttria‐stabilized ZrO2’’
Appl. Phys. Lett. 59, 3059 (1991)
https://doi.org/10.1063/1.105793
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.