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Volume 58, Issue 11

18 March 1991

All Issues

ISSN 0003-6951

EISSN 1077-3118

Observations of ultrafast nonlinear refraction in an InGaAsP optical amplifier

R. S. Grant; W. Sibbett

Appl. Phys. Lett. 58, 1119–1121 (1991) https://doi.org/10.1063/1.104389

Abstract

View articletitled, Observations of ultrafast nonlinear refraction in an InGaAsP optical amplifier

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InGaAs‐GaAs quantum well vertical‐cavity surface‐emitting laser using molecular beam epitaxial regrowth

C. Lei; T. J. Rogers; D. G. Deppe; B. G. Streetman

Appl. Phys. Lett. 58, 1122–1124 (1991) https://doi.org/10.1063/1.104390

Abstract

View articletitled, InGaAs‐GaAs quantum well vertical‐cavity surface‐emitting laser using molecular beam epitaxial regrowth

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Temperature dependence of threshold of strained quantum well lasers

N. K. Dutta; J. Lopata; D. L. Sivco; A. Y. Cho

Appl. Phys. Lett. 58, 1125–1127 (1991) https://doi.org/10.1063/1.104391

Abstract

View articletitled, Temperature dependence of threshold of strained quantum well lasers

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Third‐harmonic generation measurement of nonlinearities in SiO₂‐TiO₂ sol‐gel films

W. E. Torruellas; L. A. Weller‐Brophy; R. Zanoni; G. I. Stegeman; Z. Osborne; B. J. J. Zelinski

Appl. Phys. Lett. 58, 1128–1130 (1991) https://doi.org/10.1063/1.104392

Abstract

View articletitled, Third‐harmonic generation measurement of nonlinearities in SiO2‐TiO2 sol‐gel films

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Large stable photoinduced refractive index change in a nonlinear optical polyester polymer with disperse red side groups

Yongqiang Shi; William H. Steier; Luping Yu; Mai Chen; Larry R. Dalton

Appl. Phys. Lett. 58, 1131–1133 (1991) https://doi.org/10.1063/1.104393

Abstract

View articletitled, Large stable photoinduced refractive index change in a nonlinear optical polyester polymer with disperse red side groups

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Poling of polymeric thin films at ambient temperatures for second‐harmonic generation

Stephen E. Barry; David S. Soane

Appl. Phys. Lett. 58, 1134–1136 (1991) https://doi.org/10.1063/1.104394

Abstract

View articletitled, Poling of polymeric thin films at ambient temperatures for second‐harmonic generation

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Phase conjugation in amorphous germanium diselenide thin films

M. Fernández Guasti; E. Haro Poniatowski; S. Camacho López

Appl. Phys. Lett. 58, 1137–1139 (1991) https://doi.org/10.1063/1.104395

Abstract

View articletitled, Phase conjugation in amorphous germanium diselenide thin films

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High‐power tunable operation of AlGaAs/GaAs quantum well lasers in an external grating cavity

P. Gavrilovic; V. B. Smirnitskii; J. Bisberg; M. O’Neill

Appl. Phys. Lett. 58, 1140–1142 (1991) https://doi.org/10.1063/1.104396

Abstract

View articletitled, High‐power tunable operation of AlGaAs/GaAs quantum well lasers in an external grating cavity

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GaAs‐oxide removal using an electron cyclotron resonance hydrogen plasma

Z. Lu; M. T. Schmidt; D. Chen; R. M. Osgood, Jr.; W. M. Holber; D. V. Podlesnik; J. Forster

Appl. Phys. Lett. 58, 1143–1145 (1991) https://doi.org/10.1063/1.104397

Abstract

View articletitled, GaAs‐oxide removal using an electron cyclotron resonance hydrogen plasma

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Up‐conversion of red light to green by a new type of light transducer using organic electroluminescent diode combined with photoresponsive amorphous silicon carbide

Masahiro Hiramoto; Kanji Yoshimura; Tomoya Miyao; Masaaki Yokoyama

Appl. Phys. Lett. 58, 1146–1148 (1991) https://doi.org/10.1063/1.104398

Abstract

View articletitled, Up‐conversion of red light to green by a new type of light transducer using organic electroluminescent diode combined with photoresponsive amorphous silicon carbide

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Direct detection of microdefects in beta barium metaborate bulk crystals by light scattering tomograph

Jianguo Hou; Qiguang Tan; Qinnan Zhao; Baichang Wu; Chuangtian Chen

Appl. Phys. Lett. 58, 1149–1151 (1991) https://doi.org/10.1063/1.104347

Abstract

View articletitled, Direct detection of microdefects in beta barium metaborate bulk crystals by light scattering tomograph

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Redistribution of Sb in an atomic‐layer‐doped Si

S. Fukatsu; S. Kubo; Y. Shiraki; R. Ito

Appl. Phys. Lett. 58, 1152–1154 (1991) https://doi.org/10.1063/1.104348

Abstract

View articletitled, Redistribution of Sb in an atomic‐layer‐doped Si

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Fiber fragmentation in a single‐filament composite

W. A. Curtin

Appl. Phys. Lett. 58, 1155–1157 (1991) https://doi.org/10.1063/1.104349

Abstract

View articletitled, Fiber fragmentation in a single‐filament composite

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In‐based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor

F. Ren; S. J. Pearton; W. S. Hobson; T. R. Fullowan; A. B. Emerson; D. M. Schleich

Appl. Phys. Lett. 58, 1158–1160 (1991) https://doi.org/10.1063/1.104350

Abstract

View articletitled, In‐based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor

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Lead zirconate titanate films by rapid thermal processing

C. V. R. Vasant Kumar; M. Sayer; R. Pascual; D. T. Amm; Z. Wu; D. M. Swanston

Appl. Phys. Lett. 58, 1161–1163 (1991) https://doi.org/10.1063/1.104351

Abstract

View articletitled, Lead zirconate titanate films by rapid thermal processing

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Electroluminescence and impact ionization phenomena in a double‐barrier resonant tunneling structure

C. R. H. White; M. S. Skolnick; L. Eaves; M. L. Leadbeater

Appl. Phys. Lett. 58, 1164–1166 (1991) https://doi.org/10.1063/1.104352

Abstract

View articletitled, Electroluminescence and impact ionization phenomena in a double‐barrier resonant tunneling structure

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Evidence for the passivation effect in (NH₄)₂S_x‐treated GaAs observed by slow positrons

Jong‐Lam Lee; Long Wei; Shoichiro Tanigawa; Haruhiro Oigawa; Yasuo Nannichi

Appl. Phys. Lett. 58, 1167–1169 (1991) https://doi.org/10.1063/1.104353

Abstract

View articletitled, Evidence for the passivation effect in (NH4)2Sx‐treated GaAs observed by slow positrons

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Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition

T. Soga; T. George; T. Jimbo; M. Umeno; E. R. Weber

Appl. Phys. Lett. 58, 1170–1172 (1991) https://doi.org/10.1063/1.104354

Abstract

View articletitled, Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition

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Electromigration in p‐type ZnSe:Li

M. A. Haase; J. M. DePuydt; H. Cheng; J. E. Potts

Appl. Phys. Lett. 58, 1173–1174 (1991) https://doi.org/10.1063/1.104355

Abstract

View articletitled, Electromigration in p‐type ZnSe:Li

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Experimental measurement of bulk and edge generation in Al_0.4Ga_0.6As PiN structures

P. G. Neudeck; J. A. Cooper, Jr.; M. R. Melloch

Appl. Phys. Lett. 58, 1175–1177 (1991) https://doi.org/10.1063/1.104356

Abstract

View articletitled, Experimental measurement of bulk and edge generation in Al0.4Ga0.6As PiN structures

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Laser surface seeding for via plug filling

N. Zhu; T. Cacouris; R. Scarmozzino; R. M. Osgood, Jr.

Appl. Phys. Lett. 58, 1178–1180 (1991) https://doi.org/10.1063/1.104357

Abstract

View articletitled, Laser surface seeding for via plug filling

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Global planarization of spun‐on thin films by reflow

David E. Bornside; Robert A. Brown; Sanjiv Mittal; Franz T. Geyling

Appl. Phys. Lett. 58, 1181–1183 (1991) https://doi.org/10.1063/1.104358

Abstract

View articletitled, Global planarization of spun‐on thin films by reflow

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Strain‐induced nonlinear energy‐band splitting of Si_1−xGe_x alloys coherently grown on (111) and (110) oriented Ge substrates

Q. M. Ma; K. L. Wang

Appl. Phys. Lett. 58, 1184–1186 (1991) https://doi.org/10.1063/1.104359

Abstract

View articletitled, Strain‐induced nonlinear energy‐band splitting of Si1−xGex alloys coherently grown on (111) and (110) oriented Ge substrates

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Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen

M. de Keijser; C. van Opdorp

Appl. Phys. Lett. 58, 1187–1189 (1991) https://doi.org/10.1063/1.104360

Abstract

View articletitled, Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen

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Formation of highly n‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide

D. K. Sadana; J. P. de Souza; F. Cardone

Appl. Phys. Lett. 58, 1190–1192 (1991) https://doi.org/10.1063/1.104361

Abstract

View articletitled, Formation of highly n‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide

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Persistent photoconductivity in low‐energy argon ion‐bombarded semi‐insulating GaAs

A. Vaseashta; L. C. Burton

Appl. Phys. Lett. 58, 1193–1195 (1991) https://doi.org/10.1063/1.104362

Abstract

View articletitled, Persistent photoconductivity in low‐energy argon ion‐bombarded semi‐insulating GaAs

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Crystallization of amorphous silicon by reconstructive transformation utilizing gold

J. Stoemenos; J. McIntosh; N. A. Economou; Y. K. Bhatnagar; P. A. Coxon; A. J. Lowe; M. G. Clark

Appl. Phys. Lett. 58, 1196–1198 (1991) https://doi.org/10.1063/1.104363

Abstract

View articletitled, Crystallization of amorphous silicon by reconstructive transformation utilizing gold

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Native oxide stabilization of AlAs‐GaAs heterostructures

A. R. Sugg; N. Holonyak, Jr.; J. E. Baker; F. A. Kish; J. M. Dallesasse

Appl. Phys. Lett. 58, 1199–1201 (1991) https://doi.org/10.1063/1.105213

Abstract

View articletitled, Native oxide stabilization of AlAs‐GaAs heterostructures

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Critical current density enhancement in YBa₂Cu₃O_6.8 films on buffered metallic substrates

E. Narumi; L. W. Song; F. Yang; S. Patel; Y. H. Kao; D. T. Shaw

Appl. Phys. Lett. 58, 1202–1204 (1991) https://doi.org/10.1063/1.104364

Abstract

View articletitled, Critical current density enhancement in YBa2Cu3O6.8 films on buffered metallic substrates

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Magnetic field dependence of the critical current anisotropy in normal metal‐YBa₂Cu₃O_7−δ thin‐film bilayers

R. H. Ono; L. F. Goodrich; J. A. Beall; M. E. Johansson; C. D. Reintsema

Appl. Phys. Lett. 58, 1205–1207 (1991) https://doi.org/10.1063/1.104365

Abstract

View articletitled, Magnetic field dependence of the critical current anisotropy in normal metal‐YBa2Cu3O7−δ thin‐film bilayers

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Modeling superconductor degradation using magnetic levitation

M. A. Sriram; Laura Ponce; L. E. Murr

Appl. Phys. Lett. 58, 1208–1210 (1991) https://doi.org/10.1063/1.104366

Abstract

View articletitled, Modeling superconductor degradation using magnetic levitation

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Laser deposition of YBa₂Cu₃O_7−δ films using a pulsed oxygen source

A. Gupta; B. W. Hussey

Appl. Phys. Lett. 58, 1211–1213 (1991) https://doi.org/10.1063/1.104367

Abstract

View articletitled, Laser deposition of YBa2Cu3O7−δ films using a pulsed oxygen source

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Elementary formula for the magneto‐optic Kerr effect from model superlattices

J. Zak; E. R. Moog; C. Liu; S. D. Bader

Appl. Phys. Lett. 58, 1214–1216 (1991) https://doi.org/10.1063/1.104368

Abstract

View articletitled, Elementary formula for the magneto‐optic Kerr effect from model superlattices

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Some photoeffect roles in rapid isothermal processing

R. Singh; S. Sinha; R. P. S. Thakur; P. Chou

Appl. Phys. Lett. 58, 1217–1219 (1991) https://doi.org/10.1063/1.104369

Abstract

View articletitled, Some photoeffect roles in rapid isothermal processing

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