Skip Nav Destination

Issues

Select Decade

Select Year

Issue

Volume 57, Issue 18

29 October 1990

All Issues

ISSN 0003-6951

EISSN 1077-3118

Intensity noise in the ultrahigh efficiency tandem‐contact quantum well lasers

Dragan Gajić; Kam Y. Lau

Appl. Phys. Lett. 57, 1837–1839 (1990) https://doi.org/10.1063/1.104032

Abstract

View articletitled, Intensity noise in the ultrahigh efficiency tandem‐contact quantum well lasers

Open the PDF for in another window

GaInAs/GaAs thermally actuated optical switch

L. D. Partain; J. C. Schultz; G. F. Virshup; M. Ladle Ristow

Appl. Phys. Lett. 57, 1840–1842 (1990) https://doi.org/10.1063/1.104033

Abstract

View articletitled, GaInAs/GaAs thermally actuated optical switch

Open the PDF for in another window

33 ps optical switching of symmetric self‐electro‐optic effect devices

G. D. Boyd; A. M. Fox; D. A. B. Miller; L. M. F. Chirovsky; L. A. D’Asaro; J. M. Kuo; R. F. Kopf; A. L. Lentine

Appl. Phys. Lett. 57, 1843–1845 (1990) https://doi.org/10.1063/1.104034

Abstract

View articletitled, 33 ps optical switching of symmetric self‐electro‐optic effect devices

Open the PDF for in another window

All‐optical switching of picosecond pulses in a GaAs quantum well waveguide coupler

P. LiKamWa; A. Miller; C. B. Park; J. S. Roberts; P. N. Robson

Appl. Phys. Lett. 57, 1846–1848 (1990) https://doi.org/10.1063/1.104035

Abstract

View articletitled, All‐optical switching of picosecond pulses in a GaAs quantum well waveguide coupler

Open the PDF for in another window

External‐beam switching in monolithic bistable GaAs quantum well étalons

B. G. Sfez; J. L. Oudar; J. C. Michel; R. Kuszelewicz; R. Azoulay

Appl. Phys. Lett. 57, 1849–1851 (1990) https://doi.org/10.1063/1.104036

Abstract

View articletitled, External‐beam switching in monolithic bistable GaAs quantum well étalons

Open the PDF for in another window

Surface‐stabilized ferroelectric liquid‐crystal electro‐optic waveguide switch

Noel A. Clark; Mark A. Handschy

Appl. Phys. Lett. 57, 1852–1854 (1990) https://doi.org/10.1063/1.104037

Abstract

View articletitled, Surface‐stabilized ferroelectric liquid‐crystal electro‐optic waveguide switch

Open the PDF for in another window

High‐power cw vertical‐cavity top surface‐emitting GaAs quantum well lasers

B. Tell; Y. H. Lee; K. F. Brown‐Goebeler; J. L. Jewell; R. E. Leibenguth; M. T. Asom; G. Livescu; L. Luther; V. D. Mattera

Appl. Phys. Lett. 57, 1855–1857 (1990) https://doi.org/10.1063/1.104038

Abstract

View articletitled, High‐power cw vertical‐cavity top surface‐emitting GaAs quantum well lasers

Open the PDF for in another window

Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs‐GaAs quantum well

T. J. Rogers; D. G. Deppe; B. G. Streetman

Appl. Phys. Lett. 57, 1858–1860 (1990) https://doi.org/10.1063/1.104120

Abstract

View articletitled, Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs‐GaAs quantum well

Open the PDF for in another window

5 W GaAs/GaAlAs laser diodes with a reactive ion etched facet

S. S. Ou; J. J. Yang; M. Jansen

Appl. Phys. Lett. 57, 1861–1863 (1990) https://doi.org/10.1063/1.104039

Abstract

View articletitled, 5 W GaAs/GaAlAs laser diodes with a reactive ion etched facet

Open the PDF for in another window

Buried‐heterostructure lasers fabricated by in situ processing techniques

Y. L. Wang; H. Temkin; L. R. Harriott; R. A. Logan; T. Tanbun‐Ek

Appl. Phys. Lett. 57, 1864–1866 (1990) https://doi.org/10.1063/1.104042

Abstract

View articletitled, Buried‐heterostructure lasers fabricated by in situ processing techniques

Open the PDF for in another window

Surface acoustic wave response to changes in viscoelastic film properties

S. J. Martin; G. C. Frye

Appl. Phys. Lett. 57, 1867–1869 (1990) https://doi.org/10.1063/1.104043

Abstract

View articletitled, Surface acoustic wave response to changes in viscoelastic film properties

Open the PDF for in another window

Scanning electron acoustic microscopy of indentation‐induced cracks and residual stresses in ceramics

John H. Cantrell; Menglu Qian; M. V. Ravichandran; K. M. Knowles

Appl. Phys. Lett. 57, 1870–1872 (1990) https://doi.org/10.1063/1.104019

Abstract

View articletitled, Scanning electron acoustic microscopy of indentation‐induced cracks and residual stresses in ceramics

Open the PDF for in another window

Wide area disk‐shaped vacuum ultraviolet lamp

Z. Yu; T. Y. Sheng; Z. Luo; G. J. Collins

Appl. Phys. Lett. 57, 1873–1875 (1990) https://doi.org/10.1063/1.104020

Abstract

View articletitled, Wide area disk‐shaped vacuum ultraviolet lamp

Open the PDF for in another window

Particle trapping phenomena in radio frequency plasmas

Gary S. Selwyn; John E. Heidenreich; Kurt L. Haller

Appl. Phys. Lett. 57, 1876–1878 (1990) https://doi.org/10.1063/1.104021

Abstract

View articletitled, Particle trapping phenomena in radio frequency plasmas

Open the PDF for in another window

Growth of highly oriented tin oxide thin films by laser evaporation deposition

C. M. Dai; C. S. Su; D. S. Chuu

Appl. Phys. Lett. 57, 1879–1881 (1990) https://doi.org/10.1063/1.103998

Abstract

View articletitled, Growth of highly oriented tin oxide thin films by laser evaporation deposition

Open the PDF for in another window

Quantitative theory for laser ultrasonic waves in a thin plate

J. B. Spicer; A. D. W. McKie; J. W. Wagner

Appl. Phys. Lett. 57, 1882–1884 (1990) https://doi.org/10.1063/1.103999

Abstract

View articletitled, Quantitative theory for laser ultrasonic waves in a thin plate

Open the PDF for in another window

Cubic boron nitride films deposited by electron cyclotron resonance plasma

S. Y. Shapoval; V. T. Petrashov; O. A. Popov; A. O. Westner; M. D. Yoder, Jr.; C. K. C. Lok

Appl. Phys. Lett. 57, 1885–1886 (1990) https://doi.org/10.1063/1.104000

Abstract

View articletitled, Cubic boron nitride films deposited by electron cyclotron resonance plasma

Open the PDF for in another window

Delta‐doped quantum well structures grown by molecular beam epitaxy

D. G. Liu; C. P. Lee; K. H. Chang; J. S. Wu; D. C. Liou

Appl. Phys. Lett. 57, 1887–1888 (1990) https://doi.org/10.1063/1.104001

Abstract

View articletitled, Delta‐doped quantum well structures grown by molecular beam epitaxy

Open the PDF for in another window

Intrinsic and extrinsic recombination radiation from undoped and boron‐doped diamonds formed by plasma chemical vapor deposition

H. Kawarada; Y. Yokota; A. Hiraki

Appl. Phys. Lett. 57, 1889–1891 (1990) https://doi.org/10.1063/1.104002

Abstract

View articletitled, Intrinsic and extrinsic recombination radiation from undoped and boron‐doped diamonds formed by plasma chemical vapor deposition

Open the PDF for in another window

Effect of oxygen‐implant isolation on the recombination leakage current of n‐p⁺ AlGaAs graded heterojunction diodes

Kazuo Watanabe; Koichi Nagata; Hajime Yamazaki; Satoru Ishida; Takehisa Ichijo

Appl. Phys. Lett. 57, 1892–1894 (1990) https://doi.org/10.1063/1.104003

Abstract

View articletitled, Effect of oxygen‐implant isolation on the recombination leakage current of n‐p+ AlGaAs graded heterojunction diodes

Open the PDF for in another window

InGaAs/InAlAs superlattice avalanche photodiode with a separated photoabsorption layer

Toshiaki Kagawa; Yuichi Kawamura; Hiromitsu Asai; Mitsuru Naganuma

Appl. Phys. Lett. 57, 1895–1897 (1990) https://doi.org/10.1063/1.104004

Abstract

View articletitled, InGaAs/InAlAs superlattice avalanche photodiode with a separated photoabsorption layer

Open the PDF for in another window

Charge‐state‐dependent iron precipitation in silicon

A. Mesli; T. Heiser; N. Amroun; P. Siffert

Appl. Phys. Lett. 57, 1898–1900 (1990) https://doi.org/10.1063/1.104005

Abstract

View articletitled, Charge‐state‐dependent iron precipitation in silicon

Open the PDF for in another window

ZnSe light‐emitting diodes

J. Ren; K. A. Bowers; B. Sneed; D. L. Dreifus; J. W. Cook, Jr.; J. F. Schetzina; R. M. Kolbas

Appl. Phys. Lett. 57, 1901–1903 (1990) https://doi.org/10.1063/1.104006

Abstract

View articletitled, ZnSe light‐emitting diodes

Open the PDF for in another window

Improvement of electrical characteristics of polycrystalline silicon‐contacted diodes after forward bias stressing

S. L. Wu; C. L. Lee; T. F. Lei

Appl. Phys. Lett. 57, 1904–1906 (1990) https://doi.org/10.1063/1.104007

Abstract

View articletitled, Improvement of electrical characteristics of polycrystalline silicon‐contacted diodes after forward bias stressing

Open the PDF for in another window

Lithium doping and photoemission of diamond thin films

K. Okumura; J. Mort; M. Machonkin

Appl. Phys. Lett. 57, 1907–1909 (1990) https://doi.org/10.1063/1.104008

Abstract

View articletitled, Lithium doping and photoemission of diamond thin films

Open the PDF for in another window

Differential reflectance spectroscopy of InGaAs/GaAs and AlGaAs/GaAs quantum wells

C. Shwe; M. Gal

Appl. Phys. Lett. 57, 1910–1912 (1990) https://doi.org/10.1063/1.104009

Abstract

View articletitled, Differential reflectance spectroscopy of InGaAs/GaAs and AlGaAs/GaAs quantum wells

Open the PDF for in another window

Hole trap level in Pt‐Ti/p‐InGaAs/n‐InP heterostructures due to rapid thermal processing

K. L. Jiao; A. J. Soltyka; W. A. Anderson; A. Katz

Appl. Phys. Lett. 57, 1913–1915 (1990) https://doi.org/10.1063/1.104010

Abstract

View articletitled, Hole trap level in Pt‐Ti/p‐InGaAs/n‐InP heterostructures due to rapid thermal processing

Open the PDF for in another window

Vapor deposition of diamond thin films on various substrates

Y. H. Lee; K. J. Bachmann; J. T. Glass; Y. M. LeGrice; R. J. Nemanich

Appl. Phys. Lett. 57, 1916–1918 (1990) https://doi.org/10.1063/1.104011

Abstract

View articletitled, Vapor deposition of diamond thin films on various substrates

Open the PDF for in another window

Accumulation capacitance for GaAs‐SiO₂ interfaces with Si interlayers

J. L. Freeouf; D. A. Buchanan; S. L. Wright; T. N. Jackson; B. Robinson

Appl. Phys. Lett. 57, 1919–1921 (1990) https://doi.org/10.1063/1.104012

Abstract

View articletitled, Accumulation capacitance for GaAs‐SiO2 interfaces with Si interlayers

Open the PDF for in another window

Effect of growth rate on the band gap of Ga_0.5In_0.5P

Sarah R. Kurtz; J. M. Olson; A. Kibbler

Appl. Phys. Lett. 57, 1922–1924 (1990) https://doi.org/10.1063/1.104013

Abstract

View articletitled, Effect of growth rate on the band gap of Ga0.5In0.5P

Open the PDF for in another window

Near‐band‐gap photoluminescence of Si_1−xGe_x alloys grown on Si(100) by molecular beam epitaxy

Koichi Terashima; Michio Tajima; Toru Tatsumi

Appl. Phys. Lett. 57, 1925–1927 (1990) https://doi.org/10.1063/1.104014

Abstract

View articletitled, Near‐band‐gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy

Open the PDF for in another window

Critical currents of superconducting BiPbSrCaCuO tapes in the magnetic flux density range 0–19.75 T at 4.2, 15, and 20 K

K. Sato; T. Hikata; Y. Iwasa

Appl. Phys. Lett. 57, 1928–1929 (1990) https://doi.org/10.1063/1.104146

Abstract

View articletitled, Critical currents of superconducting BiPbSrCaCuO tapes in the magnetic flux density range 0–19.75 T at 4.2, 15, and 20 K

Open the PDF for in another window

Superconducting thin‐film flux transformers of YBa₂Cu₃O_7−x

F. C. Wellstood; J. J. Kingston; M. J. Ferrari; J. Clarke

Appl. Phys. Lett. 57, 1930–1932 (1990) https://doi.org/10.1063/1.104015

Abstract

View articletitled, Superconducting thin‐film flux transformers of YBa2Cu3O7−x

Open the PDF for in another window

Nb/Al‐AlO_x/Nb superconductor detector using a single‐crystal Nb layer

Masahiko Kurakado; Toru Takahashi; Atsuki Matsumura

Appl. Phys. Lett. 57, 1933–1935 (1990) https://doi.org/10.1063/1.104016

Abstract

View articletitled, Nb/Al‐AlOx/Nb superconductor detector using a single‐crystal Nb layer

Open the PDF for in another window

Role of atomic oxygen produced by an electron cyclotron resonance plasma in the oxidation of YBa₂Cu₃O_7−x thin films studied by in situ resistivity measurement

K. Yamamoto; B. M. Lairson; C. B. Eom; R. H. Hammond; J. C. Bravman; T. H. Geballe

Appl. Phys. Lett. 57, 1936–1938 (1990) https://doi.org/10.1063/1.104147

Abstract

View articletitled, Role of atomic oxygen produced by an electron cyclotron resonance plasma in the oxidation of YBa2Cu3O7−x thin films studied by in situ resistivity measurement

Open the PDF for in another window

Submit your article

Sign up for alerts

RSS

Current Issue RSS Feed

Open Issues RSS Feed

Most Read
Most Cited

Roadmap on photonic metasurfaces

Sebastian A. Schulz, Rupert. F. Oulton, et al.

Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures

Tomoya Okuda, Shunsuke Ota, et al.

Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials

Christina M. Rost, Alessandro R. Mazza, et al.

Issues

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only