Skip Nav Destination
Issues
Miniaturized total‐reflection ferroelectric liquid‐crystal electro‐optic switch
Appl. Phys. Lett. 57, 1479–1481 (1990)
https://doi.org/10.1063/1.103369
Spontaneous recombination current in InGaAs/GaAs quantum well lasers
Appl. Phys. Lett. 57, 1482–1484 (1990)
https://doi.org/10.1063/1.103370
Detection of a stimulated emission process as an inverse thermal lens signal
Appl. Phys. Lett. 57, 1485–1487 (1990)
https://doi.org/10.1063/1.103371
Measurement of nonlinear properties in Ag‐ion exchange waveguides using degenerate four‐wave mixing
Appl. Phys. Lett. 57, 1488–1490 (1990)
https://doi.org/10.1063/1.103372
Optimization of modulation ratio and insertion loss in reflective electroabsorption modulators
Appl. Phys. Lett. 57, 1491–1492 (1990)
https://doi.org/10.1063/1.103373
Continuously graded‐index separate confinement heterostructure multiquantum well Ga1−xInxAs1−yPy/InP ridge waveguide lasers grown by low‐pressure metalorganic chemical vapor deposition with lattice‐matched quaternary wells and barriers
Appl. Phys. Lett. 57, 1493–1495 (1990)
https://doi.org/10.1063/1.103374
Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)
Appl. Phys. Lett. 57, 1496–1498 (1990)
https://doi.org/10.1063/1.103375
In situ time‐resolved reflectivity measurements of Al under excimer laser planarization conditions
Appl. Phys. Lett. 57, 1499–1501 (1990)
https://doi.org/10.1063/1.103376
Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition
R. Ramesh; K. Luther; B. Wilkens; D. L. Hart; E. Wang; J. M. Tarascon; A. Inam; X. D. Wu; T. Venkatesan
Appl. Phys. Lett. 57, 1505–1507 (1990)
https://doi.org/10.1063/1.104128
Optical determination of oxygen outdiffusion in epitaxial silicon grown on n‐type Czochralski substrates
Appl. Phys. Lett. 57, 1511–1513 (1990)
https://doi.org/10.1063/1.103379
Effect of cathode spacer layer on the current‐voltage characteristics of resonant tunneling diodes
Appl. Phys. Lett. 57, 1517–1519 (1990)
https://doi.org/10.1063/1.103381
Ultrafast optical nonlinearities of type II AlxGa1−xAs/AlAs multiple quantum wells
Appl. Phys. Lett. 57, 1520–1522 (1990)
https://doi.org/10.1063/1.103382
Optical detection of biatomic sheets of silicon in Si/Ge superlattices
Appl. Phys. Lett. 57, 1523–1525 (1990)
https://doi.org/10.1063/1.104092
Cathodoluminescence study of the damage induced by low‐energy boron implantation using a chemical bevel
Appl. Phys. Lett. 57, 1526–1527 (1990)
https://doi.org/10.1063/1.103341
Light‐induced defect studies in hydrogenated amorphous silicon by exoelectron emission
Appl. Phys. Lett. 57, 1528–1530 (1990)
https://doi.org/10.1063/1.103342
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
Appl. Phys. Lett. 57, 1531–1533 (1990)
https://doi.org/10.1063/1.103343
Improved contacts to semi‐insulating GaAs photoconductive switches using a graded layer of InGaAs
Appl. Phys. Lett. 57, 1534–1536 (1990)
https://doi.org/10.1063/1.103344
Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band
Appl. Phys. Lett. 57, 1537–1539 (1990)
https://doi.org/10.1063/1.103345
Deposition of SiC films by pulsed excimer laser ablation
Appl. Phys. Lett. 57, 1540–1542 (1990)
https://doi.org/10.1063/1.103346
Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP
Appl. Phys. Lett. 57, 1543–1545 (1990)
https://doi.org/10.1063/1.103347
Deep levels in Te‐doped AlSb grown by molecular beam epitaxy
Appl. Phys. Lett. 57, 1551–1553 (1990)
https://doi.org/10.1063/1.103350
Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
Appl. Phys. Lett. 57, 1554–1556 (1990)
https://doi.org/10.1063/1.103351
Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers
Appl. Phys. Lett. 57, 1557–1559 (1990)
https://doi.org/10.1063/1.103352
Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld and
Appl. Phys. Lett. 57, 1563–1565 (1990)
https://doi.org/10.1063/1.103354
Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P
Appl. Phys. Lett. 57, 1566–1568 (1990)
https://doi.org/10.1063/1.103355
Type II broken‐gap quantum wires and quantum dot arrays: A novel concept for self‐doping semiconductor nanostructures
Appl. Phys. Lett. 57, 1569–1571 (1990)
https://doi.org/10.1063/1.103356
Radiative recombination in surface‐free n+/n−/n+GaAs homostructures
Appl. Phys. Lett. 57, 1572–1574 (1990)
https://doi.org/10.1063/1.103357
Anisotropy and intergrain current density in oriented grained bulk YBa2Cu3Ox superconductor
Appl. Phys. Lett. 57, 1575–1577 (1990)
https://doi.org/10.1063/1.104129
rf plasma aerosol deposition of superconductive Y1Ba2Cu3O7−δ films at atmospheric pressure
Appl. Phys. Lett. 57, 1581–1583 (1990)
https://doi.org/10.1063/1.104130
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.