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Buried‐ridge striped planar GaAlAs/GaAs lasers with a wide range of effective index steps
Appl. Phys. Lett. 56, 599–601 (1990)
https://doi.org/10.1063/1.102732
All‐optical tuning of waveguide nonlinear distributed feedback gratings
Appl. Phys. Lett. 56, 602–604 (1990)
https://doi.org/10.1063/1.102710
Electro‐optical multistability in GaAs/AlAs superlattices at room temperature
Appl. Phys. Lett. 56, 605–607 (1990)
https://doi.org/10.1063/1.102711
Nd:CaYAlO4—a new crystal for solid‐state lasers emitting at 1.08 μm
Appl. Phys. Lett. 56, 608–610 (1990)
https://doi.org/10.1063/1.102712
Bias‐controlled chemical vapor deposition of diamond thin films
Appl. Phys. Lett. 56, 620–622 (1990)
https://doi.org/10.1063/1.102716
A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
Appl. Phys. Lett. 56, 623–625 (1990)
https://doi.org/10.1063/1.102717
Stimulated emission from monolayer‐thick AlxGa1−xAs‐GaAs single quantum well heterostructures
Appl. Phys. Lett. 56, 626–628 (1990)
https://doi.org/10.1063/1.102718
Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor
Appl. Phys. Lett. 56, 629–631 (1990)
https://doi.org/10.1063/1.102719
Electron‐hole transition energies and atomic steps at the interfaces of thin InGaAs/InP quantum wells
Appl. Phys. Lett. 56, 632–634 (1990)
https://doi.org/10.1063/1.102720
Silicon etching with oxygen molecular beam assisted by predeposited germanium
Appl. Phys. Lett. 56, 635–637 (1990)
https://doi.org/10.1063/1.102721
Dark current and diffusion length in InGaAs photodiodes grown on GaAs substrates
Appl. Phys. Lett. 56, 644–646 (1990)
https://doi.org/10.1063/1.102724
Quantitative, all‐optical prediction of the carrier density in semi‐insulating GaAs
Appl. Phys. Lett. 56, 647–649 (1990)
https://doi.org/10.1063/1.102725
Ideal hydrogen termination of the Si (111) surface
Appl. Phys. Lett. 56, 656–658 (1990)
https://doi.org/10.1063/1.102728
Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
Appl. Phys. Lett. 56, 659–661 (1990)
https://doi.org/10.1063/1.102729
Electronic analog of the electro‐optic modulator
In Special Collection:
APL Classic Papers
Appl. Phys. Lett. 56, 665–667 (1990)
https://doi.org/10.1063/1.102730
Reaction and stability of metal/silicide interfaces: Ti/MoSi2 (001)
J. P. Sullivan; Toshiyuki Hirano; T. Komeda; H. M. Meyer, III; B. M. Trafas; G. D. Waddill; J. H. Weaver
Appl. Phys. Lett. 56, 671–673 (1990)
https://doi.org/10.1063/1.103308
Quasi‐epitaxial growth of organic multiple quantum well structures by organic molecular beam deposition
Appl. Phys. Lett. 56, 674–676 (1990)
https://doi.org/10.1063/1.102733
In situ growth of superconducting Nd‐Ce‐Cu‐O thin films
Appl. Phys. Lett. 56, 677–679 (1990)
https://doi.org/10.1063/1.103309
Flux creep characteristics in high‐temperature superconductors
Appl. Phys. Lett. 56, 680–682 (1990)
https://doi.org/10.1063/1.103310
Tunneling measurements on superconductor/insulator/superconductor junctions using single‐crystal YBa2Cu3O7−x thin films
Appl. Phys. Lett. 56, 683–685 (1990)
https://doi.org/10.1063/1.103311
All high Tc edge junctions and SQUIDs
R. B. Laibowitz; R. H. Koch; A. Gupta; G. Koren; W. J. Gallagher; V. Foglietti; B. Oh; J. M. Viggiano
Appl. Phys. Lett. 56, 686–688 (1990)
https://doi.org/10.1063/1.102706
Emission of electrons on switching of the Gd2(MoO4)3 ferroelectric‐ferroelastic in electric field
Appl. Phys. Lett. 56, 689–691 (1990)
https://doi.org/10.1063/1.103312
The 193 nm fragmentation and ionization of trimethylaluminum: Evidence for photoinduced α‐hydrogen elimination
Appl. Phys. Lett. 56, 695–697 (1990)
https://doi.org/10.1063/1.102686
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.