Skip Nav Destination
Issues
Pump wavelength dependence of the gain factor in 1.48 μm pumped Er3+‐doped fiber amplifiers
Appl. Phys. Lett. 56, 1611–1613 (1990)
https://doi.org/10.1063/1.103141
Continuous‐wave operation and mirror loss of a U‐shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors
Appl. Phys. Lett. 56, 1617–1619 (1990)
https://doi.org/10.1063/1.103143
Purely gain‐coupled distributed feedback semiconductor lasers
Appl. Phys. Lett. 56, 1620–1622 (1990)
https://doi.org/10.1063/1.103144
Properties of closely spaced independently addressable lasers fabricated by impurity‐induced disordering
Appl. Phys. Lett. 56, 1623–1625 (1990)
https://doi.org/10.1063/1.103145
Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry–Perot structures
Appl. Phys. Lett. 56, 1626–1628 (1990)
https://doi.org/10.1063/1.103146
Large‐signal picosecond response of InGaAs/InP quantum well lasers with an intracavity loss modulator
Appl. Phys. Lett. 56, 1629–1631 (1990)
https://doi.org/10.1063/1.103147
Contribution of second‐harmonic generation to the creation of free carriers in CdTe single crystals
Appl. Phys. Lett. 56, 1632–1634 (1990)
https://doi.org/10.1063/1.103148
Diode‐pumped single‐mode fluorozirconate fiber laser from the 4I11/2→4I13/2 transition in erbium
Appl. Phys. Lett. 56, 1635–1637 (1990)
https://doi.org/10.1063/1.103149
Approximate theory of highly absorbing polymer ablation by nanosecond laser pulses
Appl. Phys. Lett. 56, 1638–1640 (1990)
https://doi.org/10.1063/1.103150
1.5 μm GaInAsP/InP buried‐heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen
Appl. Phys. Lett. 56, 1641–1642 (1990)
https://doi.org/10.1063/1.103151
Radioactive metal tracer investigation of Pd2Si formation
Appl. Phys. Lett. 56, 1643–1645 (1990)
https://doi.org/10.1063/1.103219
Proximity effect for scrolling spatial light modulator applications of surface‐stabilized ferroelectric liquid‐crystal switching
Appl. Phys. Lett. 56, 1646–1648 (1990)
https://doi.org/10.1063/1.103197
Light scattering determination of subband structure and population of modulation‐doped multiple quantum wells
Appl. Phys. Lett. 56, 1649–1651 (1990)
https://doi.org/10.1063/1.103130
Theoretical explanation of the control of the Schottky barrier height using an ultrathin interface metal layer
Appl. Phys. Lett. 56, 1652–1654 (1990)
https://doi.org/10.1063/1.103131
Two pseudobinary semiconducting silicides: RexMo1−xSi2 and CrxV1−xSi2
Appl. Phys. Lett. 56, 1655–1657 (1990)
https://doi.org/10.1063/1.103132
Orientation‐dependent perimeter recombination in GaAs diodes
Appl. Phys. Lett. 56, 1658–1660 (1990)
https://doi.org/10.1063/1.103108
Identification of silicon nitride/InGaAs interface states
Appl. Phys. Lett. 56, 1661–1663 (1990)
https://doi.org/10.1063/1.103109
Achievement of high gain in a multiple quantum channel lateral heterojunction bipolar transistor
Appl. Phys. Lett. 56, 1670–1672 (1990)
https://doi.org/10.1063/1.103112
Exchange interaction effects in quantum well infrared detectors and absorbers
Appl. Phys. Lett. 56, 1679–1681 (1990)
https://doi.org/10.1063/1.103115
Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films
Appl. Phys. Lett. 56, 1685–1687 (1990)
https://doi.org/10.1063/1.103117
Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3
Appl. Phys. Lett. 56, 1688–1690 (1990)
https://doi.org/10.1063/1.103118
Optical and electronic properties of doped silicon from 0.1 to 2 THz
Appl. Phys. Lett. 56, 1694–1696 (1990)
https://doi.org/10.1063/1.103120
Formation of a high quality two‐dimensional electron gas on cleaved GaAs
Appl. Phys. Lett. 56, 1697–1699 (1990)
https://doi.org/10.1063/1.103121
Flux creep in Bi2Sr2CaCu2O8 epitaxial films
Appl. Phys. Lett. 56, 1700–1702 (1990)
https://doi.org/10.1063/1.103220
Microwave imaging by a moment‐method solution to two‐dimensional inverse scattering: Preliminary experimental results
Appl. Phys. Lett. 56, 1706–1707 (1990)
https://doi.org/10.1063/1.103123
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.