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Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser
Appl. Phys. Lett. 56, 1391–1393 (1990)
https://doi.org/10.1063/1.102477
Role of color center induced absorption in all‐optical switching
Appl. Phys. Lett. 56, 1394–1396 (1990)
https://doi.org/10.1063/1.102478
Mode selection and spatial hole burning suppression of a chirped grating distributed feedback laser
Appl. Phys. Lett. 56, 1400–1402 (1990)
https://doi.org/10.1063/1.102480
Measurement of the nonlinear refractive index of single‐crystal polydiacetylene channel waveguides
Appl. Phys. Lett. 56, 1406–1408 (1990)
https://doi.org/10.1063/1.102482
Single quantum well laser with vertically integrated passive waveguides
Appl. Phys. Lett. 56, 1409–1411 (1990)
https://doi.org/10.1063/1.102483
Minimum fluence for laser blow‐off of thin gold films at 248 and 532 nm
Appl. Phys. Lett. 56, 1412–1414 (1990)
https://doi.org/10.1063/1.102484
Active mode locking of lasers by piezoelectrically induced diffraction modulation
Appl. Phys. Lett. 56, 1415–1417 (1990)
https://doi.org/10.1063/1.102485
Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices
Appl. Phys. Lett. 56, 1418–1420 (1990)
https://doi.org/10.1063/1.102486
Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar
Appl. Phys. Lett. 56, 1424–1426 (1990)
https://doi.org/10.1063/1.102487
Doping effects on intersubband absorption in InGaAs/InAlAs multiquantum wells
Appl. Phys. Lett. 56, 1427–1429 (1990)
https://doi.org/10.1063/1.102488
Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 56, 1433–1435 (1990)
https://doi.org/10.1063/1.102489
Selective dry etching of silicon with respect to germanium
Appl. Phys. Lett. 56, 1436–1438 (1990)
https://doi.org/10.1063/1.102490
High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine
Appl. Phys. Lett. 56, 1439–1441 (1990)
https://doi.org/10.1063/1.102491
Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers
J. A. Powell; D. J. Larkin; L. G. Matus; W. J. Choyke; J. L. Bradshaw; L. Henderson; M. Yoganathan; J. Yang; P. Pirouz
Appl. Phys. Lett. 56, 1442–1444 (1990)
https://doi.org/10.1063/1.102492
Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition
Appl. Phys. Lett. 56, 1445–1447 (1990)
https://doi.org/10.1063/1.102493
Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine
Appl. Phys. Lett. 56, 1448–1450 (1990)
https://doi.org/10.1063/1.102494
Injection and drift of a positively charged hydrogen species in p‐type GaAs
Appl. Phys. Lett. 56, 1457–1459 (1990)
https://doi.org/10.1063/1.102497
Base doping limits in heterostructure bipolar transistors
Appl. Phys. Lett. 56, 1460–1462 (1990)
https://doi.org/10.1063/1.102498
Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy
Appl. Phys. Lett. 56, 1463–1465 (1990)
https://doi.org/10.1063/1.102499
Selective and stoichiometric reaction of copper dipivaloylmethanate [Cu(DPM)2] with surface hydroxyls on SiO2
Appl. Phys. Lett. 56, 1466–1468 (1990)
https://doi.org/10.1063/1.102500
Fabrication of thin‐film‐type Josephson junctions using a Bi‐Sr‐Ca‐Cu‐O /Bi‐Sr‐Cu‐O/Bi‐Sr‐Ca‐Cu‐O structure
Appl. Phys. Lett. 56, 1469–1471 (1990)
https://doi.org/10.1063/1.103173
Characterization of the KrF laser‐induced plasma plume created above a BiSrCaCuO target
Appl. Phys. Lett. 56, 1472–1474 (1990)
https://doi.org/10.1063/1.103155
Persistent magnetic fields trapped in high Tc superconductor
Appl. Phys. Lett. 56, 1475–1477 (1990)
https://doi.org/10.1063/1.103207
Electrical properties of the interface between YBa2Cu3Ox films and various substrates
Appl. Phys. Lett. 56, 1478–1480 (1990)
https://doi.org/10.1063/1.103208
Effect of deposition rate on properties of YBa2Cu3O7−δ superconducting thin films
X. D. Wu; R. E. Muenchausen; S. Foltyn; R. C. Estler; R. C. Dye; C. Flamme; N. S. Nogar; A. R. Garcia; J. Martin; J. Tesmer
Appl. Phys. Lett. 56, 1481–1483 (1990)
https://doi.org/10.1063/1.103209
Anisotropic Josephson junctions of Y‐Ba‐Cu‐O/Au/Nb film sandwiches
Appl. Phys. Lett. 56, 1487–1489 (1990)
https://doi.org/10.1063/1.103156
Strong flux pinning centers in Y‐Ba‐Cu‐O films prepared by chemical vapor deposition
K. Watanabe; T. Matsushita; N. Kobayashi; H. Kawabe; E. Aoyagi; K. Hiraga; H. Yamane; H. Kurosawa; T. Hirai; Y. Muto
Appl. Phys. Lett. 56, 1490–1492 (1990)
https://doi.org/10.1063/1.103211
Noise and dc characteristics of thin‐film Bi‐Sr‐Ca‐Cu‐oxide dc SQUIDs
Appl. Phys. Lett. 56, 1493–1495 (1990)
https://doi.org/10.1063/1.103157
Sputtered BiPbSrCaCuO films on polycrystalline CuO substrates
Appl. Phys. Lett. 56, 1496–1497 (1990)
https://doi.org/10.1063/1.103212
Electronic transitions in a SimGen strained monolayer superlattice measured by photoreflectance
Appl. Phys. Lett. 56, 1498–1500 (1990)
https://doi.org/10.1063/1.103158
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.