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Organic electroluminescent device having a hole conductor as an emitting layer
Appl. Phys. Lett. 55, 1489–1491 (1989)
https://doi.org/10.1063/1.101586
Efficient fiber coupling to low‐loss diluted multiple quantum well optical waveguides
Appl. Phys. Lett. 55, 1495–1497 (1989)
https://doi.org/10.1063/1.101588
Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers
Appl. Phys. Lett. 55, 1501–1503 (1989)
https://doi.org/10.1063/1.101590
Amorphous phase formation by solid‐state reaction between polycrystalline Co thin films and single‐crystal GaAs
Appl. Phys. Lett. 55, 1510–1512 (1989)
https://doi.org/10.1063/1.101591
Misfit accommodation in a lattice‐mismatched HgTe‐CdTe superlattice/HgCdTe heterostructure grown by molecular beam epitaxy
Appl. Phys. Lett. 55, 1513–1515 (1989)
https://doi.org/10.1063/1.101592
Homogeneous and interfacial heat releases in amorphous silicon
Appl. Phys. Lett. 55, 1516–1518 (1989)
https://doi.org/10.1063/1.101593
Microcrystallite size dependence of absorption and photoluminescence spectra in CdSxSe1−x‐doped glass
Appl. Phys. Lett. 55, 1519–1521 (1989)
https://doi.org/10.1063/1.102251
Chemical vapor deposition of single‐crystal films of cubic SiC on patterned Si substrates
Appl. Phys. Lett. 55, 1522–1524 (1989)
https://doi.org/10.1063/1.102252
Photoluminescence studies of Si (100) doped with low‐energy (≤1000 eV) As+ ions during molecular beam epitaxy
Appl. Phys. Lett. 55, 1525–1527 (1989)
https://doi.org/10.1063/1.102303
Photoluminescence and space‐charge distribution in a double‐barrier diode under operation
Appl. Phys. Lett. 55, 1528–1530 (1989)
https://doi.org/10.1063/1.102253
Antiphase domain boundary formation in single‐crystal chalcopyrite‐structure ZnGeAs2 grown on GaAs
Appl. Phys. Lett. 55, 1531–1533 (1989)
https://doi.org/10.1063/1.102304
Injection in a continuum miniband: Observation of negative transconductance in a superlattice‐base transistor
Appl. Phys. Lett. 55, 1534–1536 (1989)
https://doi.org/10.1063/1.102237
Porous silicon microstructure as studied by transmission electron microscopy
Appl. Phys. Lett. 55, 1540–1542 (1989)
https://doi.org/10.1063/1.102239
Zinc delta doping of GaAs by organometallic vapor phase epitaxy
Appl. Phys. Lett. 55, 1546–1548 (1989)
https://doi.org/10.1063/1.102240
Heteroepitaxial In0.1Ga0.9As metal‐semiconductor field‐effect transistors fabricated on GaAs and Si substrates
Appl. Phys. Lett. 55, 1552–1554 (1989)
https://doi.org/10.1063/1.102241
Resonant tunneling through X‐valley states in GaAs/AlAs/GaAs single‐barrier heterostructures
Appl. Phys. Lett. 55, 1555–1557 (1989)
https://doi.org/10.1063/1.102242
Photoluminescence and Raman studies of residual stresses in GaAs directly grown on InP
Appl. Phys. Lett. 55, 1558–1560 (1989)
https://doi.org/10.1063/1.102243
Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy
Appl. Phys. Lett. 55, 1561–1563 (1989)
https://doi.org/10.1063/1.102244
Barrier tuning by means of a quantum, interface‐induced dipole in a doping layer
Appl. Phys. Lett. 55, 1564–1566 (1989)
https://doi.org/10.1063/1.102245
Dislocations in In0.1Ga0.9As/GaAs multilayers epitaxially grown on Si substrates
Appl. Phys. Lett. 55, 1567–1568 (1989)
https://doi.org/10.1063/1.102246
Highly oriented Bi(Pb)‐Sr‐Ca‐Cu‐O superconducting thin films by magnetron sputtering of a single target
Appl. Phys. Lett. 55, 1569–1571 (1989)
https://doi.org/10.1063/1.102307
Glass‐derived superconducting ceramics with zero resistance at 107 K in the Bi1.5Pb0.5Sr2Ca2Cu3Ox system
Appl. Phys. Lett. 55, 1572–1574 (1989)
https://doi.org/10.1063/1.102308
Shock wave induced changes in superconductivity in YBa2Cu3O7−δ
Appl. Phys. Lett. 55, 1575–1577 (1989)
https://doi.org/10.1063/1.102309
Magnetic measurements of superconducting glass‐ceramic fine rods in Bi1Ca1Sr1Cu2Al0.5Ox prepared under a temperature gradient
Yutaka Higashida; Hisanori Yokoyama; Kazuo Michishita; Yukio Kubo; Hiroshi Yoshida; Yoshihiro Abe; Hideo Hosono
Appl. Phys. Lett. 55, 1578–1580 (1989)
https://doi.org/10.1063/1.102310
Superconducting properties of Ba2YCu3O7−x thin films prepared by chemical vapor deposition on SrTiO3 and a metal substrate
Appl. Phys. Lett. 55, 1581–1582 (1989)
https://doi.org/10.1063/1.102311
New high‐efficiency quasi‐continuous operation of an ArF(B→X) excimer lamp excited by microwave discharge
Appl. Phys. Lett. 55, 1583–1584 (1989)
https://doi.org/10.1063/1.102247
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Hard x-ray photoemission study of bulk single-crystalline InGaZnO4
Goro Shibata, Yunosuke Takahashi, et al.
Shining light in a heartbeat: Controlling cardiac bioelectricity with membrane-targeted photoswitches
Chiara Florindi, Giulia Simoncini, et al.