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Volume 54, Issue 8

20 February 1989

All Issues

ISSN 0003-6951

EISSN 1077-3118

Multifrequency room‐temperature continuous diode and Ar* laser‐pumped Er³⁺ laser emission between 2.66 and 2.85 μm

F. Auzel; S. Hubert; D. Meichenin

Appl. Phys. Lett. 54, 681–683 (1989) https://doi.org/10.1063/1.100885

Abstract

View articletitled, Multifrequency room‐temperature continuous diode and Ar* laser‐pumped Er3+ laser emission between 2.66 and 2.85 μm

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Photorefractive waveguides and nonlinear mode coupling effects

Baruch Fischer; Mordechai Segev

Appl. Phys. Lett. 54, 684–686 (1989) https://doi.org/10.1063/1.100886

Abstract

View articletitled, Photorefractive waveguides and nonlinear mode coupling effects

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Novel scalloped‐mirror diffraction‐coupled InGaAsP/InP buried‐heterostructure laser arrays

D. Yap; J. N. Walpole; Z. L. Liau

Appl. Phys. Lett. 54, 687–689 (1989) https://doi.org/10.1063/1.100864

Abstract

View articletitled, Novel scalloped‐mirror diffraction‐coupled InGaAsP/InP buried‐heterostructure laser arrays

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Generation of high‐power, high repetition rate, subpicosecond pulses by intracavity chirped pulse regenerative amplification

Li Yan; P.‐T. Ho; Chi H. Lee; G. L. Burdge

Appl. Phys. Lett. 54, 690–692 (1989) https://doi.org/10.1063/1.100865

Abstract

View articletitled, Generation of high‐power, high repetition rate, subpicosecond pulses by intracavity chirped pulse regenerative amplification

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Effects of amorphous silicon capping layer on arsenic redistribution during TiSi₂ formation

S. W. Kang; John S. Chun; S. C. Park

Appl. Phys. Lett. 54, 693–695 (1989) https://doi.org/10.1063/1.101468

Abstract

View articletitled, Effects of amorphous silicon capping layer on arsenic redistribution during TiSi2 formation

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Compensation of the temperature dependence of the optical characteristics of twisted nematic liquid‐crystal displays using a single chiral dopant

F. Leenhouts; S. Kelly; A. Villiger

Appl. Phys. Lett. 54, 696–697 (1989) https://doi.org/10.1063/1.101360

Abstract

View articletitled, Compensation of the temperature dependence of the optical characteristics of twisted nematic liquid‐crystal displays using a single chiral dopant

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Photoemission investigation of the room‐temperature adsorption of trimethylgallium on GaAs surface

Pierre Claverie; Kosuke Ueyama; Shigeru Maeda; Hidetoshi Namba; Haruo Kuroda

Appl. Phys. Lett. 54, 698–699 (1989) https://doi.org/10.1063/1.100866

Abstract

View articletitled, Photoemission investigation of the room‐temperature adsorption of trimethylgallium on GaAs surface

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Ga_1−xAl_xAs purification during its liquid phase epitaxial growth in the presence of Yb

J. Raczynska; K. Fronc; J. M. Langer; K. Lischka; A. Pesek

Appl. Phys. Lett. 54, 700–702 (1989) https://doi.org/10.1063/1.100867

Abstract

View articletitled, Ga1−xAlxAs purification during its liquid phase epitaxial growth in the presence of Yb

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Ion pairing effects on substitutional impurity diffusion in silicon

N. E. B. Cowern

Appl. Phys. Lett. 54, 703–705 (1989) https://doi.org/10.1063/1.100868

Abstract

View articletitled, Ion pairing effects on substitutional impurity diffusion in silicon

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Solid phase recrystallization in molecular beam deposited gallium arsenide

T. Kanata; H. Takakura; Y. Hamakawa

Appl. Phys. Lett. 54, 706–708 (1989) https://doi.org/10.1063/1.100869

Abstract

View articletitled, Solid phase recrystallization in molecular beam deposited gallium arsenide

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Heteroepitaxial growth of InN by microwave‐excited metalorganic vapor phase epitaxy

Akihiro Wakahara; Akira Yoshida

Appl. Phys. Lett. 54, 709–711 (1989) https://doi.org/10.1063/1.100870

Abstract

View articletitled, Heteroepitaxial growth of InN by microwave‐excited metalorganic vapor phase epitaxy

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Intracenter transitions in triply ionized erbium ions diffused into III‐V compound semiconductors

Xinwei Zhao; Kazuhiko Hirakawa; Toshiaki Ikoma

Appl. Phys. Lett. 54, 712–714 (1989) https://doi.org/10.1063/1.100871

Abstract

View articletitled, Intracenter transitions in triply ionized erbium ions diffused into III‐V compound semiconductors

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Effect of SiO₂ surface chemistry on the oxidation of silicon

J. M. deLarios; D. B. Kao; C. R. Helms; B. E. Deal

Appl. Phys. Lett. 54, 715–717 (1989) https://doi.org/10.1063/1.101469

Abstract

View articletitled, Effect of SiO2 surface chemistry on the oxidation of silicon

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Elucidation of x‐ray diffraction data on the nature of the ordering of GaInP₂ and how the ordering relates to changes in the optical properties

Sarah R. Kurtz; J. M. Olson; A. Kibbler

Appl. Phys. Lett. 54, 718–720 (1989) https://doi.org/10.1063/1.101470

Abstract

View articletitled, Elucidation of x‐ray diffraction data on the nature of the ordering of GaInP2 and how the ordering relates to changes in the optical properties

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Planar Ge/Pd and alloyed Au‐Ge‐Ni ohmic contacts to n‐Al_xGa_1−xAs (0≤x≤0.3)

E. D. Marshall; L. S. Yu; S. S. Lau; T. F. Kuech; K. L. Kavanagh

Appl. Phys. Lett. 54, 721–723 (1989) https://doi.org/10.1063/1.100872

Abstract

View articletitled, Planar Ge/Pd and alloyed Au‐Ge‐Ni ohmic contacts to n‐AlxGa1−xAs (0≤x≤0.3)

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Surface passivation of GaAs

H. H. Lee; R. J. Racicot; S. H. Lee

Appl. Phys. Lett. 54, 724–726 (1989) https://doi.org/10.1063/1.100873

Abstract

View articletitled, Surface passivation of GaAs

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Study of the DX center fine structure in ion‐implanted Al_0.27Ga_0.73As processed by rapid thermal annealing

A. C. Campbell; A. Dodabalapur; G. E. Crook; B. G. Streetman

Appl. Phys. Lett. 54, 727–729 (1989) https://doi.org/10.1063/1.100874

Abstract

View articletitled, Study of the DX center fine structure in ion‐implanted Al0.27Ga0.73As processed by rapid thermal annealing

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High efficiency single quantum well graded‐index separate‐confinement heterostructure lasers fabricated with MeV oxygen ion implantation

Fulin Xiong; T. A. Tombrello; H. Wang; T. R. Chen; H. Z. Chen; H. Morkoç; A. Yariv

Appl. Phys. Lett. 54, 730–732 (1989) https://doi.org/10.1063/1.100875

Abstract

View articletitled, High efficiency single quantum well graded‐index separate‐confinement heterostructure lasers fabricated with MeV oxygen ion implantation

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Spatial charge distribution in the plasma‐enhanced chemical vapor deposited nitrogen‐rich silicon nitride

J. Kanicki; S. Hug

Appl. Phys. Lett. 54, 733–735 (1989) https://doi.org/10.1063/1.100876

Abstract

View articletitled, Spatial charge distribution in the plasma‐enhanced chemical vapor deposited nitrogen‐rich silicon nitride

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Laser‐induced metal deposition on semiconductors from liquid electrolytes

L. Nánai; I. Hevesi; F. V. Bunkin; B. S. Luk’yanchuk; M. R. Brook; G. A. Shafeev; Daniel A. Jelski; Z. C. Wu; Thomas F. George

Appl. Phys. Lett. 54, 736–738 (1989) https://doi.org/10.1063/1.100877

Abstract

View articletitled, Laser‐induced metal deposition on semiconductors from liquid electrolytes

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Admittance spectroscopy measurement of band offsets in strained layers of In_xGa_1−xAs grown on InP

R. E. Cavicchi; D. V. Lang; D. Gershoni; A. M. Sergent; J. M. Vandenberg; S. N. G. Chu; M. B. Panish

Appl. Phys. Lett. 54, 739–741 (1989) https://doi.org/10.1063/1.100878

Abstract

View articletitled, Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

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GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decay

M. S. Mazzola; K. H. Schoenbach; V. K. Lakdawala; R. Germer; G. M. Loubriel; F. J. Zutavern

Appl. Phys. Lett. 54, 742–744 (1989) https://doi.org/10.1063/1.100879

Abstract

View articletitled, GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decay

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Room‐temperature confinement and photoluminescence near 3 μm from HgCdTe multiple quantum wells

C. L. Cesar; M. N. Islam; R. D. Feldman; R. Spitzer; R. F. Austin; A. E. DiGiovanni; J. Shah; J. Orenstein

Appl. Phys. Lett. 54, 745–747 (1989) https://doi.org/10.1063/1.100880

Abstract

View articletitled, Room‐temperature confinement and photoluminescence near 3 μm from HgCdTe multiple quantum wells

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High‐speed absorption recovery in quantum well diodes by diffusive electrical conduction

G. Livescu; D. A. B. Miller; T. Sizer; D. J. Burrows; J. E. Cunningham; A. C. Gossard; J. H. English

Appl. Phys. Lett. 54, 748–750 (1989) https://doi.org/10.1063/1.100881

Abstract

View articletitled, High‐speed absorption recovery in quantum well diodes by diffusive electrical conduction

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Dopant redistribution during oxidation of SiGe

F. K. LeGoues; R. Rosenberg; B. S. Meyerson

Appl. Phys. Lett. 54, 751–753 (1989) https://doi.org/10.1063/1.100882

Abstract

View articletitled, Dopant redistribution during oxidation of SiGe

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High critical currents in epitaxial YBa₂Cu₃O_7−x thin films on silicon with buffer layers

X. D. Wu; A. Inam; M. S. Hegde; B. Wilkens; C. C. Chang; D. M. Hwang; L. Nazar; T. Venkatesan; S. Miura; S. Matsubara; Y. Miyasaka; N. Shohata

Appl. Phys. Lett. 54, 754–756 (1989) https://doi.org/10.1063/1.101471

Abstract

View articletitled, High critical currents in epitaxial YBa2Cu3O7−x thin films on silicon with buffer layers

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Millimeter wave surface resistance of epitaxially grown YBa₂Cu₃O_7−x thin films

N. Klein; G. Müller; H. Piel; B. Roas; L. Schultz; U. Klein; M. Peiniger

Appl. Phys. Lett. 54, 757–759 (1989) https://doi.org/10.1063/1.101472

Abstract

View articletitled, Millimeter wave surface resistance of epitaxially grown YBa2Cu3O7−x thin films

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Highly oriented Tl₂Ba₂Ca₂Cu₃O₁₀ thin films by pulsed laser evaporation

S. H. Liou; K. D. Aylesworth; N. J. Ianno; B. Johs; D. Thompson; D. Meyer; John A. Woollam; Colleen Barry

Appl. Phys. Lett. 54, 760–762 (1989) https://doi.org/10.1063/1.101473

Abstract

View articletitled, Highly oriented Tl2Ba2Ca2Cu3O10 thin films by pulsed laser evaporation

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Critical currents and thermally activated flux motion in high‐temperature superconductors

T. T. M. Palstra; B. Batlogg; R. B. van Dover; L. F. Schneemeyer; J. V. Waszczak

Appl. Phys. Lett. 54, 763–765 (1989) https://doi.org/10.1063/1.101474

Abstract

View articletitled, Critical currents and thermally activated flux motion in high‐temperature superconductors

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Fabrication of stable superconductive wires with YBa₂Cu₃O_x/Ag₂O composite core

S. Sen; In‐Gann Chen; C. H. Chen; D. M. Stefanescu

Appl. Phys. Lett. 54, 766–768 (1989) https://doi.org/10.1063/1.101475

Abstract

View articletitled, Fabrication of stable superconductive wires with YBa2Cu3Ox/Ag2O composite core

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Growth of 200 Å superconducting Bi‐Sr‐Ca‐Cu oxide thin films

J.‐J. Yeh; M. Hong

Appl. Phys. Lett. 54, 769–771 (1989) https://doi.org/10.1063/1.101476

Abstract

View articletitled, Growth of 200 Å superconducting Bi‐Sr‐Ca‐Cu oxide thin films

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X‐ray photoemission studies of the interfacial reactions of Pt and Au on anodic oxide of Hg_0.8Cd_0.2Te

W. M. Lau; J.‐W. He; P. R. Norton

Appl. Phys. Lett. 54, 772–774 (1989) https://doi.org/10.1063/1.101352

Abstract

View articletitled, X‐ray photoemission studies of the interfacial reactions of Pt and Au on anodic oxide of Hg0.8Cd0.2Te

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Synthesis of composite thin films by simultaneous use of pulsed laser and conventional thermal evaporation

S. J. Dikshit; V. P. Godbole; S. M. Chaudhari; S. M. Kanetkar; S. B. Ogale

Appl. Phys. Lett. 54, 775–777 (1989) https://doi.org/10.1063/1.101477

Abstract

View articletitled, Synthesis of composite thin films by simultaneous use of pulsed laser and conventional thermal evaporation

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Multifrequency room‐temperature continuous diode and Ar* laser‐pumped Er³⁺ laser emission between 2.66 and 2.85 μm

Photorefractive waveguides and nonlinear mode coupling effects

Novel scalloped‐mirror diffraction‐coupled InGaAsP/InP buried‐heterostructure laser arrays

Generation of high‐power, high repetition rate, subpicosecond pulses by intracavity chirped pulse regenerative amplification

Effects of amorphous silicon capping layer on arsenic redistribution during TiSi₂ formation

Compensation of the temperature dependence of the optical characteristics of twisted nematic liquid‐crystal displays using a single chiral dopant

Photoemission investigation of the room‐temperature adsorption of trimethylgallium on GaAs surface

Ga_1−xAl_xAs purification during its liquid phase epitaxial growth in the presence of Yb

Ion pairing effects on substitutional impurity diffusion in silicon

Solid phase recrystallization in molecular beam deposited gallium arsenide

Heteroepitaxial growth of InN by microwave‐excited metalorganic vapor phase epitaxy

Intracenter transitions in triply ionized erbium ions diffused into III‐V compound semiconductors

Effect of SiO₂ surface chemistry on the oxidation of silicon

Elucidation of x‐ray diffraction data on the nature of the ordering of GaInP₂ and how the ordering relates to changes in the optical properties

Planar Ge/Pd and alloyed Au‐Ge‐Ni ohmic contacts to n‐Al_xGa_1−xAs (0≤x≤0.3)

Surface passivation of GaAs

Study of the DX center fine structure in ion‐implanted Al_0.27Ga_0.73As processed by rapid thermal annealing

High efficiency single quantum well graded‐index separate‐confinement heterostructure lasers fabricated with MeV oxygen ion implantation

Spatial charge distribution in the plasma‐enhanced chemical vapor deposited nitrogen‐rich silicon nitride

Laser‐induced metal deposition on semiconductors from liquid electrolytes

Admittance spectroscopy measurement of band offsets in strained layers of In_xGa_1−xAs grown on InP

GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decay

Room‐temperature confinement and photoluminescence near 3 μm from HgCdTe multiple quantum wells

High‐speed absorption recovery in quantum well diodes by diffusive electrical conduction

Dopant redistribution during oxidation of SiGe

High critical currents in epitaxial YBa₂Cu₃O_7−x thin films on silicon with buffer layers

Millimeter wave surface resistance of epitaxially grown YBa₂Cu₃O_7−x thin films

Highly oriented Tl₂Ba₂Ca₂Cu₃O₁₀ thin films by pulsed laser evaporation

Critical currents and thermally activated flux motion in high‐temperature superconductors

Fabrication of stable superconductive wires with YBa₂Cu₃O_x/Ag₂O composite core

Growth of 200 Å superconducting Bi‐Sr‐Ca‐Cu oxide thin films

X‐ray photoemission studies of the interfacial reactions of Pt and Au on anodic oxide of Hg_0.8Cd_0.2Te

Synthesis of composite thin films by simultaneous use of pulsed laser and conventional thermal evaporation

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