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Volume 53, Issue 22

28 November 1988

All Issues

ISSN 0003-6951

EISSN 1077-3118

Coherent, monolithic two‐dimensional (10×10) laser arrays using grating surface emission

G. A. Evans; N. W. Carlson; J. M. Hammer; M. Lurie; J. K. Butler; S. L. Palfrey; R. Amantea; L. A. Carr; F. Z. Hawrylo; E. A. James; C. J. Kaiser; J. B. Kirk; W. F. Reichert; S. R. Chinn; J. R. Shealy; P. S. Zory

Appl. Phys. Lett. 53, 2123–2125 (1988) https://doi.org/10.1063/1.100293

Abstract

View articletitled, Coherent, monolithic two‐dimensional (10×10) laser arrays using grating surface emission

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‘‘Bootstrap’’ loss mechanism for electromagnetic waves guided in a nominally loss‐free nonlinear medium

H. Suhl; F. Vernon, Jr.; W. Fenner

Appl. Phys. Lett. 53, 2126–2128 (1988) https://doi.org/10.1063/1.100294

Abstract

View articletitled, ‘‘Bootstrap’’ loss mechanism for electromagnetic waves guided in a nominally loss‐free nonlinear medium

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Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides

Utpal Das; Yi Chen; Pallab K. Bhattacharya; Paul R. Berger

Appl. Phys. Lett. 53, 2129–2131 (1988) https://doi.org/10.1063/1.100295

Abstract

View articletitled, Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides

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InGaAs/InGaAsP distributed feedback quantum well laser with an intracavity phase modulator

U. Koren; T. L. Koch; B. I. Miller; A. Shahar

Appl. Phys. Lett. 53, 2132–2134 (1988) https://doi.org/10.1063/1.100296

Abstract

View articletitled, InGaAs/InGaAsP distributed feedback quantum well laser with an intracavity phase modulator

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Kinetic model for gradual degradation in semiconductor lasers and light‐emitting diodes

Yu. L. Khait; J. Salzman; R. Beserman

Appl. Phys. Lett. 53, 2135–2137 (1988) https://doi.org/10.1063/1.100297

Abstract

View articletitled, Kinetic model for gradual degradation in semiconductor lasers and light‐emitting diodes

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Monolithic GaAs/AlAs optical bistable étalons with improved switching characteristics

R. Kuszelewicz; J. L. Oudar; J. C. Michel; R. Azoulay

Appl. Phys. Lett. 53, 2138–2140 (1988) https://doi.org/10.1063/1.100298

Abstract

View articletitled, Monolithic GaAs/AlAs optical bistable étalons with improved switching characteristics

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New excitation method of surface polaritons

Yasuhiko Nakagawa; Michihiro Kaneko; Noboru Terunuma

Appl. Phys. Lett. 53, 2141–2142 (1988) https://doi.org/10.1063/1.100503

Abstract

View articletitled, New excitation method of surface polaritons

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Plasma immersion ion implantation using plasmas generated by radio frequency techniques

J. Tendys; I. J. Donnelly; M. J. Kenny; J. T. A. Pollock

Appl. Phys. Lett. 53, 2143–2145 (1988) https://doi.org/10.1063/1.100299

Abstract

View articletitled, Plasma immersion ion implantation using plasmas generated by radio frequency techniques

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Laser wakefield acceleration and relativistic optical guiding

P. Sprangle; E. Esarey; A. Ting; G. Joyce

Appl. Phys. Lett. 53, 2146–2148 (1988) https://doi.org/10.1063/1.100300

Abstract

View articletitled, Laser wakefield acceleration and relativistic optical guiding

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Hydrogen incorporation in silicon (oxy)nitride thin films

A. E. T. Kuiper; M. F. C. Willemsen; L. J. van IJzendoorn

Appl. Phys. Lett. 53, 2149–2151 (1988) https://doi.org/10.1063/1.100301

Abstract

View articletitled, Hydrogen incorporation in silicon (oxy)nitride thin films

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MeV ion implantation of N into Ti for surface hardening

F. Z. Cui; A. M. Vredenberg; F. W. Saris

Appl. Phys. Lett. 53, 2152–2154 (1988) https://doi.org/10.1063/1.100302

Abstract

View articletitled, MeV ion implantation of N into Ti for surface hardening

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Point defect enhanced grain growth in silicon thin films: The role of ion bombardment and dopants

Harry A. Atwater; Carl V. Thompson

Appl. Phys. Lett. 53, 2155–2157 (1988) https://doi.org/10.1063/1.100303

Abstract

View articletitled, Point defect enhanced grain growth in silicon thin films: The role of ion bombardment and dopants

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Photoluminescence study on undoped single quantum well pseudomorphic structures

P. B. Kirby; M. B. Simpson; J. D. Wilcox; R. S. Smith; T. M. Kerr; B. A. Miller; C. E. C. Wood

Appl. Phys. Lett. 53, 2158–2160 (1988) https://doi.org/10.1063/1.100304

Abstract

View articletitled, Photoluminescence study on undoped single quantum well pseudomorphic structures

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Interfacial reactions between indium and anodic oxide of mercury cadmium telluride

W. M. Lau

Appl. Phys. Lett. 53, 2161–2163 (1988) https://doi.org/10.1063/1.100504

Abstract

View articletitled, Interfacial reactions between indium and anodic oxide of mercury cadmium telluride

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Transmission electron microscopic study of the ordered structure in GaInP/GaAs epitaxially grown by metalorganic chemical vapor deposition

E. Morita; M. Ikeda; O. Kumagai; K. Kaneko

Appl. Phys. Lett. 53, 2164–2166 (1988) https://doi.org/10.1063/1.100287

Abstract

View articletitled, Transmission electron microscopic study of the ordered structure in GaInP/GaAs epitaxially grown by metalorganic chemical vapor deposition

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Evidence of arsenic‐induced surface defects in high‐dose As⁺‐implanted rapidly annealed silicon

S. N. Kumar; G. Chaussemy; B. Canut; A. Laugier

Appl. Phys. Lett. 53, 2167–2169 (1988) https://doi.org/10.1063/1.100414

Abstract

View articletitled, Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon

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Optical observation of subbands in amorphous silicon ultrathin single layers

K. Hattori; T. Mori; H. Okamoto; Y. Hamakawa

Appl. Phys. Lett. 53, 2170–2172 (1988) https://doi.org/10.1063/1.100272

Abstract

View articletitled, Optical observation of subbands in amorphous silicon ultrathin single layers

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New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma

I. Suemune; Y. Kunitsugu; Y. Tanaka; Y. Kan; M. Yamanishi

Appl. Phys. Lett. 53, 2173–2175 (1988) https://doi.org/10.1063/1.100273

Abstract

View articletitled, New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma

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One‐dimensional electronic systems in ultrafine mesa‐etched single and multiple quantum well wires

T. Demel; D. Heitmann; P. Grambow; K. Ploog

Appl. Phys. Lett. 53, 2176–2178 (1988) https://doi.org/10.1063/1.100274

Abstract

View articletitled, One‐dimensional electronic systems in ultrafine mesa‐etched single and multiple quantum well wires

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Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

G. L. Zhou; K. M. Chen; W. D. Jiang; C. Sheng; X. J. Zhang; Xun Wang

Appl. Phys. Lett. 53, 2179–2181 (1988) https://doi.org/10.1063/1.100275

Abstract

View articletitled, Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

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Zn doping characteristics for InGaAlP grown by low‐pressure metalorganic chemical vapor deposition

Y. Nishikawa; Y. Tsuburai; C. Nozaki; Y. Ohba; Y. Kokubun; H. Kinoshita

Appl. Phys. Lett. 53, 2182–2184 (1988) https://doi.org/10.1063/1.100276

Abstract

View articletitled, Zn doping characteristics for InGaAlP grown by low‐pressure metalorganic chemical vapor deposition

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Modification of exciton emission energies in InGaAs/AlInAs quantum wells by rapid thermal annealing

J. Y. Chi; Emil S. Koteles; R. P. Holmstrom

Appl. Phys. Lett. 53, 2185–2187 (1988) https://doi.org/10.1063/1.100277

Abstract

View articletitled, Modification of exciton emission energies in InGaAs/AlInAs quantum wells by rapid thermal annealing

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Determination of minority‐carrier lifetimes in p‐type narrow band‐gap semiconductors with two‐photon absorption excitation

M. R. Loloee; D. G. Seiler; G. B. Ward

Appl. Phys. Lett. 53, 2188–2190 (1988) https://doi.org/10.1063/1.100278

Abstract

View articletitled, Determination of minority‐carrier lifetimes in p‐type narrow band‐gap semiconductors with two‐photon absorption excitation

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Thermal stability of sawtooth‐shaped HgCdTe superlattices

Jeffrey T. Cheung; John‐Sea Chen

Appl. Phys. Lett. 53, 2191–2193 (1988) https://doi.org/10.1063/1.100279

Abstract

View articletitled, Thermal stability of sawtooth‐shaped HgCdTe superlattices

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Substrate misorientation effects on the structure and electronic properties of GaInAs‐AlInAs interfaces

Yu‐Peng Hu; P. M. Petroff; Xueyu Qian; A. S. Brown

Appl. Phys. Lett. 53, 2194–2196 (1988) https://doi.org/10.1063/1.100280

Abstract

View articletitled, Substrate misorientation effects on the structure and electronic properties of GaInAs‐AlInAs interfaces

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Boron profile changes during low‐temperature annealing of BF⁺₂‐implanted silicon

Yudong Kim; Hisham Z. Massoud; Richard B. Fair

Appl. Phys. Lett. 53, 2197–2199 (1988) https://doi.org/10.1063/1.100505

Abstract

View articletitled, Boron profile changes during low‐temperature annealing of BF+2‐implanted silicon

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Stability of TaSi_x‐GaAs Schottky barriers in rapid thermal processing

T. E. Haynes; W. K. Chu; C. C. Han; S. S. Lau; S. T. Picraux

Appl. Phys. Lett. 53, 2200–2202 (1988) https://doi.org/10.1063/1.100506

Abstract

View articletitled, Stability of TaSix‐GaAs Schottky barriers in rapid thermal processing

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Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

David M. Joseph; Rajappan Balagopal; Robert F. Hicks; Laurence P. Sadwick; Kang L. Wang

Appl. Phys. Lett. 53, 2203–2204 (1988) https://doi.org/10.1063/1.100281

Abstract

View articletitled, Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

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A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

K. Sadra; C. M. Maziar; B. G. Streetman; D. S. Tang

Appl. Phys. Lett. 53, 2205–2207 (1988) https://doi.org/10.1063/1.100282

Abstract

View articletitled, A Monte Carlo study of electron‐hole scattering and steady‐state minority‐electron transport in GaAs

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Minimization of dopant‐induced random potential fluctuations in sawtooth doping superlattices

E. F. Schubert; T. D. Harris; J. E. Cunningham

Appl. Phys. Lett. 53, 2208–2210 (1988) https://doi.org/10.1063/1.100283

Abstract

View articletitled, Minimization of dopant‐induced random potential fluctuations in sawtooth doping superlattices

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Comparison of Si_III‐Si_V and Si_III‐V_III diffusion models in III‐V heterostructures lattice matched to GaAs

D. G. Deppe; W. E. Plano; J. E. Baker; N. Holonyak, Jr.; M. J. Ludowise; C. P. Kuo; R. M. Fletcher; T. D. Osentowski; M. G. Craford

Appl. Phys. Lett. 53, 2211–2213 (1988) https://doi.org/10.1063/1.100284

Abstract

View articletitled, Comparison of SiIII‐SiV and SiIII‐VIII diffusion models in III‐V heterostructures lattice matched to GaAs

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Dynamics of photoexcited carriers in micron‐size InP‐InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy

K. Kash; P. Grabbe; R. E. Nahory; A. Scherer; A. Weaver; C. Caneau

Appl. Phys. Lett. 53, 2214–2216 (1988) https://doi.org/10.1063/1.100285

Abstract

View articletitled, Dynamics of photoexcited carriers in micron‐size InP‐InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy

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Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

B. J. Skromme; M. C. Tamargo; J. L. de Miguel; R. E. Nahory

Appl. Phys. Lett. 53, 2217–2219 (1988) https://doi.org/10.1063/1.100286

Abstract

View articletitled, Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

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New modulated structure in a Pb‐doped Bi‐Ca‐Sr‐Cu‐O superconductor

R. Ramesh; G. van Tendeloo; G. Thomas; S. M. Green; H. L. Luo

Appl. Phys. Lett. 53, 2220–2222 (1988) https://doi.org/10.1063/1.100507

Abstract

View articletitled, New modulated structure in a Pb‐doped Bi‐Ca‐Sr‐Cu‐O superconductor

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Magnetization and critical currents of Bi‐Sr‐Ca‐Cu‐O and Ba₂YCu₃O₇ superconductors

E. M. Gyorgy; R. B. van Dover; S. Jin; R. C. Sherwood; L. F. Schneemeyer; T. H. Tiefel; J. V. Waszczak

Appl. Phys. Lett. 53, 2223–2225 (1988) https://doi.org/10.1063/1.100508

Abstract

View articletitled, Magnetization and critical currents of Bi‐Sr‐Ca‐Cu‐O and Ba2YCu3O7 superconductors

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Planar weak‐link devices from YBaCuO and BiSrCaCuO films

I. S. Gergis; J. A. Titus; P. H. Kobrin; A. B. Harker

Appl. Phys. Lett. 53, 2226–2228 (1988) https://doi.org/10.1063/1.100509

Abstract

View articletitled, Planar weak‐link devices from YBaCuO and BiSrCaCuO films

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High T_c superconducting thin films by rapid thermal annealing of Cu/BaO/Y₂O₃ layered structures

Q. Y. Ma; T. J. Licata; X. Wu; E. S. Yang; Chin‐An Chang

Appl. Phys. Lett. 53, 2229–2231 (1988) https://doi.org/10.1063/1.100510

Abstract

View articletitled, High Tc superconducting thin films by rapid thermal annealing of Cu/BaO/Y2O3 layered structures

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Epitaxial growth of YBa₂Cu₃O₇₋_x thin films on (110) SrTiO₃ single crystals by activated reactive evaporation

T. Terashima; Y. Bando; K. Iijima; K. Yamamoto; K. Hirata

Appl. Phys. Lett. 53, 2232–2234 (1988) https://doi.org/10.1063/1.100511

Abstract

View articletitled, Epitaxial growth of YBa2Cu3O7−x thin films on (110) SrTiO3 single crystals by activated reactive evaporation

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Synthesis of LaBa₂Cu₃O_7−y through tetragonal to orthorhombic phase transition at high oxygen deficiency

Stephen G. Brass; Mohammad H. Ghandehari

Appl. Phys. Lett. 53, 2235–2237 (1988) https://doi.org/10.1063/1.100512

Abstract

View articletitled, Synthesis of LaBa2Cu3O7−y through tetragonal to orthorhombic phase transition at high oxygen deficiency

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Magnetization measurements of single levitated grains of Ba₂YCu₃O₇

G. S. Grader; A. F. Hebard; R. H. Eick

Appl. Phys. Lett. 53, 2238–2240 (1988) https://doi.org/10.1063/1.100513

Abstract

View articletitled, Magnetization measurements of single levitated grains of Ba2YCu3O7

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