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Volume 53, Issue 10

5 September 1988

All Issues

ISSN 0003-6951

EISSN 1077-3118

Generation of 0.6 μJ pulses of 16 fs duration through high‐repetition rate amplification of self‐phase modulated pulses

G. Boyer; M. Franco; J. P. Chambaret; A. Migus; A. Antonetti; P. Georges; F. Salin; A. Brun

Appl. Phys. Lett. 53, 823–825 (1988) https://doi.org/10.1063/1.100130

Abstract

View articletitled, Generation of 0.6 μJ pulses of 16 fs duration through high‐repetition rate amplification of self‐phase modulated pulses

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Electrocontrolled beam coupling and bistable behavior in SBN:Ce crystals

Jian Ma; Liren Liu; Shudong Wu; Zhijiang Wang; Liangying Xu; Biyun Shu

Appl. Phys. Lett. 53, 826–827 (1988) https://doi.org/10.1063/1.100154

Abstract

View articletitled, Electrocontrolled beam coupling and bistable behavior in SBN:Ce crystals

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Exponential gain in a Smith–Purcell amplifier

Levi Schächter; Amiram Ron

Appl. Phys. Lett. 53, 828–830 (1988) https://doi.org/10.1063/1.100131

Abstract

View articletitled, Exponential gain in a Smith–Purcell amplifier

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Laser photoablation of spin‐on‐glass

Michael Hogan; James G. Lunney

Appl. Phys. Lett. 53, 831–833 (1988) https://doi.org/10.1063/1.100085

Abstract

View articletitled, Laser photoablation of spin‐on‐glass

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Room‐temperature optically pumped Cd_0.25Zn_0.75Te/ZnTe quantum well lasers grown on GaAs substrates

A. M. Glass; K. Tai; R. B. Bylsma; R. D. Feldman; D. H. Olson; R. F. Austin

Appl. Phys. Lett. 53, 834–836 (1988) https://doi.org/10.1063/1.100086

Abstract

View articletitled, Room‐temperature optically pumped Cd0.25Zn0.75Te/ZnTe quantum well lasers grown on GaAs substrates

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Picosecond nonlinear polarization switching with a fiber filter

S. Trillo; S. Wabnitz; N. Finlayson; W. C. Banyai; C. T. Seaton; G. I. Stegeman; R. H. Stolen

Appl. Phys. Lett. 53, 837–839 (1988) https://doi.org/10.1063/1.100087

Abstract

View articletitled, Picosecond nonlinear polarization switching with a fiber filter

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Infrared power limiting and self‐switching in CdTe

William H. Steier; Jayant Kumar; Mehrdad Ziari

Appl. Phys. Lett. 53, 840–841 (1988) https://doi.org/10.1063/1.100088

Abstract

View articletitled, Infrared power limiting and self‐switching in CdTe

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In situ observation on electron‐beam‐induced chemical vapor deposition by transmission electron microscopy

Shinji Matsui; Toshinari Ichihashi

Appl. Phys. Lett. 53, 842–844 (1988) https://doi.org/10.1063/1.100089

Abstract

View articletitled, In situ observation on electron‐beam‐induced chemical vapor deposition by transmission electron microscopy

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Angular dependence of preferential sputtering and composition in aluminum‐copper thin films

P. J. Rudeck; J. M. E. Harper; P. M. Fryer

Appl. Phys. Lett. 53, 845–847 (1988) https://doi.org/10.1063/1.100090

Abstract

View articletitled, Angular dependence of preferential sputtering and composition in aluminum‐copper thin films

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Excess stress and the stability of strained heterostructures

J. Y. Tsao; B. W. Dodson

Appl. Phys. Lett. 53, 848–850 (1988) https://doi.org/10.1063/1.100091

Abstract

View articletitled, Excess stress and the stability of strained heterostructures

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Anomalous diffusion of boron implanted into silicon along the [100] direction

A. E. Michel; M. Numan; W. K. Chu

Appl. Phys. Lett. 53, 851–853 (1988) https://doi.org/10.1063/1.100092

Abstract

View articletitled, Anomalous diffusion of boron implanted into silicon along the [100] direction

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First room‐temperature cw operation of a GaInAsP/InP light‐emitting diode on a silicon substrate

M. Razeghi; R. Blondeau; M. Defour; F. Omnes; P. Maurel; F. Brillouet

Appl. Phys. Lett. 53, 854–855 (1988) https://doi.org/10.1063/1.100093

Abstract

View articletitled, First room‐temperature cw operation of a GaInAsP/InP light‐emitting diode on a silicon substrate

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Creation of deep levels in horizontal Bridgman‐grown GaAs by hydrogenation

Hoon Young Cho; Eun Kyu Kim; Suk‐Ki Min; Jae Boong Kim; Jin Jang

Appl. Phys. Lett. 53, 856–858 (1988) https://doi.org/10.1063/1.100094

Abstract

View articletitled, Creation of deep levels in horizontal Bridgman‐grown GaAs by hydrogenation

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Coherence length in quantum interference devices having periodic potential

Kotaro Tsubaki; Yasuhiro Tokura

Appl. Phys. Lett. 53, 859–861 (1988) https://doi.org/10.1063/1.100095

Abstract

View articletitled, Coherence length in quantum interference devices having periodic potential

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Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH₃ preflow

Y. Kohama; K. Uchida; T. Soga; T. Jimbo; M. Umeno

Appl. Phys. Lett. 53, 862–864 (1988) https://doi.org/10.1063/1.100096

Abstract

View articletitled, Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH3 preflow

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Electron spin resonance and transmission electron microscopy studies of solution‐grown CdTe thin films

G. K. Padam; S. K. Gupta

Appl. Phys. Lett. 53, 865–867 (1988) https://doi.org/10.1063/1.100097

Abstract

View articletitled, Electron spin resonance and transmission electron microscopy studies of solution‐grown CdTe thin films

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High‐resolution focused ion beam lithography

Shinji Matsui; Yoshikatsu Kojima; Yukinori Ochiai

Appl. Phys. Lett. 53, 868–870 (1988) https://doi.org/10.1063/1.100098

Abstract

View articletitled, High‐resolution focused ion beam lithography

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Deep states in silicon‐on‐insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy

P. K. McLarty; D. E. Ioannou; H. L. Hughes

Appl. Phys. Lett. 53, 871–873 (1988) https://doi.org/10.1063/1.100099

Abstract

View articletitled, Deep states in silicon‐on‐insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy

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Effects of microcracking on Al_xGa_1−xAs‐GaAs quantum well lasers grown on Si

D. G. Deppe; D. C. Hall; N. Holonyak, Jr.; R. J. Matyi; H. Shichijo; J. E. Epler

Appl. Phys. Lett. 53, 874–876 (1988) https://doi.org/10.1063/1.100100

Abstract

View articletitled, Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si

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Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B₂O₃

T. E. Jackman; D. C. Houghton; M. W. Denhoff; Song Kechang; J. McCaffrey; J. A. Jackman; C. G. Tuppen

Appl. Phys. Lett. 53, 877–879 (1988) https://doi.org/10.1063/1.100101

Abstract

View articletitled, Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3

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Free‐carrier and temperature effects in amorphous silicon thin films

C. Tanguy; D. Hulin; A. Mourchid; P. M. Fauchet; S. Wagner

Appl. Phys. Lett. 53, 880–882 (1988) https://doi.org/10.1063/1.100102

Abstract

View articletitled, Free‐carrier and temperature effects in amorphous silicon thin films

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Piezoreflectance characterization of double‐barrier resonant tunneling structures

R. L. Tober; J. Pamulapati; J. E. Oh; P. K. Bhattacharya

Appl. Phys. Lett. 53, 883–885 (1988) https://doi.org/10.1063/1.100103

Abstract

View articletitled, Piezoreflectance characterization of double‐barrier resonant tunneling structures

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Raman scattering in InAs_1−xSb_x grown by organometallic vapor phase epitaxy

Y. T. Cherng; K. Y. Ma; G. B. Stringfellow

Appl. Phys. Lett. 53, 886–887 (1988) https://doi.org/10.1063/1.100104

Abstract

View articletitled, Raman scattering in InAs1−xSbx grown by organometallic vapor phase epitaxy

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In situ measurements of SiO(g) production during dry oxidation of crystalline silicon

R. E. Walkup; S. I. Raider

Appl. Phys. Lett. 53, 888–890 (1988) https://doi.org/10.1063/1.100105

Abstract

View articletitled, In situ measurements of SiO(g) production during dry oxidation of crystalline silicon

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Enhanced electrical quality of low‐temperature (T_dep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition

S. Ohi; W. R. Burger; R. Reif

Appl. Phys. Lett. 53, 891–893 (1988) https://doi.org/10.1063/1.100106

Abstract

View articletitled, Enhanced electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition

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Reflection high‐energy electron diffraction intensity oscillations in IV‐VI compound semiconductors

Jacob Fuchs; Ze’ev Feit; Horst Preier

Appl. Phys. Lett. 53, 894–896 (1988) https://doi.org/10.1063/1.100107

Abstract

View articletitled, Reflection high‐energy electron diffraction intensity oscillations in IV‐VI compound semiconductors

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Nonlinear optical absorption in semiconductor epitaxial depletion regions

N. M. Jokerst; E. Garmire

Appl. Phys. Lett. 53, 897–899 (1988) https://doi.org/10.1063/1.100108

Abstract

View articletitled, Nonlinear optical absorption in semiconductor epitaxial depletion regions

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Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained‐layer superlattices

C. K. Peng; G. Ji; N. S. Kumar; H. Morkoç

Appl. Phys. Lett. 53, 900–901 (1988) https://doi.org/10.1063/1.100109

Abstract

View articletitled, Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained‐layer superlattices

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Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si

S. F. Gong; H. T. G. Hentzell; G. Radnoczi; A. Charai

Appl. Phys. Lett. 53, 902–904 (1988) https://doi.org/10.1063/1.100110

Abstract

View articletitled, Solid phase epitaxy and doping of Si through Sb‐enhanced recrystallization of polycrystalline Si

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Formation of low‐temperature Al/n‐Si Schottky contacts using a partially ionized beam deposition technique

A. S. Yapsir; P. Bai; T.‐M. Lu

Appl. Phys. Lett. 53, 905–907 (1988) https://doi.org/10.1063/1.100111

Abstract

View articletitled, Formation of low‐temperature Al/n‐Si Schottky contacts using a partially ionized beam deposition technique

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As‐deposited high T_c and J_c superconducting thin films made at low temperatures

A. Inam; M. S. Hegde; X. D. Wu; T. Venkatesan; P. England; P. F. Miceli; E. W. Chase; C. C. Chang; J. M. Tarascon; J. B. Wachtman

Appl. Phys. Lett. 53, 908–910 (1988) https://doi.org/10.1063/1.100155

Abstract

View articletitled, As‐deposited high Tc and Jc superconducting thin films made at low temperatures

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Superconductivity at 121 K in a new bulk Tl‐Ba‐Ca‐Cu‐O compound

M. Eibschütz; L. G. Van Uitert; G. S. Grader; E. M. Gyorgy; S. H. Glarum; W. H. Grodkiewicz; T. R. Kyle; A. E. White; K. T. Short; G. J. Zydzik

Appl. Phys. Lett. 53, 911–912 (1988) https://doi.org/10.1063/1.100156

Abstract

View articletitled, Superconductivity at 121 K in a new bulk Tl‐Ba‐Ca‐Cu‐O compound

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Structural and microstructural characterization of a high T_c superconducting BiSrCaCu oxide

J. M. Liang; L. Chang; S. F. Tang; Y. C. Chen; P. T. Wu; L. J. Chen

Appl. Phys. Lett. 53, 913–915 (1988) https://doi.org/10.1063/1.100157

Abstract

View articletitled, Structural and microstructural characterization of a high Tc superconducting BiSrCaCu oxide

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YBaCuO superconducting films on SiO₂ substrates formed from Cu/BaO/Y₂O₃/Ag layer structures

Chin‐An Chang; C. C. Tsuei; T. R. McGuire; D. S. Yee; J. P. Boresh; H. R. Lilienthal; C. E. Farrell

Appl. Phys. Lett. 53, 916–918 (1988) https://doi.org/10.1063/1.100158

Abstract

View articletitled, YBaCuO superconducting films on SiO2 substrates formed from Cu/BaO/Y2O3/Ag layer structures

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Highly oriented superconducting Tl‐Ca‐Ba‐Cu oxide thin films with 2‐1‐2‐2 phase

Yo Ichikawa; Hideaki Adachi; Kentaro Setsune; Shin‐ichiro Hatta; Kumiko Hirochi; Kiyotaka Wasa

Appl. Phys. Lett. 53, 919–921 (1988) https://doi.org/10.1063/1.100159

Abstract

View articletitled, Highly oriented superconducting Tl‐Ca‐Ba‐Cu oxide thin films with 2‐1‐2‐2 phase

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Superconducting Bi‐Sr‐Ca‐Cu‐O films by magnetron sputtering of single Bi₂O₃‐SrF₂‐CaF₂‐CuO targets

M. Levinson; S. S. P. Shah; N. Naito

Appl. Phys. Lett. 53, 922–924 (1988) https://doi.org/10.1063/1.100160

Abstract

View articletitled, Superconducting Bi‐Sr‐Ca‐Cu‐O films by magnetron sputtering of single Bi2O3‐SrF2‐CaF2‐CuO targets

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Low‐temperature preparation of superconducting YBa₂Cu₃O_7−δ films on Si, MgO, and SrTiO₃ by thermal coevaporation

P. Berberich; J. Tate; W. Dietsche; H. Kinder

Appl. Phys. Lett. 53, 925–926 (1988) https://doi.org/10.1063/1.100647

Abstract

View articletitled, Low‐temperature preparation of superconducting YBa2Cu3O7−δ films on Si, MgO, and SrTiO3 by thermal coevaporation

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Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett. 52, 625 (1988)]

Daniel Guidotti; Harold J. Hovel

Appl. Phys. Lett. 53, 927 (1988) https://doi.org/10.1063/1.100072

View articletitled, Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett. 52, 625 (1988)]

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Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett. 53, 927 (1988)]

M. Y. A. Raja; S. R. J. Brueck; M. Osinski; J. McInerney

Appl. Phys. Lett. 53, 927–928 (1988) https://doi.org/10.1063/1.100073

View articletitled, Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett. 53, 927 (1988)]

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