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Ultrathin Au films studied with the scanning tunneling microscope: Topography of insulating surfaces
Appl. Phys. Lett. 52, 1656–1657 (1988)
https://doi.org/10.1063/1.99048
Hollow cathode plasma assisted chemical vapor deposition of diamond
Appl. Phys. Lett. 52, 1658–1660 (1988)
https://doi.org/10.1063/1.99049
Thermal stressing of bipolar transistors with metal‐insulator‐semiconductor heterojunction emitters
Appl. Phys. Lett. 52, 1664–1666 (1988)
https://doi.org/10.1063/1.99051
Lattice relaxation due to hydrogen passivation in boron‐doped silicon
Appl. Phys. Lett. 52, 1667–1669 (1988)
https://doi.org/10.1063/1.99052
Effect of heat treatment on redistribution of hydrogen in directionally cast polycrystalline silicon
Appl. Phys. Lett. 52, 1670–1671 (1988)
https://doi.org/10.1063/1.99053
Metalorganic molecular beam epitaxy of γ‐Al2O3 films on Si at low growth temperatures
Appl. Phys. Lett. 52, 1672–1674 (1988)
https://doi.org/10.1063/1.99709
Experimental determination of the nanocrystalline volume fraction in silicon thin films from Raman spectroscopy
Appl. Phys. Lett. 52, 1675–1677 (1988)
https://doi.org/10.1063/1.99054
Dependence of elastic strain on thickness for ZnSe films grown on lattice‐mismatched materials
Appl. Phys. Lett. 52, 1678–1680 (1988)
https://doi.org/10.1063/1.99016
Grown‐facet‐dependent characteristics of silicon‐on‐insulator by lateral solid phase epitaxy
Appl. Phys. Lett. 52, 1681–1683 (1988)
https://doi.org/10.1063/1.99017
Combining resonant tunneling diodes for signal processing and multilevel logic
Appl. Phys. Lett. 52, 1684–1685 (1988)
https://doi.org/10.1063/1.99018
Misfit stress relaxation phenomena in GaAsP‐InGaAs strained‐layer superlattices
Z. J. Radzimski; B. L. Jiang; G. A. Rozgonyi; T. P. Humphreys; N. Hamaguchi; C. Parker; S. M. Bedair
Appl. Phys. Lett. 52, 1692–1694 (1988)
https://doi.org/10.1063/1.99638
Metal‐oxide‐semiconductor characteristics of rapid thermal nitrided thin oxides
Appl. Phys. Lett. 52, 1698–1700 (1988)
https://doi.org/10.1063/1.99710
Epitaxial growth of Ge films on GaAs (285–415 °C) by laser photochemical vapor deposition
Appl. Phys. Lett. 52, 1710–1712 (1988)
https://doi.org/10.1063/1.99025
Radiation effects in low‐pressure reoxidized nitrided oxide gate dielectrics
Appl. Phys. Lett. 52, 1713–1715 (1988)
https://doi.org/10.1063/1.99711
Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy
Appl. Phys. Lett. 52, 1721–1723 (1988)
https://doi.org/10.1063/1.99028
Structure and superconducting properties of sputtered Gd‐Ba‐Cu‐O thin films
Appl. Phys. Lett. 52, 1726–1728 (1988)
https://doi.org/10.1063/1.99713
Formation of YBa2Cu3O7 superconducting films by ion implantation
Appl. Phys. Lett. 52, 1729–1731 (1988)
https://doi.org/10.1063/1.99714
Thickness dependence of superconductivity in rf‐sputtered Y‐Ba‐Cu‐O thin films
Appl. Phys. Lett. 52, 1732–1734 (1988)
https://doi.org/10.1063/1.99715
Y‐Ba‐Cu‐O films by rf magnetron sputtering using single composite targets: Superconducting and structural properties
Appl. Phys. Lett. 52, 1735–1737 (1988)
https://doi.org/10.1063/1.99716
New 120 K Tl‐Ca‐Ba‐Cu‐O superconductor
Z. Z. Sheng; W. Kiehl; J. Bennett; A. El Ali; D. Marsh; G. D. Mooney; F. Arammash; J. Smith; D. Viar; A. M. Hermann
Appl. Phys. Lett. 52, 1738–1740 (1988)
https://doi.org/10.1063/1.99717
Use of ion beams to decompose metalorganics into patterned thin‐film superconductors
Appl. Phys. Lett. 52, 1741–1742 (1988)
https://doi.org/10.1063/1.99718
Formation of high Tc superconducting films by organometallic chemical vapor deposition
Appl. Phys. Lett. 52, 1743–1745 (1988)
https://doi.org/10.1063/1.99719
Sputter deposition of YBa2Cu3O6+x on alumina and the influence of ZrO2 buffer layers
Appl. Phys. Lett. 52, 1746–1748 (1988)
https://doi.org/10.1063/1.99720
Current fluctuations and silicon oxide wear‐out in metal‐oxide‐semiconductor tunnel diodes
Appl. Phys. Lett. 52, 1749–1751 (1988)
https://doi.org/10.1063/1.99029
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Hard x-ray photoemission study of bulk single-crystalline InGaZnO4
Goro Shibata, Yunosuke Takahashi, et al.
Membrane phononic crystals for high- mechanical defect modes at MHz frequencies in piezoelectric aluminum nitride
Anastasiia Ciers, Laurentius Radit Nindito, et al.