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Volume 52, Issue 2

11 January 1988

All Issues

ISSN 0003-6951

EISSN 1077-3118

Generation of blue light by intracavity frequency mixing of the laser and pump radiation of a miniature neodymium:yttrium aluminum garnet laser

W. P. Risk; J.‐C. Baumert; G. C. Bjorklund; F. M. Schellenberg; W. Lenth

Appl. Phys. Lett. 52, 85–87 (1988) https://doi.org/10.1063/1.99041

Abstract

View articletitled, Generation of blue light by intracavity frequency mixing of the laser and pump radiation of a miniature neodymium:yttrium aluminum garnet laser

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Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers

K. Y. Lau; P. L. Derry; A. Yariv

Appl. Phys. Lett. 52, 88–90 (1988) https://doi.org/10.1063/1.99042

Abstract

View articletitled, Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers

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Chirp and cw linewidth measurements of integrated external cavity lasers

N. K. Dutta; T. Cella; A. B. Piccirilli; R. L. Brown; C. Green

Appl. Phys. Lett. 52, 91–92 (1988) https://doi.org/10.1063/1.99043

Abstract

View articletitled, Chirp and cw linewidth measurements of integrated external cavity lasers

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Gallium arsenide photoluminescence under picosecond‐laser‐driven shock compression

X. Z. Lu; R. Garuthara; S. Lee; R. R. Alfano

Appl. Phys. Lett. 52, 93–95 (1988) https://doi.org/10.1063/1.99044

Abstract

View articletitled, Gallium arsenide photoluminescence under picosecond‐laser‐driven shock compression

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Three‐dimensional reconstruction of the ion velocity distribution function of plasma with a retarding‐grid analyzer

Naofumi Iwama; Thierry Lehner; Hisayoshi Noziri; Masataka Okado

Appl. Phys. Lett. 52, 96–97 (1988) https://doi.org/10.1063/1.99045

Abstract

View articletitled, Three‐dimensional reconstruction of the ion velocity distribution function of plasma with a retarding‐grid analyzer

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Time‐of‐flight study on the thermal etching of Al with Cl₂

R. J. A. A. Janssen; A. W. Kolfschoten; G. N. A. van Veen

Appl. Phys. Lett. 52, 98–100 (1988) https://doi.org/10.1063/1.99046

Abstract

View articletitled, Time‐of‐flight study on the thermal etching of Al with Cl2

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Diffusion of reactive ion beam etched polymers

Stanley F. Tead; William E. Vanderlinde; Arthur L. Ruoff; Edward J. Kramer

Appl. Phys. Lett. 52, 101–102 (1988) https://doi.org/10.1063/1.99062

Abstract

View articletitled, Diffusion of reactive ion beam etched polymers

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Picosecond reflection high‐energy electron diffraction

H. E. Elsayed‐Ali; G. A. Mourou

Appl. Phys. Lett. 52, 103–104 (1988) https://doi.org/10.1063/1.99063

Abstract

View articletitled, Picosecond reflection high‐energy electron diffraction

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X‐ray double‐crystal characterization of molecular beam epitaxially grown Si/Si₁_−xGe_x strained‐layer superlattices

J.‐M. Baribeau

Appl. Phys. Lett. 52, 105–107 (1988) https://doi.org/10.1063/1.99064

Abstract

View articletitled, X‐ray double‐crystal characterization of molecular beam epitaxially grown Si/Si1−xGex strained‐layer superlattices

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Liquid phase epitaxy of Pb_1−xEu_xTe thin films

A. Hacham; U. El‐Hanany; S. Rotter; Yoram Shapira

Appl. Phys. Lett. 52, 108–110 (1988) https://doi.org/10.1063/1.99065

Abstract

View articletitled, Liquid phase epitaxy of Pb1−xEuxTe thin films

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Low‐frequency noise measurements on n‐InGaAs/p‐InP junction field‐effect transistor structures

S. Kugler; K. Steiner; U. Seiler; K. Heime; E. Kuphal

Appl. Phys. Lett. 52, 111–113 (1988) https://doi.org/10.1063/1.99066

Abstract

View articletitled, Low‐frequency noise measurements on n‐InGaAs/p‐InP junction field‐effect transistor structures

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Excitation and decay mechanisms of the intra‐4f luminescence of Yb³⁺ in epitaxial InP:Yb layers

W. Körber; A. Hangleiter

Appl. Phys. Lett. 52, 114–116 (1988) https://doi.org/10.1063/1.99067

Abstract

View articletitled, Excitation and decay mechanisms of the intra‐4f luminescence of Yb3+ in epitaxial InP:Yb layers

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Very high purity InP epilayer grown by metalorganic chemical vapor deposition

M. Razeghi; Ph. Maurel; M. Defour; F. Omnes; G. Neu; A. Kozacki

Appl. Phys. Lett. 52, 117–119 (1988) https://doi.org/10.1063/1.99068

Abstract

View articletitled, Very high purity InP epilayer grown by metalorganic chemical vapor deposition

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Low‐loss short‐wavelength optical waveguides using ZnSe‐ZnS strained‐layer superlattices

Toshiya Yokogawa; Mototsugu Ogura; Takao Kajiwara

Appl. Phys. Lett. 52, 120–122 (1988) https://doi.org/10.1063/1.99069

Abstract

View articletitled, Low‐loss short‐wavelength optical waveguides using ZnSe‐ZnS strained‐layer superlattices

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Photoluminescence from InGaAs‐GaAs strained‐layer superlattices grown by flow‐rate modulation epitaxy

Michio Sato; Yoshiji Horikoshi

Appl. Phys. Lett. 52, 123–125 (1988) https://doi.org/10.1063/1.99070

Abstract

View articletitled, Photoluminescence from InGaAs‐GaAs strained‐layer superlattices grown by flow‐rate modulation epitaxy

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Small lattice relaxation at the DX center as studied by extended x‐ray absorption fine structure on Se‐doped AlGaAs

M. Mizuta; T. Kitano

Appl. Phys. Lett. 52, 126–128 (1988) https://doi.org/10.1063/1.99071

Abstract

View articletitled, Small lattice relaxation at the DX center as studied by extended x‐ray absorption fine structure on Se‐doped AlGaAs

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Sensitivity of Si diffusion in GaAs to column IV and VI donor species

D. G. Deppe; N. Holonyak, Jr.; J. E. Baker

Appl. Phys. Lett. 52, 129–131 (1988) https://doi.org/10.1063/1.99072

Abstract

View articletitled, Sensitivity of Si diffusion in GaAs to column IV and VI donor species

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Resonant tunneling and negative differential resistance in a variably spaced superlattice energy filter

C. J. Summers; K. F. Brennan; A. Torabi; H. M. Harris

Appl. Phys. Lett. 52, 132–134 (1988) https://doi.org/10.1063/1.99073

Abstract

View articletitled, Resonant tunneling and negative differential resistance in a variably spaced superlattice energy filter

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High‐temperature stability of Nb/GaAs and NbN/GaAs interfaces

J. Ding; B. Lee; R. Gronsky; J. Washburn; D. Chin; T. Van Duzer

Appl. Phys. Lett. 52, 135–137 (1988) https://doi.org/10.1063/1.99074

Abstract

View articletitled, High‐temperature stability of Nb/GaAs and NbN/GaAs interfaces

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Luminescence of heteroepitaxial zinc oxide

S. Bethke; H. Pan; B. W. Wessels

Appl. Phys. Lett. 52, 138–140 (1988) https://doi.org/10.1063/1.99030

Abstract

View articletitled, Luminescence of heteroepitaxial zinc oxide

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Hot‐electron flow in an inhomogeneous field

Michael Artaki

Appl. Phys. Lett. 52, 141–143 (1988) https://doi.org/10.1063/1.99031

Abstract

View articletitled, Hot‐electron flow in an inhomogeneous field

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Initial stages of epitaxial growth: Gallium arsenide on silicon

M. Zinke‐Allmang; L. C. Feldman; S. Nakahara

Appl. Phys. Lett. 52, 144–146 (1988) https://doi.org/10.1063/1.99032

Abstract

View articletitled, Initial stages of epitaxial growth: Gallium arsenide on silicon

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Growth of p‐type ZnSe:Li by molecular beam epitaxy

H. Cheng; J. M. DePuydt; J. E. Potts; T. L. Smith

Appl. Phys. Lett. 52, 147–149 (1988) https://doi.org/10.1063/1.99033

Abstract

View articletitled, Growth of p‐type ZnSe:Li by molecular beam epitaxy

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Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy

S. K. Shastry; S. Zemon; D. G. Kenneson; G. Lambert

Appl. Phys. Lett. 52, 150–152 (1988) https://doi.org/10.1063/1.99034

Abstract

View articletitled, Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy

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Implanted nitrogen in germanium

H. J. Stein

Appl. Phys. Lett. 52, 153–154 (1988) https://doi.org/10.1063/1.99035

Abstract

View articletitled, Implanted nitrogen in germanium

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High performance silver ohmic contacts to YBa₂Cu₃O₆₊_x superconductors

Y. Tzeng; A. Holt; R. Ely

Appl. Phys. Lett. 52, 155–156 (1988) https://doi.org/10.1063/1.99036

Abstract

View articletitled, High performance silver ohmic contacts to YBa2Cu3O6+x superconductors

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In situ resistance of Y₁Ba₂Cu₃O_x films during anneal

A. Davidson; A. Palevski; M. J. Brady; R. B. Laibowitz; R. Koch; M. Scheuermann; C. C. Chi

Appl. Phys. Lett. 52, 157–159 (1988) https://doi.org/10.1063/1.99037

Abstract

View articletitled, In situ resistance of Y1Ba2Cu3Ox films during anneal

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Versatile new metalorganic process for preparing superconducting thin films

M. E. Gross; M. Hong; S. H. Liou; P. K. Gallagher; J. Kwo

Appl. Phys. Lett. 52, 160–162 (1988) https://doi.org/10.1063/1.99038

Abstract

View articletitled, Versatile new metalorganic process for preparing superconducting thin films

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Y₁Ba₂Cu₃O_7−δ thin films grown by a simple spray deposition technique

A. Gupta; G. Koren; E. A. Giess; N. R. Moore; E. J. M. O’Sullivan; E. I. Cooper

Appl. Phys. Lett. 52, 163–165 (1988) https://doi.org/10.1063/1.99039

Abstract

View articletitled, Y1Ba2Cu3O7−δ thin films grown by a simple spray deposition technique

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Unidirectional anisotropy in surface magnetism of amorphous GdCo

G. L. Bona; F. Meier; H. C. Siegmann; R. J. Gambino

Appl. Phys. Lett. 52, 166–168 (1988) https://doi.org/10.1063/1.99040

Abstract

View articletitled, Unidirectional anisotropy in surface magnetism of amorphous GdCo

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Erratum: Thermionic emission model for the initial regime of silicon oxidation [Appl. Phys. Lett. 51, 767 (1987)]

E. A. Irene; E. A. Lewis

Appl. Phys. Lett. 52, 169 (1988) https://doi.org/10.1063/1.99661

View articletitled, Erratum: Thermionic emission model for the initial regime of silicon oxidation [Appl. Phys. Lett. 51, 767 (1987)]

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Erratum: Design of optimized high‐speed depletion‐edge‐translation optical waveguide modulators in III‐V semiconductors [Appl. Phys. Lett. 51, 792 (1987)]

L. A. Coldren; J. G. Mendoza‐Alvarez; R. H. Yan

Appl. Phys. Lett. 52, 169–170 (1988) https://doi.org/10.1063/1.99665

View articletitled, Erratum: Design of optimized high‐speed depletion‐edge‐translation optical waveguide modulators in III‐V semiconductors [Appl. Phys. Lett. 51, 792 (1987)]

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Generation of blue light by intracavity frequency mixing of the laser and pump radiation of a miniature neodymium:yttrium aluminum garnet laser

Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers

Chirp and cw linewidth measurements of integrated external cavity lasers

Gallium arsenide photoluminescence under picosecond‐laser‐driven shock compression

Three‐dimensional reconstruction of the ion velocity distribution function of plasma with a retarding‐grid analyzer

Time‐of‐flight study on the thermal etching of Al with Cl₂

Diffusion of reactive ion beam etched polymers

Picosecond reflection high‐energy electron diffraction

X‐ray double‐crystal characterization of molecular beam epitaxially grown Si/Si₁_−xGe_x strained‐layer superlattices

Liquid phase epitaxy of Pb_1−xEu_xTe thin films

Low‐frequency noise measurements on n‐InGaAs/p‐InP junction field‐effect transistor structures

Excitation and decay mechanisms of the intra‐4f luminescence of Yb³⁺ in epitaxial InP:Yb layers

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

Low‐loss short‐wavelength optical waveguides using ZnSe‐ZnS strained‐layer superlattices

Photoluminescence from InGaAs‐GaAs strained‐layer superlattices grown by flow‐rate modulation epitaxy

Small lattice relaxation at the DX center as studied by extended x‐ray absorption fine structure on Se‐doped AlGaAs

Sensitivity of Si diffusion in GaAs to column IV and VI donor species

Resonant tunneling and negative differential resistance in a variably spaced superlattice energy filter

High‐temperature stability of Nb/GaAs and NbN/GaAs interfaces

Luminescence of heteroepitaxial zinc oxide

Hot‐electron flow in an inhomogeneous field

Initial stages of epitaxial growth: Gallium arsenide on silicon

Growth of p‐type ZnSe:Li by molecular beam epitaxy

Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy

Implanted nitrogen in germanium

High performance silver ohmic contacts to YBa₂Cu₃O₆₊_x superconductors

In situ resistance of Y₁Ba₂Cu₃O_x films during anneal

Versatile new metalorganic process for preparing superconducting thin films

Y₁Ba₂Cu₃O_7−δ thin films grown by a simple spray deposition technique

Unidirectional anisotropy in surface magnetism of amorphous GdCo

Erratum: Thermionic emission model for the initial regime of silicon oxidation [Appl. Phys. Lett. 51, 767 (1987)]

Erratum: Design of optimized high‐speed depletion‐edge‐translation optical waveguide modulators in III‐V semiconductors [Appl. Phys. Lett. 51, 792 (1987)]

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