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Laser‐induced bulk damage in potassium dihydrogen phosphate crystal
Appl. Phys. Lett. 52, 857–859 (1988)
https://doi.org/10.1063/1.99253
Laser‐controlled dissociation and ionization pathways in electronically excited AsH3
Appl. Phys. Lett. 52, 860–862 (1988)
https://doi.org/10.1063/1.99254
Optoelectronic transient response of an n‐channel double heterostructure optoelectronic switch
Appl. Phys. Lett. 52, 863–865 (1988)
https://doi.org/10.1063/1.99255
X‐ray laser gain from Bragg reflection coupling in channeled relativistic beam systems
Appl. Phys. Lett. 52, 866–868 (1988)
https://doi.org/10.1063/1.99256
Bistability and switching in nonlinear prism coupling
G. I. Stegeman; G. Assanto; R. Zanoni; C. T. Seaton; E. Garmire; A. A. Maradudin; R. Reinisch; G. Vitrant
Appl. Phys. Lett. 52, 869–871 (1988)
https://doi.org/10.1063/1.99257
Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy
Appl. Phys. Lett. 52, 872–873 (1988)
https://doi.org/10.1063/1.99258
Solidification mechanisms of laser‐annealed thin copper films: Dual phase formation
Appl. Phys. Lett. 52, 874–876 (1988)
https://doi.org/10.1063/1.99259
Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing
Appl. Phys. Lett. 52, 877–879 (1988)
https://doi.org/10.1063/1.99643
Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy
Appl. Phys. Lett. 52, 880–882 (1988)
https://doi.org/10.1063/1.99260
Lattice location of heavily doped As atoms in Si films grown by partially ionized molecular beam epitaxy
Appl. Phys. Lett. 52, 883–885 (1988)
https://doi.org/10.1063/1.99261
InAs strained‐layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range
Appl. Phys. Lett. 52, 892–894 (1988)
https://doi.org/10.1063/1.99264
Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
Appl. Phys. Lett. 52, 895–897 (1988)
https://doi.org/10.1063/1.99265
CoSi2 and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor
Appl. Phys. Lett. 52, 898–900 (1988)
https://doi.org/10.1063/1.99266
Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces
Appl. Phys. Lett. 52, 907–909 (1988)
https://doi.org/10.1063/1.99269
Enhancement of carrier lifetime in silicon‐doping superlattices
Appl. Phys. Lett. 52, 910–912 (1988)
https://doi.org/10.1063/1.99270
Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices
Appl. Phys. Lett. 52, 916–918 (1988)
https://doi.org/10.1063/1.99272
Superconducting Au‐YBa2Cu3O7 composites
Appl. Phys. Lett. 52, 927–929 (1988)
https://doi.org/10.1063/1.99276
rf properties of an oxide‐superconductor half‐wave resonant line
Appl. Phys. Lett. 52, 930–932 (1988)
https://doi.org/10.1063/1.99277
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.