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Volume 51, Issue 3
20 July 1987
Applied Physics Letters Cover Image for Volume 51, Issue 3
All Issues
ISSN 0003-6951
EISSN 1077-3118
Optical properties of transparent and heat reflecting ZnO:Al films made by reactive sputtering
Z.‐C. Jin; I. Hamberg; C. G. Granqvist
Appl. Phys. Lett. 51, 149–151 (1987) https://doi.org/10.1063/1.99008
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Observation of optical Stark effect in InGaAs/InP multiple quantum wells
K. Tai; J. Hegarty; W. T. Tsang
Appl. Phys. Lett. 51, 152–154 (1987) https://doi.org/10.1063/1.98905
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Low‐threshold and wide‐bandwidth 1.3 μm InGaAsP buried crescent injection lasers with semi‐insulating current confinement layers
W. H. Cheng; C. B. Su; K. D. Buehring; J. W. Ure; D. Perrachione; D. Renner; K. L. Hess; S. W. Zehr
Appl. Phys. Lett. 51, 155–157 (1987) https://doi.org/10.1063/1.98906
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Nondestructive characterization of multilayer structures by resonant attenuated total reflection spectroscopy
Bruno Bosacchi; Robert C. Oehrle; Eric Grosse
Appl. Phys. Lett. 51, 158–160 (1987) https://doi.org/10.1063/1.98907
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Femtosecond dynamics of highly excited carriers in AlxGa1−xAs
W. Z. Lin; J. G. Fujimoto; E. P. Ippen; R. A. Logan
Appl. Phys. Lett. 51, 161–163 (1987) https://doi.org/10.1063/1.98908
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Narrow‐linewidth, electro‐optically tunable InGaAsP‐Ti:LiNbO3 extended cavity laser
F. Heismann; R. C. Alferness; L. L. Buhl; G. Eisenstein; S. K. Korotky; J. J. Veselka; L. W. Stulz; C. A. Burrus
Appl. Phys. Lett. 51, 164–166 (1987) https://doi.org/10.1063/1.98909
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Atomic arsenic detection by ArF laser‐induced fluorescence
Gary S. Selwyn
Appl. Phys. Lett. 51, 167–168 (1987) https://doi.org/10.1063/1.98910
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Low‐temperature transport properties of ultrathin CoSi2 epitaxial films
P. A. Badoz; A. Briggs; E. Rosencher; F. Arnaud d’Avitaya; C. d’Anterroches
Appl. Phys. Lett. 51, 169–171 (1987) https://doi.org/10.1063/1.98911
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Damage annealing behavior of 3 MeV Si+‐implanted silicon
A. K. Rai; J. Baker; D. C. Ingram
Appl. Phys. Lett. 51, 172–174 (1987) https://doi.org/10.1063/1.98912
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Tight‐binding theory of force constant models
Mark van Schilfgaarde; Arden Sher
Appl. Phys. Lett. 51, 175–176 (1987) https://doi.org/10.1063/1.98913
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Photoemission study of sputter‐etched InP surfaces
W. M. Lau; R. N. S. Sodhi; B. J. Flinn; K. H. Tan; G. M. Bancroft
Appl. Phys. Lett. 51, 177–179 (1987) https://doi.org/10.1063/1.98914
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Modulation‐doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor deposition
L. L. Taylor; M. J. Kane; S. J. Bass
Appl. Phys. Lett. 51, 180–182 (1987) https://doi.org/10.1063/1.98915
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Be incorporation in heavily doped molecular beam epitaxy grown GaAs: Evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements
J. F. Bresse; A. C. Papadopoulo
Appl. Phys. Lett. 51, 183–185 (1987) https://doi.org/10.1063/1.98916
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Capless rapid thermal annealing of Si+‐implanted InP
J. D. Woodhouse; M. C. Gaidis; J. P. Donnelly; C. A. Armiento
Appl. Phys. Lett. 51, 186–188 (1987) https://doi.org/10.1063/1.98917
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Effects of interface reactions on electrical characteristics of metal‐GaAs contacts
K. M. Yu; W. Walukiewicz; J. M. Jaklevic; E. E. Haller; T. Sands
Appl. Phys. Lett. 51, 189–191 (1987) https://doi.org/10.1063/1.98918
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Raman study of an epitaxial GaAs layer on a Si [100] substrate
Yihe Huang; Peter Y. Yu; Marie‐Noelle Charasse; Yuhua Lo; Shyh Wang
Appl. Phys. Lett. 51, 192–194 (1987) https://doi.org/10.1063/1.98919
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Electrical characteristics of Al/ZnS/p‐p+ Si diodes
C. B. Thomas; D. Sands; K. Brunson
Appl. Phys. Lett. 51, 195–196 (1987) https://doi.org/10.1063/1.98920
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Increase of effective viscosity of molten GaAs and InSb under an axial magnetic field
Shoichi Ozawa; Minoru Eguchi; Takashi Fujii; Tsuguo Fukuda
Appl. Phys. Lett. 51, 197–199 (1987) https://doi.org/10.1063/1.98921
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Quantum interference devices made from superconducting oxide thin films
R. H. Koch; C. P. Umbach; G. J. Clark; P. Chaudhari; R. B. Laibowitz
Appl. Phys. Lett. 51, 200–202 (1987) https://doi.org/10.1063/1.98922
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High TC superconductors—composite wire fabrication
S. Jin; R. C. Sherwood; R. B. van Dover; T. H. Tiefel; D. W. Johnson, Jr.
Appl. Phys. Lett. 51, 203–204 (1987) https://doi.org/10.1063/1.98923
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Neutron diffraction study of artificial CoO‐NiO superlattices
M. Takano; T. Terashima; Y. Bando; H. Ikeda
Appl. Phys. Lett. 51, 205–206 (1987) https://doi.org/10.1063/1.98924
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  • Online ISSN 1077-3118
  • Print ISSN 0003-6951

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