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Volume 51, Issue 14

5 October 1987

All Issues

ISSN 0003-6951

EISSN 1077-3118

Nearly degenerate four‐wave mixing in a traveling‐wave semiconductor laser amplifier

Kyo Inoue; Takaaki Mukai; Tadashi Saitoh

Appl. Phys. Lett. 51, 1051–1053 (1987) https://doi.org/10.1063/1.99004

Abstract

View articletitled, Nearly degenerate four‐wave mixing in a traveling‐wave semiconductor laser amplifier

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Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition

T. Sanada; K. Nakai; K. Wakao; M. Kuno; S. Yamakoshi

Appl. Phys. Lett. 51, 1054–1056 (1987) https://doi.org/10.1063/1.98789

Abstract

View articletitled, Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition

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Staggered hollow‐bore CO₂ waveguide laser array

R. A. Hart; L. A. Newman; A. J. Cantor; J. T. Kennedy

Appl. Phys. Lett. 51, 1057–1059 (1987) https://doi.org/10.1063/1.98790

Abstract

View articletitled, Staggered hollow‐bore CO2 waveguide laser array

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Wavelength selective interlayer directionally grating‐coupled InP/InGaAsP waveguide photodetection

T. L. Koch; P. J. Corvini; W. T. Tsang; U. Koren; B. I. Miller

Appl. Phys. Lett. 51, 1060–1062 (1987) https://doi.org/10.1063/1.98791

Abstract

View articletitled, Wavelength selective interlayer directionally grating‐coupled InP/InGaAsP waveguide photodetection

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Narrowband, single line, 1 μs XeF laser

W. D. Kimura; Dean R. Guyer; J. F. Seamans; D. H. Ford

Appl. Phys. Lett. 51, 1063–1065 (1987) https://doi.org/10.1063/1.98792

Abstract

View articletitled, Narrowband, single line, 1 μs XeF laser

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Estimation of the thickness of thin metal sheet using laser generated ultrasound

R. J. Dewhurst; C. Edwards; A. D. W. McKie; S. B. Palmer

Appl. Phys. Lett. 51, 1066–1068 (1987) https://doi.org/10.1063/1.98793

Abstract

View articletitled, Estimation of the thickness of thin metal sheet using laser generated ultrasound

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New method to relax thermal stress in GaAs grown on Si substrates

Shiro Sakai

Appl. Phys. Lett. 51, 1069–1071 (1987) https://doi.org/10.1063/1.98794

Abstract

View articletitled, New method to relax thermal stress in GaAs grown on Si substrates

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Analysis of initial stage of Pd‐Si (111) and Au‐Si (111) interface reactions by means of high‐resolution proton energy‐loss spectroscopy

Jun‐ichi Kanasaki; Noriaki Itoh; Noriaki Matsunami

Appl. Phys. Lett. 51, 1072–1074 (1987) https://doi.org/10.1063/1.98743

Abstract

View articletitled, Analysis of initial stage of Pd‐Si (111) and Au‐Si (111) interface reactions by means of high‐resolution proton energy‐loss spectroscopy

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High‐efficiency Al_0.3Ga_0.7As solar cells grown by molecular beam epitaxy

Chikara Amano; Hideo Sugiura; Koshi Ando; Masafumi Yamaguchi; Anne Saletes

Appl. Phys. Lett. 51, 1075–1077 (1987) https://doi.org/10.1063/1.98744

Abstract

View articletitled, High‐efficiency Al0.3Ga0.7As solar cells grown by molecular beam epitaxy

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Deep level transient spectroscopy studies of epitaxial silicon layers on silicon‐on‐insulator substrates formed by oxygen implantation

P. K. McLarty; J. W. Cole; K. F. Galloway; D. E. Ioannou; S. E. Bernacki

Appl. Phys. Lett. 51, 1078–1079 (1987) https://doi.org/10.1063/1.98745

Abstract

View articletitled, Deep level transient spectroscopy studies of epitaxial silicon layers on silicon‐on‐insulator substrates formed by oxygen implantation

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Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy

I. J. Fritz

Appl. Phys. Lett. 51, 1080–1082 (1987) https://doi.org/10.1063/1.98746

Abstract

View articletitled, Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy

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Reactive ion etch process with highly controllable GaAs‐to‐AlGaAs selectivity using SF₆ and SiCl₄

S. Salimian; C. B. Cooper, III; R. Norton; J. Bacon

Appl. Phys. Lett. 51, 1083–1085 (1987) https://doi.org/10.1063/1.98747

Abstract

View articletitled, Reactive ion etch process with highly controllable GaAs‐to‐AlGaAs selectivity using SF6 and SiCl4

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Mode‐locked infrared sensor

D. D. Coon; A. G. U. Perera

Appl. Phys. Lett. 51, 1086–1088 (1987) https://doi.org/10.1063/1.98748

Abstract

View articletitled, Mode‐locked infrared sensor

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Resonant level lifetime in GaAs/AlGaAs double‐barrier structures

Thomas B. Bahder; Clyde A. Morrison; John D. Bruno

Appl. Phys. Lett. 51, 1089–1090 (1987) https://doi.org/10.1063/1.98749

Abstract

View articletitled, Resonant level lifetime in GaAs/AlGaAs double‐barrier structures

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Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures

G. P. Kothiyal; S. Hong; N. Debbar; P. K. Bhattacharya; J. Singh

Appl. Phys. Lett. 51, 1091–1093 (1987) https://doi.org/10.1063/1.98750

Abstract

View articletitled, Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures

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Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors

C. van Berkel; M. J. Powell

Appl. Phys. Lett. 51, 1094–1096 (1987) https://doi.org/10.1063/1.98751

Abstract

View articletitled, Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors

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High‐speed operation of InP metal‐insulator‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

A. Antreasyan; P. A. Garbinski; V. D. Mattera, Jr.; H. Temkin; J. H. Abeles

Appl. Phys. Lett. 51, 1097–1099 (1987) https://doi.org/10.1063/1.98752

Abstract

View articletitled, High‐speed operation of InP metal‐insulator‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

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Electrical transport and in situ x‐ray studies of the formation of TiSi₂ thin films on Si

J. C. Hensel; J. M. Vandenberg; F. C. Unterwald; A. Maury

Appl. Phys. Lett. 51, 1100–1102 (1987) https://doi.org/10.1063/1.98753

Abstract

View articletitled, Electrical transport and in situ x‐ray studies of the formation of TiSi2 thin films on Si

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Identification of an interstitial carbon‐interstitial oxygen complex in silicon

J. M. Trombetta; G. D. Watkins

Appl. Phys. Lett. 51, 1103–1105 (1987) https://doi.org/10.1063/1.98754

Abstract

View articletitled, Identification of an interstitial carbon‐interstitial oxygen complex in silicon

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NiSi₂ precipitation in nickel‐implanted silicon films

R. C. Cammarata; C. V. Thompson; K. N. Tu

Appl. Phys. Lett. 51, 1106–1108 (1987) https://doi.org/10.1063/1.99003

Abstract

View articletitled, NiSi2 precipitation in nickel‐implanted silicon films

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Chemical beam epitaxial growth of high‐purity GaAs using triethylgallium and arsine

T. H. Chiu; W. T. Tsang; E. F. Schubert; E. Agyekum

Appl. Phys. Lett. 51, 1109–1111 (1987) https://doi.org/10.1063/1.98755

Abstract

View articletitled, Chemical beam epitaxial growth of high‐purity GaAs using triethylgallium and arsine

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Pulsed laser etching of high T_c superconducting films

Arun Inam; X. D. Wu; T. Venkatesan; S. B. Ogale; C. C. Chang; D. Dijkkamp

Appl. Phys. Lett. 51, 1112–1114 (1987) https://doi.org/10.1063/1.98756

Abstract

View articletitled, Pulsed laser etching of high Tc superconducting films

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High‐temperature resistivity of the Ba₂YCu₃O_x superconductor

G. Sageev Grader; P. K. Gallagher; E. M. Gyorgy

Appl. Phys. Lett. 51, 1115–1117 (1987) https://doi.org/10.1063/1.98757

Abstract

View articletitled, High‐temperature resistivity of the Ba2YCu3Ox superconductor

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Spectroscopic evidence for passivation of the La_1.85Sr_0.15CuO₄ surface with gold

H. M. Meyer, III; T. J. Wagener; D. M. Hill; Y. Gao; S. G. Anderson; S. D. Krahn; J. H. Weaver; B. Flandermeyer; D. W. Capone, II

Appl. Phys. Lett. 51, 1118–1120 (1987) https://doi.org/10.1063/1.98758

Abstract

View articletitled, Spectroscopic evidence for passivation of the La1.85Sr0.15CuO4 surface with gold

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Electron accumulation layer at n‐Si/non‐liquid electrolyte interfaces

H. Benisty; Ph. Colomban; J.‐N. Chazalviel

Appl. Phys. Lett. 51, 1121–1123 (1987) https://doi.org/10.1063/1.98759

Abstract

View articletitled, Electron accumulation layer at n‐Si/non‐liquid electrolyte interfaces

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Roadmap on photonic metasurfaces

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Nearly degenerate four‐wave mixing in a traveling‐wave semiconductor laser amplifier

Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition

Staggered hollow‐bore CO₂ waveguide laser array

Wavelength selective interlayer directionally grating‐coupled InP/InGaAsP waveguide photodetection

Narrowband, single line, 1 μs XeF laser

Estimation of the thickness of thin metal sheet using laser generated ultrasound

New method to relax thermal stress in GaAs grown on Si substrates

Analysis of initial stage of Pd‐Si (111) and Au‐Si (111) interface reactions by means of high‐resolution proton energy‐loss spectroscopy

High‐efficiency Al_0.3Ga_0.7As solar cells grown by molecular beam epitaxy

Deep level transient spectroscopy studies of epitaxial silicon layers on silicon‐on‐insulator substrates formed by oxygen implantation

Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy

Reactive ion etch process with highly controllable GaAs‐to‐AlGaAs selectivity using SF₆ and SiCl₄

Mode‐locked infrared sensor

Resonant level lifetime in GaAs/AlGaAs double‐barrier structures

Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures

Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors

High‐speed operation of InP metal‐insulator‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

Electrical transport and in situ x‐ray studies of the formation of TiSi₂ thin films on Si

Identification of an interstitial carbon‐interstitial oxygen complex in silicon

NiSi₂ precipitation in nickel‐implanted silicon films

Chemical beam epitaxial growth of high‐purity GaAs using triethylgallium and arsine

Pulsed laser etching of high T_c superconducting films

High‐temperature resistivity of the Ba₂YCu₃O_x superconductor

Spectroscopic evidence for passivation of the La_1.85Sr_0.15CuO₄ surface with gold

Electron accumulation layer at n‐Si/non‐liquid electrolyte interfaces

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