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Volume 50, Issue 10

9 March 1987

All Issues

ISSN 0003-6951

EISSN 1077-3118

Mechanism of electroluminescence in alkaline‐earth sulfides

Richard S. Crandall

Appl. Phys. Lett. 50, 551–553 (1987) https://doi.org/10.1063/1.98131

Abstract

View articletitled, Mechanism of electroluminescence in alkaline‐earth sulfides

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Noncritically phase‐matched sum frequency generation and image up‐conversion in KNbO₃ crystals

Jean‐Claude Baumert; Peter Günter

Appl. Phys. Lett. 50, 554–556 (1987) https://doi.org/10.1063/1.98132

Abstract

View articletitled, Noncritically phase‐matched sum frequency generation and image up‐conversion in KNbO3 crystals

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Iterative method for computing the inverse Abel transform

Pablo A. Vicharelli; Walter P. Lapatovich

Appl. Phys. Lett. 50, 557–559 (1987) https://doi.org/10.1063/1.98133

Abstract

View articletitled, Iterative method for computing the inverse Abel transform

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Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH₄‐NH₃‐NF₃ mixtures

R. E. Livengood; D. W. Hess

Appl. Phys. Lett. 50, 560–562 (1987) https://doi.org/10.1063/1.98134

Abstract

View articletitled, Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4‐NH3‐NF3 mixtures

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Growth and dissolution of oxide films during laser‐assisted combustion of Ti and Zr

I. Ursu; I. N. Mihailescu; L. C. Nistor; V. S. Teodorescu; A. M. Prokhorov; V. I. Konov; V. G. Ralchenko

Appl. Phys. Lett. 50, 563–565 (1987) https://doi.org/10.1063/1.98135

Abstract

View articletitled, Growth and dissolution of oxide films during laser‐assisted combustion of Ti and Zr

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Differential scanning calorimetry study of solid‐state amorphization in multilayer thin‐film Ni/Zr

R. J. Highmore; J. E. Evetts; A. L. Greer; R. E. Somekh

Appl. Phys. Lett. 50, 566–568 (1987) https://doi.org/10.1063/1.98136

Abstract

View articletitled, Differential scanning calorimetry study of solid‐state amorphization in multilayer thin‐film Ni/Zr

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Scanning tunneling microscope as a micromechanical tool

M. A. McCord; R. F. W. Pease

Appl. Phys. Lett. 50, 569–570 (1987) https://doi.org/10.1063/1.98137

Abstract

View articletitled, Scanning tunneling microscope as a micromechanical tool

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Chemical effects in ion mixing of a ternary system (metal‐SiO₂)

T. Banwell; M‐A. Nicolet; T. Sands; P. J. Grunthaner

Appl. Phys. Lett. 50, 571–573 (1987) https://doi.org/10.1063/1.98138

Abstract

View articletitled, Chemical effects in ion mixing of a ternary system (metal‐SiO2)

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Detection and measurement of local distortions in a semiconductor layered structure by convergent‐beam electron diffraction

D. M. Maher; H. L. Fraser; C. J. Humphreys; R. V. Knoell; J. C. Bean

Appl. Phys. Lett. 50, 574–576 (1987) https://doi.org/10.1063/1.98139

Abstract

View articletitled, Detection and measurement of local distortions in a semiconductor layered structure by convergent‐beam electron diffraction

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Formation of submicron epitaxial islands of Pd₂Si on silicon

C. B. Boothroyd; W. M. Stobbs; K. N. Tu

Appl. Phys. Lett. 50, 577–579 (1987) https://doi.org/10.1063/1.98140

Abstract

View articletitled, Formation of submicron epitaxial islands of Pd2Si on silicon

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Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage

M. Satoh; K. Kuriyama; M. Yahagi; K. Iwamura; C. Kim; T. Kawakubo; K. Yoneda; I. Kimura

Appl. Phys. Lett. 50, 580–582 (1987) https://doi.org/10.1063/1.98141

Abstract

View articletitled, Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage

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Fast P‐doped silicon bolometer for detecting heat pulses

C. Boragno; U. Valbusa; G. Pignatel

Appl. Phys. Lett. 50, 583–584 (1987) https://doi.org/10.1063/1.98087

Abstract

View articletitled, Fast P‐doped silicon bolometer for detecting heat pulses

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Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel

D. S. Chemla; I. Bar‐Joseph; C. Klingshirn; D. A. B. Miller; J. M. Kuo; T. Y. Chang

Appl. Phys. Lett. 50, 585–587 (1987) https://doi.org/10.1063/1.98088

Abstract

View articletitled, Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel

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Influence of boron on tin induced interdiffusion in GaAs‐Ga_0.72Al_0.28As superlattices

E. V. K. Rao; P. Ossart; F. Alexandre; H. Thibierge

Appl. Phys. Lett. 50, 588–590 (1987) https://doi.org/10.1063/1.98089

Abstract

View articletitled, Influence of boron on tin induced interdiffusion in GaAs‐Ga0.72Al0.28As superlattices

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X‐ray photoelectron spectroscopy study of Schottky barrier formation and thermal stability of the LaB₆/GaAs(001) c (4×4) interface

Tatsuo Yokotsuka; Tadashi Narusawa; Yoko Uchida; Hisao Nakashima

Appl. Phys. Lett. 50, 591–593 (1987) https://doi.org/10.1063/1.98090

Abstract

View articletitled, X‐ray photoelectron spectroscopy study of Schottky barrier formation and thermal stability of the LaB6/GaAs(001) c (4×4) interface

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Interfacially initiated crystallization in amorphous germanium films

Hitoshi Homma; Ivan K. Schuller; Walter Sevenhans; Yvan Bruynseraede

Appl. Phys. Lett. 50, 594–596 (1987) https://doi.org/10.1063/1.98091

Abstract

View articletitled, Interfacially initiated crystallization in amorphous germanium films

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Hg_1−xMn_xTe‐CdTe superlattices grown by molecular beam epitaxy

X. Chu; S. Sivananthan; J. P. Faurie

Appl. Phys. Lett. 50, 597–599 (1987) https://doi.org/10.1063/1.98092

Abstract

View articletitled, Hg1−xMnxTe‐CdTe superlattices grown by molecular beam epitaxy

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Piezomodulated electronic spectra of semiconductor heterostructures: GaAs/Al_xGa_1−xAs quantum well structures

Y. R. Lee; A. K. Ramdas; F. A. Chambers; J. M. Meese; L. R. Ram Mohan

Appl. Phys. Lett. 50, 600–602 (1987) https://doi.org/10.1063/1.98093

Abstract

View articletitled, Piezomodulated electronic spectra of semiconductor heterostructures: GaAs/AlxGa1−xAs quantum well structures

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Determination of spatial potential fluctuations in Si and GaAs inversion layers by weak localization

P. M. Mensz; R. G. Wheeler; C. T. Foxon; J. J. Harris

Appl. Phys. Lett. 50, 603–605 (1987) https://doi.org/10.1063/1.98094

Abstract

View articletitled, Determination of spatial potential fluctuations in Si and GaAs inversion layers by weak localization

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Electronic properties of In_0.53Ga_0.47As‐InP single quantum wells grown by chemical beam epitaxy

Michel Frei; D. C. Tsui; W. T. Tsang

Appl. Phys. Lett. 50, 606–608 (1987) https://doi.org/10.1063/1.98095

Abstract

View articletitled, Electronic properties of In0.53Ga0.47As‐InP single quantum wells grown by chemical beam epitaxy

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Index‐guided Al_xGa_1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si₂)_y(GaAs)_1−y source

L. J. Guido; G. S. Jackson; W. E. Plano; K. C. Hsieh; N. Holonyak, Jr.; R. D. Burnham; J. E. Epler; R. L. Thornton; T. L. Paoli

Appl. Phys. Lett. 50, 609–611 (1987) https://doi.org/10.1063/1.98096

Abstract

View articletitled, Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source

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Importance of space‐charge effects in resonant tunneling devices

M. Cahay; M. McLennan; S. Datta; M. S. Lundstrom

Appl. Phys. Lett. 50, 612–614 (1987) https://doi.org/10.1063/1.98097

Abstract

View articletitled, Importance of space‐charge effects in resonant tunneling devices

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Optical properties of Al_xIn₁₋_xP grown by organometallic vapor phase epitaxy

D. P. Bour; J. R. Shealy; G. W. Wicks; W. J. Schaff

Appl. Phys. Lett. 50, 615–617 (1987) https://doi.org/10.1063/1.98098

Abstract

View articletitled, Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy

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Nonrandom alloying in In_0.52Al_0.48As/InP grown by molecular beam epitaxy

Won‐Pyo Hong; Pallab K. Bhattacharya; Jasprit Singh

Appl. Phys. Lett. 50, 618–620 (1987) https://doi.org/10.1063/1.98099

Abstract

View articletitled, Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy

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Dynamical states and stability of linear arrays of Josephson junctions

P. Hadley; M. R. Beasley

Appl. Phys. Lett. 50, 621–623 (1987) https://doi.org/10.1063/1.98100

Abstract

View articletitled, Dynamical states and stability of linear arrays of Josephson junctions

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Direct and accurate measurement of etch rate of polymer films under far‐UV irradiation

Sylvain Lazare; Jean Claude Soulignac; Pascal Fragnaud

Appl. Phys. Lett. 50, 624–625 (1987) https://doi.org/10.1063/1.98101

Abstract

View articletitled, Direct and accurate measurement of etch rate of polymer films under far‐UV irradiation

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Mechanism of electroluminescence in alkaline‐earth sulfides

Noncritically phase‐matched sum frequency generation and image up‐conversion in KNbO₃ crystals

Iterative method for computing the inverse Abel transform

Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH₄‐NH₃‐NF₃ mixtures

Growth and dissolution of oxide films during laser‐assisted combustion of Ti and Zr

Differential scanning calorimetry study of solid‐state amorphization in multilayer thin‐film Ni/Zr

Scanning tunneling microscope as a micromechanical tool

Chemical effects in ion mixing of a ternary system (metal‐SiO₂)

Detection and measurement of local distortions in a semiconductor layered structure by convergent‐beam electron diffraction

Formation of submicron epitaxial islands of Pd₂Si on silicon

Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage

Fast P‐doped silicon bolometer for detecting heat pulses

Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel

Influence of boron on tin induced interdiffusion in GaAs‐Ga_0.72Al_0.28As superlattices

X‐ray photoelectron spectroscopy study of Schottky barrier formation and thermal stability of the LaB₆/GaAs(001) c (4×4) interface

Interfacially initiated crystallization in amorphous germanium films

Hg_1−xMn_xTe‐CdTe superlattices grown by molecular beam epitaxy

Piezomodulated electronic spectra of semiconductor heterostructures: GaAs/Al_xGa_1−xAs quantum well structures

Determination of spatial potential fluctuations in Si and GaAs inversion layers by weak localization

Electronic properties of In_0.53Ga_0.47As‐InP single quantum wells grown by chemical beam epitaxy

Index‐guided Al_xGa_1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si₂)_y(GaAs)_1−y source

Importance of space‐charge effects in resonant tunneling devices

Optical properties of Al_xIn₁₋_xP grown by organometallic vapor phase epitaxy

Nonrandom alloying in In_0.52Al_0.48As/InP grown by molecular beam epitaxy

Dynamical states and stability of linear arrays of Josephson junctions

Direct and accurate measurement of etch rate of polymer films under far‐UV irradiation

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