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Optically pumped tunable mode‐locked Si‐doped GaAs laser
Appl. Phys. Lett. 49, 119–121 (1986)
https://doi.org/10.1063/1.97197
Narrowband grating resonator filters in InGaAsP/InP waveguides
Appl. Phys. Lett. 49, 125–127 (1986)
https://doi.org/10.1063/1.97199
Frequency response of an InGaAsP vapor phase regrown buried heterostructure laser with 18 GHz bandwidth
Appl. Phys. Lett. 49, 128–130 (1986)
https://doi.org/10.1063/1.97620
Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering
Appl. Phys. Lett. 49, 133–134 (1986)
https://doi.org/10.1063/1.97201
Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure
Appl. Phys. Lett. 49, 135–136 (1986)
https://doi.org/10.1063/1.97202
Photothermal modulation of the gap distance in scanning tunneling microscopy
Appl. Phys. Lett. 49, 137–139 (1986)
https://doi.org/10.1063/1.97203
New approach to the high quality epitaxial growth of lattice‐mismatched materials
Appl. Phys. Lett. 49, 140–142 (1986)
https://doi.org/10.1063/1.97204
Reverse‐bias current‐electric field characteristics of amorphous silicon films with blocking layers: Thickness dependence
Appl. Phys. Lett. 49, 149–151 (1986)
https://doi.org/10.1063/1.97207
Molecular beam epitaxial growth of a novel strained‐layer superlattice system: CdTe‐ZnTe
Appl. Phys. Lett. 49, 152–154 (1986)
https://doi.org/10.1063/1.97208
High photoconductive gain in GexSi1−x/Si strained‐layer superlattice detectors operating at λ=1.3 μm
Appl. Phys. Lett. 49, 155–157 (1986)
https://doi.org/10.1063/1.97209
Resonant tunneling through a double GaAs/AlAs superlattice barrier, single quantum well heterostructure
Appl. Phys. Lett. 49, 158–160 (1986)
https://doi.org/10.1063/1.97210
Observation of local lattice distortion induced by In doping in GaAs
Appl. Phys. Lett. 49, 161–163 (1986)
https://doi.org/10.1063/1.97211
Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy
Appl. Phys. Lett. 49, 164–166 (1986)
https://doi.org/10.1063/1.97212
Chemical beam epitaxial growth of extremely high quality InGaAs on InP
W. T. Tsang; A. H. Dayem; T. H. Chiu; J. E. Cunningham; E. F. Schubert; J. A. Ditzenberger; J. Shah; J. L. Zyskind; N. Tabatabaie
Appl. Phys. Lett. 49, 170–172 (1986)
https://doi.org/10.1063/1.97214
Surface photovoltage measurement of light instability of amorphous silicon films
Appl. Phys. Lett. 49, 173–175 (1986)
https://doi.org/10.1063/1.97215
Analytic Boltzmann equation approach for negative differential mobility in two‐valley semiconductors
Appl. Phys. Lett. 49, 176–178 (1986)
https://doi.org/10.1063/1.97216
Heterojunction bipolar transistor using pseudomorphic GaInAs for the base
Appl. Phys. Lett. 49, 179–180 (1986)
https://doi.org/10.1063/1.97217
Laser induced enhancement in sensitivity of polymeric nuclear track detector CR‐39
Appl. Phys. Lett. 49, 181–182 (1986)
https://doi.org/10.1063/1.97218
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.