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Volume 46, Issue 11

1 June 1985

All Issues

ISSN 0003-6951

EISSN 1077-3118

Detection of thermal waves through optical reflectance

Allan Rosencwaig; Jon Opsal; W. L. Smith; D. L. Willenborg

Appl. Phys. Lett. 46, 1013–1015 (1985) https://doi.org/10.1063/1.95794

Abstract

View articletitled, Detection of thermal waves through optical reflectance

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Temperature independent Faraday rotation near the band gap in Cd_1−xMn_xTe

Nils Kullendorff; Bertil Hök

Appl. Phys. Lett. 46, 1016–1018 (1985) https://doi.org/10.1063/1.95795

Abstract

View articletitled, Temperature independent Faraday rotation near the band gap in Cd1−xMnxTe

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KNbO₃ electro‐optic induced optical waveguide/cut‐off modulator

J.‐C. Baumert; C. Walther; P. Buchmann; H. Kaufmann; H. Melchior; P. Günter

Appl. Phys. Lett. 46, 1018–1020 (1985) https://doi.org/10.1063/1.95796

Abstract

View articletitled, KNbO3 electro‐optic induced optical waveguide/cut‐off modulator

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Optical phase conjugation with frequency up‐conversion via high‐order, nondegenerate multiwave mixing

Martial Ducloy

Appl. Phys. Lett. 46, 1020–1022 (1985) https://doi.org/10.1063/1.95797

Abstract

View articletitled, Optical phase conjugation with frequency up‐conversion via high‐order, nondegenerate multiwave mixing

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AlGaAs/GaAs melt‐etched inner stripe laser diode with self‐aligned structure

A. Watanabe; T. Yamada; K. Imanaka; H. Horikawa; Y. Kawai; M. Sakuta

Appl. Phys. Lett. 46, 1023–1025 (1985) https://doi.org/10.1063/1.95798

Abstract

View articletitled, AlGaAs/GaAs melt‐etched inner stripe laser diode with self‐aligned structure

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Observation of modulation speed enhancement, frequency modulation suppression, and phase noise reduction by detuned loading in a coupled‐cavity semiconductor laser

Kerry Vahala; Joel Paslaski; Amnon Yariv

Appl. Phys. Lett. 46, 1025–1027 (1985) https://doi.org/10.1063/1.95799

Abstract

View articletitled, Observation of modulation speed enhancement, frequency modulation suppression, and phase noise reduction by detuned loading in a coupled‐cavity semiconductor laser

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Single longitudinal mode operation of long, integrated passive cavity InGaAsP lasers

K. Matsuda; T. Fujita; J. Ohya; M. Ishino; H. Sato; H. Serizawa; J. Shibata

Appl. Phys. Lett. 46, 1028–1030 (1985) https://doi.org/10.1063/1.95800

Abstract

View articletitled, Single longitudinal mode operation of long, integrated passive cavity InGaAsP lasers

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Variable frequency picosecond optical pulse generation from laser diodes by electrical feedback

S. H. Izadpanah; J. Paslaski; Z. Rav‐Noy; S. Margalit; A. Yariv

Appl. Phys. Lett. 46, 1030–1032 (1985) https://doi.org/10.1063/1.95801

Abstract

View articletitled, Variable frequency picosecond optical pulse generation from laser diodes by electrical feedback

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High resolution infrared measurements of the OH⁻ bands in KTiOPO₄

William M. Theis; George B. Norris; Marc D. Porter

Appl. Phys. Lett. 46, 1033–1035 (1985) https://doi.org/10.1063/1.95802

Abstract

View articletitled, High resolution infrared measurements of the OH− bands in KTiOPO4

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Long wavelength InGaAsP (λ∼1.3 μm) modified multiquantum well laser

N. K. Dutta; S. G. Napholtz; R. Yen; T. Wessel; T. M. Shen; N. A. Olsson

Appl. Phys. Lett. 46, 1036–1038 (1985) https://doi.org/10.1063/1.95750

Abstract

View articletitled, Long wavelength InGaAsP (λ∼1.3 μm) modified multiquantum well laser

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Effect of coupling gas viscosity on the photoacoustic signal

P. Korpiun; B. Büchner; A. C. Tam; Y. H. Wong

Appl. Phys. Lett. 46, 1039–1041 (1985) https://doi.org/10.1063/1.95751

Abstract

View articletitled, Effect of coupling gas viscosity on the photoacoustic signal

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Methods for producing ultrahigh magnetic fields

F. S. Felber; M. A. Liberman; A. L. Velikovich

Appl. Phys. Lett. 46, 1042–1044 (1985) https://doi.org/10.1063/1.95752

Abstract

View articletitled, Methods for producing ultrahigh magnetic fields

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Switching of low density diode plasmas

E. M. Waisman; P. G. Steen; D. E. Parks; A. Wilson

Appl. Phys. Lett. 46, 1045–1047 (1985) https://doi.org/10.1063/1.95753

Abstract

View articletitled, Switching of low density diode plasmas

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Ion and radical contributions to hydrogenated amorphous silicon film formation in a dc toroidal discharge

H. Sugai; H. Toyoda; A. Yoshida; T. Okuda

Appl. Phys. Lett. 46, 1048–1050 (1985) https://doi.org/10.1063/1.95754

Abstract

View articletitled, Ion and radical contributions to hydrogenated amorphous silicon film formation in a dc toroidal discharge

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Etch rate enhancement of silicon in CF₄‐O₂ plasmas

L. K. White; Jer‐Shen Maa

Appl. Phys. Lett. 46, 1050–1052 (1985) https://doi.org/10.1063/1.95755

Abstract

View articletitled, Etch rate enhancement of silicon in CF4‐O2 plasmas

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Eutectic melting by pulsed ion beam irradiation

R. Fastow; J. W. Mayer; T. Brat; M. Eizenberg; J. O. Olowolafe

Appl. Phys. Lett. 46, 1052–1054 (1985) https://doi.org/10.1063/1.95756

Abstract

View articletitled, Eutectic melting by pulsed ion beam irradiation

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Thermal coupling of particulates to substrates

S. Utterback; F. H. Dacol; H. Ermert; R. L. Melcher

Appl. Phys. Lett. 46, 1054–1056 (1985) https://doi.org/10.1063/1.95757

Abstract

View articletitled, Thermal coupling of particulates to substrates

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Electron diffraction observation of epitaxial silicon grown on a CaF₂/Si(100) structure

Masayoshi Sasaki; Norio Hirashita; Hiroshi Onoda; Shirou Hagiwara

Appl. Phys. Lett. 46, 1056–1058 (1985) https://doi.org/10.1063/1.95758

Abstract

View articletitled, Electron diffraction observation of epitaxial silicon grown on a CaF2/Si(100) structure

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Density measurements, calorimetry, and transmission electron microscopy of icosahedral Mn₁₄Al₈₆

K. F. Kelton; T. W. Wu

Appl. Phys. Lett. 46, 1059–1060 (1985) https://doi.org/10.1063/1.95759

Abstract

View articletitled, Density measurements, calorimetry, and transmission electron microscopy of icosahedral Mn14Al86

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Localized epitaxial growth of hexagonal and tetragonal MoSi₂ on (111) Si

W. T. Lin; L. J. Chen

Appl. Phys. Lett. 46, 1061–1063 (1985) https://doi.org/10.1063/1.95760

Abstract

View articletitled, Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) Si

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Microstructure of silicon implanted with high dose oxygen ions

C. Jaussaud; J. Stoemenos; J. Margail; M. Dupuy; B. Blanchard; M. Bruel

Appl. Phys. Lett. 46, 1064–1066 (1985) https://doi.org/10.1063/1.95761

Abstract

View articletitled, Microstructure of silicon implanted with high dose oxygen ions

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Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations

D. J. Stirland; M. R. Brozel; I. Grant

Appl. Phys. Lett. 46, 1066–1068 (1985) https://doi.org/10.1063/1.95762

Abstract

View articletitled, Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations

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Photoluminescence study of InGaAs grown on InP by vapor phase epitaxy—Effects of O₂ injection and substrate orientation

Kikuo Makita; Akiko Gomyo; Kenkoh Taguchi; Tohru Suzuki

Appl. Phys. Lett. 46, 1069–1071 (1985) https://doi.org/10.1063/1.95763

Abstract

View articletitled, Photoluminescence study of InGaAs grown on InP by vapor phase epitaxy—Effects of O2 injection and substrate orientation

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Stability of (100)GaAs surfaces in aqueous solutions

D. E. Aspnes; A. A. Studna

Appl. Phys. Lett. 46, 1071–1073 (1985) https://doi.org/10.1063/1.95764

Abstract

View articletitled, Stability of (100)GaAs surfaces in aqueous solutions

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Electric field dependent cathodoluminescence of III‐V compound heterostructures: A new interface characterization technique

N. Magnea; P. M. Petroff; F. Capasso; R. A. Logan; K. Alavi; A. Y. Cho

Appl. Phys. Lett. 46, 1074–1076 (1985) https://doi.org/10.1063/1.95765

Abstract

View articletitled, Electric field dependent cathodoluminescence of III‐V compound heterostructures: A new interface characterization technique

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Raman microprobe analysis of tungsten silicide

Peter J. Codella; Fran Adar; Yung S. Liu

Appl. Phys. Lett. 46, 1076–1078 (1985) https://doi.org/10.1063/1.95766

Abstract

View articletitled, Raman microprobe analysis of tungsten silicide

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Carrier lifetime model for the optical degradation of amorphous silicon solar cells

Z E. Smith; S. Wagner; B. W. Faughnan

Appl. Phys. Lett. 46, 1078–1080 (1985) https://doi.org/10.1063/1.95767

Abstract

View articletitled, Carrier lifetime model for the optical degradation of amorphous silicon solar cells

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Epitaxial growth of (100)CdTe on (100)GaAs induced by pulsed laser evaporation

J. J. Dubowski; D. F. Williams; P. B. Sewell; P. Norman

Appl. Phys. Lett. 46, 1081–1083 (1985) https://doi.org/10.1063/1.95768

Abstract

View articletitled, Epitaxial growth of (100)CdTe on (100)GaAs induced by pulsed laser evaporation

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Molecular beam epitaxially grown circular U‐groove barrier transistor

C. Y. Chang; Y. H. Wang; W. C. Liu; S. A. Liao; K. Y. Cheng

Appl. Phys. Lett. 46, 1084–1086 (1985) https://doi.org/10.1063/1.95769

Abstract

View articletitled, Molecular beam epitaxially grown circular U‐groove barrier transistor

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Elimination of oval defects in epilayers by using chemical beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 46, 1086–1088 (1985) https://doi.org/10.1063/1.95770

Abstract

View articletitled, Elimination of oval defects in epilayers by using chemical beam epitaxy

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Effects of substrate temperature on the orientation of ultrahigh vacuum evaporate Si and Ge films

S. S. Chao; J. Gonzalez‐Hernandez; D. Martin; R. Tsu

Appl. Phys. Lett. 46, 1089–1091 (1985) https://doi.org/10.1063/1.95771

Abstract

View articletitled, Effects of substrate temperature on the orientation of ultrahigh vacuum evaporate Si and Ge films

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Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system

J. Bloch; M. Heiblum; Y. Komem

Appl. Phys. Lett. 46, 1092–1094 (1985) https://doi.org/10.1063/1.95772

Abstract

View articletitled, Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system

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Polycrystalline thin‐film Cu_2−xSe/CdS solar cell

Wen S. Chen; J. M. Stewart; R. A. Mickelsen

Appl. Phys. Lett. 46, 1095–1097 (1985) https://doi.org/10.1063/1.95773

Abstract

View articletitled, Polycrystalline thin‐film Cu2−xSe/CdS solar cell

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Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

Akira Shoji; Masahiro Aoyagi; Shin Kosaka; Fujitoshi Shinoki; Hisao Hayakawa

Appl. Phys. Lett. 46, 1098–1100 (1985) https://doi.org/10.1063/1.95774

Abstract

View articletitled, Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

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Inorganic ion beam resist for additive plating of metallic interconnects

Svend Stensig Eskildsen; Gunnar So/rensen

Appl. Phys. Lett. 46, 1101–1102 (1985) https://doi.org/10.1063/1.95775

Abstract

View articletitled, Inorganic ion beam resist for additive plating of metallic interconnects

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Mechanisms for fluorocarbon reactive ion beam etching of SiO₂ by simultaneous Auger electron spectroscopy measurements

D. J. Thomson; C. R. Helms

Appl. Phys. Lett. 46, 1103–1104 (1985) https://doi.org/10.1063/1.95776

Abstract

View articletitled, Mechanisms for fluorocarbon reactive ion beam etching of SiO2 by simultaneous Auger electron spectroscopy measurements

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Observation of electron transport in polyethylene terephthalate and the radiation hardening of dielectrics

S. R. Kurtz

Appl. Phys. Lett. 46, 1105–1107 (1985) https://doi.org/10.1063/1.95724

Abstract

View articletitled, Observation of electron transport in polyethylene terephthalate and the radiation hardening of dielectrics

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New flattening technique of iron garnet films by laser etching

Koji Ando; Norio Takeda; Naoki Koshizuka

Appl. Phys. Lett. 46, 1107–1109 (1985) https://doi.org/10.1063/1.95725

Abstract

View articletitled, New flattening technique of iron garnet films by laser etching

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Comment on ‘‘Electrodynamic explosions in liquids’’ [Appl. Phys. Lett. 46, 468 (1985)]

R. Meservey

Appl. Phys. Lett. 46, 1110 (1985) https://doi.org/10.1063/1.95726

View articletitled, Comment on ‘‘Electrodynamic explosions in liquids’’ [Appl. Phys. Lett. 46, 468 (1985)]

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