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Calorimetric interferometry using pulsed Nd‐glass laser for measurement of small absorption coefficient at 1.06 μm
Appl. Phys. Lett. 46, 913–914 (1985)
https://doi.org/10.1063/1.95818
Enhanced quantum efficiency internal photoemission detectors by grating coupling to surface plasma waves
Appl. Phys. Lett. 46, 915–917 (1985)
https://doi.org/10.1063/1.95819
3‐pJ, 82‐MHz optical logic gates in a room‐temperature GaAs‐AlGaAs multiple‐quantum‐well étalon
Appl. Phys. Lett. 46, 918–920 (1985)
https://doi.org/10.1063/1.95820
Stop‐cleaved InGaAsP lasers for monolithic optoelectronic integration
Appl. Phys. Lett. 46, 921–923 (1985)
https://doi.org/10.1063/1.95821
Coherence and focusing properties of unstable resonator semiconductor lasers
Appl. Phys. Lett. 46, 923–925 (1985)
https://doi.org/10.1063/1.95822
Power enhancement for argon II narrow tube lasers by a transverse magnetic field
Appl. Phys. Lett. 46, 925–927 (1985)
https://doi.org/10.1063/1.95925
Gain and absorption measurements of electron beam pumped, high Kr concentration KrF gas mixtures
Appl. Phys. Lett. 46, 927–929 (1985)
https://doi.org/10.1063/1.95823
Temperature dependence of the threshold of GaInAsP/InP surface emitting junction lasers
Appl. Phys. Lett. 46, 930–932 (1985)
https://doi.org/10.1063/1.95824
Domain inversion effects in Ti‐LiNbO3 integrated optical devices
Appl. Phys. Lett. 46, 933–935 (1985)
https://doi.org/10.1063/1.95825
Doppler shifted cyclotron maser radiation pumped by an asymmetric undulator
Appl. Phys. Lett. 46, 936–938 (1985)
https://doi.org/10.1063/1.95826
Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystals
Appl. Phys. Lett. 46, 941–943 (1985)
https://doi.org/10.1063/1.95828
Lateral extent of oxidation‐enhanced diffusion of phosphorus in 〈100〉 silicon
Appl. Phys. Lett. 46, 944–946 (1985)
https://doi.org/10.1063/1.95829
Use of a rapid anneal to improve CaF2:Si (100) epitaxy
Appl. Phys. Lett. 46, 947–949 (1985)
https://doi.org/10.1063/1.95830
High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen
P. L. F. Hemment; R. F. Peart; M. F. Yao; K. G. Stephens; R. J. Chater; J. A. Kilner; D. Meekison; G. R. Booker; R. P. Arrowsmith
Appl. Phys. Lett. 46, 952–954 (1985)
https://doi.org/10.1063/1.95778
Photoluminescence of organometallic vapor phase epitaxial GaInAs
Appl. Phys. Lett. 46, 955–957 (1985)
https://doi.org/10.1063/1.95779
Growth characteristics of oxide precipitates in heavily doped silicon crystals
Appl. Phys. Lett. 46, 957–959 (1985)
https://doi.org/10.1063/1.95780
Photoluminescence in CdTe grown on GaAs by metalorganic chemical vapor deposition
Appl. Phys. Lett. 46, 962–964 (1985)
https://doi.org/10.1063/1.95923
Enhancement of intensity‐dependent absorption in InP and GaAs at 1.9 μm by doping
Appl. Phys. Lett. 46, 964–966 (1985)
https://doi.org/10.1063/1.95782
Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
Appl. Phys. Lett. 46, 967–969 (1985)
https://doi.org/10.1063/1.95783
High efficiency, high modulation bandwidth (Ga,Al)As:Te,Zn light‐emitting diodes with graded band gap
Appl. Phys. Lett. 46, 978–980 (1985)
https://doi.org/10.1063/1.95787
AlGaAs/GaAs p‐i‐n photodiode/preamplifier monolithic photoreceiver integrated on a semi‐insulating GaAs substrate
Appl. Phys. Lett. 46, 981–983 (1985)
https://doi.org/10.1063/1.95924
Temperature dependence of the energy gap of InSb using nonlinear optical techniques
Appl. Phys. Lett. 46, 986–988 (1985)
https://doi.org/10.1063/1.95789
Carrier transport properties of p‐type Hg1−xCdxTe liquid phase epitaxial layers in the mixed conduction range
Appl. Phys. Lett. 46, 989–991 (1985)
https://doi.org/10.1063/1.95790
Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells
Appl. Phys. Lett. 46, 991–993 (1985)
https://doi.org/10.1063/1.95791
Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy
Appl. Phys. Lett. 46, 994–996 (1985)
https://doi.org/10.1063/1.95792
Lithium quench‐condensed microstructures and the Aharonov–Bohm effect
Appl. Phys. Lett. 46, 1000–1002 (1985)
https://doi.org/10.1063/1.95813
High‐speed electroplating of copper using the laser‐jet technique
Appl. Phys. Lett. 46, 1003–1005 (1985)
https://doi.org/10.1063/1.95814
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Color astrophotography with a 100 mm-diameter f/2 polymer flat lens
Apratim Majumder, Monjurul Meem, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.