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Cleaved‐coupled‐cavity lasers with large cavity length ratios for enhanced stability
Appl. Phys. Lett. 44, 821–823 (1984)
https://doi.org/10.1063/1.94952
Anomalous polarization characteristics of 1.3‐μm InGaAsP buried heterostructure lasers
Appl. Phys. Lett. 44, 823–825 (1984)
https://doi.org/10.1063/1.94953
Computer simulation of planar ion implanted optical waveguides in lithium niobate
Appl. Phys. Lett. 44, 828–830 (1984)
https://doi.org/10.1063/1.94955
Single‐longitudinal‐mode GaAs/GaAlAs channeled‐substrate lasers grown by molecular beam epitaxy
Appl. Phys. Lett. 44, 834–836 (1984)
https://doi.org/10.1063/1.94941
Effect of external optical feedback on the spectral properties of cleaved‐coupled‐cavity semiconductor lasers
Appl. Phys. Lett. 44, 840–842 (1984)
https://doi.org/10.1063/1.94943
Microscopic model for the ablative photodecomposition of polymers by far‐ultraviolet radiation (193 nm)
Appl. Phys. Lett. 44, 849–851 (1984)
https://doi.org/10.1063/1.94947
Ferromagnetic resonance depth profiles of magnetic tapes using frequency‐dependent photoacoustic detection
Appl. Phys. Lett. 44, 854–856 (1984)
https://doi.org/10.1063/1.94949
Effect of crystal orientation on shock initiation sensitivity of pentaerythritol tetranitrate explosive
Appl. Phys. Lett. 44, 859–861 (1984)
https://doi.org/10.1063/1.94951
Intense source of monochromatic electrons: Photoemission from GaAs
Appl. Phys. Lett. 44, 866–868 (1984)
https://doi.org/10.1063/1.94960
Mechanism of surface conduction in semi‐insulating GaAs
Appl. Phys. Lett. 44, 869–871 (1984)
https://doi.org/10.1063/1.94961
High resolution structural characterization of the amorphous‐crystalline interface in Se+‐implanted GaAs
Appl. Phys. Lett. 44, 874–876 (1984)
https://doi.org/10.1063/1.94963
Observation of anomalous electrical transport properties in MoSi2 films
Appl. Phys. Lett. 44, 876–878 (1984)
https://doi.org/10.1063/1.94964
p‐type doping in Si molecular beam epitaxy by coevaporation of boron
Appl. Phys. Lett. 44, 878–880 (1984)
https://doi.org/10.1063/1.94965
Identification of germanium and tin donors in InP
M. S. Skolnick; P. J. Dean; L. L. Taylor; D. A. Anderson; S. P. Najda; C. J. Armistead; R. A. Stradling
Appl. Phys. Lett. 44, 881–883 (1984)
https://doi.org/10.1063/1.94966
Changes in the optical reflectivity of implanted silicon as a function of implantation energy
Appl. Phys. Lett. 44, 892–894 (1984)
https://doi.org/10.1063/1.94925
Interface effects in titanium and hafnium Schottky barriers on silicon
Appl. Phys. Lett. 44, 895–897 (1984)
https://doi.org/10.1063/1.94926
Liquid phase epitaxial growth of AlGaInPAs lattice matched to GaAs
Appl. Phys. Lett. 44, 904–906 (1984)
https://doi.org/10.1063/1.94929
Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs
Appl. Phys. Lett. 44, 907–909 (1984)
https://doi.org/10.1063/1.94930
Electrical transport properties of CoSi2 and NiSi2 thin films
Appl. Phys. Lett. 44, 913–915 (1984)
https://doi.org/10.1063/1.94932
Effects of annealing on the dark conductivity and photoconductivity of rf sputtered hydrogenated amorphous silicon
Appl. Phys. Lett. 44, 916–918 (1984)
https://doi.org/10.1063/1.94933
Surface versus bulk magnetization curves in amorphous GdCo cosputtered in the presence of oxygen
Appl. Phys. Lett. 44, 927–929 (1984)
https://doi.org/10.1063/1.94937
Stabilization of n‐type silicon photoanodes against photoanodic decomposition with thin films of polyacetylene
Appl. Phys. Lett. 44, 930–932 (1984)
https://doi.org/10.1063/1.94938
Erratum: Coupled‐mode analysis of phase‐locked injection laser arrays [Appl. Phys. Lett. 44, 293 (1984)]
Appl. Phys. Lett. 44, 935 (1984)
https://doi.org/10.1063/1.94970
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Hard x-ray photoemission study of bulk single-crystalline InGaZnO4
Goro Shibata, Yunosuke Takahashi, et al.
Shining light in a heartbeat: Controlling cardiac bioelectricity with membrane-targeted photoswitches
Chiara Florindi, Giulia Simoncini, et al.