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Improvement of GaAs‐GaAlAs double‐heterostructure laser wafer by Ga1−xAlxAs buffer layer
Appl. Phys. Lett. 37, 503–505 (1980)
https://doi.org/10.1063/1.91990
Thermal diffusivity measurements using a pulsed dual‐beam thermal lens technique
Appl. Phys. Lett. 37, 505–507 (1980)
https://doi.org/10.1063/1.91991
Reciprocity between the reflection electron microscope and the low‐loss scanning electron microscope
Appl. Phys. Lett. 37, 507–510 (1980)
https://doi.org/10.1063/1.91992
Visual observations of macroscopic inhomogeneous broadening of the R1 line in ruby
Appl. Phys. Lett. 37, 510–512 (1980)
https://doi.org/10.1063/1.91993
Reduction of scattering from a glass thin‐film optical waveguide by CO2 laser annealing
Appl. Phys. Lett. 37, 512–514 (1980)
https://doi.org/10.1063/1.91994
Fast frequency modulation of a far‐infrared laser with a Schottky barrier diode
Appl. Phys. Lett. 37, 514–516 (1980)
https://doi.org/10.1063/1.91995
Elimination of dispersion‐induced distortion in infrared absorption spectra by use of photoacoustic spectroscopy
Appl. Phys. Lett. 37, 517–519 (1980)
https://doi.org/10.1063/1.91996
Sensitive in situ trace‐gas detection by photothermal deflection spectroscopy
Appl. Phys. Lett. 37, 519–521 (1980)
https://doi.org/10.1063/1.91970
Use of a concentric‐arc grating as a thin‐film spectrograph for guided waves
Appl. Phys. Lett. 37, 524–526 (1980)
https://doi.org/10.1063/1.91972
Limitations on luminance characteristics of gas‐discharge color display panels
Appl. Phys. Lett. 37, 529–530 (1980)
https://doi.org/10.1063/1.91974
Studies of an unneutral electron cloud confined in a multiple‐mirrored toroidal magnetic fielda)
Appl. Phys. Lett. 37, 531–532 (1980)
https://doi.org/10.1063/1.91975
Energy absorption and transport in layered targets irradiated by a relativistic electron beam
Appl. Phys. Lett. 37, 533–535 (1980)
https://doi.org/10.1063/1.91969
White photoluminescence of amorphous silicon‐carbon alloy prepared by glow‐discharge decomposition of tetramethylsilane
Appl. Phys. Lett. 37, 536–537 (1980)
https://doi.org/10.1063/1.91976
Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates
Appl. Phys. Lett. 37, 538–540 (1980)
https://doi.org/10.1063/1.91977
Interaction of a pulsed XeF laser with an aluminum surface
Appl. Phys. Lett. 37, 542–544 (1980)
https://doi.org/10.1063/1.91979
Hall measurements and grain‐size effects in polycrystalline silicon
Appl. Phys. Lett. 37, 544–546 (1980)
https://doi.org/10.1063/1.91980
Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films
Appl. Phys. Lett. 37, 547–549 (1980)
https://doi.org/10.1063/1.91981
Schottky barrier Ga1−xAlxAs1−ySby alloy avalanche photodetectors
Appl. Phys. Lett. 37, 550–551 (1980)
https://doi.org/10.1063/1.91982
Temperature dependence of intergrain barriers in polycrystalline semiconductor films
Appl. Phys. Lett. 37, 557–559 (1980)
https://doi.org/10.1063/1.91986
A technique for producing epitaxial films on reuseable substrates
Appl. Phys. Lett. 37, 560–562 (1980)
https://doi.org/10.1063/1.91987
Residual damage to an atomically cleaned low‐temperature‐annealed Si(100) surface
Appl. Phys. Lett. 37, 563–565 (1980)
https://doi.org/10.1063/1.91988
n‐CdS/p‐Si heterojunction solar cells
Appl. Phys. Lett. 37, 569–572 (1980)
https://doi.org/10.1063/1.91787
Field effect measurement on the film‐substrate and film‐vacuum interfaces of a‐Si:H
Appl. Phys. Lett. 37, 572–573 (1980)
https://doi.org/10.1063/1.91788
Structure of a laminar flame‐wall interface by laser Raman spectroscopy
Appl. Phys. Lett. 37, 576–578 (1980)
https://doi.org/10.1063/1.91790
Erratum: Fabrication of 300‐Å metal lines with substrate‐step techniques
Appl. Phys. Lett. 37, 579 (1980)
https://doi.org/10.1063/1.92108
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Piezoelectric phononic integrated circuits
Krishna C. Balram