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Near‐field and beam‐waist position of the semiconductor laser with a channeled‐substrate planar structure
Appl. Phys. Lett. 37, 257–260 (1980)
https://doi.org/10.1063/1.91898
All‐optical parallel logic operation using fiber laser plate for digital image processing
Appl. Phys. Lett. 37, 260–262 (1980)
https://doi.org/10.1063/1.91899
Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers
Appl. Phys. Lett. 37, 262–263 (1980)
https://doi.org/10.1063/1.91900
High‐efficiency energy extraction in backward‐wave Raman scattering
Appl. Phys. Lett. 37, 264–266 (1980)
https://doi.org/10.1063/1.91901
Picosecond pulse generation by passive mode locking of diode lasers
Appl. Phys. Lett. 37, 267–269 (1980)
https://doi.org/10.1063/1.91902
Acoustic‐zone‐plate variable‐illuminating‐angle system for acoustic microscopes
Appl. Phys. Lett. 37, 272–274 (1980)
https://doi.org/10.1063/1.91904
First results of material charging in the space environment
P. F. Mizera; H. C. Koons; E. R. Schnauss; D. R. Croley, Jr.; H. K. Alan Kan; M. S. Leung; N. John Stevens; F. Berkopec; J. Staskus; William L. Lehn; J. E. Nanewicz
Appl. Phys. Lett. 37, 276–279 (1980)
https://doi.org/10.1063/1.91905
cw far‐infrared laser scattering from a laboratory plasma
Appl. Phys. Lett. 37, 279–282 (1980)
https://doi.org/10.1063/1.91906
Ionic species in a silane plasma
Appl. Phys. Lett. 37, 282–284 (1980)
https://doi.org/10.1063/1.91907
Dynamic range of 106 in depth profiling using secondary‐ion mass spectrometry
Appl. Phys. Lett. 37, 285–287 (1980)
https://doi.org/10.1063/1.91908
Structure and compression of crystalline methane at high pressure and room temperature
Appl. Phys. Lett. 37, 288–289 (1980)
https://doi.org/10.1063/1.91909
Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy
Appl. Phys. Lett. 37, 290–292 (1980)
https://doi.org/10.1063/1.91910
Crystallization‐front velocity during scanned laser crystallization of amorphous Ge films
Appl. Phys. Lett. 37, 292–295 (1980)
https://doi.org/10.1063/1.91911
Refractory metal silicide formation induced by As+ implantation
Appl. Phys. Lett. 37, 295–298 (1980)
https://doi.org/10.1063/1.91912
Improvement of lattice site location of Ga implanted into Al after pulsed electron beam annealing
Appl. Phys. Lett. 37, 298–300 (1980)
https://doi.org/10.1063/1.91913
Studies of steam‐oxidized WSi2 by Auger sputter profiling
Appl. Phys. Lett. 37, 305–307 (1980)
https://doi.org/10.1063/1.91915
Damage gettering of Cr during the annealing of Cr and S implants in semi‐insulating GaAs
Appl. Phys. Lett. 37, 308–310 (1980)
https://doi.org/10.1063/1.91916
Orientation effect on planar GaAs Schottky barrier field effect transistors
Appl. Phys. Lett. 37, 311–313 (1980)
https://doi.org/10.1063/1.91917
New high‐resolution charge transfer x‐ray and electron beam negative resist
Appl. Phys. Lett. 37, 314–316 (1980)
https://doi.org/10.1063/1.91918
Anodic etching of p‐type silicon as a method for discriminating electrically active and inactive defects
Appl. Phys. Lett. 37, 316–318 (1980)
https://doi.org/10.1063/1.91919
1.33‐μm HgCdTe/CdTe photodiodes
Appl. Phys. Lett. 37, 318–320 (1980)
https://doi.org/10.1063/1.91920
Cd2SnO4, CdIn2O4, and Cd2GeO4 as anodes for the photoelectrolysis of water
Appl. Phys. Lett. 37, 320–322 (1980)
https://doi.org/10.1063/1.91921
In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling
Appl. Phys. Lett. 37, 322–325 (1980)
https://doi.org/10.1063/1.91922
Diffusion length determination in p‐n junction diodes and solar cells
Appl. Phys. Lett. 37, 325–327 (1980)
https://doi.org/10.1063/1.91891
Erratum: Semiconducting properties of ZnO–grain‐boundary–ZnO junctions in ceramic varistors
Appl. Phys. Lett. 37, 336 (1980)
https://doi.org/10.1063/1.92104
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Piezoelectric phononic integrated circuits
Krishna C. Balram