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Nonplanar large optical cavity GaAs/GaAlAs semiconductor laser
Appl. Phys. Lett. 35, 734–736 (1979)
https://doi.org/10.1063/1.90967
Laser fluorescence spectroscopy of atomic uranium using a pulsed hollow cathode lamp as a vapor source
Appl. Phys. Lett. 35, 737–738 (1979)
https://doi.org/10.1063/1.90968
Textured silicon: A selective absorber for solar thermal conversion
Appl. Phys. Lett. 35, 742–744 (1979)
https://doi.org/10.1063/1.90953
Frequency stabilization of 0.633‐μm line with the aid of 3.39‐μm line locked to CH4
Appl. Phys. Lett. 35, 745–747 (1979)
https://doi.org/10.1063/1.90954
Polarization‐independent optical directional coupler switch using weighted coupling
Appl. Phys. Lett. 35, 748–750 (1979)
https://doi.org/10.1063/1.90955
Electron drift velocities in N2, CO2, and (N2+CO2) laser mixtures
Appl. Phys. Lett. 35, 764–765 (1979)
https://doi.org/10.1063/1.90962
Coherent four‐wave scattering in plasmas—application to plasma diagnostics
Appl. Phys. Lett. 35, 766–768 (1979)
https://doi.org/10.1063/1.90963
Room temperature instability of electron induced defects in n‐type silicon containing germanium
Appl. Phys. Lett. 35, 769–770 (1979)
https://doi.org/10.1063/1.90970
Cyclotron resonance in n‐type In1−xGaxAsyP1−y
Appl. Phys. Lett. 35, 772–774 (1979)
https://doi.org/10.1063/1.90972
The temperature dependence of band‐to‐band Auger recombination in silicon
Appl. Phys. Lett. 35, 776–777 (1979)
https://doi.org/10.1063/1.90974
Anomalous energy dissipation of intense focused electron beam in low atomic‐number target
Appl. Phys. Lett. 35, 778–780 (1979)
https://doi.org/10.1063/1.90975
Composition measurements related to the Cu2S/ZnxCd1−xS heterojunction
Appl. Phys. Lett. 35, 780–782 (1979)
https://doi.org/10.1063/1.90976
New experimental evidence of the periodic surface structure in laser annealing
Appl. Phys. Lett. 35, 782–784 (1979)
https://doi.org/10.1063/1.90977
Imaging of dislocations in InP using transmission cathodoluminescence
Appl. Phys. Lett. 35, 784–786 (1979)
https://doi.org/10.1063/1.90978
Vapor‐phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application
Appl. Phys. Lett. 35, 787–789 (1979)
https://doi.org/10.1063/1.90952
A model of degradation mechanisms in metal‐nitride‐oxide‐semiconductor structures
Appl. Phys. Lett. 35, 790–792 (1979)
https://doi.org/10.1063/1.90979
The preparation of GaAs thin‐film optical components by molecular beam epitaxy using Si shadow masking technique
Appl. Phys. Lett. 35, 792–795 (1979)
https://doi.org/10.1063/1.90938
A monolithically integrated optical repeater
Appl. Phys. Lett. 35, 795–797 (1979)
https://doi.org/10.1063/1.90939
The influence of annealing ambient on the shrinkage kinetics of oxidation‐induced stacking faults in silicon
Appl. Phys. Lett. 35, 797–799 (1979)
https://doi.org/10.1063/1.90940
The lateral effect of oxidation on boron diffusion in 〈100〉 silicon
Appl. Phys. Lett. 35, 799–801 (1979)
https://doi.org/10.1063/1.90941
Steady‐state electron and hole space charge distribution in LPCVD silicon nitride films
Appl. Phys. Lett. 35, 802–804 (1979)
https://doi.org/10.1063/1.90942
Efficient shallow‐homojunction GaAs solar cells by molecular beam epitaxy
Appl. Phys. Lett. 35, 804–806 (1979)
https://doi.org/10.1063/1.90943
The effects of neutron irradiation on a superconducting metallic glass
Appl. Phys. Lett. 35, 815–818 (1979)
https://doi.org/10.1063/1.90947
Small changes in work function of the TiC(001) surface with chemisorption of O2 and H2O
Appl. Phys. Lett. 35, 822–823 (1979)
https://doi.org/10.1063/1.90949
Electrochromic iridium oxide films prepared by reactive sputtering
Appl. Phys. Lett. 35, 823–825 (1979)
https://doi.org/10.1063/1.90950
Erratum: Efficient conversion of surface acoustic waves in shallow gratings to bulk plate modes
Appl. Phys. Lett. 35, 828 (1979)
https://doi.org/10.1063/1.91274
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Color astrophotography with a 100 mm-diameter f/2 polymer flat lens
Apratim Majumder, Monjurul Meem, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.