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Volume 34, Issue 11

1 June 1979

All Issues

ISSN 0003-6951

EISSN 1077-3118

Monolithic (ZnO) Sezawa‐mode pn‐diode‐array memory correlator

F. C. Lo; R. L. Gunshor; R. F. Pierret

Appl. Phys. Lett. 34, 725–726 (1979) https://doi.org/10.1063/1.90672

Abstract

View articletitled, Monolithic (ZnO) Sezawa‐mode pn‐diode‐array memory correlator

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Sublimation of ionic crystals in the presence of an electrical field

M.José Yacamán; Z. A. Munir; T. Ocaña; J. P. Hirth

Appl. Phys. Lett. 34, 727–728 (1979) https://doi.org/10.1063/1.90673

Abstract

View articletitled, Sublimation of ionic crystals in the presence of an electrical field

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Prediction of anelastic loss in piezoelectric solids: Effect of geometry

Roderic S. Lakes

Appl. Phys. Lett. 34, 729–730 (1979) https://doi.org/10.1063/1.90674

Abstract

View articletitled, Prediction of anelastic loss in piezoelectric solids: Effect of geometry

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High‐current‐density relativistic electron beams in conical diodes

P. Gilad; E. Nardi; Z. Zinamon

Appl. Phys. Lett. 34, 731–732 (1979) https://doi.org/10.1063/1.90675

Abstract

View articletitled, High‐current‐density relativistic electron beams in conical diodes

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Characterization of light emission from amorphous chalcogenide switches

P. J. Walsh; D. Pooladdej; M. J. Thompson; J. Allison

Appl. Phys. Lett. 34, 733–734 (1979) https://doi.org/10.1063/1.90676

Abstract

View articletitled, Characterization of light emission from amorphous chalcogenide switches

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Lattice constants and band‐gap variations of the pentenary semiconductor system Cu_1−yAg_yInS_2(1−x)Se_2x

G. H. Chapman; J. Shewchun; J. J. Loferski; B. K. Garside; R. Beaulieu

Appl. Phys. Lett. 34, 735–737 (1979) https://doi.org/10.1063/1.90677

Abstract

View articletitled, Lattice constants and band‐gap variations of the pentenary semiconductor system Cu1−yAgyInS2(1−x)Se2x

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Pulsed‐laser annealing of ion‐implanted polycrystalline silicon films

C. P. Wu; C. W. Magee

Appl. Phys. Lett. 34, 737–739 (1979) https://doi.org/10.1063/1.90678

Abstract

View articletitled, Pulsed‐laser annealing of ion‐implanted polycrystalline silicon films

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An MOS field‐effect transistor fabricated on a molecular‐beam epitaxial silicon layer

Y. Katayama; Y. Shiraki; K. L. I. Kobayashi; K. F. Komatsubara; N. Hashimoto

Appl. Phys. Lett. 34, 740–741 (1979) https://doi.org/10.1063/1.90655

Abstract

View articletitled, An MOS field‐effect transistor fabricated on a molecular‐beam epitaxial silicon layer

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Arsenic incorporation in native oxides of GaAs grown thermally under arsenic trioxide vapor

G. P. Schwartz; J. E. Griffiths; D. DiStefano; G. J. Gualtieri; B. Schwartz

Appl. Phys. Lett. 34, 742–744 (1979) https://doi.org/10.1063/1.90656

Abstract

View articletitled, Arsenic incorporation in native oxides of GaAs grown thermally under arsenic trioxide vapor

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Electroabsorption in GaInAsP

R. H. Kingston

Appl. Phys. Lett. 34, 744–746 (1979) https://doi.org/10.1063/1.90657

Abstract

View articletitled, Electroabsorption in GaInAsP

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Correlation of electrolytic‐etch and surface‐photovoltage techniques for the detection of electrically active defects in silicon

J. L. Deines; J. W. Philbrick; M. R. Poponiak; D. B. Dove

Appl. Phys. Lett. 34, 746–748 (1979) https://doi.org/10.1063/1.90658

Abstract

View articletitled, Correlation of electrolytic‐etch and surface‐photovoltage techniques for the detection of electrically active defects in silicon

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Superstructures of submonolayer indium films on silicon (111)7 surfaces

M. Kawaji; S. Baba; A. Kinbara

Appl. Phys. Lett. 34, 748–749 (1979) https://doi.org/10.1063/1.90659

Abstract

View articletitled, Superstructures of submonolayer indium films on silicon (111)7 surfaces

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Unidentified acceptors in silicon and germanium

M. C. Ohmer; J. E. Lang

Appl. Phys. Lett. 34, 750–752 (1979) https://doi.org/10.1063/1.90660

Abstract

View articletitled, Unidentified acceptors in silicon and germanium

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GaAs‐Al_xGa_1−xAs strip‐buried‐heterostructure lasers with lateral‐evanescent‐field distributed feedback

W. T. Tsang; R. A. Logan; L. F. Johnson

Appl. Phys. Lett. 34, 752–755 (1979) https://doi.org/10.1063/1.90661

Abstract

View articletitled, GaAs‐AlxGa1−xAs strip‐buried‐heterostructure lasers with lateral‐evanescent‐field distributed feedback

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Directional coupler switch in molecular‐beam epitaxy GaAs

A. Carenco; L. Menigaux; F. Alexandre; M. Abdalla; A. Brenac

Appl. Phys. Lett. 34, 755–757 (1979) https://doi.org/10.1063/1.90662

Abstract

View articletitled, Directional coupler switch in molecular‐beam epitaxy GaAs

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Polarization‐sensitive coherent anti‐Stokes Raman spectroscopy

Jean‐Louis Oudar; Robert W. Smith; Y. R. Shen

Appl. Phys. Lett. 34, 758–760 (1979) https://doi.org/10.1063/1.90663

Abstract

View articletitled, Polarization‐sensitive coherent anti‐Stokes Raman spectroscopy

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Optoacoustic Raman gain spectroscopy of liquids

C. K. N. Patel; A. C. Tam

Appl. Phys. Lett. 34, 760–763 (1979) https://doi.org/10.1063/1.90664

Abstract

View articletitled, Optoacoustic Raman gain spectroscopy of liquids

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High critical currents in cold‐powder‐metallurgy‐processed superconducting Cu‐Nb‐Sn composites

R. Flükiger; S. Foner; E. J. McNiff, Jr.; B. B. Schwartz

Appl. Phys. Lett. 34, 763–766 (1979) https://doi.org/10.1063/1.90665

Abstract

View articletitled, High critical currents in cold‐powder‐metallurgy‐processed superconducting Cu‐Nb‐Sn composites

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Measurement of spatial distribution of long‐wavelength radiation from GaAlAs injection lasers

S. M. Abbott

Appl. Phys. Lett. 34, 766–768 (1979) https://doi.org/10.1063/1.90666

Abstract

View articletitled, Measurement of spatial distribution of long‐wavelength radiation from GaAlAs injection lasers

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Magneto‐optic current sensing with birefringent fibers

S. C. Rashleigh; R. Ulrich

Appl. Phys. Lett. 34, 768–770 (1979) https://doi.org/10.1063/1.90667

Abstract

View articletitled, Magneto‐optic current sensing with birefringent fibers

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Phenomenological theory of the acoustophotorefractive effect

Richard P. Leavitt

Appl. Phys. Lett. 34, 771–773 (1979) https://doi.org/10.1063/1.90668

Abstract

View articletitled, Phenomenological theory of the acoustophotorefractive effect

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Microbolometers for infrared detection

Tien‐Lai Hwang; S. E. Schwarz; D. B. Rutledge

Appl. Phys. Lett. 34, 773–776 (1979) https://doi.org/10.1063/1.90669

Abstract

View articletitled, Microbolometers for infrared detection

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Dynamics of Q‐switched laser annealing

D. H. Auston; J. A. Golovchenko; A. L. Simons; C. M. Surko; T. N. C. Venkatesan

Appl. Phys. Lett. 34, 777–779 (1979) https://doi.org/10.1063/1.90670

Abstract

View articletitled, Dynamics of Q‐switched laser annealing

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Ion‐implanted laser‐annealed GaAs solar cells

John C. C. Fan; Ralph L. Chapman; Joseph P. Donnelly; George W. Turner; Carl O. Bozler

Appl. Phys. Lett. 34, 780–782 (1979) https://doi.org/10.1063/1.90671

Abstract

View articletitled, Ion‐implanted laser‐annealed GaAs solar cells

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Stepped I‐V characteristics of MIS capacitors in the inversion polarity

S. Davidoff; I. Kashat; N. Klein

Appl. Phys. Lett. 34, 782–784 (1979) https://doi.org/10.1063/1.90679

Abstract

View articletitled, Stepped I‐V characteristics of MIS capacitors in the inversion polarity

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High‐field dark currents in thin CVD silicon nitride with graded interfacial composition

J. M. Andrews; B. G. Jackson; W. J. Polito

Appl. Phys. Lett. 34, 785–787 (1979) https://doi.org/10.1063/1.90680

Abstract

View articletitled, High‐field dark currents in thin CVD silicon nitride with graded interfacial composition

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Temperature sensitivity of ion‐implanted MOS capacitors

James A. Topich

Appl. Phys. Lett. 34, 787–789 (1979) https://doi.org/10.1063/1.90681

Abstract

View articletitled, Temperature sensitivity of ion‐implanted MOS capacitors

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Buried‐grid fabrication by silicon liquid‐phase epitaxy

B. Jayant Baliga

Appl. Phys. Lett. 34, 789–790 (1979) https://doi.org/10.1063/1.90682

Abstract

View articletitled, Buried‐grid fabrication by silicon liquid‐phase epitaxy

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655 mV open‐circuit voltage, 17.6% efficient silicon MIS solar cells

R. B. Godfrey; M. A. Green

Appl. Phys. Lett. 34, 790–793 (1979) https://doi.org/10.1063/1.90646

Abstract

View articletitled, 655 mV open‐circuit voltage, 17.6% efficient silicon MIS solar cells

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Increase in luminescence efficiency of Al_xGa_1−xAs grown by organometallic VPE

G. B. Stringfellow; G. Hom

Appl. Phys. Lett. 34, 794–796 (1979) https://doi.org/10.1063/1.90647

Abstract

View articletitled, Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE

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Thin‐film Mo‐Si interaction

R. J. Schutz; L. R. Testardi

Appl. Phys. Lett. 34, 797–798 (1979) https://doi.org/10.1063/1.90648

Abstract

View articletitled, Thin‐film Mo‐Si interaction

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LaF₃ insulators for MIS structures

A. Sher; W. E. Miller; Y. H. Tsuo; John A. Moriarty; R. K. Crouch; B. A. Seiber

Appl. Phys. Lett. 34, 799–801 (1979) https://doi.org/10.1063/1.90649

Abstract

View articletitled, LaF3 insulators for MIS structures

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Energy‐resolved DLTS measurement of interface states in MIS structures

N. M. Johnson

Appl. Phys. Lett. 34, 802–804 (1979) https://doi.org/10.1063/1.90650

Abstract

View articletitled, Energy‐resolved DLTS measurement of interface states in MIS structures

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Direct observation of voltage barriers in ZnO varistors

O. L. Krivanek; P. Williams; Yi‐Ching Lin

Appl. Phys. Lett. 34, 805–806 (1979) https://doi.org/10.1063/1.90651

Abstract

View articletitled, Direct observation of voltage barriers in ZnO varistors

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Al/Al₂O₃/InP MIS structures

P. N. Favennec; M. Le Contellec; H. L’Haridon; G. P. Pelous; J. Richard

Appl. Phys. Lett. 34, 807–808 (1979) https://doi.org/10.1063/1.90652

Abstract

View articletitled, Al/Al2O3/InP MIS structures

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Brillouin backscatter dependence upon pulse amplitudes, timing, target material, and geometry

B. H. Ripin; E.A. McLean

Appl. Phys. Lett. 34, 809–811 (1979) https://doi.org/10.1063/1.90653

Abstract

View articletitled, Brillouin backscatter dependence upon pulse amplitudes, timing, target material, and geometry

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Technique for profiling ¹H with 2.5‐MeV Van de Graaff accelerators

B. L. Doyle; P. S. Peercy

Appl. Phys. Lett. 34, 811–813 (1979) https://doi.org/10.1063/1.90654

Abstract

View articletitled, Technique for profiling 1H with 2.5‐MeV Van de Graaff accelerators

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