Volume 126 Issue 1 | Applied Physics Letters

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PERSPECTIVES

Modulating single molecular electron sources with light: Opportunities and challenges

Hirofumi Yanagisawa

Appl. Phys. Lett. 126, 010501 (2025) https://doi.org/10.1063/5.0235399

Abstract

View articletitled, Modulating single molecular electron sources with light: Opportunities and challenges

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CHORUS

Perspectives on various-temperature stability of p-i-n perovskite solar cells

Ying Tang; Yufang Liu; Meng Li

Appl. Phys. Lett. 126, 010502 (2025) https://doi.org/10.1063/5.0245576

Abstract

View articletitled, Perspectives on various-temperature stability of p-i-n perovskite solar cells

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PHOTONICS AND OPTOELECTRONICS

Two-color strong-field terahertz amplification in the non-identical focusing condition

Jingjing Zhao; Yizhu Zhang; Yanjun Gao; Ahai Chen; Yuhai Jiang

Appl. Phys. Lett. 126, 011101 (2025) https://doi.org/10.1063/5.0246226

Abstract

View articletitled, Two-color strong-field terahertz amplification in the non-identical focusing condition

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Overlap-scanning self-referencing diffractive imaging with enlarged field of view under incoherent illumination

Hairui Sun; Zhuoyi Wang; Yiqin Ouyang; Hao Zhang; Xingyuan Lu; Yangjian Cai; Chengliang Zhao

Appl. Phys. Lett. 126, 011102 (2025) https://doi.org/10.1063/5.0240404

Abstract

View articletitled, Overlap-scanning self-referencing diffractive imaging with enlarged field of view under incoherent illumination

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Temperature characteristics of a photoinduced blackbody in intense light fields

Hao Cui; Weiping Qin

Appl. Phys. Lett. 126, 011103 (2025) https://doi.org/10.1063/5.0245716

Abstract

View articletitled, Temperature characteristics of a photoinduced blackbody in intense light fields

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Unipolar fields produced by ultrafast optical gating of terahertz pulses

S. D. Gorelov; A. L. Novokovskaya; S. B. Bodrov; M. V. Sarafanova; M. I. Bakunov

Appl. Phys. Lett. 126, 011104 (2025) https://doi.org/10.1063/5.0243002

Abstract

View articletitled, Unipolar fields produced by ultrafast optical gating of terahertz pulses

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Observation of topological edge states in photonic bilayer SSH lattice

Bin Zhang; Weizhao Cheng; Weijie Liu; Wenchao Yan; Feng Chen

Appl. Phys. Lett. 126, 011105 (2025) https://doi.org/10.1063/5.0241042

Abstract

View articletitled, Observation of topological edge states in photonic bilayer SSH lattice

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Printing quantum dot color conversion layer in etch pits using EHD technology based on mini-LED

Xinyi Wang; Zhaoyu Chen; Haojie Zhou; Xiaoxiao Ji; Zhu Yang; Li Liu; Luqiao Yin; Jianhua Zhang

Appl. Phys. Lett. 126, 011106 (2025) https://doi.org/10.1063/5.0244782

Abstract

View articletitled, Printing quantum dot color conversion layer in etch pits using EHD technology based on mini-LED

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Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type

Simon Litschgi; Amélie Dussaigne; Frédéric Barbier; Guillaume Veux; Anthony Cibié; Bruno Gayral; Fabian Rol

Appl. Phys. Lett. 126, 011107 (2025) https://doi.org/10.1063/5.0219902

Abstract

View articletitled, Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type

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Ghost imaging through complex scattering media with random light disturbance

Yang Peng; Wen Chen

Appl. Phys. Lett. 126, 011108 (2025) https://doi.org/10.1063/5.0252090

Abstract

View articletitled, Ghost imaging through complex scattering media with random light disturbance

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Determining the optical and polaritonic properties of isotopically pure hBN using cryogenic FTIR micro-spectroscopy

In Special Collection: Mid and Long Wavelength Infrared Photonics, Materials, and Devices

Siddharth Nandanwar; Aditya Desai; S. Maryam Vaghefi Esfidani; Tristan McMillan; Eli Janzen; James H. Edgar; Thomas G. Folland

Appl. Phys. Lett. 126, 011109 (2025) https://doi.org/10.1063/5.0248232

Abstract

View articletitled, Determining the optical and polaritonic properties of isotopically pure hBN using cryogenic FTIR micro-spectroscopy

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CHORUS

SURFACES AND INTERFACES

Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy

Balasubramanian Sundarapandian; Mohit Raghuwanshi; Patrik Straňák; Yuan Yu; Haiyan Lyu; Mario Prescher; Lutz Kirste; Oliver Ambacher

Appl. Phys. Lett. 126, 011601 (2025) https://doi.org/10.1063/5.0231694

Abstract

View articletitled, Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy

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Effects of temperature on surface plasmon resonance in organic thin-film transistor

Qing He Wang; Yu Heng Deng; Yuan Xiao Ma; Lu Liu; Jing Ping Xu; P. T. Lai

Appl. Phys. Lett. 126, 011602 (2025) https://doi.org/10.1063/5.0241847

Abstract

View articletitled, Effects of temperature on surface plasmon resonance in organic thin-film transistor

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A dual-biomimetic surface with leaf-skeleton-based hierarchical structures for efficient atmospheric water harvesting

Qiyu Chen; Fabian Javier Medina; Qing Hao

Appl. Phys. Lett. 126, 011603 (2025) https://doi.org/10.1063/5.0235697

Abstract

View articletitled, A dual-biomimetic surface with leaf-skeleton-based hierarchical structures for efficient atmospheric water harvesting

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CHORUS

Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures

Xiaozhuang Lu; Qingbin Liu; Cui Yu; Shiwei Feng; Zhihong Feng; Haibing Li; Shijie Pan; Zezhao He; Xuan Li; Chuangjie Zhou

Appl. Phys. Lett. 126, 011604 (2025) https://doi.org/10.1063/5.0236087

Abstract

View articletitled, Advanced thermal boundary resistance measurement techniques for thick-film diamond heterostructures

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METASURFACES AND METAMATERIALS

3D metamaterial broadband microwave absorber covered by structural topology-based pixelated color-changing layer

Junyi Yang; Jiancun Zhao; Ye Qiu; Yining Cai; Xinting Li; Yuhao Guo; Xiaodong Wang; Ben Li; Wenli Li; Yiting Yu

Appl. Phys. Lett. 126, 011701 (2025) https://doi.org/10.1063/5.0244387

Abstract

View articletitled, 3D metamaterial broadband microwave absorber covered by structural topology-based pixelated color-changing layer

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Three-channel terahertz beam steering based on polarization multiplexed metasurfaces

Pengxuan Li; Fei Fan; Hao Wang; Dan Zhao; Jierong Cheng; Shengjiang Chang

Appl. Phys. Lett. 126, 011702 (2025) https://doi.org/10.1063/5.0246821

Abstract

View articletitled, Three-channel terahertz beam steering based on polarization multiplexed metasurfaces

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Compact high-precision Jones matrix metasurfaces for producing high-order vector vortex waves at microwave frequencies

Qian Liu; Difei Liang; Xin Yao; Haiyan Chen; Fengxia Li; Liangjun Yin; Jianliang Xie; Linbo Zhang

Appl. Phys. Lett. 126, 011703 (2025) https://doi.org/10.1063/5.0244821

Abstract

View articletitled, Compact high-precision Jones matrix metasurfaces for producing high-order vector vortex waves at microwave frequencies

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High-performance mid-infrared plasmonic bispectral routers by inverse design

Xuanxuan Li; Huayou Liu; Shiyu Yang; Li He; Zhijuan Su; Yaping Dan

Appl. Phys. Lett. 126, 011704 (2025) https://doi.org/10.1063/5.0241943

Abstract

View articletitled, High-performance mid-infrared plasmonic bispectral routers by inverse design

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An optically transparent rectifying metasurface for 2.4/5.8 GHz dual-band RF energy harvesting

Lin Dong; Liming Si; Boyang Liu; Qitao Shen; Rong Niu; Xiue Bao; Houjun Sun; Weiren Zhu

Appl. Phys. Lett. 126, 011705 (2025) https://doi.org/10.1063/5.0242451

Abstract

View articletitled, An optically transparent rectifying metasurface for 2.4/5.8 GHz dual-band RF energy harvesting

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ADVANCED MATERIALS

Electrical control of exchange bias in Fe₃GaTe₂/Fe₃GeTe₂ van der Waals heterostructures

Hongjing Chen; Yuntong Xing; Xia Wang; Guan Wang; Jinsong Wu; Aoyu Zhang; Qinghua Hao; Menghao Cai; Xiaodie Chen; Longde Li; Wenzhanhong Chen; Jun-Bo Han

Appl. Phys. Lett. 126, 011901 (2025) https://doi.org/10.1063/5.0235511

Abstract

View articletitled, Electrical control of exchange bias in Fe3GaTe2/Fe3GeTe2 van der Waals heterostructures

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450 nm light-induced upconversion ultraviolet-C photons for optical information encryption and sterilization

Lingzhu Zi; Yanmin Yang; Shiji Feng; Furong Yang; Chunzheng Wang; Leipeng Li

Appl. Phys. Lett. 126, 011902 (2025) https://doi.org/10.1063/5.0250356

Abstract

View articletitled, 450 nm light-induced upconversion ultraviolet-C photons for optical information encryption and sterilization

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Defect-engineered electrical and optoelectronic properties of WS₂ irradiated with 10 MeV protons

Donggyu Lee; Seung Jae Kwak; Joonyup Bae; Won Bo Lee; Jihyun Kim

Appl. Phys. Lett. 126, 011903 (2025) https://doi.org/10.1063/5.0248810

Abstract

View articletitled, Defect-engineered electrical and optoelectronic properties of WS2 irradiated with 10 MeV protons

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Enhanced red-light photorefractive response speed of LiNbO₃ crystals for full color holographic display

Shuolin Wang; Yidong Shan; Zhaojie Wu; Dahuai Zheng; Shiguo Liu; Hongde Liu; Yongfa Kong; Jingjun Xu

Appl. Phys. Lett. 126, 011904 (2025) https://doi.org/10.1063/5.0233431

Abstract

View articletitled, Enhanced red-light photorefractive response speed of LiNbO3 crystals for full color holographic display

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Effect of doping in small-size hybrid nanostructures for plasmonic catalysis

Igor V. Smetanin; Alexander V. Uskov; Nikolay V. Nikonorov

Appl. Phys. Lett. 126, 011905 (2025) https://doi.org/10.1063/5.0228172

Abstract

View articletitled, Effect of doping in small-size hybrid nanostructures for plasmonic catalysis

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SEMICONDUCTORS

6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF₄ plasma

Hiroshi Ohta; Yoshinobu Narita; Shota Kaneki; Toshio Kitamura; Fumimasa Horikiri; Hajime Fujikura; Shinichiro Takatani; Tomoyoshi Mishima

Appl. Phys. Lett. 126, 012101 (2025) https://doi.org/10.1063/5.0242225

Abstract

View articletitled, 6 kV GaN p–n diode fabricated by hybrid epitaxial growth with regrowth interface treated by CF4 plasma

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Reliability of NiO/β-Ga₂O₃ bipolar heterojunction

Hehe Gong; Xin Yang; Matthew Porter; Zineng Yang; Bixuan Wang; Li Li; Lan Fu; Kohei Sasaki; Han Wang; Shulin Gu; Rong Zhang; Jiandong Ye; Yuhao Zhang

Appl. Phys. Lett. 126, 012102 (2025) https://doi.org/10.1063/5.0243015

Abstract

View articletitled, Reliability of NiO/β-Ga2O3 bipolar heterojunction

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CHORUS

Low-pressure CVD grown Si-doped β-Ga₂O₃ films with promising electron mobilities and high growth rates

Saleh Ahmed Khan; Ahmed Ibreljic; Stephen Margiotta; A. F. M. Anhar Uddin Bhuiyan

Appl. Phys. Lett. 126, 012103 (2025) https://doi.org/10.1063/5.0245559

Abstract

View articletitled, Low-pressure CVD grown Si-doped β-Ga2O3 films with promising electron mobilities and high growth rates

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Tunable interfacial Rashba spin–orbit coupling in asymmetric Al_xIn_1−xSb/InSb/CdTe quantum well heterostructures

Zhenghang Zhi; Yuyang Wu; Hanzhi Ruan; Jiuming Liu; Puyang Huang; Shan Yao; Xinqi Liu; Chenjia Tang; Qi Yao; Lu Sun; Yifan Zhang; Yujie Xiao; Renchao Che; Xufeng Kou

Appl. Phys. Lett. 126, 012104 (2025) https://doi.org/10.1063/5.0233964

Abstract

View articletitled, Tunable interfacial Rashba spin–orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures

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Dielectric reliability and interface trap characterization in MOCVD grown in situ Al₂O₃ on $β$ -Ga₂O₃

Saurav Roy; Arkka Bhattacharyya; Carl Peterson; Sriram Krishnamoorthy

Appl. Phys. Lett. 126, 012105 (2025) https://doi.org/10.1063/5.0234267

Abstract

View articletitled, Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β</mi></math>-Ga2O3

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Phase stability and transition behaviors of (Bi_xIn₁₋_x)₂Se₃ alloy

Huachun Wang; Xuefen Cai; Wei Li; Bin Wang; Igor Evangelista; Anderson Janotti

Appl. Phys. Lett. 126, 012106 (2025) https://doi.org/10.1063/5.0243242

Abstract

View articletitled, Phase stability and transition behaviors of (BixIn1−x)2Se3 alloy

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CHORUS

Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes

Makoto Kawano; Carlos Cunha; Kazuyuki Hirama; Kazuhide Kumakura; Yoshitaka Taniyasu

Appl. Phys. Lett. 126, 012107 (2025) https://doi.org/10.1063/5.0234753

Abstract

View articletitled, Ferromagnetic permalloy/p-type boron-doped diamond Schottky barrier diodes

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Formation of high-quality SiO₂/β-Ga₂O₃(001) MOS structures: The role of post-deposition annealing

Takuma Kobayashi; Kensei Maeda; Masahiro Hara; Mikito Nozaki; Heiji Watanabe

Appl. Phys. Lett. 126, 012108 (2025) https://doi.org/10.1063/5.0245289

Abstract

View articletitled, Formation of high-quality SiO2/β-Ga2O3(001) MOS structures: The role of post-deposition annealing

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Heteroatomic doping induces charge rearrangement to optimize carrier dynamics in 2D halide perovskites

Jixiang Zhou; Jing Yang; Xueke Yu; Yongfeng Liu; Si Zhou; Jijun Zhao; Wei Pei

Appl. Phys. Lett. 126, 012109 (2025) https://doi.org/10.1063/5.0239895

Abstract

View articletitled, Heteroatomic doping induces charge rearrangement to optimize carrier dynamics in 2D halide perovskites

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Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlO_x-based charge-trapping layer dielectric and in situ O₃ treatment

Fangzhou Du; Yang Jiang; Peiran Wang; Kangyao Wen; Chuying Tang; Jiaqi He; Chenkai Deng; Yi Zhang; Mujun Li; Xiaohui Wang; Qiaoyu Hu; Wenyue Yu; Qing Wang; HongYu Yu

Appl. Phys. Lett. 126, 012110 (2025) https://doi.org/10.1063/5.0232630

Abstract

View articletitled, Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment

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The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga₂O₃ Schottky barrier diodes

Jinyang Liu; Song He; Guangwei Xu; Weibing Hao; Xuanze Zhou; Zheyang Zheng; Shibing Long

Appl. Phys. Lett. 126, 012111 (2025) https://doi.org/10.1063/5.0244107

Abstract

View articletitled, The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes

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A 614 MW/cm² AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

Heyuan Chen; Tao Zhang; Huake Su; Xiangdong Li; Shengrui Xu; Yachao Zhang; Ruowei Liu; Lei Xie; Yue Hao; Jincheng Zhang

Appl. Phys. Lett. 126, 012112 (2025) https://doi.org/10.1063/5.0248171

Abstract

View articletitled, A 614 MW/cm2 AlGaN-channel Schottky barrier diode with high breakdown voltage and high temperature sensitivity

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PHONONIC, ACOUSTIC, AND THERMAL PROPERTIES

In situ determination of the optical axis orientation in a single grain using time-domain Brillouin microscopy

M. Lejman; G. Vaudel; V. Juvé; M. C. Weber; I. C. Infante; B. Dkhil; V. Gusev; P. Ruello

Appl. Phys. Lett. 126, 012201 (2025) https://doi.org/10.1063/5.0245340

Abstract

View articletitled, In situ determination of the optical axis orientation in a single grain using time-domain Brillouin microscopy

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Theoretical analysis of thermal conductivities of water and heavy water based on thermal resistance network model

Sijing Sun; Qingxuan Wang; Saqlain Raza; Dengke Ma; Tsuneyoshi Nakayama; Jun Liu; Jun Zhou

Appl. Phys. Lett. 126, 012202 (2025) https://doi.org/10.1063/5.0239480

Abstract

View articletitled, Theoretical analysis of thermal conductivities of water and heavy water based on thermal resistance network model

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Topological sonic whispering gallery protected by the synthetic Weyl points

Zhennan Wang; Zixin Huang; Chengxin Deng; Yuzhen Yang; Xu Zhang; Yiqin Yang; Han Jia; Yingjian Yu; Rongli Wang; Hai Yang

Appl. Phys. Lett. 126, 012203 (2025) https://doi.org/10.1063/5.0242798

Abstract

View articletitled, Topological sonic whispering gallery protected by the synthetic Weyl points

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MAGNETICS AND SPINTRONICS

Field-free spin–orbit switching of canted magnetization in Pt/Co/Ru/RuO₂(101) multilayers

Yunzhuo Wu; Tong Wu; Haoran Chen; Yongwei Cui; Hongyue Xu; Nan Jiang; Zhen Cheng; Yizheng Wu

Appl. Phys. Lett. 126, 012401 (2025) https://doi.org/10.1063/5.0246672

Abstract

View articletitled, Field-free spin–orbit switching of canted magnetization in Pt/Co/Ru/RuO2(101) multilayers

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Imprinting of stochastic magnetic domain configurations by fluctuating interlayer coupling

Mangyuan Ma; Le Zhao; Wanjun Jiang

Appl. Phys. Lett. 126, 012402 (2025) https://doi.org/10.1063/5.0245044

Abstract

View articletitled, Imprinting of stochastic magnetic domain configurations by fluctuating interlayer coupling

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Ultrafast manipulation of Néel-type merons using electric field pulses

Jiyong Kang; Dongxing Yu; Yaojin Li; Chenglong Jia

Appl. Phys. Lett. 126, 012403 (2025) https://doi.org/10.1063/5.0235596

Abstract

View articletitled, Ultrafast manipulation of Néel-type merons using electric field pulses

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Hydrogen-mediated control of magnetic anisotropy and magnetic domain structure in Co/Pd multilayer

Yan-Ru Chu; Xi-Wei Lu; Chun-Tse Hsieh; Chun-Yen Huang; Po-Hsiang Hsu; Li-Jie Liaw; Chak-Ming Liu; Wen-Chin Lin

Appl. Phys. Lett. 126, 012404 (2025) https://doi.org/10.1063/5.0242410

Abstract

View articletitled, Hydrogen-mediated control of magnetic anisotropy and magnetic domain structure in Co/Pd multilayer

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SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

Millikelvin Nb nanoSQUID-embedded tunable resonator fabricated with a neon focused-ion-beam

Jamie A. Potter; Laith Meti; Gemma Chapman; Ed Romans; John Gallop; Ling Hao

Appl. Phys. Lett. 126, 012601 (2025) https://doi.org/10.1063/5.0230505

Abstract

View articletitled, Millikelvin Nb nanoSQUID-embedded tunable resonator fabricated with a neon focused-ion-beam

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Photon number-resolving aluminum kinetic inductance detectors

X. Dai; H. Wang; Y. Wang; Z. Mai; Z. Shi; Y.-F. Wang; H. Jia; J. Liu; Q. He; M. Dai; P. Ouyang; Y. Chai; L.-F. Wei; L. Zhang; Y. Zhong; W. Guo; S. Liu; D. Yu

Appl. Phys. Lett. 126, 012602 (2025) https://doi.org/10.1063/5.0234649

Abstract

View articletitled, Photon number-resolving aluminum kinetic inductance detectors

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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

Dynamic domain motion enhancing electro-optic performance in ferroelectric films

Shinya Kondo; Kazuki Okamoto; Osami Sakata; Takashi Teranishi; Akira Kishimoto; Takanori Nagasaki; Tomoaki Yamada

Appl. Phys. Lett. 126, 012901 (2025) https://doi.org/10.1063/5.0244707

Abstract

View articletitled, Dynamic domain motion enhancing electro-optic performance in ferroelectric films

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Torsion-induced rapid switching and tunability of multistable state ferroelectric polarization

Boyu Zuo; Xuhui Lou; Yu Chen; Wentao Jiang; Qingyuan Wang; Haidong Fan; Chuan Qiao; Xiaobao Tian

Appl. Phys. Lett. 126, 012902 (2025) https://doi.org/10.1063/5.0238011

Abstract

View articletitled, Torsion-induced rapid switching and tunability of multistable state ferroelectric polarization

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Coupling of photoluminescence and flexoelectricity in all-inorganic flexible transparent heterojunctions induced by mechanical strain

Tinghong Yang; Hao Gu; Xinyan Zhang; Mengli Chen; Zishuo Li; Baoming Liu; Hongqing Chen; Deyang Chen; Hailing Sun

Appl. Phys. Lett. 126, 012903 (2025) https://doi.org/10.1063/5.0242146

Abstract

View articletitled, Coupling of photoluminescence and flexoelectricity in all-inorganic flexible transparent heterojunctions induced by mechanical strain

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Giant electrostriction in textured La₂Ce₂O₇ ceramics: A promising lead-free alternative for electromechanical conversion

Mikhail V. Talanov; Mikhail A. Marakhovsky; Annu Kumar Lakshya; Anirban Chowdhury

Appl. Phys. Lett. 126, 012904 (2025) https://doi.org/10.1063/5.0242385

Abstract

View articletitled, Giant electrostriction in textured La2Ce2O7 ceramics: A promising lead-free alternative for electromechanical conversion

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Visualization of the phonon evolution behavior in NaNbO₃ single crystal during field-induced phase transition by in situ Raman spectroscopy

L. G. Wang; X. L. Jiang; C. M. Zhu; G. B. Yu; X. F. Su; M. Y. Qin; S. Lu; N. Shen; X. X. Zheng

Appl. Phys. Lett. 126, 012905 (2025) https://doi.org/10.1063/5.0243467

Abstract

View articletitled, Visualization of the phonon evolution behavior in NaNbO3 single crystal during field-induced phase transition by in situ Raman spectroscopy

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Observation of flexoelectric effect in PECVD silicon nitride

B. H. Nguyen; C. Wu; P. Czarnecki; V. Rochus

Appl. Phys. Lett. 126, 012906 (2025) https://doi.org/10.1063/5.0244972

Abstract

View articletitled, Observation of flexoelectric effect in PECVD silicon nitride

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Large piezoelectric response in paraelectric region of PMN-32PT near morphotropic phase boundary

Moussa Kangama; Zhengwang He; Xiaoming Chen; Xiangdong Ding; Turab Lookman; Oktay Aktas

Appl. Phys. Lett. 126, 012907 (2025) https://doi.org/10.1063/5.0239226

Abstract

View articletitled, Large piezoelectric response in paraelectric region of PMN-32PT near morphotropic phase boundary

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Control of structural phase transition and energy storage behavior through cooling rate in (Bi_0.5Na_0.5)TiO₃–BaTiO₃ ceramics

Yuri Ohshima; Yuta Ochiai; Yuka Takagi; Hyunwook Nam; Hajime Nagata

Appl. Phys. Lett. 126, 012908 (2025) https://doi.org/10.1063/5.0239629

Abstract

View articletitled, Control of structural phase transition and energy storage behavior through cooling rate in (Bi0.5Na0.5)TiO3–BaTiO3 ceramics

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Fragmented charged domain wall below the tetragonal-orthorhombic phase transition in BaTiO₃

Petr S. Bednyakov; Iegor Rafalovskyi; Jiří Hlinka

Appl. Phys. Lett. 126, 012909 (2025) https://doi.org/10.1063/5.0247479

Abstract

View articletitled, Fragmented charged domain wall below the tetragonal-orthorhombic phase transition in BaTiO3

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LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS

Multihyperuniformity in high-entropy MXenes

Yu Liu; Mohan Chen

Appl. Phys. Lett. 126, 013101 (2025) https://doi.org/10.1063/5.0246719

Abstract

View articletitled, Multihyperuniformity in high-entropy MXenes

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Coexistence of multiple electronic and phononic nodal lines in a two-dimensional macroporous carbon material

Weixiang Kong; Juan Wei; Xiaoliang Xiao; Rui Wang; Xiaozhi Wu

Appl. Phys. Lett. 126, 013102 (2025) https://doi.org/10.1063/5.0245025

Abstract

View articletitled, Coexistence of multiple electronic and phononic nodal lines in a two-dimensional macroporous carbon material

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Reduced sound velocity in PbZrO₃ thin film during antiferroelectric to ferroelectric transition revealed by picosecond acoustics

Shuai Wang; Yangyang Si; Wenjun Wang; Yijie Li; Zuhuang Chen; Feng He

Appl. Phys. Lett. 126, 013103 (2025) https://doi.org/10.1063/5.0244418

Abstract

View articletitled, Reduced sound velocity in PbZrO3 thin film during antiferroelectric to ferroelectric transition revealed by picosecond acoustics

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Single resonant cavity enhances the second harmonic generation of layered ferroelectric NbOCl₂

Mengyuan Jia; Junyang Chen; Xiaohua Wu; Xuexuan Qu; Mingyuan Huang

Appl. Phys. Lett. 126, 013104 (2025) https://doi.org/10.1063/5.0246745

Abstract

View articletitled, Single resonant cavity enhances the second harmonic generation of layered ferroelectric NbOCl2

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Ferroelectric polarizations engineered reversible skyrmion–bimeron switch in van der Waals heterostructure RuClBr/Ga₂S₃

Yong Lei; Wei Sun; Xianghong Niu; Wenqi Zhou; Xueke Yu; Yongjun Liu; Xiuyun Zhang

Appl. Phys. Lett. 126, 013105 (2025) https://doi.org/10.1063/5.0242362

Abstract

View articletitled, Ferroelectric polarizations engineered reversible skyrmion–bimeron switch in van der Waals heterostructure RuClBr/Ga2S3

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DEVICE PHYSICS AND NANOTECHNOLOGY

High-efficiency perovskite light-emitting diodes enabled by introducing a LiF modification layer

Xulan Xue; Zhibo Zhao; Huidan Zhang; Xingchen Lin; Yongqiang Ning; Lijun Wang; Wenyu Ji; Hongbo Zhu

Appl. Phys. Lett. 126, 013501 (2025) https://doi.org/10.1063/5.0239423

Abstract

View articletitled, High-efficiency perovskite light-emitting diodes enabled by introducing a LiF modification layer

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Optoelectronic synapse based on the Bi₂O₂Se/Cs₃Cu₂I₅ heterojunction for neuromorphic computing

Jinwen Lin; Bin Li; Zheng Yin; Sicheng Wan; Yao Meng; Hong Zhou; Fangliang Gao; Shuti Li; Yong Zhang; Qingbing Zha; Jinhua Li; Said Nasir Khisro; Xinman Chen

Appl. Phys. Lett. 126, 013502 (2025) https://doi.org/10.1063/5.0236853

Abstract

View articletitled, Optoelectronic synapse based on the Bi2O2Se/Cs3Cu2I5 heterojunction for neuromorphic computing

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Synaptic transistor based on reversible hydrogenation of graphene channel

Yiqian Hu; Lei Huang; Quanhong Chang; Xun Peng; Gujin Hu; Wangzhou Shi

Appl. Phys. Lett. 126, 013503 (2025) https://doi.org/10.1063/5.0235465

Abstract

View articletitled, Synaptic transistor based on reversible hydrogenation of graphene channel

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Demonstration of asymmetric Hebbian learning based on analog resistive switching in Ag/Co₃O₄/p-Si memristor

Indranil Maity; Richa Bharti; A. K. Mukherjee; Ajay D. Thakur

Appl. Phys. Lett. 126, 013504 (2025) https://doi.org/10.1063/5.0235922

Abstract

View articletitled, Demonstration of asymmetric Hebbian learning based on analog resistive switching in Ag/Co3O4/p-Si memristor

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Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga₂O₃ MOSFETs

Haiwen Xu; Jishen Zhang; Xiao Gong

Appl. Phys. Lett. 126, 013505 (2025) https://doi.org/10.1063/5.0237715

Abstract

View articletitled, Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga2O3 MOSFETs

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${Rb}_{2} {Ti}_{2} O_{5}$ ⁠: A layered ionic conductor at the sub-micrometer scale

Valerio Digiorgio; Karen Sobnath; Maria Luisa Della Rocca; Clément Barraud; Rémi Federicci; Armel Descamps-Mandine; Brigitte Leridon

Appl. Phys. Lett. 126, 013506 (2025) https://doi.org/10.1063/5.0225828

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Rb</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Ti</mtext></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>5</mn></msub></mrow></math>⁠: A layered ionic conductor at the sub-micrometer scale

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Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfO_x memristors

Yuanyuan Zhu; Yufei Zhang; Shuning Yang; Xiaoyu Ma; Hongbing Lu; Yuebo Liu; Daobin Luo; Youqing Wang; Jing Zhou; Hongjun Wang

Appl. Phys. Lett. 126, 013507 (2025) https://doi.org/10.1063/5.0240368

Abstract

View articletitled, Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors

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Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

Hongyuan Zhao; Jiangni Yun; Linwei Yao; Lin Zhang; Jinyuan Liu; Junfeng Yan; Lei Zheng; Peng Kang; Wu Zhao; Zhiyong Zhang

Appl. Phys. Lett. 126, 013508 (2025) https://doi.org/10.1063/5.0242551

Abstract

View articletitled, Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

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E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks

Jiangnan Liu; Ding Wang; Md Tanvir Hasan; Shubham Mondal; Jason Manassa; Jeremy M. Shen; Danhao Wang; Md Mehedi Hasan Tanim; Samuel Yang; Robert Hovden; Zetian Mi

Appl. Phys. Lett. 126, 013509 (2025) https://doi.org/10.1063/5.0217732

Abstract

View articletitled, E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks

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CHORUS

Tunneling effect in quantum-dot light-emitting diodes

Rongmei Yu; Jinbing Cheng; Yingying Lu; Chunying Pu; Ting Wang; Wenyu Ji

Appl. Phys. Lett. 126, 013510 (2025) https://doi.org/10.1063/5.0246824

Abstract

View articletitled, Tunneling effect in quantum-dot light-emitting diodes

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ENERGY CONVERSION AND STORAGE

Multi-field coupling challenges the stability test of silicon solar cells

Na Wang; Qi Deng; Xuehui Gu; Xiaohua Xu; Su Zhou; Chen Yang; Jiakai Liu; Fanying Meng; Liping Zhang; Zhengxin Liu; Jian Yu; Wenzhu Liu

Appl. Phys. Lett. 126, 013901 (2025) https://doi.org/10.1063/5.0245800

Abstract

View articletitled, Multi-field coupling challenges the stability test of silicon solar cells

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QUANTUM TECHNOLOGIES

4780 nm ultra-broadband entangled biphotons from a chirped PPLN

In Special Collection: Mid and Long Wavelength Infrared Photonics, Materials, and Devices

Wen-Xin Zhu; Rui-Bo Jin

Appl. Phys. Lett. 126, 014001 (2025) https://doi.org/10.1063/5.0237968

Abstract

View articletitled, 4780 nm ultra-broadband entangled biphotons from a chirped PPLN

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INTERDISCIPLINARY APPLIED PHYSICS

Flexible 3ω sensors on submicron-thick parylene substrates for thermal conductivity measurements of liquids and soft materials

Ryuto Yamasaki; Yuki Matsunaga; Yuki Akura; Masaki Shimofuri; Amit Banerjee; Toshiyuki Tsuchiya; Jun Hirotani

Appl. Phys. Lett. 126, 014101 (2025) https://doi.org/10.1063/5.0239596

Abstract

View articletitled, Flexible 3ω sensors on submicron-thick parylene substrates for thermal conductivity measurements of liquids and soft materials

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CHORUS

Method to avoid crosstalk for induced flow acceleration in multi-stage dielectric barrier discharge plasma actuators

Yoshinobu Nakamura; Takayasu Fujino; Takehiko Segawa

Appl. Phys. Lett. 126, 014102 (2025) https://doi.org/10.1063/5.0245011

Abstract

View articletitled, Method to avoid crosstalk for induced flow acceleration in multi-stage dielectric barrier discharge plasma actuators

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Mechanism of voltage frequency influence on vibration and discharge characteristics of water droplet attached to electrode

Yuxin Liu; Bo Zhang; Jinliang He

Appl. Phys. Lett. 126, 014103 (2025) https://doi.org/10.1063/5.0245822

Abstract

View articletitled, Mechanism of voltage frequency influence on vibration and discharge characteristics of water droplet attached to electrode

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A circuit simulation model for resistive random-access memory devices based on CsBi₃I₁₀ perovskite thin films

Guoshu Dai; Haodong Lu; Xiaomei Chen; Zeren Rong; Huiyan Huang; Guanyao Zhu; Zhen Liu

Appl. Phys. Lett. 126, 014104 (2025) https://doi.org/10.1063/5.0233930

Abstract

View articletitled, A circuit simulation model for resistive random-access memory devices based on CsBi3I10 perovskite thin films

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Synthetic frequency dimension in a spatiotemporally driven phononic ring resonator

Minwook Kyung; Jagang Park; Yung Kim; Kyungmin Lee; Bumki Min

Appl. Phys. Lett. 126, 014105 (2025) https://doi.org/10.1063/5.0228315

Abstract

View articletitled, Synthetic frequency dimension in a spatiotemporally driven phononic ring resonator

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ERRATA

Erratum: “MOCVD growth of β-Ga₂O₃ with fast growth rates (>4.3 μm/h), low controllable doping, and superior transport properties” [Appl. Phys. Lett. 125, 242106 (2024)]

Dong Su Yu; Lingyu Meng; Hongping Zhao

Appl. Phys. Lett. 126, 019901 (2025) https://doi.org/10.1063/5.0253537

Extract

View articletitled, Erratum: “MOCVD growth of β-Ga2O3 with fast growth rates (>4.3 μm/h), low controllable doping, and superior transport properties” [Appl. Phys. Lett. 125, 242106 (2024)]

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Issues

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PERSPECTIVES

PHOTONICS AND OPTOELECTRONICS

SURFACES AND INTERFACES

METASURFACES AND METAMATERIALS

ADVANCED MATERIALS

SEMICONDUCTORS

PHONONIC, ACOUSTIC, AND THERMAL PROPERTIES

MAGNETICS AND SPINTRONICS

SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS

DEVICE PHYSICS AND NANOTECHNOLOGY

ENERGY CONVERSION AND STORAGE

QUANTUM TECHNOLOGIES

INTERDISCIPLINARY APPLIED PHYSICS

ERRATA

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