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Perspectives on MXene-PZT based ferroelectric memristor in computation in memory applications
Excitons dynamic modulation by tailoring size of high-entropy Mo0.64W0.36S2 alloy
Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensional semiconductors
Atomic gravimeter robust to environmental effects
Issues
PERSPECTIVES
Perspectives on MXene-PZT based ferroelectric memristor in computation in memory applications
Miaocheng Zhang; Yixin Wei; Cheng Liu; Zixuan Ding; Xin Liang; Sen Ming; Yu Wang; Weijing Shao; Ertao Hu; Xinpeng Wang; Yerong Zhang; Minggao Zhang; Jianguang Xu; Yi Tong
Appl. Phys. Lett. 123, 060501 (2023)
https://doi.org/10.1063/5.0159338
PHOTONICS AND OPTOELECTRONICS
Stable electroluminescence in ambipolar dopant-free lateral p–n junctions
Lin Tian; Francois Sfigakis; Arjun Shetty; Ho-Sung Kim; Nachiket Sherlekar; Sara Hosseini; Man Chun Tam; Brad van Kasteren; Brandon Buonacorsi; Zach Merino; Stephen R. Harrigan; Zbigniew Wasilewski; Jonathan Baugh; Michael E. Reimer
Appl. Phys. Lett. 123, 061102 (2023)
https://doi.org/10.1063/5.0160792
Parametric amplification induced giant nonreciprocal unconventional photon blockade in a single microring resonator
Appl. Phys. Lett. 123, 061103 (2023)
https://doi.org/10.1063/5.0158334
Excitons dynamic modulation by tailoring size of high-entropy Mo0.64W0.36S2 alloy
In Special Collection:
2024 Rising Stars Collection
Jianlong Kang; Yiduo Wang; Li Zhou; Omar A. Al-Hartomy; S. Wageh; Yingwei Wang; Han Zhang; Si Xiao; Jun He
Appl. Phys. Lett. 123, 061107 (2023)
https://doi.org/10.1063/5.0151716
SWIR anti-reflective nanostructures on nonlinear crystals by direct UV femtosecond laser printing
Sergey Syubaev; Evgeny Modin; Stanislav Gurbatov; Artem Cherepakhin; Alexandr Dostovalov; Aleksandra Tarasova; Pavel Krinitsin; Alexander Yelisseyev; Ludmila Isaenko; Aleksandr Kuchmizhak
Appl. Phys. Lett. 123, 061108 (2023)
https://doi.org/10.1063/5.0159719
Two-well injector direct-phonon terahertz quantum cascade lasers
Appl. Phys. Lett. 123, 061109 (2023)
https://doi.org/10.1063/5.0155250
Generating tunable multi-orbital angular momentum mode vortex beams by intracavity edge diffraction modulation
Appl. Phys. Lett. 123, 061110 (2023)
https://doi.org/10.1063/5.0158966
All-plasmonic-metal chiral nanostructures fabricated by circularly polarized light
Appl. Phys. Lett. 123, 061111 (2023)
https://doi.org/10.1063/5.0155834
High-temperature photon-type ultra-broadband detectors based on ratchet structure
X. H. Li; S. H. Huang; Q. Yu; X. Yuan; Y. Liu; P. Bai; W. J. Song; H. Z. Bai; G. Y. Xu; W. Z. Shen; Y. H. Zhang
Appl. Phys. Lett. 123, 061112 (2023)
https://doi.org/10.1063/5.0153025
Metal–dielectric optical microcavity with tunable Q factor
G. A. Romanenko; P. S. Pankin; D. S. Buzin; D. N. Maksimov; V. S. Sutormin; A. I. Krasnov; F. V. Zelenov; A. N. Masyugin; S. V. Nedelin; N. A. Zolotovskiy; I. A. Tambasov; M. N. Volochaev; K.-P. Chen; I. V. Timofeev
Appl. Phys. Lett. 123, 061113 (2023)
https://doi.org/10.1063/5.0157430
SURFACES AND INTERFACES
Effect of passivation on buried interface of CsPbI2Br perovskite films
Xingming Yang; Junjie Jiang; Cuiping Xu; Peiqi Ji; Ziyi Xu; Ligang Ma; Hongling Cai; Fengming Zhang; Xiaoshan Wu
Appl. Phys. Lett. 123, 061601 (2023)
https://doi.org/10.1063/5.0152782
Ice adhesion mechanism on the patterned surface of aluminum matrix and array graphene based on molecular dynamics simulations
In Special Collection:
Superhydrophobic Surfaces
Appl. Phys. Lett. 123, 061602 (2023)
https://doi.org/10.1063/5.0160197
Suppressing the pancake bouncing induced secondary contact on superhydrophobic surfaces via jet splash
In Special Collection:
Superhydrophobic Surfaces
Appl. Phys. Lett. 123, 061603 (2023)
https://doi.org/10.1063/5.0160308
Re-spreading behavior of droplet impact on superhydrophobic surfaces at low Weber numbers
In Special Collection:
Superhydrophobic Surfaces
Appl. Phys. Lett. 123, 061604 (2023)
https://doi.org/10.1063/5.0160263
METASURFACES AND METAMATERIALS
Active dual-control terahertz electromagnetically induced transparency analog in VO2 metasurface
Appl. Phys. Lett. 123, 061701 (2023)
https://doi.org/10.1063/5.0158754
Wideband optical edge detection based on dielectric metasurface
Xinyi Bi; Xuyue Guo; Xuanguang Wu; Xinhao Fan; Bingyan Wei; Dandan Wen; Sheng Liu; Jianlin Zhao; Peng Li
Appl. Phys. Lett. 123, 061702 (2023)
https://doi.org/10.1063/5.0161145
SEMICONDUCTORS
Effects of lattice distortion and amount of d electrons on the pressure-driven structural phase transition in ZnO: A comparative study of V-, Mn-, and Co-doped ZnO
Chih-Ming Lin; Yu-Chin Tseng; Yi-Jia Tsai; Yu-Sheng Lin; Sheng-Rui Jian; Yu-Chun Chuang; Jenh-Yih Juang
Appl. Phys. Lett. 123, 062101 (2023)
https://doi.org/10.1063/5.0155300
Atomic layer etching (ALE) of III-nitrides
Wan Ying Ho; Yi Chao Chow; Zachary Biegler; Kai Shek Qwah; Tanay Tak; Ashley Wissel-Garcia; Iris Liu; Feng Wu; Shuji Nakamura; James S. Speck
Appl. Phys. Lett. 123, 062102 (2023)
https://doi.org/10.1063/5.0159048
Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors
Appl. Phys. Lett. 123, 062103 (2023)
https://doi.org/10.1063/5.0140777
Tuning donor level of nitrogen-doped diamond by deep strain engineering—An ab initio study
Appl. Phys. Lett. 123, 062105 (2023)
https://doi.org/10.1063/5.0159829
PHONONIC, ACOUSTIC, AND THERMAL PROPERTIES
Deformation insensitive thermal conductance of the designed Si metamaterial
Appl. Phys. Lett. 123, 062201 (2023)
https://doi.org/10.1063/5.0158794
Optimizing the thermoelectric transport properties of fast ionic conductor β-Ag2S under high pressure and high temperature
Wei Zhao; Jiaen Cheng; Yan Li; Meiyan Ye; Dianzhen Wang; Lu Wang; Xinmiao Gai; Cun You; Xin Qu; Qiang Tao; Pinwen Zhu
Appl. Phys. Lett. 123, 062202 (2023)
https://doi.org/10.1063/5.0155614
MAGNETICS AND SPINTRONICS
Evolution of spin Hall mechanism and spin–orbit torque in (α, β) phase tantalum film
Appl. Phys. Lett. 123, 062402 (2023)
https://doi.org/10.1063/5.0155881
Voltage-controlled magnetic anisotropy based physical unclonable function
Appl. Phys. Lett. 123, 062405 (2023)
https://doi.org/10.1063/5.0166164
Characterization of 87Rb MEMS vapor cells for miniature atomic magnetometers
Minwei Jiang; Hao Zhai; Chunyu Jiang; Jian Wang; Chen Chen; Qi Zhang; Dongmin Wu; Baoshun Zhang; Zhongming Zeng; Jie Lin; Yiqun Wang; Peng Jin
Appl. Phys. Lett. 123, 062406 (2023)
https://doi.org/10.1063/5.0149388
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
Two-level systems in nucleated and non-nucleated epitaxial alpha-tantalum films
In Special Collection:
2024 Rising Stars Collection
Loren D. Alegria; Daniel M. Tennant; Kevin R. Chaves; Jonathan R. I. Lee; Sean R. O'Kelley; Yaniv J. Rosen; Jonathan L. DuBois
Appl. Phys. Lett. 123, 062601 (2023)
https://doi.org/10.1063/5.0157654
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Angular magnetic field dependence of a doubly clamped magnetoelectric resonator
Thomas Mion; Benjamin M. Lefler; Margo Staruch; Steven Bennett; Norman Gottron; Samuel E. Lofland; Konrad Bussmann; Nicholas Gangemi; Jeffrey Baldwin; Peter Finkel
Appl. Phys. Lett. 123, 062901 (2023)
https://doi.org/10.1063/5.0155052
LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS
Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensional semiconductors
Appl. Phys. Lett. 123, 063101 (2023)
https://doi.org/10.1063/5.0159245
Hysteresis-free high mobility graphene encapsulated in tungsten disulfide
In Special Collection:
Critical Issues on the 2D-material-based field-effect transistors
Karuppasamy Pandian Soundarapandian; Domenico De Fazio; Francisco Bernal-Texca; Rebecca Hoffmann; Matteo Ceccanti; Sergio L. De Bonis; Sefaattin Tongay; Frank H. L. Koppens
Appl. Phys. Lett. 123, 063103 (2023)
https://doi.org/10.1063/5.0151273
SOLUTION-PROCESSABLE ELECTRONICS AND PHOTONICS
Lead-free CsCu2Br3 perovskite for multilevel resistive switching memory
Jingyang Hu; Long Gao; Wentong Li; Meng Wang; Tuo Cheng; Zhe Li; Xiaoyu Zhang; Yinghui Wang; Jiaqi Zhang
Appl. Phys. Lett. 123, 063301 (2023)
https://doi.org/10.1063/5.0149389
DEVICE PHYSICS AND NANOTECHNOLOGY
Multifunctional high-density ultrasonic microsensor for ranging and 2D imaging
Appl. Phys. Lett. 123, 063501 (2023)
https://doi.org/10.1063/5.0161961
Short-range order in amorphous oxygen-deficient TaOx thin films and its relation to electrical conductivity
Appl. Phys. Lett. 123, 063502 (2023)
https://doi.org/10.1063/5.0156335
BIOPHYSICS, BIOIMAGING, AND BIOSENSORS
ENERGY CONVERSION AND STORAGE
Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT
Appl. Phys. Lett. 123, 063902 (2023)
https://doi.org/10.1063/5.0158240
Printable graphite-based thermoelectric foam for flexible thermoelectric devices
In Special Collection:
Carbon-based Materials for Energy Conversion and Storage
Shengzhi Duan; Yifan Wang; Xiaowen Wu; Meihua Wu; Lianyi Wang; Minghao Fang; Zhaohui Huang; Ruiying Luo
Appl. Phys. Lett. 123, 063904 (2023)
https://doi.org/10.1063/5.0159347
QUANTUM TECHNOLOGIES
Atomic gravimeter robust to environmental effects
Appl. Phys. Lett. 123, 064001 (2023)
https://doi.org/10.1063/5.0163101
INTERDISCIPLINARY APPLIED PHYSICS
In situ monitor of superhydrophobic surface degradation to predict its drag reduction in turbulent flow
In Special Collection:
Superhydrophobic Surfaces
Appl. Phys. Lett. 123, 064101 (2023)
https://doi.org/10.1063/5.0160007
Droplet actuation by coupling corona discharge and contact electrification: Domino coalescence and uphill braking
In Special Collection:
Superhydrophobic Surfaces
Appl. Phys. Lett. 123, 064102 (2023)
https://doi.org/10.1063/5.0159239
ERRATA
Publisher's Note: “Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)” [Appl. Phys. Lett. 122, 243503 (2023)]
H. Tetzner; W. Seifert; O. Skibitzki; Y. Yamamoto; M. Lisker; M. M. Mirza; I. A. Fischer; D. J. Paul; Monica De Seta; G. Capellini
Appl. Phys. Lett. 123, 069901 (2023)
https://doi.org/10.1063/5.0169378
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer
Mritunjay Kumar, Vishal Khandelwal, et al.