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Quantum sensors in diamonds for magnetic resonance spectroscopy: Current applications and future prospects
Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation
Capacitive crosstalk in gate-based dispersive sensing of spin qubits
Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors
Spin–orbit torques and magnetization switching in Gd/Fe multilayers generated by current injection in NiCu alloys
α-In2Se3-based heterojunction photodetector using Nb-doped MoS2
Robust diamond-embedded microwave antenna for optimizing quantum sensing using nitrogen-vacancy center ensembles
EDITORIALS
Opinions on imaging and cutting-edge developments in light microscopy for biomedical applications
In Special Collection:
Advances in Optical Microscopy for Bioimaging
Appl. Phys. Lett. 123, 260401 (2023)
https://doi.org/10.1063/5.0188763
PERSPECTIVES
Skyrmion qubits: Challenges for future quantum computing applications
Appl. Phys. Lett. 123, 260501 (2023)
https://doi.org/10.1063/5.0177864
Quantum sensors in diamonds for magnetic resonance spectroscopy: Current applications and future prospects
Appl. Phys. Lett. 123, 260502 (2023)
https://doi.org/10.1063/5.0169027
PHOTONICS AND OPTOELECTRONICS
Comparison of quantum well structures for room temperature continuous wave 980 nm lasers grown on (001) Si by MOCVD
Appl. Phys. Lett. 123, 261101 (2023)
https://doi.org/10.1063/5.0179895
Multiple visible wavelength switchable cascaded self-Raman laser based on selective wave-mixing mechanism
Appl. Phys. Lett. 123, 261102 (2023)
https://doi.org/10.1063/5.0180952
Monolithic III-nitride photonic circuit on a single chip
Appl. Phys. Lett. 123, 261103 (2023)
https://doi.org/10.1063/5.0178382
Ultraviolet-sensitive and power-efficient oxide phototransistor enabled by nanometer-scale thickness engineering of InZnO semiconductor and gate bias modulation
In Special Collection:
Organic and Hybrid Photodetectors
Appl. Phys. Lett. 123, 261104 (2023)
https://doi.org/10.1063/5.0185490
Spectral routers for snapshot multispectral imaging
Appl. Phys. Lett. 123, 261105 (2023)
https://doi.org/10.1063/5.0176587
Characterization of solar cell passivating contacts using time-of-flight elastic recoil detection analysis
Appl. Phys. Lett. 123, 261106 (2023)
https://doi.org/10.1063/5.0174131
Probabilistic Markov chain modeling of photonic crystal surface emitting lasers
Appl. Phys. Lett. 123, 261107 (2023)
https://doi.org/10.1063/5.0168073
SURFACES AND INTERFACES
Optoelectronic properties of the Sb/III-Sb interface induced by laser photooxidation
Appl. Phys. Lett. 123, 261601 (2023)
https://doi.org/10.1063/5.0164062
Precision sub-monolayer manipulation of diamond surface chemistry using laser direct write oxidation in air
Appl. Phys. Lett. 123, 261602 (2023)
https://doi.org/10.1063/5.0172567
Nanoscale friction of high entropy alloy sulfide thin films in comparison with molybdenum disulfide
In Special Collection:
Era of Entropy: Synthesis, Structure, Properties, and Applications of High-Entropy Materials
Appl. Phys. Lett. 123, 261603 (2023)
https://doi.org/10.1063/5.0180716
METASURFACES AND METAMATERIALS
ADVANCED MATERIALS
Optimized electrical properties of p-type field-effect transistors based on WSe2 grown at moderate temperatures
Appl. Phys. Lett. 123, 261901 (2023)
https://doi.org/10.1063/5.0184707
SEMICONDUCTORS
The limit of anisotropic epitaxial lateral overgrowth in heteroepitaxial systems
Appl. Phys. Lett. 123, 262101 (2023)
https://doi.org/10.1063/5.0178219
Topological Mott transistor with high current density based on hydrogen-terminated diamond
Appl. Phys. Lett. 123, 262102 (2023)
https://doi.org/10.1063/5.0177628
On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes
Appl. Phys. Lett. 123, 262103 (2023)
https://doi.org/10.1063/5.0175872
Capacitive crosstalk in gate-based dispersive sensing of spin qubits
Appl. Phys. Lett. 123, 262104 (2023)
https://doi.org/10.1063/5.0177857
Strain effects on Auger–Meitner recombination in silicon
Appl. Phys. Lett. 123, 262105 (2023)
https://doi.org/10.1063/5.0176950
Photoluminescence of bulk α-In2Se3 crystals irradiated by high-energy electrons
Appl. Phys. Lett. 123, 262106 (2023)
https://doi.org/10.1063/5.0180807
Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors
In Special Collection:
(Ultra)Wide-bandgap Semiconductors for Extreme Environment Electronics
Appl. Phys. Lett. 123, 262107 (2023)
https://doi.org/10.1063/5.0171505
MAGNETICS AND SPINTRONICS
Growth of epitaxial (100)-oriented rare-earth nitrides on (100)LaAlO3
Appl. Phys. Lett. 123, 262401 (2023)
https://doi.org/10.1063/5.0186522
Enhanced spin Hall effect at high temperature in non-centrosymmetric silicide TaSi2 driven by Berry phase monopoles
Appl. Phys. Lett. 123, 262402 (2023)
https://doi.org/10.1063/5.0165333
Spin–orbit torques and magnetization switching in Gd/Fe multilayers generated by current injection in NiCu alloys
Appl. Phys. Lett. 123, 262403 (2023)
https://doi.org/10.1063/5.0178878
Modulation of magneto-dynamic properties of permalloy/holmium heterostructures with antiferromagnetic coupled interface
Appl. Phys. Lett. 123, 262404 (2023)
https://doi.org/10.1063/5.0169500
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Vortex switching in epitaxial nanodot under uniform electric field: The effect of misfit strain
Appl. Phys. Lett. 123, 262901 (2023)
https://doi.org/10.1063/5.0176112
Magneto-electric coupling beyond van der Waals interaction in two-dimensional multiferroic heterostructures
Appl. Phys. Lett. 123, 262902 (2023)
https://doi.org/10.1063/5.0180680
LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS
Cross-domain growth and angle-dependent interlayer coupling of twisted bilayer MoS2
Appl. Phys. Lett. 123, 263101 (2023)
https://doi.org/10.1063/5.0177357
DEVICE PHYSICS AND NANOTECHNOLOGY
Effective electrical conductivity of random resistor networks generated using a Poisson–Voronoi tessellation
Appl. Phys. Lett. 123, 263501 (2023)
https://doi.org/10.1063/5.0181092
High-efficiency edge couplers enabled by vertically tapering on lithium-niobate photonic chips
Appl. Phys. Lett. 123, 263502 (2023)
https://doi.org/10.1063/5.0184899
Two‐dimensional α-In2Se3 memory devices from resistive switching to synaptic plasticity
Appl. Phys. Lett. 123, 263503 (2023)
https://doi.org/10.1063/5.0180935
Capacitance–voltage extraction method for the deep-level defect distribution in organic photodiode
Appl. Phys. Lett. 123, 263504 (2023)
https://doi.org/10.1063/5.0179058
A tunable high-Q flexible ferroelectric film capacitor for GHz RF applications
Appl. Phys. Lett. 123, 263505 (2023)
https://doi.org/10.1063/5.0173884
Characteristics of magnetic field sensor utilizing Co-based Schottky contacts
Appl. Phys. Lett. 123, 263506 (2023)
https://doi.org/10.1063/5.0182393
Direction-sensitive graphene flow sensor
Appl. Phys. Lett. 123, 263507 (2023)
https://doi.org/10.1063/5.0171880
α-In2Se3-based heterojunction photodetector using Nb-doped MoS2
Appl. Phys. Lett. 123, 263508 (2023)
https://doi.org/10.1063/5.0176800
Tunable nonlinear damping in MoS2 nanoresonator
Appl. Phys. Lett. 123, 263509 (2023)
https://doi.org/10.1063/5.0177422
QUANTUM TECHNOLOGIES
Continuous broadband microwave electric field measurement in Rydberg atoms based on the DC Stark effect
Appl. Phys. Lett. 123, 264001 (2023)
https://doi.org/10.1063/5.0186065
Heralded and robust W-state generation for distant superconducting qubits with practical microwave pulse scattering
Appl. Phys. Lett. 123, 264002 (2023)
https://doi.org/10.1063/5.0189377
Robust diamond-embedded microwave antenna for optimizing quantum sensing using nitrogen-vacancy center ensembles
Appl. Phys. Lett. 123, 264003 (2023)
https://doi.org/10.1063/5.0185262
INTERDISCIPLINARY APPLIED PHYSICS
Battery-less luminance sensor biomimicking human sensory nervous system
Appl. Phys. Lett. 123, 264101 (2023)
https://doi.org/10.1063/5.0181949
Field reversal in low pressure, unmagnetized radio frequency capacitively coupled argon plasma discharges
In Special Collection:
Plasma Sources for Advanced Semiconductor Applications
Appl. Phys. Lett. 123, 264102 (2023)
https://doi.org/10.1063/5.0179467
