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Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy
Nitrogen plasma passivated niobium resonators for superconducting quantum circuits
Electron mobility and velocity in Al0.45Ga0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications
Jet-driven viscous locomotion of confined thermoresponsive microgels
Issues
PERSPECTIVES
A perspective on laser-induced graphene for micro-supercapacitor application
Appl. Phys. Lett. 120, 100501 (2022)
https://doi.org/10.1063/5.0078707
PHOTONICS AND OPTOELECTRONICS
Hyperspectral imaging through scattering layers with incoherent light
Appl. Phys. Lett. 120, 101101 (2022)
https://doi.org/10.1063/5.0079234
High operating temperature plasmonic infrared detectors
Appl. Phys. Lett. 120, 101103 (2022)
https://doi.org/10.1063/5.0077456
Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition
In Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Vineeta R. Muthuraj; Caroline E. Reilly; Thomas Mates; Stacia Keller; Shuji Nakamura; Steven P. DenBaars
Appl. Phys. Lett. 120, 101104 (2022)
https://doi.org/10.1063/5.0083893
ADVANCED MATERIALS
Structure-dependent optical nonlinearity of indium tin oxide
In Special Collection:
Zero-index Metamaterials for Classical and Quantum Light
Appl. Phys. Lett. 120, 101901 (2022)
https://doi.org/10.1063/5.0082099
Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires
Appl. Phys. Lett. 120, 101902 (2022)
https://doi.org/10.1063/5.0085788
SEMICONDUCTORS
Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC
In Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Mathias Schubert; Sean Knight; Steffen Richter; Philipp Kühne; Vallery Stanishev; Alexander Ruder; Megan Stokey; Rafał Korlacki; Klaus Irmscher; Petr Neugebauer; Vanya Darakchieva
Appl. Phys. Lett. 120, 102101 (2022)
https://doi.org/10.1063/5.0082353
Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy
In Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Ken Goto; Hisashi Murakami; Akito Kuramata; Shigenobu Yamakoshi; Masataka Higashiwaki; Yoshinao Kumagai
Appl. Phys. Lett. 120, 102102 (2022)
https://doi.org/10.1063/5.0087609
Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates
In Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Peng-Fei Wang; Min-Han Mi; Meng Zhang; Qing Zhu; Jie-Jie Zhu; Yu-Wei Zhou; Jun-Wen Chen; Yi-Lin Chen; Jie-Long Liu; Ling Yang; Bin Hou; Xiao-Hua Ma; Yue Hao
Appl. Phys. Lett. 120, 102103 (2022)
https://doi.org/10.1063/5.0080320
MAGNETICS AND SPINTRONICS
Fast long-wavelength exchange spin waves in partially compensated Ga:YIG
T. Böttcher; M. Ruhwedel; K. O. Levchenko; Q. Wang; H. L. Chumak; M. A. Popov; I. V. Zavislyak; C. Dubs; O. Surzhenko; B. Hillebrands; A. V. Chumak; P. Pirro
Appl. Phys. Lett. 120, 102401 (2022)
https://doi.org/10.1063/5.0082724
Spin–orbit torque in a single ferrimagnetic GdFeCo layer near the compensation temperature
Appl. Phys. Lett. 120, 102402 (2022)
https://doi.org/10.1063/5.0078995
Optimization of Zn–Mn ferrite nanoparticles for low frequency hyperthermia: Exploiting the potential of superquadratic field dependence of magnetothermal response
Nan N. Liu; Alexander P. Pyatakov; Mikhail N. Zharkov; Nikolay A. Pyataev; Gleb B. Sukhorukov; Yulia A. Alekhina; Nikolai S. Perov; Yurii K. Gun'ko; Alexander M. Tishin
Appl. Phys. Lett. 120, 102403 (2022)
https://doi.org/10.1063/5.0082857
Experimental confirmation of the delayed Ni demagnetization in FeNi alloy
In Special Collection:
Ultrafast and Terahertz Spintronics
S. Jana; R. Knut; S. Muralidhar; R. S. Malik; R. Stefanuik; J. Åkerman; O. Karis; C. Schüßler-Langeheine; N. Pontius
Appl. Phys. Lett. 120, 102404 (2022)
https://doi.org/10.1063/5.0080331
Field-free spin–orbit torque switching in L1-FePt single layer with tilted anisotropy
Ying Tao; Chao Sun; Wendi Li; Liu Yang; Fang Jin; Yajuan Hui; Huihui Li; Xiaoguang Wang; Kaifeng Dong
Appl. Phys. Lett. 120, 102405 (2022)
https://doi.org/10.1063/5.0077465
Terahertz charge and spin transport in metallic ferromagnets: The role of crystalline and magnetic order
In Special Collection:
Ultrafast and Terahertz Spintronics
Kumar Neeraj; Apoorva Sharma; Maria Almeida; Patrick Matthes; Fabian Samad; Georgeta Salvan; Olav Hellwig; Stefano Bonetti
Appl. Phys. Lett. 120, 102406 (2022)
https://doi.org/10.1063/5.0067443
Exchange scattering on ultrafast timescales in a ferromagnetic two-sublattice system
In Special Collection:
Ultrafast and Terahertz Spintronics
Appl. Phys. Lett. 120, 102407 (2022)
https://doi.org/10.1063/5.0080379
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
Nitrogen plasma passivated niobium resonators for superconducting quantum circuits
K. Zheng; D. Kowsari; N. J. Thobaben; X. Du; X. Song; S. Ran; E. A. Henriksen; D. S. Wisbey; K. W. Murch
Appl. Phys. Lett. 120, 102601 (2022)
https://doi.org/10.1063/5.0082755
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM
Wensheng Wang; Ko Nakamura; Takashi Eshita; Kenji Nomura; Kazuaki Takai; Hideshi Yamaguchi; Satoru Mihara; Yukinobu Hikosaka; Hitoshi Saito; Manabu Kojima
Appl. Phys. Lett. 120, 102901 (2022)
https://doi.org/10.1063/5.0083645
LOW-DIMENSIONAL AND TOPOLOGICAL MATERIALS
Tunable electronic properties and band alignments of MoSi2N4/GaN and MoSi2N4/ZnO van der Waals heterostructures
In Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Appl. Phys. Lett. 120, 103101 (2022)
https://doi.org/10.1063/5.0083736
Quasi-one-dimensional van der Waals TiS3 nanosheets for energy storage applications: Theoretical predications and experimental validation
In Special Collection:
One-Dimensional van der Waals Materials
Appl. Phys. Lett. 120, 103102 (2022)
https://doi.org/10.1063/5.0080346
DEVICE PHYSICS AND NANOTECHNOLOGY
Passivating the interface between halide perovskite and SnO2 by capsaicin to accelerate charge transfer and retard recombination
Siyuan Lin; Pufeihong Xia; Shuyue Wu; Wenhao Zhang; Yue Hu; Biao Liu; Deming Kong; Han Huang; Yongli Gao; Conghua Zhou
Appl. Phys. Lett. 120, 103503 (2022)
https://doi.org/10.1063/5.0082785
Resistive switching and photovoltaic response characteristics for the BaTiO3/Nb:SrTiO3 heterostructure
Appl. Phys. Lett. 120, 103504 (2022)
https://doi.org/10.1063/5.0083465
Electron mobility and velocity in Al0.45Ga0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications
In Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Appl. Phys. Lett. 120, 103505 (2022)
https://doi.org/10.1063/5.0084022
High-performance ultraviolet photodetectors based on 2D layered In4/3P2Se6 nanoflakes
Appl. Phys. Lett. 120, 103506 (2022)
https://doi.org/10.1063/5.0085766
ENERGY CONVERSION AND STORAGE
Enhancing power output of piezoelectric energy harvesting by gradient auxetic structures
Appl. Phys. Lett. 120, 103901 (2022)
https://doi.org/10.1063/5.0082015
INTERDISCIPLINARY APPLIED PHYSICS
Jet-driven viscous locomotion of confined thermoresponsive microgels

Appl. Phys. Lett. 120, 104101 (2022)
https://doi.org/10.1063/5.0076244
Direct measurement of photocathode time response in a high-brightness photoinjector
Gregor Loisch; Ye Chen; Christian Koschitzki; Houjun Qian; Matthias Gross; Adrian Hannah; Andreas Hoffmann; Davit Kalantaryan; Mikhail Krasilnikov; Sven Lederer; Xiangkun Li; Osip Lishilin; David Melkumyan; Laura Monaco; Raffael Niemczyk; Anne Oppelt; Daniele Sertore; Frank Stephan; Reza Valizadeh; Grygorii Vashchenko; Tobias Weilbach
Appl. Phys. Lett. 120, 104102 (2022)
https://doi.org/10.1063/5.0078927
Accurate time zero determination in an ultrafast transmission electron microscope without energy filter
Appl. Phys. Lett. 120, 104103 (2022)
https://doi.org/10.1063/5.0087850
ERRATA
Erratum: “Probing lattice dynamics in ST 12 phase germanium nanowires by Raman spectroscopy” [Appl. Phys. Lett. 119, 232105 (2021)]
Sreyan Raha; Divya Srivastava; Subhajit Biswas; Adrià Garcia-Gil; Antti J. Karttunen; Justin D. Holmes; Achintya Singha
Appl. Phys. Lett. 120, 109901 (2022)
https://doi.org/10.1063/5.0088391
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.