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Protected solid-state qubits
Monopole embedded eigenstates in nonlocal plasmonic nanospheres
Digital electronics using dielectric elastomer structures as transistors
An in situ ambient and cryogenic transmission electron microscopy study of the effects of temperature on dislocation behavior in CrCoNi-based high-entropy alloys with low stacking-fault energy
Surface charge mediated polar response in ferroelectric nanoparticles
Artificial synapses based on electric stress induced conductance variation in vertical MoReS3 nanosheets
The role of entropy in the success of nonstoichiometric oxides for two-step thermochemical water and CO2 splitting
Issues
EDITORIALS
Organic and hybrid thermoelectrics
In Special Collection:
Organic and Hybrid Thermoelectrics
Appl. Phys. Lett. 119, 260401 (2021)
https://doi.org/10.1063/5.0082126
PERSPECTIVES
Protected solid-state qubits
In Special Collection:
Emerging Qubit Systems - Novel Materials, Encodings and Architectures
Appl. Phys. Lett. 119, 260502 (2021)
https://doi.org/10.1063/5.0073945
PHOTONICS AND OPTOELECTRONICS
Monopole embedded eigenstates in nonlocal plasmonic nanospheres
In Special Collection:
Zero-index Metamaterials for Classical and Quantum Light
Appl. Phys. Lett. 119, 261101 (2021)
https://doi.org/10.1063/5.0077123
ADVANCED MATERIALS
Digital electronics using dielectric elastomer structures as transistors

Appl. Phys. Lett. 119, 261901 (2021)
https://doi.org/10.1063/5.0074821
Effect of Al addition on the microstructures and deformation behaviors of non-equiatomic FeMnCoCr metastable high entropy alloys
In Special Collection:
Metastable High Entropy Alloys
Appl. Phys. Lett. 119, 261902 (2021)
https://doi.org/10.1063/5.0069518
An in situ ambient and cryogenic transmission electron microscopy study of the effects of temperature on dislocation behavior in CrCoNi-based high-entropy alloys with low stacking-fault energy
In Special Collection:
Metastable High Entropy Alloys
Yan Fang; Yujie Chen; Bing Chen; Suzhi Li; Bernd Gludovatz; Eun Soo Park; Guan Sheng; Robert O. Ritchie; Qian Yu
Appl. Phys. Lett. 119, 261903 (2021)
https://doi.org/10.1063/5.0069086
Tuning mechanical metastability in FeMnCo medium entropy alloys and a peek into deformable hexagonal close-packed martensite
In Special Collection:
Metastable High Entropy Alloys
Appl. Phys. Lett. 119, 261905 (2021)
https://doi.org/10.1063/5.0079981
SEMICONDUCTORS
Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide
Appl. Phys. Lett. 119, 262101 (2021)
https://doi.org/10.1063/5.0074046
Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures
In Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
Matthieu Moret; Adrien Rousseau; Pierre Valvin; Sachin Sharma; Laurent Souqui; Henrik Pedersen; Hans Högberg; Guillaume Cassabois; Jianhan Li; J. H. Edgar; Bernard Gil
Appl. Phys. Lett. 119, 262102 (2021)
https://doi.org/10.1063/5.0076424
Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
In Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
F. Zhou; H. H. Gong; Z. P. Wang; W. Z. Xu; X. X. Yu; Y. Yang; F.-F. Ren; S. L. Gu; R. Zhang; Y. D. Zheng; H. Lu; J. D. Ye
Appl. Phys. Lett. 119, 262103 (2021)
https://doi.org/10.1063/5.0071280
Optimization of selective-area regrown n-GaN via MOCVD for high-frequency HEMT
Lian Zhang; Zhe Cheng; Yawei He; Jianxing Xu; Lifang Jia; Xinyuan Wang; Shiyong Zhang; Wei Tan; Yun Zhang
Appl. Phys. Lett. 119, 262104 (2021)
https://doi.org/10.1063/5.0077937
Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy
Appl. Phys. Lett. 119, 262105 (2021)
https://doi.org/10.1063/5.0074454
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Photochromism of UV-annealed Fe-doped SrTiO3
Appl. Phys. Lett. 119, 262901 (2021)
https://doi.org/10.1063/5.0068523
Unusual domain growth during local switching in triglycine sulfate crystals
Appl. Phys. Lett. 119, 262902 (2021)
https://doi.org/10.1063/5.0077685
Surface charge mediated polar response in ferroelectric nanoparticles
Appl. Phys. Lett. 119, 262903 (2021)
https://doi.org/10.1063/5.0077629
Reversible polarization switching in leaky ferroelectrics using an ionic gel induced electrostatic field effect
Appl. Phys. Lett. 119, 262904 (2021)
https://doi.org/10.1063/5.0070067
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Artificial synapses based on electric stress induced conductance variation in vertical MoReS3 nanosheets
Appl. Phys. Lett. 119, 263101 (2021)
https://doi.org/10.1063/5.0076672
Atomically sharp, crystal phase defined GaAs quantum dots
Irene Geijselaers; Neimantas Vainorius; Sebastian Lehmann; Craig E. Pryor; Kimberly A. Dick; Mats-Erik Pistol
Appl. Phys. Lett. 119, 263102 (2021)
https://doi.org/10.1063/5.0072151
Spin dependent charge transfer in MoSe2/hBN/Ni hybrid structures
H. Tornatzky; C. Robert; P. Renucci; B. Han; T. Blon; B. Lassagne; G. Ballon; Y. Lu; K. Watanabe; T. Taniguchi; B. Urbaszek; J. M. J. Lopes; X. Marie
Appl. Phys. Lett. 119, 263103 (2021)
https://doi.org/10.1063/5.0075554
ORGANIC ELECTRONICS AND PHOTONICS
Migration dynamics of excitons/biexcitons induced by a funnel-like nonuniform compression strain over organic polymers
Appl. Phys. Lett. 119, 263302 (2021)
https://doi.org/10.1063/5.0075390
DEVICE PHYSICS
p-type c-Si/SnO2/Mg heterojunction solar cells with an induced inversion layer
Qi Wang; Yurong Zhou; Wanwu Guo; Ying Yang; Jiacheng Shang; Hu Chen; Haibo Mao; Tianyu Zhu; Yuqin Zhou; Fengzhen Liu
Appl. Phys. Lett. 119, 263502 (2021)
https://doi.org/10.1063/5.0070585
Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio
Appl. Phys. Lett. 119, 263503 (2021)
https://doi.org/10.1063/5.0075166
Physical based compact model of Y-Flash memristor for neuromorphic computation
In Special Collection:
Neuromorphic Computing: From Quantum Materials to Emergent Connectivity
Wei Wang; Loai Danial; Eric Herbelin; Barak Hoffer; Batel Oved; Tzofnat Greenberg-Toledo; Evgeny Pikhay; Yakov Roizin; Shahar Kvatinsky
Appl. Phys. Lett. 119, 263504 (2021)
https://doi.org/10.1063/5.0069116
A ventilating acoustic barrier for attenuating broadband diffuse sound
Appl. Phys. Lett. 119, 263505 (2021)
https://doi.org/10.1063/5.0074575
Unidirectional transparency in epsilon-near-zero based rectangular waveguides induced by parity-time symmetry
In Special Collection:
Zero-index Metamaterials for Classical and Quantum Light
Appl. Phys. Lett. 119, 263507 (2021)
https://doi.org/10.1063/5.0076236
p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes
Appl. Phys. Lett. 119, 263508 (2021)
https://doi.org/10.1063/5.0074543
Double-resonant-tunneling-diode patch-antenna oscillators
Appl. Phys. Lett. 119, 263509 (2021)
https://doi.org/10.1063/5.0068114
BIOPHYSICS, BIOIMAGING, AND BIOSENSORS
ENERGY CONVERSION AND STORAGE
Controllable anisotropic thermoelectric properties in 2D covalent organic radical frameworks
In Special Collection:
Thermoelectric Materials Science and Technology Towards Applications
Appl. Phys. Lett. 119, 263901 (2021)
https://doi.org/10.1063/5.0073403
The role of entropy in the success of nonstoichiometric oxides for two-step thermochemical water and CO2 splitting
In Special Collection:
Materials for Renewable Fuels Production
Appl. Phys. Lett. 119, 263902 (2021)
https://doi.org/10.1063/5.0068771
Exceptional thermoelectric power factors in hyperdoped, fully dehydrogenated nanocrystalline silicon thin films
In Special Collection:
Thermoelectric Materials Science and Technology Towards Applications
Appl. Phys. Lett. 119, 263903 (2021)
https://doi.org/10.1063/5.0076547
INTERDISCIPLINARY APPLIED PHYSICS
Observation of multilayer-structured discharge in plasma ionization breakdown
Appl. Phys. Lett. 119, 264102 (2021)
https://doi.org/10.1063/5.0076519
Patterning coexisted micro-/nanostructures for consequential camouflage via mechanical constraint harnessed surface instability
Bo Li (李博); Yehui Wu (吴业辉); Ya Sun (孙亚); Wentao Ma (马文涛); Lei Jiang (姜磊); Zicheng Yang (杨自成); Fei Li (李菲); Guimin Chen (陈贵敏)
Appl. Phys. Lett. 119, 264103 (2021)
https://doi.org/10.1063/5.0079596
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.