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PERSPECTIVES
How good are 2D transistors? An application-specific benchmarking study
In Special Collection:
2D Transistors
Appl. Phys. Lett. 118, 030501 (2021)
https://doi.org/10.1063/5.0029712
PHOTONICS AND OPTOELECTRONICS
Nonlinear amplification based on a tightly phase locked 750 MHz Yb:fiber frequency comb
Appl. Phys. Lett. 118, 031101 (2021)
https://doi.org/10.1063/5.0027419
High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity
Appl. Phys. Lett. 118, 031102 (2021)
https://doi.org/10.1063/5.0039773
SURFACES AND INTERFACES
Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs
Appl. Phys. Lett. 118, 031601 (2021)
https://doi.org/10.1063/5.0037241
Imaging of surface acoustic waves on GaAs using 2D confocal Raman microscopy and atomic force microscopy
Brian Douglas Rummel; Leonid Miroshnik; Marios Patriotis; Andrew Li; Talid R. Sinno; Michael David Henry; Ganesh Balakrishnan; Sang M. Han
Appl. Phys. Lett. 118, 031602 (2021)
https://doi.org/10.1063/5.0034572
ADVANCED MATERIALS
Large anomalous Hall angle in a topological semimetal candidate TbPtBi
Appl. Phys. Lett. 118, 031901 (2021)
https://doi.org/10.1063/5.0033707
SEMICONDUCTORS
Low field electron transport in : An ab initio approach
In Special Collection:
Ultrawide Bandgap Semiconductors
Appl. Phys. Lett. 118, 032101 (2021)
https://doi.org/10.1063/5.0027787
Wide range tunable bandgap and composition β-phase (AlGa)2O3 thin film by thermal annealing
In Special Collection:
Ultrawide Bandgap Semiconductors
Appl. Phys. Lett. 118, 032103 (2021)
https://doi.org/10.1063/5.0027067
Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells
Appl. Phys. Lett. 118, 032104 (2021)
https://doi.org/10.1063/5.0026826
Fingerprints of the electron skew scattering on paramagnetic impurities in semiconductor systems
Appl. Phys. Lett. 118, 032105 (2021)
https://doi.org/10.1063/5.0038288
Gamma-ray induced photo emission from GaN single crystal wafer
Appl. Phys. Lett. 118, 032106 (2021)
https://doi.org/10.1063/5.0031098
MAGNETICS AND SPINTRONICS
Impact of the interplay of piezoelectric strain and current-induced heating on the field-like spin–orbit torque in perpendicularly magnetized Ta/Co20Fe60B20/Ta/MgO film
In Special Collection:
Spin-Orbit Torque (SOT): Materials, Physics, and Devices
Appl. Phys. Lett. 118, 032401 (2021)
https://doi.org/10.1063/5.0035869
Current switching of interface antiferromagnet in ferromagnet/antiferromagnet heterostructure
In Special Collection:
Spin-Orbit Torque (SOT): Materials, Physics, and Devices
Appl. Phys. Lett. 118, 032402 (2021)
https://doi.org/10.1063/5.0039074
Parity-controlled spin-wave excitations in synthetic antiferromagnets
Appl. Phys. Lett. 118, 032403 (2021)
https://doi.org/10.1063/5.0037427
Enhancement of YIGPt spin conductance by local Joule annealing
R. Kohno; N. Thiery; K. An; P. Noel; L. Vila; V. V. Naletov; N. Beaulieu; J. Ben Youssef; G. de Loubens; O. Klein
Appl. Phys. Lett. 118, 032404 (2021)
https://doi.org/10.1063/5.0028664
Maximizing spin–orbit torque efficiency of Ta(O)/Py via modulating oxygen-induced interface orbital hybridization
In Special Collection:
Spin-Orbit Torque (SOT): Materials, Physics, and Devices
Liupeng Yang; Yining Fei; Kaiyuan Zhou; Lina Chen; Qingwei Fu; Liyuan Li; Chunjie Yan; Haotian Li; Youwei Du; Ronghua Liu
Appl. Phys. Lett. 118, 032405 (2021)
https://doi.org/10.1063/5.0033752
Collective spin dynamics under dissipative spin Hall torque
In Special Collection:
Spin-Orbit Torque (SOT): Materials, Physics, and Devices
Appl. Phys. Lett. 118, 032406 (2021)
https://doi.org/10.1063/5.0035586
Gradual magnetization switching via domain nucleation driven by spin–orbit torque
In Special Collection:
Spin-Orbit Torque (SOT): Materials, Physics, and Devices
C. H. Wan; M. E. Stebliy; X. Wang; G. Q. Yu; X. F. Han; A. G. Kolesnikov; M. A. Bazrov; M. E. Letushev; A. V. Ognev; A. S. Samardak
Appl. Phys. Lett. 118, 032407 (2021)
https://doi.org/10.1063/5.0035667
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Oxide semiconductor-based ferroelectric thin-film transistors for advanced neuromorphic computing
In Special Collection:
Ferroelectricity in Hafnium Oxide: Materials and Devices
Appl. Phys. Lett. 118, 032902 (2021)
https://doi.org/10.1063/5.0035741
Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films
In Special Collection:
Ferroelectricity in Hafnium Oxide: Materials and Devices
Lutz Baumgarten; Thomas Szyjka; Terence Mittmann; Monica Materano; Yury Matveyev; Christoph Schlueter; Thomas Mikolajick; Uwe Schroeder; Martina Müller
Appl. Phys. Lett. 118, 032903 (2021)
https://doi.org/10.1063/5.0035686
Thermal retention of atomic layer deposited Hf0.5Zr0.52 films using H2O and O2–H2 plasma oxidation methods
In Special Collection:
Ferroelectricity in Hafnium Oxide: Materials and Devices
Appl. Phys. Lett. 118, 032904 (2021)
https://doi.org/10.1063/5.0035733
Ab initio interphase characteristics in HfO2 and ZrO2 and nucleation of the polar phase
In Special Collection:
Ferroelectricity in Hafnium Oxide: Materials and Devices
Appl. Phys. Lett. 118, 032905 (2021)
https://doi.org/10.1063/5.0029610
Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300 °C by inserting TiO2 interlayers
In Special Collection:
Ferroelectricity in Hafnium Oxide: Materials and Devices
Appl. Phys. Lett. 118, 032906 (2021)
https://doi.org/10.1063/5.0037887
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
Mapping current profiles of point-contacted graphene devices using single-spin scanning magnetometer
Myeongwon Lee; Seong Jang; Woochan Jung; Yuhan Lee; Takashi Taniguchi; Kenji Watanabe; Ha-Reem Kim; Hong-Gyu Park; Gil-Ho Lee; Donghun Lee
Appl. Phys. Lett. 118, 033101 (2021)
https://doi.org/10.1063/5.0037899
Single-surface conduction in a highly bulk-resistive topological insulator Sn0.02Bi1.08Sb0.9Te2S using the Corbino geometry
Tetsuro Misawa; Shuji Nakamura; Yuma Okazaki; Yasuhiro Fukuyama; Nariaki Nasaka; Hiroki Ezure; Chiharu Urano; Nobu-Hisa Kaneko; Takao Sasagawa
Appl. Phys. Lett. 118, 033102 (2021)
https://doi.org/10.1063/5.0026730
Thermoelectric properties of α-In2Se3 monolayer
Appl. Phys. Lett. 118, 033103 (2021)
https://doi.org/10.1063/5.0036316
Prospects for sub-nanometer scale imaging of optical phenomena using electron microscopy
Appl. Phys. Lett. 118, 033104 (2021)
https://doi.org/10.1063/5.0029979
ORGANIC ELECTRONICS AND PHOTONICS
Aperiodic optical coatings for neutral-color semi-transparent organic photovoltaics
Appl. Phys. Lett. 118, 033302 (2021)
https://doi.org/10.1063/5.0037104
BIOPHYSICS, BIOMATERIALS, AND BIOELECTRONICS
ENERGY CONVERSION AND STORAGE
Improved thermoelectric performance of GeTe via efficient yttrium doping
Appl. Phys. Lett. 118, 033901 (2021)
https://doi.org/10.1063/5.0038957
QUANTUM TECHNOLOGIES
Simultaneous thermometry and magnetometry using a fiber-coupled quantum diamond sensor
In Special Collection:
Ultrawide Bandgap Semiconductors
Yuji Hatano; Jaewon Shin; Daisuke Nishitani; Haruki Iwatsuka; Yuta Masuyama; Hiroki Sugiyama; Makoto Ishii; Shinobu Onoda; Takeshi Ohshima; Keigo Arai; Takayuki Iwasaki; Mutsuko Hatano
Appl. Phys. Lett. 118, 034001 (2021)
https://doi.org/10.1063/5.0031502
INTERDISCIPLINARY APPLIED PHYSICS
Chip-based electrostatic beam splitting of guided kiloelectron volt electrons
Appl. Phys. Lett. 118, 034101 (2021)
https://doi.org/10.1063/5.0030049
ERRATA
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.