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Volume 117, Issue 24

14 December 2020

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Cover Image

ISSN 0003-6951

EISSN 1077-3118

In this Issue

PERSPECTIVES
PHOTONICS AND OPTOELECTRONICS
SURFACES AND INTERFACES
ADVANCED MATERIALS
SEMICONDUCTORS
MAGNETICS AND SPINTRONICS
SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
ORGANIC ELECTRONICS AND PHOTONICS
DEVICE PHYSICS
ENERGY CONVERSION AND STORAGE
QUANTUM TECHNOLOGIES
INTERDISCIPLINARY APPLIED PHYSICS
ERRATA

PERSPECTIVES

A perspective on semiconductor-based superconducting qubits

Ramón Aguado

Appl. Phys. Lett. 117, 240501 (2020) https://doi.org/10.1063/5.0024124

Abstract

View articletitled, A perspective on semiconductor-based superconducting qubits

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PHOTONICS AND OPTOELECTRONICS

An AlGaN tunnel junction light emitting diode operating at 255 nm

A. Pandey; J. Gim; R. Hovden; Z. Mi

Appl. Phys. Lett. 117, 241101 (2020) https://doi.org/10.1063/5.0036286

Abstract

View articletitled, An AlGaN tunnel junction light emitting diode operating at 255 nm

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CHORUS

Optical trapping using all silicon nanoantennas with ultra-high electric field enhancement

Wei Zhan; Kui Gao; Chenjun Zhu; Wuzhou Song

Appl. Phys. Lett. 117, 241102 (2020) https://doi.org/10.1063/5.0027068

Abstract

View articletitled, Optical trapping using all silicon nanoantennas with ultra-high electric field enhancement

Supplementary Material

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Anomalous multi-ramp fractional vortex beams with arbitrary topological charge jumps

Jun Zeng; Hao Zhang; Zhiheng Xu; Chengliang Zhao; Yangjian Cai; Greg Gbur

Appl. Phys. Lett. 117, 241103 (2020) https://doi.org/10.1063/5.0028490

Abstract

View articletitled, Anomalous multi-ramp fractional vortex beams with arbitrary topological charge jumps

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Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities

In Special Collection: Ultrawide Bandgap Semiconductors

Jan Ruschel; Johannes Glaab; Norman Susilo; Sylvia Hagedorn; Sebastian Walde; Eviathar Ziffer; Hyun Kyong Cho; Neysha Lobo Ploch; Tim Wernicke; Markus Weyers; Sven Einfeldt; Michael Kneissl

Appl. Phys. Lett. 117, 241104 (2020) https://doi.org/10.1063/5.0027769

Abstract

View articletitled, Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities

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Flat photonics for broadband light-trapping

Hao Luo; Jingyi Tian; Qiang Li; Binze Ma; Yining Zhu; Jianbo Yu; Yu Hong; Ao Ouyang; Pavel Belov; Ravindra K Sinha; Sandeep Kaur; Min Qiu

Appl. Phys. Lett. 117, 241105 (2020) https://doi.org/10.1063/5.0033312

Abstract

View articletitled, Flat photonics for broadband light-trapping

Supplementary Material

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SURFACES AND INTERFACES

Bidirectional multi-mode microwave vortex beam generation enabled by spoof surface plasmon polaritons

Hao Feng; Longfang Ye; Yong Zhang; Weiwen Li; Huanyang Chen; Qing Huo Liu

Appl. Phys. Lett. 117, 241601 (2020) https://doi.org/10.1063/5.0031209

Abstract

View articletitled, Bidirectional multi-mode microwave vortex beam generation enabled by spoof surface plasmon polaritons

Supplementary Material

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ADVANCED MATERIALS

3D printing-assistant method for magneto-active pulse pump: Experiment, simulation, and deformation theory

Xufeng Cao; Shouhu Xuan; Tao Hu; Xinglong Gong

Appl. Phys. Lett. 117, 241901 (2020) https://doi.org/10.1063/5.0030055

Abstract

View articletitled, 3D printing-assistant method for magneto-active pulse pump: Experiment, simulation, and deformation theory

Supplementary Material

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SEMICONDUCTORS

Toward high voltage radio frequency devices in β-Ga₂O₃

In Special Collection: Ultrawide Bandgap Semiconductors

Neil Moser; Kyle Liddy; Ahmad Islam; Nicholas Miller; Kevin Leedy; Thaddeus Asel; Shin Mou; Andrew Green; Kelson Chabak

Appl. Phys. Lett. 117, 242101 (2020) https://doi.org/10.1063/5.0031482

Abstract

View articletitled, Toward high voltage radio frequency devices in β-Ga2O3

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Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)₂O₃ thin films from pulsed laser deposition at 1000 °C on r-plane Al₂O₃

In Special Collection: Ultrawide Bandgap Semiconductors

M. Grundmann; T. Stralka; M. Lorenz

Appl. Phys. Lett. 117, 242102 (2020) https://doi.org/10.1063/5.0030675

Abstract

View articletitled, Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)2O3 thin films from pulsed laser deposition at 1000 °C on r-plane Al2O3

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Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

In Special Collection: Ultrawide Bandgap Semiconductors

P. Grivickas; P. Ščajev; N. Kazuchits; S. Lastovskii; L. F. Voss; A. M. Conway; A. Mazanik; O. Korolik; V. Bikbajevas; V. Grivickas

Appl. Phys. Lett. 117, 242103 (2020) https://doi.org/10.1063/5.0028363

Abstract

View articletitled, Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

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Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al₂O₃/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Yuto Ando; Kentaro Nagamatsu; Manato Deki; Noriyuki Taoka; Atsushi Tanaka; Shugo Nitta; Yoshio Honda; Tohru Nakamura; Hiroshi Amano

Appl. Phys. Lett. 117, 242104 (2020) https://doi.org/10.1063/5.0028516

Abstract

View articletitled, Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

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High electron mobility of Al_xGa₁₋_xN evaluated by unfolding the DFT band structure

In Special Collection: Ultrawide Bandgap Semiconductors

Nick Pant; Zihao Deng; Emmanouil Kioupakis

Appl. Phys. Lett. 117, 242105 (2020) https://doi.org/10.1063/5.0027802

Abstract

View articletitled, High electron mobility of AlxGa1−xN evaluated by unfolding the DFT band structure

Supplementary Material

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CHORUS

MAGNETICS AND SPINTRONICS

Charge-spin conversion signal in WTe₂ van der Waals hybrid devices with a geometrical design

Bing Zhao; Anamul Md. Hoque; Dmitrii Khokhriakov; Bogdan Karpiak; Saroj P. Dash

Appl. Phys. Lett. 117, 242401 (2020) https://doi.org/10.1063/5.0029071

Abstract

View articletitled, Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design

Supplementary Material

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Observation of quantum interference conductance fluctuations in metal rings with strong spin–orbit coupling

R. Ramos; T. Makiuchi; T. Kikkawa; S. Daimon; K. Oyanagi; E. Saitoh

Appl. Phys. Lett. 117, 242402 (2020) https://doi.org/10.1063/5.0031708

Abstract

View articletitled, Observation of quantum interference conductance fluctuations in metal rings with strong spin–orbit coupling

Supplementary Material

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CHORUS

Disorder dependent spin–orbit torques in L1 FePt single layer

In Special Collection: Spin-Orbit Torque (SOT): Materials, Physics, and Devices

S. Q. Zheng; K. K. Meng; Q. B. Liu; J. K. Chen; J. Miao; X. G. Xu; Y. Jiang

Appl. Phys. Lett. 117, 242403 (2020) https://doi.org/10.1063/5.0028815

Abstract

View articletitled, Disorder dependent spin–orbit torques in L1 FePt single layer

Supplementary Material

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Thermal stability for domain wall mediated magnetization reversal in perpendicular STT MRAM cells with W insertion layers

G. Mihajlović; N. Smith; T. Santos; J. Li; B. D. Terris; J. A. Katine

Appl. Phys. Lett. 117, 242404 (2020) https://doi.org/10.1063/5.0023852

Abstract

View articletitled, Thermal stability for domain wall mediated magnetization reversal in perpendicular STT MRAM cells with W insertion layers

Supplementary Material

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An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit

Andrew Ross; Romain Lebrun; Lorenzo Baldrati; Akashdeep Kamra; Olena Gomonay; Shilei Ding; Felix Schreiber; Dirk Backes; Francesco Maccherozzi; Daniel A. Grave; Avner Rothschild; Jairo Sinova; Mathias Kläui

Appl. Phys. Lett. 117, 242405 (2020) https://doi.org/10.1063/5.0032940

Abstract

View articletitled, An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit

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Electric steering of spin excitation in nanostructured synthetic antiferromagnet

Xi-Guang Wang; Guang-Hua Guo; Jamal Berakdar

Appl. Phys. Lett. 117, 242406 (2020) https://doi.org/10.1063/5.0029523

Abstract

View articletitled, Electric steering of spin excitation in nanostructured synthetic antiferromagnet

Supplementary Material

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Effect of heating on spin-motive force induced by magnetic resonance

Kenji Tanabe

Appl. Phys. Lett. 117, 242407 (2020) https://doi.org/10.1063/5.0034694

Abstract

View articletitled, Effect of heating on spin-motive force induced by magnetic resonance

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SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

Universal proximity effects in hybrid superconductor–linker molecule–nanoparticle systems: The effect of molecular chirality

Manimuthu Periyasamy; Harry Bradshaw; Nir Sukenik; Hen Alpern; Shira Yochelis; Jason W. A. Robinson; Oded Millo; Yossi Paltiel

Appl. Phys. Lett. 117, 242601 (2020) https://doi.org/10.1063/5.0030892

Abstract

View articletitled, Universal proximity effects in hybrid superconductor–linker molecule–nanoparticle systems: The effect of molecular chirality

Supplementary Material

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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

Ultra-thin Hf_0.5Zr_0.5O₂ thin-film-based ferroelectric tunnel junction via stress induced crystallization

In Special Collection: Ferroelectricity in Hafnium Oxide: Materials and Devices

Youngin Goh; Junghyeon Hwang; Yongsun Lee; Minki Kim; Sanghun Jeon

Appl. Phys. Lett. 117, 242901 (2020) https://doi.org/10.1063/5.0029516

Abstract

View articletitled, Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

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A method for estimating defects in ferroelectric thin film MOSCAPs

In Special Collection: Ferroelectricity in Hafnium Oxide: Materials and Devices

Anton E. O. Persson; Robin Athle; Johannes Svensson; Mattias Borg; Lars-Erik Wernersson

Appl. Phys. Lett. 117, 242902 (2020) https://doi.org/10.1063/5.0029210

Abstract

View articletitled, A method for estimating defects in ferroelectric thin film MOSCAPs

Supplementary Material

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LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES

Selective etching of hexagonal boron nitride by high-pressure CF₄ plasma for individual one-dimensional ohmic contacts to graphene layers

Yuta Seo; Satoru Masubuchi; Eisuke Watanabe; Momoko Onodera; Rai Moriya; Kenji Watanabe; Takashi Taniguchi; Tomoki Machida

Appl. Phys. Lett. 117, 243101 (2020) https://doi.org/10.1063/5.0022557

Abstract

View articletitled, Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers

Supplementary Material

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CHORUS

Light absorption and nanofocusing on a tapered magnetic metasurface

In Special Collection: Metastructures: From Physics to Application

Dong Wei; Chai Hu; Mingce Chen; Jiashuo Shi; Jun Luo; Haiwei Wang; Changsheng Xie; Xinyu Zhang

Appl. Phys. Lett. 117, 243102 (2020) https://doi.org/10.1063/5.0026073

Abstract

View articletitled, Light absorption and nanofocusing on a tapered magnetic metasurface

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Bismuth-catalyzed n-type doping and growth evolution of planar silicon nanowires

Taige Dong; Ying Sun; Junzhuan Wang; Jun Xu; Kunji Chen; Linwei Yu

Appl. Phys. Lett. 117, 243103 (2020) https://doi.org/10.1063/5.0032036

Abstract

View articletitled, Bismuth-catalyzed n-type doping and growth evolution of planar silicon nanowires

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ORGANIC ELECTRONICS AND PHOTONICS

Plasmon-enhanced S₂ electroluminescence from the high-lying excited state of a single porphyrin molecule

Xiao-Jun Tian; Fan-Fang Kong; Yun-Jie Yu; Shi-Hao Jing; Xian-Biao Zhang; Yuan Liao; Yao Zhang; Yang Zhang; Zhen-Chao Dong

Appl. Phys. Lett. 117, 243301 (2020) https://doi.org/10.1063/5.0027291

Abstract

View articletitled, Plasmon-enhanced S2 electroluminescence from the high-lying excited state of a single porphyrin molecule

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DEVICE PHYSICS

Resistive switching kinetics and second-order effects in parylene-based memristors

Anna N. Matsukatova; Andrey V. Emelyanov; Anton A. Minnekhanov; Aleksandr A. Nesmelov; Artem Yu. Vdovichenko; Sergey N. Chvalun; Vladimir V. Rylkov; Pavel A. Forsh; Viacheslav A. Demin; Pavel K. Kashkarov; Mikhail V. Kovalchuk

Appl. Phys. Lett. 117, 243501 (2020) https://doi.org/10.1063/5.0030069

Abstract

View articletitled, Resistive switching kinetics and second-order effects in parylene-based memristors

Supplementary Material

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Electrode-induced polarity conversion in Nb₂O₅/NbO_x resistive switching devices

Ziliang Zhou; Mei Yang; Zhen Fu; Hong Wang; Xiaohua Ma; Haixia Gao

Appl. Phys. Lett. 117, 243502 (2020) https://doi.org/10.1063/5.0020501

Abstract

View articletitled, Electrode-induced polarity conversion in Nb2O5/NbOx resistive switching devices

Supplementary Material

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Launcher of high-order Bessel vortex beam carrying orbital angular momentum by designing anisotropic holographic metasurface

Xiangshuai Meng; Xiaoming Chen; Lin Yang; Wei Xue; Anxue Zhang; Wei E. I. Sha; Qiang Cheng

Appl. Phys. Lett. 117, 243503 (2020) https://doi.org/10.1063/5.0031139

Abstract

View articletitled, Launcher of high-order Bessel vortex beam carrying orbital angular momentum by designing anisotropic holographic metasurface

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Electromechanical coupling and motion transduction in β-Ga₂O₃ vibrating channel transistors

In Special Collection: Ultrawide Bandgap Semiconductors

Xu-Qian Zheng; Tahmid Kaisar; Philip X.-L. Feng

Appl. Phys. Lett. 117, 243504 (2020) https://doi.org/10.1063/5.0031503

Abstract

View articletitled, Electromechanical coupling and motion transduction in β-Ga2O3 vibrating channel transistors

Supplementary Material

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CHORUS

Characterization of trap states in buried nitrogen-implanted β-Ga₂O₃

In Special Collection: Ultrawide Bandgap Semiconductors

Abhishek Mishra; Taylor Moule; Michael J Uren; Man Hoi Wong; Ken Goto; Hisashi Murakami; Yoshinao Kumagai; Masataka Higashiwaki; Martin Kuball

Appl. Phys. Lett. 117, 243505 (2020) https://doi.org/10.1063/5.0031480

Abstract

View articletitled, Characterization of trap states in buried nitrogen-implanted β-Ga2O3

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ENERGY CONVERSION AND STORAGE

Cross-sectional Kelvin probe force microscopy on Cu(In,Ga)Se₂ solar cells: Influence of RbF and KF post-deposition treatment on the surface potential of the absorber layer

Jasmin Seeger; Florian Wilhelmi; Jonas Schundelmeier; Setareh Zahedi-Azad; Roland Scheer; Kerstin Schmidt; Heinz Kalt; Michael Hetterich

Appl. Phys. Lett. 117, 243901 (2020) https://doi.org/10.1063/5.0032371

Abstract

View articletitled, Cross-sectional Kelvin probe force microscopy on Cu(In,Ga)Se2 solar cells: Influence of RbF and KF post-deposition treatment on the surface potential of the absorber layer

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Flywheel-based traveling-wave thermoacoustic engine

T. Biwa; T. Watanabe; G. Penelet

Appl. Phys. Lett. 117, 243902 (2020) https://doi.org/10.1063/5.0022315

Abstract

View articletitled, Flywheel-based traveling-wave thermoacoustic engine

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QUANTUM TECHNOLOGIES

A fast and large bandwidth superconducting variable coupler

H.-S. Chang; K. J. Satzinger; Y. P. Zhong; A. Bienfait; M.-H. Chou; C. R. Conner; É. Dumur; J. Grebel; G. A. Peairs; R. G. Povey; A. N. Cleland

Appl. Phys. Lett. 117, 244001 (2020) https://doi.org/10.1063/5.0028840

Abstract

View articletitled, A fast and large bandwidth superconducting variable coupler

Supplementary Material

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CHORUS

Single-photon emission from two-dimensional hexagonal boron nitride annealed in a carbon-rich environment

Chao Lyu; Yaozheng Zhu; Pingfan Gu; Jiandong Qiao; Kenji Watanabe; Takashi Taniguchi; Yu Ye

Appl. Phys. Lett. 117, 244002 (2020) https://doi.org/10.1063/5.0025792

Abstract

View articletitled, Single-photon emission from two-dimensional hexagonal boron nitride annealed in a carbon-rich environment

Supplementary Material

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Extended source of indistinguishable polarization-entangled photons over wide angles of emission

Salem F. Hegazy; Salah S. A. Obayya

Appl. Phys. Lett. 117, 244003 (2020) https://doi.org/10.1063/5.0022646

Abstract

View articletitled, Extended source of indistinguishable polarization-entangled photons over wide angles of emission

Supplementary Material

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INTERDISCIPLINARY APPLIED PHYSICS

Sign reversal in magnetic field amplification by relativistic laser-driven microtube implosions

K. Weichman; M. Murakami; A. P. L. Robinson; A. V. Arefiev

Appl. Phys. Lett. 117, 244101 (2020) https://doi.org/10.1063/5.0027466

Abstract

View articletitled, Sign reversal in magnetic field amplification by relativistic laser-driven microtube implosions

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CHORUS

ERRATA

Erratum: “Development of an endothermic electrode for electroporation-based therapies: A simulation study” [Appl. Phys. Lett. 117, 143702 (2020)]

Yajun Zhao; Rafael V. Davalos

Appl. Phys. Lett. 117, 249901 (2020) https://doi.org/10.1063/5.0038928

Extract

View articletitled, Erratum: “Development of an endothermic electrode for electroporation-based therapies: A simulation study” [Appl. Phys. Lett. 117, 143702 (2020)]

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Issues

Cover Image

PERSPECTIVES

PHOTONICS AND OPTOELECTRONICS

SURFACES AND INTERFACES

ADVANCED MATERIALS

SEMICONDUCTORS

MAGNETICS AND SPINTRONICS

SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

ENERGY CONVERSION AND STORAGE

QUANTUM TECHNOLOGIES

INTERDISCIPLINARY APPLIED PHYSICS

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