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Volume 116, Issue 22

1 June 2020

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Cover Image

ISSN 0003-6951

EISSN 1077-3118

In this Issue

PHOTONICS AND OPTOELECTRONICS
SURFACES AND INTERFACES
ADVANCED MATERIALS
SEMICONDUCTORS
MAGNETICS AND SPINTRONICS
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES
DEVICE PHYSICS
ENERGY CONVERSION AND STORAGE
QUANTUM TECHNOLOGIES
INTERDISCIPLINARY APPLIED PHYSICS

PHOTONICS AND OPTOELECTRONICS

Resonant tunneling diodes strongly coupled to the cavity field

B. Limbacher; M. A. Kainz; S. Schoenhuber; M. Wenclawiak; C. Derntl; A. M. Andrews; H. Detz; G. Strasser; A. Schwaighofer; B. Lendl; J. Darmo; K. Unterrainer

Appl. Phys. Lett. 116, 221101 (2020) https://doi.org/10.1063/5.0007118

Abstract

View articletitled, Resonant tunneling diodes strongly coupled to the cavity field

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Rotational Doppler shift upon reflection from a right angle prism

O. Emile; J. Emile; C. Brousseau

Appl. Phys. Lett. 116, 221102 (2020) https://doi.org/10.1063/5.0009396

Abstract

View articletitled, Rotational Doppler shift upon reflection from a right angle prism

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Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

Arash Dehzangi; Donghai Wu; Ryan McClintock; Jiakai Li; Manijeh Razeghi

Appl. Phys. Lett. 116, 221103 (2020) https://doi.org/10.1063/5.0010273

Abstract

View articletitled, Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

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Silicon carbide zipper photonic crystal optomechanical cavities

Xiyuan Lu; Jonathan Y. Lee; Qiang Lin

Appl. Phys. Lett. 116, 221104 (2020) https://doi.org/10.1063/5.0010078

Abstract

View articletitled, Silicon carbide zipper photonic crystal optomechanical cavities

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CHORUS

Classically entangled Ince–Gaussian modes

Yao-Li; Xiao-Bo Hu; Benjamin Perez-Garcia; Bo-Zhao; Wei Gao; Zhi-Han Zhu; Carmelo Rosales-Guzmán

Appl. Phys. Lett. 116, 221105 (2020) https://doi.org/10.1063/5.0011142

Abstract

View articletitled, Classically entangled Ince–Gaussian modes

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Error-free data transmission through fast broadband all-optical modulation in graphene–silicon optoelectronics

Hao Zhou; Xiaoliang Zhu; Tingyi Gu; Jiagui Wu; Guoliang Deng; Shu-Wei Huang; Noam Ophir; Mingbin Yu; Dim-Lee Kwong; Shouhuan Zhou; Keren Bergman; Chee Wei Wong

Appl. Phys. Lett. 116, 221106 (2020) https://doi.org/10.1063/5.0006596

Abstract

View articletitled, Error-free data transmission through fast broadband all-optical modulation in graphene–silicon optoelectronics

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CHORUS

A graphene-based magnetoplasmonic metasurface for actively tunable transmission and polarization rotation at terahertz frequencies

Prashant Padmanabhan; Stephane Boubanga-Tombet; Hirokazu Fukidome; Taiichi Otsuji; Rohit P. Prasankumar

Appl. Phys. Lett. 116, 221107 (2020) https://doi.org/10.1063/5.0006448

Abstract

View articletitled, A graphene-based magnetoplasmonic metasurface for actively tunable transmission and polarization rotation at terahertz frequencies

Supplementary Material

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CHORUS

SURFACES AND INTERFACES

Controlled support of a magnetic fluid at a superhydrophobic interface

Qingwen Dai; Zhengdong Hu; Wei Huang; Xiaolei Wang

Appl. Phys. Lett. 116, 221601 (2020) https://doi.org/10.1063/5.0005639

Abstract

View articletitled, Controlled support of a magnetic fluid at a superhydrophobic interface

Supplementary Material

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Ultralow operation voltages of a transparent memristor based on bilayer ITO

Yuchen Wang; Lingxiang Hu; Xianhua Wei; Fei Zhuge

Appl. Phys. Lett. 116, 221602 (2020) https://doi.org/10.1063/5.0008416

Abstract

View articletitled, Ultralow operation voltages of a transparent memristor based on bilayer ITO

Supplementary Material

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ADVANCED MATERIALS

Effect of nano-SiO₂ hybridization of PDMS substrate on strain mismatch of flexible electronic film

Cheng Chen; Wanghang Gu; Rui Chen; Hanwei Zhao; Bing Liu; Hongwei Ji

Appl. Phys. Lett. 116, 221901 (2020) https://doi.org/10.1063/5.0002387

Abstract

View articletitled, Effect of nano-SiO2 hybridization of PDMS substrate on strain mismatch of flexible electronic film

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The mechanism exploration for zero-field ferromagnetism in intrinsic topological insulator MnBi₂Te₄ by Bi₂Te₃ intercalations

Hangkai Xie; Dinghui Wang; Zixiu Cai; Bo Chen; Jingwen Guo; Muhammad Naveed; Shuai Zhang; Minhao Zhang; Xuefeng Wang; Fucong Fei; Haijun Zhang; Fengqi Song

Appl. Phys. Lett. 116, 221902 (2020) https://doi.org/10.1063/5.0009085

Abstract

View articletitled, The mechanism exploration for zero-field ferromagnetism in intrinsic topological insulator MnBi2Te4 by Bi2Te3 intercalations

Supplementary Material

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SEMICONDUCTORS

Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

Jiejie Zhu; Yingcong Zhang; Michael J. Uren; Siyu Liu; Pengfei Wang; Minhan Mi; Bin Hou; Ling Yang; Martin Kuball; Xiaohua Ma; Yue Hao

Appl. Phys. Lett. 116, 222101 (2020) https://doi.org/10.1063/5.0004957

Abstract

View articletitled, Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

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The nature of the DX state in Ge-doped AlGaN

Pegah Bagheri; Ronny Kirste; Pramod Reddy; Shun Washiyama; Seiji Mita; Biplab Sarkar; Ramón Collazo; Zlatko Sitar

Appl. Phys. Lett. 116, 222102 (2020) https://doi.org/10.1063/5.0008362

Abstract

View articletitled, The nature of the DX state in Ge-doped AlGaN

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CHORUS

Inverse spin Hall photocurrent in thin-film MoTe₂

Yang Zhang; Yu Wang; Yu Liu; Xiao-Lin Zeng; Jing Wu; Jin-Ling Yu; Yong-Hai Chen

Appl. Phys. Lett. 116, 222103 (2020) https://doi.org/10.1063/1.5142737

Abstract

View articletitled, Inverse spin Hall photocurrent in thin-film MoTe2

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Impact of byproducts formed on a 4H–SiC surface on interface state density of Al₂O₃/4H–SiC(0001) gate stacks

Takuma Doi; Shigehisa Shibayama; Wakana Takeuchi; Mitsuo Sakashita; Noriyuki Taoka; Mitsuaki Shimizu; Osamu Nakatsuka

Appl. Phys. Lett. 116, 222104 (2020) https://doi.org/10.1063/1.5143574

Abstract

View articletitled, Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks

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In situ TEM revealing pretreatment and interface effects in Ge₂Sb₂Te₅

Ruiwen Shao; Lihua Wang; Weikang Dong; Lixin Yao; Yongjin Chen; Lixin Dong; Kun Zheng; Xiaodong Han

Appl. Phys. Lett. 116, 222105 (2020) https://doi.org/10.1063/5.0007124

Abstract

View articletitled, In situ TEM revealing pretreatment and interface effects in Ge2Sb2Te5

Supplementary Material

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Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

W. Liu; C. Haller; Y. Chen; T. Weatherley; J.-F. Carlin; G. Jacopin; R. Butté; N. Grandjean

Appl. Phys. Lett. 116, 222106 (2020) https://doi.org/10.1063/5.0004321

Abstract

View articletitled, Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Supplementary Material

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MAGNETICS AND SPINTRONICS

Magnetization switching by nanosecond pulse of electric current in thin ferrimagnetic film near compensation temperature

V. V. Yurlov; K. A. Zvezdin; G. A. Kichin; M. D. Davydova; A. E. Tseplina; Ngo Trong Hai; Jong-Ching Wu; Sheng-Zhe Ciou; Yi-Ru Chiou; Lin-Xiu Ye; Te-Ho Wu; Ramesh Chandra Bhatt; A. K. Zvezdin

Appl. Phys. Lett. 116, 222401 (2020) https://doi.org/10.1063/5.0010687

Abstract

View articletitled, Magnetization switching by nanosecond pulse of electric current in thin ferrimagnetic film near compensation temperature

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The accurate measurement of spin orbit torque by utilizing the harmonic longitudinal voltage with Wheatstone bridge structure

Bo Wang; Yonghai Guo; Bo Han; Ze Yan; Tao Wang; Dezheng Yang; Xiaolong Fan; Jiangwei Cao

Appl. Phys. Lett. 116, 222402 (2020) https://doi.org/10.1063/1.5145221

Abstract

View articletitled, The accurate measurement of spin orbit torque by utilizing the harmonic longitudinal voltage with Wheatstone bridge structure

Supplementary Material

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Chiral-anomaly induced large negative magnetoresistance and nontrivial π-Berry phase in half-Heusler compounds RPtBi (R=Tb, Ho, and Er)

Jie Chen; Hang Li; Bei Ding; Enke Liu; Yuan Yao; Guangheng Wu; Wenhong Wang

Appl. Phys. Lett. 116, 222403 (2020) https://doi.org/10.1063/5.0007528

Abstract

View articletitled, Chiral-anomaly induced large negative magnetoresistance and nontrivial π-Berry phase in half-Heusler compounds RPtBi (R=Tb, Ho, and Er)

Supplementary Material

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Enhancing the soft magnetic properties of FeGa with a non-magnetic underlayer for microwave applications

Adrian Acosta; Kevin Fitzell; Joseph D. Schneider; Cunzheng Dong; Zhi Yao; Yuanxun Ethan Wang; Gregory P. Carman; Nian X. Sun; Jane P. Chang

Appl. Phys. Lett. 116, 222404 (2020) https://doi.org/10.1063/5.0007603

Abstract

View articletitled, Enhancing the soft magnetic properties of FeGa with a non-magnetic underlayer for microwave applications

Supplementary Material

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Lateral domain wall oscillations in IMA/PMA bilayered nano-strips driven by a perpendicular current: A type of domain wall based oscillators

X. Yuan; Z. Lu; S. Li; R. Xiong

Appl. Phys. Lett. 116, 222405 (2020) https://doi.org/10.1063/5.0007771

Abstract

View articletitled, Lateral domain wall oscillations in IMA/PMA bilayered nano-strips driven by a perpendicular current: A type of domain wall based oscillators

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Domain wall diode based on functionally graded Dzyaloshinskii–Moriya interaction

Kostiantyn V. Yershov; Volodymyr P. Kravchuk; Denis D. Sheka; Jeroen van den Brink; Avadh Saxena

Appl. Phys. Lett. 116, 222406 (2020) https://doi.org/10.1063/5.0010107

Abstract

View articletitled, Domain wall diode based on functionally graded Dzyaloshinskii–Moriya interaction

Supplementary Material

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DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

Effects of a nano-scale embossed surface on the acoustic emission of air-coupled piezoelectric ultrasonic transducers

Yonghyeon Na; Min-Seon Lee; Woon-Ik Park; Jung Woo Lee; Young Hun Jeong

Appl. Phys. Lett. 116, 222901 (2020) https://doi.org/10.1063/5.0008691

Abstract

View articletitled, Effects of a nano-scale embossed surface on the acoustic emission of air-coupled piezoelectric ultrasonic transducers

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Dielectric polarizability of alkali and alkaline-earth modified silicate glasses at microwave frequency

Michael T. Lanagan; Ling Cai; Lisa A. Lamberson; Jingshi Wu; Elena Streltsova; Nicholas J. Smith

Appl. Phys. Lett. 116, 222902 (2020) https://doi.org/10.1063/5.0008646

Abstract

View articletitled, Dielectric polarizability of alkali and alkaline-earth modified silicate glasses at microwave frequency

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Dynamic piezoelectric response of relaxor single crystal under electrically driven inter-ferroelectric phase transformations

E. A. Patterson; M. Staruch; B. R. Matis; S. Young; S. E. Lofland; L. Antonelli; F. Blackmon; D. Damjanovic; M. G. Cain; P. B. J. Thompson; C. A. Lucas; P. Finkel

Appl. Phys. Lett. 116, 222903 (2020) https://doi.org/10.1063/5.0007820

Abstract

View articletitled, Dynamic piezoelectric response of relaxor single crystal under electrically driven inter-ferroelectric phase transformations

Supplementary Material

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Preparation and characterization of a flexible ferroelectric tunnel junction

Ruonan Li; Yeming Xu; Jiamei Song; Peng Wang; Chen Li; Di Wu

Appl. Phys. Lett. 116, 222904 (2020) https://doi.org/10.1063/5.0006638

Abstract

View articletitled, Preparation and characterization of a flexible ferroelectric tunnel junction

Supplementary Material

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LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES

Lasing up to 380 K in a sublimated GaN nanowire

S. Sergent; B. Damilano; S. Vézian; S. Chenot; T. Tsuchizawa; M. Notomi

Appl. Phys. Lett. 116, 223101 (2020) https://doi.org/10.1063/5.0004771

Abstract

View articletitled, Lasing up to 380 K in a sublimated GaN nanowire

Supplementary Material

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Electrical properties tunability of large area MoS₂ thin films by oxygen plasma treatment

Bhim Chamlagain; Saiful I. Khondaker

Appl. Phys. Lett. 116, 223102 (2020) https://doi.org/10.1063/5.0008850

Abstract

View articletitled, Electrical properties tunability of large area MoS2 thin films by oxygen plasma treatment

Supplementary Material

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CHORUS

Laser-induced magnetization dynamics in a van der Waals ferromagnetic Cr₂Ge₂Te₆ nanoflake

Tongyao Zhang; Yuansen Chen; Yanxu Li; Zhichao Guo; Zhi Wang; Zheng Han; Wei He; Jing Zhang

Appl. Phys. Lett. 116, 223103 (2020) https://doi.org/10.1063/5.0006080

Abstract

View articletitled, Laser-induced magnetization dynamics in a van der Waals ferromagnetic Cr2Ge2Te6 nanoflake

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DEVICE PHYSICS

Charging and discharging characteristics of a single gold nanoparticle embedded in Al₂O₃ thin films

Ayman Rezk; Yawar Abbas; Irfan Saadat; Ammar Nayfeh; Moh'd Rezeq

Appl. Phys. Lett. 116, 223501 (2020) https://doi.org/10.1063/5.0004000

Abstract

View articletitled, Charging and discharging characteristics of a single gold nanoparticle embedded in Al2O3 thin films

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Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs

Jiabei He; Jin Wei; Yang Li; Zheyang Zheng; Song Yang; Baoling Huang; Kevin J. Chen

Appl. Phys. Lett. 116, 223502 (2020) https://doi.org/10.1063/5.0007763

Abstract

View articletitled, Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs

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Oxide 2D electron gases as a reservoir of defects for resistive switching

Dror Miron; Dana Cohen-Azarzar; Barak Hoffer; Maria Baskin; Shahar Kvatinsky; Eilam Yalon; Lior Kornblum

Appl. Phys. Lett. 116, 223503 (2020) https://doi.org/10.1063/5.0003590

Abstract

View articletitled, Oxide 2D electron gases as a reservoir of defects for resistive switching

Supplementary Material

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The performance limits of epigraphene Hall sensors doped across the Dirac point

H. He; N. Shetty; T. Bauch; S. Kubatkin; T. Kaufmann; M. Cornils; R. Yakimova; S. Lara-Avila

Appl. Phys. Lett. 116, 223504 (2020) https://doi.org/10.1063/5.0006749

Abstract

View articletitled, The performance limits of epigraphene Hall sensors doped across the Dirac point

Supplementary Material

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Broadband integrative acoustic asymmetric focusing lens based on mode-conversion meta-atoms

Jiao Qian; Yin Wang; Jian-ping Xia; Yong Ge; Shou-qi Yuan; Hong-xiang Sun; Xiao-jun Liu

Appl. Phys. Lett. 116, 223505 (2020) https://doi.org/10.1063/5.0004579

Abstract

View articletitled, Broadband integrative acoustic asymmetric focusing lens based on mode-conversion meta-atoms

Supplementary Material

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Demonstration of electric double layer gating under high pressure by the development of field-effect diamond anvil cell

Shintaro Adachi; Ryo Matsumoto; Sayaka Yamamoto; Takafumi D. Yamamoto; Kensei Terashima; Yoshito Saito; Miren Esparza Echevarria; Pedro Baptista de Castro; Peng Song; Suguru Iwasaki; Hiroyuki Takeya; Yoshihiko Takano

Appl. Phys. Lett. 116, 223506 (2020) https://doi.org/10.1063/5.0004973

Abstract

View articletitled, Demonstration of electric double layer gating under high pressure by the development of field-effect diamond anvil cell

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ENERGY CONVERSION AND STORAGE

Iron-doped VSe₂ nanosheets for enhanced hydrogen evolution reaction

Chaolun Wang; Xing Wu; Xuan Zhang; Gang Mu; Panlin Li; Chen Luo; Hejun Xu; Zengfeng Di

Appl. Phys. Lett. 116, 223901 (2020) https://doi.org/10.1063/5.0008092

Abstract

View articletitled, Iron-doped VSe2 nanosheets for enhanced hydrogen evolution reaction

Supplementary Material

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Electronic structure of the clean interface between single crystal CH₃NH₃PbI₃ and an organic hole transporting material spiro-OMeTAD

Masaki Iwashita; Soichiro Yamanaka; Ryohei Tsuruta; Ko Tonami; Koki Yoshida; Kei Hayakawa; Ludmila Cojocaru; Satoshi Uchida; Kazuhiko Mase; Yasuo Nakayama

Appl. Phys. Lett. 116, 223902 (2020) https://doi.org/10.1063/5.0007364

Abstract

View articletitled, Electronic structure of the clean interface between single crystal CH3NH3PbI3 and an organic hole transporting material spiro-OMeTAD

Supplementary Material

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QUANTUM TECHNOLOGIES

Broadband generation of photon-pairs from a CMOS compatible device

In Special Collection: Quantum Sensing with Correlated Light Sources

K. Sugiura; Z. Yin; R. Okamoto; L. Zhang; L. Kang; J. Chen; P. Wu; S. T. Chu; B. E. Little; S. Takeuchi

Appl. Phys. Lett. 116, 224001 (2020) https://doi.org/10.1063/5.0009361

Abstract

View articletitled, Broadband generation of photon-pairs from a CMOS compatible device

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CHORUS

INTERDISCIPLINARY APPLIED PHYSICS

Annular stratification of acoustically levitated aqueous two-phase-system drops

Q. C. Zhong; W. J. Xie

Appl. Phys. Lett. 116, 224101 (2020) https://doi.org/10.1063/5.0008920

Abstract

View articletitled, Annular stratification of acoustically levitated aqueous two-phase-system drops

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PHOTONICS AND OPTOELECTRONICS

SURFACES AND INTERFACES

ADVANCED MATERIALS

SEMICONDUCTORS

MAGNETICS AND SPINTRONICS

DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

LOW-DIMENSIONAL MATERIALS AND NANOTECHNOLOGIES

DEVICE PHYSICS

ENERGY CONVERSION AND STORAGE

QUANTUM TECHNOLOGIES

INTERDISCIPLINARY APPLIED PHYSICS

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