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Electric-field induced second-harmonic generation of femtosecond pulses in atmospheric air
Strain-induced modulation of near-field radiative transfer
TW-scale mid-infrared pulses near 3.3 μm directly generated by dual-chirped optical parametric amplification
Ultrasonic rheology of visco-elastic materials using shear and longitudinal waves
Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
step of conductance fluctuations due to the broken time-reversal symmetry in bulk-insulating BiSbTeSe2 devices
Integrated tandem device with photoactive layer for near-infrared to visible upconversion imaging
Temporal feedback control of high-intensity laser pulses to optimize ultrafast heating of atomic clusters
Issues
PHOTONICS AND OPTOELECTRONICS
Electric-field induced second-harmonic generation of femtosecond pulses in atmospheric air
Appl. Phys. Lett. 112, 241101 (2018)
https://doi.org/10.1063/1.5030171
Strain-induced modulation of near-field radiative transfer
Appl. Phys. Lett. 112, 241104 (2018)
https://doi.org/10.1063/1.5037468
TW-scale mid-infrared pulses near 3.3 μm directly generated by dual-chirped optical parametric amplification
Appl. Phys. Lett. 112, 241105 (2018)
https://doi.org/10.1063/1.5038414
SURFACES AND INTERFACES
Anatase TiO2-based two-dimensional electron gases generated by low-energy argon-ion irradiation
Xi Yan; Hongrui Zhang; Hui Zhang; Tahira Khan; Jine Zhang; Yao Liu; Furong Han; Xiaobing Chen; Shulan Zuo; Zhaozhao Zhu; Fengxia Hu; Baogen Shen; Jirong Sun
Appl. Phys. Lett. 112, 241601 (2018)
https://doi.org/10.1063/1.5030081
Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substrates
Rami Khazaka; Yann Bogumilowicz; Anne-Marie Papon; Hugo Dansas; Hervé Boutry; Zdenek Chalupa; Valérie Lapras; Bernard Prévitali; Sylvain Maitrejean
Appl. Phys. Lett. 112, 241602 (2018)
https://doi.org/10.1063/1.5034205
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Anisotropic thermal transport in van der Waals layered alloys WSe2(1-x)Te2x
Appl. Phys. Lett. 112, 241901 (2018)
https://doi.org/10.1063/1.5028258
Tin-vacancy in diamonds for luminescent thermometry
Masfer Alkahtani; Ivan Cojocaru; Xiaohan Liu; Tobias Herzig; Jan Meijer; Johannes Küpper; Tobias Lühmann; Alexey V. Akimov; Philip R. Hemmer
Appl. Phys. Lett. 112, 241902 (2018)
https://doi.org/10.1063/1.5037053
Gas-pressure chemical vapor transport growth of millimeter-sized c-BAs single crystals with moderate thermal conductivity
Jie Xing; Evan R. Glaser; Bai Song; James C. Culbertson; Jaime A. Freitas, Jr.; Ryan A. Duncan; Keith A. Nelson; Gang Chen; Ni Ni
Appl. Phys. Lett. 112, 241903 (2018)
https://doi.org/10.1063/1.5034787
Superior mechanical flexibility and strained-engineered direct-indirect band gap transition of green phosphorene
Appl. Phys. Lett. 112, 241904 (2018)
https://doi.org/10.1063/1.5030389
Transmodal elastic metasurface for broad angle total mode conversion
Appl. Phys. Lett. 112, 241905 (2018)
https://doi.org/10.1063/1.5032157
Ultrasonic rheology of visco-elastic materials using shear and longitudinal waves
Appl. Phys. Lett. 112, 241906 (2018)
https://doi.org/10.1063/1.5029905
SEMICONDUCTORS
Structural and electronic properties of Ga2O3-Al2O3 alloys
In Special Collection:
The Dawn of Gallium Oxide Microelectronics
Appl. Phys. Lett. 112, 242101 (2018)
https://doi.org/10.1063/1.5036991
Optical signatures of deep level defects in Ga2O3
Hantian Gao; Shreyas Muralidharan; Nicholas Pronin; Md Rezaul Karim; Susan M. White; Thaddeus Asel; Geoffrey Foster; Sriram Krishnamoorthy; Siddharth Rajan; Lei R. Cao; Masataka Higashiwaki; Holger von Wenckstern; Marius Grundmann; Hongping Zhao; David C. Look; Leonard J. Brillson
Appl. Phys. Lett. 112, 242102 (2018)
https://doi.org/10.1063/1.5026770
Semiconducting lithium indium diselenide: Charge-carrier properties and the impacts of high flux thermal neutron irradiation
Daniel S. Hamm; Mikah Rust; Elan H. Herrera; Liviu Matei; Vladimir Buliga; Michael Groza; Arnold Burger; Ashley Stowe; Jeff Preston; Eric D. Lukosi
Appl. Phys. Lett. 112, 242104 (2018)
https://doi.org/10.1063/1.5028269
Effective passivation of silicon surfaces by ultrathin atomic-layer deposited niobium oxide
B. Macco; M. Bivour; J. H. Deijkers; S. B. Basuvalingam; L. E. Black; J. Melskens; B. W. H. van de Loo; W. J. H. Berghuis; M. Hermle; W. M. M. (Erwin) Kessels
Appl. Phys. Lett. 112, 242105 (2018)
https://doi.org/10.1063/1.5029346
MAGNETICS AND SPINTRONICS
A sandwich-like differential B-dot based on EACVD polycrystalline diamond slice
Appl. Phys. Lett. 112, 242402 (2018)
https://doi.org/10.1063/1.5026614
Spin-hall-active platinum thin films grown via atomic layer deposition
Richard Schlitz; Akinwumi Abimbola Amusan; Michaela Lammel; Stefanie Schlicht; Tommi Tynell; Julien Bachmann; Georg Woltersdorf; Kornelius Nielsch; Sebastian T. B. Goennenwein; Andy Thomas
Appl. Phys. Lett. 112, 242403 (2018)
https://doi.org/10.1063/1.5025472
Tunneling anisotropic magnetoresistance in fully epitaxial magnetic tunnel junctions with different barriers
B. S. Tao; L. N. Jiang; W. J. Kong; W. Z. Chen; B. S. Yang; X. Wang; C. H. Wan; H. X. Wei; M. Hehn; D. Lacour; Y. Lu; X. F. Han
Appl. Phys. Lett. 112, 242404 (2018)
https://doi.org/10.1063/1.5027909
Enhanced ferromagnetism in mechanically exfoliated CVD-carbon films prepared by using adamantane as precursor
S. Sangphet; S. Siriroj; N. Sriplai; D. Doonyapisut; S. Thila; S. Lowpa; H. Nakajima; S. Maensiri; S. Pinitsoontorn; W. Meevasana
Appl. Phys. Lett. 112, 242406 (2018)
https://doi.org/10.1063/1.5027450
Efficient spin to charge current conversion in the 2D semiconductor MoS2 by spin pumping from yttrium iron garnet
Appl. Phys. Lett. 112, 242407 (2018)
https://doi.org/10.1063/1.5030643
Switching current reduction using MgO cap layer in magnetic tunnel junctions
Appl. Phys. Lett. 112, 242408 (2018)
https://doi.org/10.1063/1.5035379
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Stability enhancement of yttrium substituted nickel zinc ferrite/PZT magnetoelectric gyrators under high power conditions
Chung Ming Leung; G. Sreenivasulu; Xin Zhuang; Min Gao; Xiao Tang; Junran Xu; Jiefang Li; G. Srinivasan; D. Viehland
Appl. Phys. Lett. 112, 242901 (2018)
https://doi.org/10.1063/1.5037339
Probing flexoelectricity via a split Hopkinson pressure bar experiment
Appl. Phys. Lett. 112, 242902 (2018)
https://doi.org/10.1063/1.5029421
Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices
Appl. Phys. Lett. 112, 242903 (2018)
https://doi.org/10.1063/1.5029402
NANOSCALE SCIENCE AND TECHNOLOGY
Determining the parameters of a random telegraph signal by digital low pass filtering
Appl. Phys. Lett. 112, 243101 (2018)
https://doi.org/10.1063/1.5033560
Local carrier distribution imaging on few-layer MoS2 exfoliated on SiO2 by scanning nonlinear dielectric microscopy
Appl. Phys. Lett. 112, 243102 (2018)
https://doi.org/10.1063/1.5032277
Tunable quantum order in bilayer Bi2Te3: Stacking dependent quantum spin Hall states
Appl. Phys. Lett. 112, 243103 (2018)
https://doi.org/10.1063/1.5038079
Fabrication method of two-photon luminescent organic nano-architectures using electron-beam irradiation
Appl. Phys. Lett. 112, 243104 (2018)
https://doi.org/10.1063/1.5025880
Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot

S. K. Gorman; M. A. Broome; M. G. House; S. J. Hile; J. G. Keizer; D. Keith; T. F. Watson; W. J. Baker; M. Y. Simmons
Appl. Phys. Lett. 112, 243105 (2018)
https://doi.org/10.1063/1.5021500
step of conductance fluctuations due to the broken time-reversal symmetry in bulk-insulating BiSbTeSe2 devices
Shuai Zhang; Xing-Chen Pan; Zhaoguo Li; Faji Xie; Yuyuan Qin; Lu Cao; Xuefeng Wang; Xinran Wang; Feng Miao; Fengqi Song; Baigeng Wang
Appl. Phys. Lett. 112, 243106 (2018)
https://doi.org/10.1063/1.5031013
The critical role of substrate disorder in valley splitting in Si quantum wells
Samuel F. Neyens; Ryan H. Foote; Brandur Thorgrimsson; T. J. Knapp; Thomas McJunkin; L. M. K. Vandersypen; Payam Amin; Nicole K. Thomas; James S. Clarke; D. E. Savage; M. G. Lagally; Mark Friesen; S. N. Coppersmith; M. A. Eriksson
Appl. Phys. Lett. 112, 243107 (2018)
https://doi.org/10.1063/1.5033447
ORGANIC ELECTRONICS AND PHOTONICS
Integrated tandem device with photoactive layer for near-infrared to visible upconversion imaging
Appl. Phys. Lett. 112, 243301 (2018)
https://doi.org/10.1063/1.5023430
DEVICE PHYSICS
BIOPHYSICS, BIOMATERIALS, LIQUIDS, AND SOFT MATTER
ENERGY CONVERSION AND STORAGE
Surface properties of lead-free halide double perovskites: Possible visible-light photo-catalysts for water splitting
Appl. Phys. Lett. 112, 243901 (2018)
https://doi.org/10.1063/1.5035274
Proton irradiation effect on thermoelectric properties of nanostructured n-type half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01
Nicholas Kempf; Chinnathambi Karthik; Brian J. Jaques; Jonathan Gigax; Lin Shao; Darryl P. Butt; Ran He; Dezhi Wang; Zhifeng Ren; Yanliang Zhang
Appl. Phys. Lett. 112, 243902 (2018)
https://doi.org/10.1063/1.5025071
Waste heat recovery in an oscillating heat pipe using interfacial electrical double layers
Qingchen Shen; Chao Chang; Peng Tao; Ziyang Ning; Shujian Rong; Yanming Liu; Chengyi Song; Jianbo Wu; Wen Shang; Tao Deng
Appl. Phys. Lett. 112, 243903 (2018)
https://doi.org/10.1063/1.5033347
Transferable and flexible thermoelectric thin films based on elemental tellurium with a large power factor
Appl. Phys. Lett. 112, 243904 (2018)
https://doi.org/10.1063/1.5034001
INTERDISCIPLINARY AND GENERAL PHYSICS
Temporal feedback control of high-intensity laser pulses to optimize ultrafast heating of atomic clusters

M. J. V. Streeter; S. J. D. Dann; J. D. E. Scott; C. D. Baird; C. D. Murphy; S. Eardley; R. A. Smith; S. Rozario; J.-N. Gruse; S. P. D. Mangles; Z. Najmudin; S. Tata; M. Krishnamurthy; S. V. Rahul; D. Hazra; P. Pourmoussavi; J. Osterhoff; J. Hah; N. Bourgeois; C. Thornton; C. D. Gregory; C. J. Hooker; O. Chekhlov; S. J. Hawkes; B. Parry; V. A. Marshall; Y. Tang; E. Springate; P. P. Rajeev; A. G. R. Thomas; D. R. Symes
Appl. Phys. Lett. 112, 244101 (2018)
https://doi.org/10.1063/1.5027297
Symmetric autobalanced Ramsey interrogation for high-performance coherent-population-trapping vapor-cell atomic clock
Appl. Phys. Lett. 112, 244102 (2018)
https://doi.org/10.1063/1.5030009
ERRATA
Erratum: “Chiral magnetoresistance in Pt/Co/Pt zigzag wires” [Appl. Phys. Lett. 110, 122401 (2017)]
Yuxiang Yin; Dong-Soo Han; June-Seo Kim; Reinoud Lavrijsen; Kyung-Jin Lee; Seo-Won Lee; Kyoung-Whan Kim; Hyun-Woo Lee; Henk J. M. Swagten; Bert Koopmans
Appl. Phys. Lett. 112, 249901 (2018)
https://doi.org/10.1063/1.5041318
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Color astrophotography with a 100 mm-diameter f/2 polymer flat lens
Apratim Majumder, Monjurul Meem, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.