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PHOTONICS AND OPTOELECTRONICS

Broadband incoherent four-wave mixing and 27 dB idler conversion efficiency using ultra-silicon rich nitride devices

J. W. Choi; B.-U. Sohn; G. F. R. Chen; D. K. T. Ng; D. T. H. Tan

Appl. Phys. Lett. 112, 181101 (2018) https://doi.org/10.1063/1.5010841

Abstract

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Optical spatial differentiator based on subwavelength high-contrast gratings

Zhewei Dong; Jiangnan Si; Xuanyi Yu; Xiaoxu Deng

Appl. Phys. Lett. 112, 181102 (2018) https://doi.org/10.1063/1.5026309

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Confinement of picosecond timescale current pulses by tapered coplanar waveguides

N. Peters; M. Rosamond; L. Li; E. H. Linfield; A. G. Davies; M. Ali; B. J. Hickey; J. Cunningham

Appl. Phys. Lett. 112, 181103 (2018) https://doi.org/10.1063/1.5027202

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Tunable magnetization of infrared epsilon-near-zero media via field-effect modulation

Mohammad Mahdi Salary; Hossein Mosallaei

Appl. Phys. Lett. 112, 181104 (2018) https://doi.org/10.1063/1.5024738

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Sub-50-as isolated extreme ultraviolet continua generated by 1.6-cycle near-infrared pulse combined with double optical gating scheme

Katsuya Oguri; Hiroki Mashiko; Tatsuya Ogawa; Yasutaka Hanada; Hidetoshi Nakano; Hideki Gotoh

Appl. Phys. Lett. 112, 181105 (2018) https://doi.org/10.1063/1.5027135

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Phase-locked, high power, mid-infrared quantum cascade laser arrays

W. Zhou; S. Slivken; M. Razeghi

Appl. Phys. Lett. 112, 181106 (2018) https://doi.org/10.1063/1.5028281

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SURFACES AND INTERFACES

Evaluating the potential energy landscape over single molecules at room temperature with lateral force microscopy

Alfred J. Weymouth; Elisabeth Riegel; Sonia Matencio; Franz J. Giessibl

Appl. Phys. Lett. 112, 181601 (2018) https://doi.org/10.1063/1.5026671

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Influence of surface crystal-orientation on transfer doping of V₂O₅/H-terminated diamond

C. Verona; F. Arciprete; M. Foffi; E. Limiti; M. Marinelli; E. Placidi; G. Prestopino; G. Verona Rinati

Appl. Phys. Lett. 112, 181602 (2018) https://doi.org/10.1063/1.5027198

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Controlling surface carrier density by illumination in the transparent conductor La-doped BaSnO₃

Edward B. Lochocki; Hanjong Paik; Masaki Uchida; Darrell G. Schlom; Kyle M. Shen

Appl. Phys. Lett. 112, 181603 (2018) https://doi.org/10.1063/1.5020716

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Separation of particles by size from a suspension using the motion of a confined bubble

Yingxian Estella Yu; Sepideh Khodaparast; Howard A. Stone

Appl. Phys. Lett. 112, 181604 (2018) https://doi.org/10.1063/1.5023341

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CHORUS

STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS

Control of thermal expansion in a low-density framework modification of silicon

Matt Beekman; James A. Kaduk; Winnie Wong-Ng; Michael Troesch; Glenn S. Lee; George S. Nolas

Appl. Phys. Lett. 112, 181901 (2018) https://doi.org/10.1063/1.5027229

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CHORUS

Pronounced photogating effect in atomically thin WSe₂ with a self-limiting surface oxide layer

Mahito Yamamoto; Keiji Ueno; Kazuhito Tsukagoshi

Appl. Phys. Lett. 112, 181902 (2018) https://doi.org/10.1063/1.5030525

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Examining the influence of grain size on radiation tolerance in the nanocrystalline regime

Christopher M. Barr; Nan Li; Brad L. Boyce; Khalid Hattar

Appl. Phys. Lett. 112, 181903 (2018) https://doi.org/10.1063/1.5016822

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Frequency-preserved non-reciprocal acoustic propagation in a granular chain

Jian-Guo Cui; Tianzhi Yang; Li-Qun Chen

Appl. Phys. Lett. 112, 181904 (2018) https://doi.org/10.1063/1.5009975

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Controllable helical deformations on printed anisotropic composite soft actuators

Dong Wang; Ling Li; Ahmad Serjouei; Longteng Dong; Oliver Weeger; Guoying Gu; Qi Ge

Appl. Phys. Lett. 112, 181905 (2018) https://doi.org/10.1063/1.5025370

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Lattice thermal transport in group II-alloyed PbTe

Yi Xia; James M. Hodges; Mercouri G. Kanatzidis; Maria K. Y. Chan

Appl. Phys. Lett. 112, 181906 (2018) https://doi.org/10.1063/1.5002587

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CHORUS

Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Raju Ahmed; M. Nazari; B. L. Hancock; J. Simpson; C. Engdahl; E. L. Piner; M. W. Holtz

Appl. Phys. Lett. 112, 181907 (2018) https://doi.org/10.1063/1.5027507

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CHORUS

SEMICONDUCTORS

Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling field-effect transistor

J. L. Padilla; C. Medina-Bailon; C. Alper; F. Gamiz; A. M. Ionescu

Appl. Phys. Lett. 112, 182101 (2018) https://doi.org/10.1063/1.5012948

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Ambipolar SnO_x thin-film transistors achieved at high sputtering power

Yunpeng Li; Jia Yang; Yunxiu Qu; Jiawei Zhang; Li Zhou; Zaixing Yang; Zhaojun Lin; Qingpu Wang; Aimin Song; Qian Xin

Appl. Phys. Lett. 112, 182102 (2018) https://doi.org/10.1063/1.5022875

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Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams

Akira Uedono; Takahiro Yamada; Takuji Hosoi; Werner Egger; Tönjes Koschine; Christoph Hugenschmidt; Marcel Dickmann; Heiji Watanabe

Appl. Phys. Lett. 112, 182103 (2018) https://doi.org/10.1063/1.5027257

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Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

Long Yan; Yuantao Zhang; Xu Han; Gaoqiang Deng; Pengchong Li; Ye Yu; Liang Chen; Xiaohang Li; Junfeng Song

Appl. Phys. Lett. 112, 182104 (2018) https://doi.org/10.1063/1.5023521

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Opposite dispersion bands at the Fermi level in ZrSe₂

A. Ghafari; M. Moustafa; G. Di Santo; L. Petaccia; C. Janowitz

Appl. Phys. Lett. 112, 182105 (2018) https://doi.org/10.1063/1.5025794

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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Shigeyoshi Usami; Yuto Ando; Atsushi Tanaka; Kentaro Nagamatsu; Manato Deki; Maki Kushimoto; Shugo Nitta; Yoshio Honda; Hiroshi Amano; Yoshihiro Sugawara; Yong-Zhao Yao; Yukari Ishikawa

Appl. Phys. Lett. 112, 182106 (2018) https://doi.org/10.1063/1.5024704

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MAGNETICS AND SPINTRONICS

A fully electric field driven scalable magnetoelectric switching element

R. Ahmed; R. H. Victora

Appl. Phys. Lett. 112, 182401 (2018) https://doi.org/10.1063/1.5023003

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Electrical transport properties and giant baroresistance effect at martensitic transformation of Ni_43.7Fe_5.3Mn_35.4In_15.6 Heusler alloy

Yuanlei Zhang; Xijia He; Zhe Li; Kun Xu; Changqin Liu; Yinsheng Huang; Chao Jing

Appl. Phys. Lett. 112, 182402 (2018) https://doi.org/10.1063/1.5023147

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Enhanced inductance in laminated multilayer magnetic planar inductor for sensitive magnetic field detection

Yao Wang; Yumei Wen; Fapeng Song; Ping Li; Shumin Yu

Appl. Phys. Lett. 112, 182403 (2018) https://doi.org/10.1063/1.5024329

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Spin transport and spin accumulation signals in Si studied in tunnel junctions with a Fe/Mg ferromagnetic multilayer and an amorphous SiO_xN_y tunnel barrier

Ryosho Nakane; Takato Hada; Shoichi Sato; Masaaki Tanaka

Appl. Phys. Lett. 112, 182404 (2018) https://doi.org/10.1063/1.5004494

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Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO₃ interface

A. Das; S. T. Jousma; A. Majumdar; T. Banerjee

Appl. Phys. Lett. 112, 182405 (2018) https://doi.org/10.1063/1.5027572

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Spin-orbit torque and spin pumping in YIG/Pt with interfacial insertion layers

Satoru Emori; Alexei Matyushov; Hyung-Min Jeon; Christopher J. Babroski; Tianxiang Nan; Amine M. Belkessam; John G. Jones; Michael E. McConney; Gail J. Brown; Brandon M. Howe; Nian X. Sun

Appl. Phys. Lett. 112, 182406 (2018) https://doi.org/10.1063/1.5025623

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CHORUS

SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

Enhanced superconducting transition temperature in electroplated rhenium

D. P. Pappas; D. E. David; R. E. Lake; M. Bal; R. B. Goldfarb; D. A. Hite; E. Kim; H.-S. Ku; J. L. Long; C. R. H. McRae; L. D. Pappas; A. Roshko; J. G. Wen; B. L. T. Plourde; I. Arslan; X. Wu

Appl. Phys. Lett. 112, 182601 (2018) https://doi.org/10.1063/1.5027104

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CHORUS

DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

Piezoelectric performance enhancement of Pb(Mg_1/3Nb_2/3)O₃-0.25PbTiO₃ crystals by alternating current polarization for ultrasonic transducer

Jialin Xu; Hao Deng; Zhou Zeng; Zhang Zhang; Kunyu Zhao; Jianwei Chen; Nami Nakamori; Feifei Wang; Jinpeng Ma; Xiaobing Li; Haosu Luo

Appl. Phys. Lett. 112, 182901 (2018) https://doi.org/10.1063/1.5027591

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Transition regime from step-flow to step-bunching in the growth of epitaxial SrRuO₃ on (001) SrTiO₃

Anna Gura; Giulia Bertino; Benjamin Bein; Matthew Dawber

Appl. Phys. Lett. 112, 182902 (2018) https://doi.org/10.1063/1.5026682

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CHORUS

Evolution from successive phase transitions to “morphotropic phase boundary” in BaTiO₃-based ferroelectrics

Chao Zhou; Xiaoqin Ke; Yonggang Yao; Sen Yang; Yuanchao Ji; Wenfeng Liu; Yaodong Yang; Lixue Zhang; Yanshuang Hao; Shuai Ren; Le Zhang; Xiaobing Ren

Appl. Phys. Lett. 112, 182903 (2018) https://doi.org/10.1063/1.5028302

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A current transient method for trap analysis in BiFeO₃ thin films

Hui Zhu; Ying Yang; Xiao Meng; Anquan Jiang; Zilong Bai; Xiang Zheng; Lei Jin; Chen Wang; Shiwei Feng

Appl. Phys. Lett. 112, 182904 (2018) https://doi.org/10.1063/1.5025424

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Evidence for existence of functional monoclinic phase in sodium niobate based solid solution by powder neutron diffraction

S. K. Mishra; Mrinal Jauhari; R. Mittal; P. S. R. Krishna; V. R. Reddy; S. L. Chaplot

Appl. Phys. Lett. 112, 182905 (2018) https://doi.org/10.1063/1.5023176

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Oxygen-vacancy-mediated dielectric property in perovskite Eu_0.5Ba_0.5TiO_3-δ epitaxial thin films

Weiwei Li; Junxing Gu; Qian He; Kelvin H. L. Zhang; Chunchang Wang; Kuijuan Jin; Yongqiang Wang; Matias Acosta; Haiyan Wang; Albina Y. Borisevich; Judith L. MacManus-Driscoll; Hao Yang

Appl. Phys. Lett. 112, 182906 (2018) https://doi.org/10.1063/1.5025607

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CHORUS

The influence of excess K₂O on the electrical properties of (K,Na)_1/2Bi_1/2TiO₃ ceramics

Linhao Li; Ming Li; Derek C. Sinclair

Appl. Phys. Lett. 112, 182907 (2018) https://doi.org/10.1063/1.5025275

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Frequency dependent polarisation switching in h-ErMnO₃

Alexander Ruff; Ziyu Li; Alois Loidl; Jakob Schaab; Manfred Fiebig; Andres Cano; Zewu Yan; Edith Bourret; Julia Glaum; Dennis Meier; Stephan Krohns

Appl. Phys. Lett. 112, 182908 (2018) https://doi.org/10.1063/1.5026732

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CHORUS

NANOSCALE SCIENCE AND TECHNOLOGY

Quasi-self-trapped Frenkel-exciton near-UV luminescence with large Stokes shift in wide-bandgap Cs₄PbCl₆ nanocrystals

Yumeng Zhang; Baolu Fan; Yuzhen Liu; Hongxia Li; Kaiming Deng; Jiyang Fan

Appl. Phys. Lett. 112, 183101 (2018) https://doi.org/10.1063/1.5026171

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Engineering few-layer MoTe₂ devices by Co/hBN tunnel contacts

Mengjian Zhu; Wei Luo; Nannan Wu; Xue-ao Zhang; Shiqiao Qin

Appl. Phys. Lett. 112, 183102 (2018) https://doi.org/10.1063/1.5027586

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Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

Xiaochi Liu; Deshun Qu; Min Sup Choi; Changmin Lee; Hyoungsub Kim; Won Jong Yoo

Appl. Phys. Lett. 112, 183103 (2018) https://doi.org/10.1063/1.5023695

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Effect of strain on the Curie temperature and band structure of low-dimensional SbSI

Yiping Wang; Yang Hu; Zhizhong Chen; Yuwei Guo; Dong Wang; Esther A. Wertz; Jian Shi

Appl. Phys. Lett. 112, 183104 (2018) https://doi.org/10.1063/1.5017490

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CHORUS

ORGANIC ELECTRONICS AND PHOTONICS

In-situ sequential laser transfer and laser reduction of graphene oxide films

S. Papazoglou; C. Petridis; E. Kymakis; S. Kennou; Y. S. Raptis; S. Chatzandroulis; I. Zergioti

Appl. Phys. Lett. 112, 183301 (2018) https://doi.org/10.1063/1.5021862

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DEVICE PHYSICS

Split-gate device for indirect excitons

C. J. Dorow; J. R. Leonard; M. M. Fogler; L. V. Butov; K. W. West; L. N. Pfeiffer

Appl. Phys. Lett. 112, 183501 (2018) https://doi.org/10.1063/1.5021488

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CHORUS

Modification of FN tunneling provoking gate-leakage current in ZTO (zinc-tin oxide) TFT by regulating the ZTO/SiO₂ area ratio

Jeng-Ting Li; Ho-Lin Tsai; Wei-Yao Lai; Weng-Sing Hwang; In-Gann Chen; Jen-Sue Chen

Appl. Phys. Lett. 112, 183502 (2018) https://doi.org/10.1063/1.5010156

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A surface impedance-based three-channel acoustic metasurface retroreflector

Chen Shen; Ana Díaz-Rubio; Junfei Li; Steven A. Cummer

Appl. Phys. Lett. 112, 183503 (2018) https://doi.org/10.1063/1.5025481

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Contact resistance change memory using N-doped Cr₂Ge₂Te₆ phase-change material showing non-bulk resistance change

Y. Shuang; Y. Sutou; S. Hatayama; S. Shindo; Y. H. Song; D. Ando; J. Koike

Appl. Phys. Lett. 112, 183504 (2018) https://doi.org/10.1063/1.5029327

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A 2 × 2 quantum dot array with controllable inter-dot tunnel couplings

Uditendu Mukhopadhyay; Juan Pablo Dehollain; Christian Reichl; Werner Wegscheider; Lieven M. K. Vandersypen

Appl. Phys. Lett. 112, 183505 (2018) https://doi.org/10.1063/1.5025928

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Low-frequency and multiple-bands sound insulation using hollow boxes with membrane-type faces

Wei-wei Yu; Li Fan; Ren-hao Ma; Hui Zhang; Shu-yi Zhang

Appl. Phys. Lett. 112, 183506 (2018) https://doi.org/10.1063/1.5028547

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BIOPHYSICS, BIOMATERIALS, LIQUIDS, AND SOFT MATTER

Motion behavior of water droplets driven by triboelectric nanogenerator

Jinhui Nie; Tao Jiang; Jiajia Shao; Zewei Ren; Yu Bai; Mitsumasa Iwamoto; Xiangyu Chen; Zhong Lin Wang

Appl. Phys. Lett. 112, 183701 (2018) https://doi.org/10.1063/1.5030152

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ERRATA

Erratum: “Thermal diffusivity of diamond nanowires studied by laser assisted atom probe tomography” [Appl. Phys. Lett. 112, 143104 (2018)]

L. Arnoldi; M. Spies; J. Houard; I. Blum; A. Etienne; R. Ismagilov; A. Obraztsov; A. Vella

Appl. Phys. Lett. 112, 189901 (2018) https://doi.org/10.1063/1.5035134

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Issues

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PHOTONICS AND OPTOELECTRONICS

SURFACES AND INTERFACES

STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS

SEMICONDUCTORS

MAGNETICS AND SPINTRONICS

SUPERCONDUCTIVITY AND SUPERCONDUCTING ELECTRONICS

DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS

NANOSCALE SCIENCE AND TECHNOLOGY

ORGANIC ELECTRONICS AND PHOTONICS

DEVICE PHYSICS

BIOPHYSICS, BIOMATERIALS, LIQUIDS, AND SOFT MATTER

ERRATA

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