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Issues
4 December 2017
ISSN 0003-6951
EISSN 1077-3118
In this Issue
PHOTONICS AND OPTOELECTRONICS
Periodic pattern of liquid crystal molecular orientation induced by ultrasound vibrations
In Special Collection:
Acoustic Tweezers
Appl. Phys. Lett. 111, 231101 (2017)
https://doi.org/10.1063/1.5010213
Polariton condensation in S- and P-flatbands in a two-dimensional Lieb lattice
S. Klembt; T. H. Harder; O. A. Egorov; K. Winkler; H. Suchomel; J. Beierlein; M. Emmerling; C. Schneider; S. Höfling
Appl. Phys. Lett. 111, 231102 (2017)
https://doi.org/10.1063/1.4995385
Single transverse mode protein laser
Itir Bakis Dogru; Kyungtaek Min; Muhammad Umar; Houman Bahmani Jalali; Efe Begar; Deniz Conkar; Elif Nur Firat Karalar; Sunghwan Kim; Sedat Nizamoglu
Appl. Phys. Lett. 111, 231103 (2017)
https://doi.org/10.1063/1.5007243
GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell
George T. Nelson; Bor-Chau Juang; Michael A. Slocum; Zachary S. Bittner; Ramesh B. Laghumavarapu; Diana L. Huffaker; Seth M. Hubbard
Appl. Phys. Lett. 111, 231104 (2017)
https://doi.org/10.1063/1.4991548
Anti-reflective coating for visible light using a silver nanodisc metasurface with a refractive index of less than 1.0
Appl. Phys. Lett. 111, 231105 (2017)
https://doi.org/10.1063/1.5000531
Optical side-band generation in THz Fabry-Perot laser cavities
Thomas G. Folland; Li Hua; Owen P. Marshall; Md. Khairuzzaman; Harvey E. Beere; David A. Ritchie; Subhasish Chakraborty
Appl. Phys. Lett. 111, 231106 (2017)
https://doi.org/10.1063/1.5001334
Optical polarization switching in semipolar InGaN multiple quantum wells induced by strain engineering
Appl. Phys. Lett. 111, 231107 (2017)
https://doi.org/10.1063/1.5005536
Submicron-quality cleaving of glass with elliptical ultrafast Bessel beams
Appl. Phys. Lett. 111, 231108 (2017)
https://doi.org/10.1063/1.5008921
Dynamic cholesteric liquid crystal superstructures photoaligned by one-step polarization holography
Appl. Phys. Lett. 111, 231109 (2017)
https://doi.org/10.1063/1.5009196
SURFACES AND INTERFACES
The evolution of droplet impacting on thin liquid film at superhydrophilic surface
Appl. Phys. Lett. 111, 231601 (2017)
https://doi.org/10.1063/1.5005837
Joint effect of gate bias and light illumination on metallic LaAlO3/SrTiO3 interface
Zhihuan Yang; Yuansha Chen; Hongrui Zhang; Hailin Huang; Shufang Wang; Shuanhu Wang; Baogen Shen; Jirong Sun
Appl. Phys. Lett. 111, 231602 (2017)
https://doi.org/10.1063/1.5009790
Realization of an atomically flat BaSnO3(001) substrate with SnO2 termination
Woong-Jhae Lee; Hwangho Lee; Kyung-Tae Ko; Jeonghun Kang; Hyung Joon Kim; Takhee Lee; Jae-Hoon Park; Kee Hoon Kim
Appl. Phys. Lett. 111, 231604 (2017)
https://doi.org/10.1063/1.4997238
Photo-oxidative doping in π-conjugated zig-zag chain of carbon atoms with sulfur-functional group
Appl. Phys. Lett. 111, 231605 (2017)
https://doi.org/10.1063/1.4990570
STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS
Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering
Danhua Yan; Wenrui Zhang; Jiajie Cen; Eli Stavitski; Jerzy T. Sadowski; Elio Vescovo; Andrew Walter; Klaus Attenkofer; Darío J. Stacchiola; Mingzhao Liu
Appl. Phys. Lett. 111, 231901 (2017)
https://doi.org/10.1063/1.5001043
Mechanical low-frequency filter via modes separation in 3D periodic structures
Appl. Phys. Lett. 111, 231902 (2017)
https://doi.org/10.1063/1.4995554
Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
N. Le Biavan; M. Hugues; M. Montes Bajo; J. Tamayo-Arriola; A. Jollivet; D. Lefebvre; Y. Cordier; B. Vinter; F.-H. Julien; A. Hierro; J.-M. Chauveau
Appl. Phys. Lett. 111, 231903 (2017)
https://doi.org/10.1063/1.5003146
Spatial and directional control of self-assembled wrinkle patterns by UV light absorption
Appl. Phys. Lett. 111, 231904 (2017)
https://doi.org/10.1063/1.5005978
SEMICONDUCTORS
Doping induced enhanced density of states in bismuth telluride
Appl. Phys. Lett. 111, 232101 (2017)
https://doi.org/10.1063/1.4989602
Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN
Edith Perret; Dongwei Xu; M. J. Highland; G. B. Stephenson; P. Zapol; P. H. Fuoss; A. Munkholm; Carol Thompson
Appl. Phys. Lett. 111, 232102 (2017)
https://doi.org/10.1063/1.4993788
Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior
Appl. Phys. Lett. 111, 232103 (2017)
https://doi.org/10.1063/1.4999011
Hydrogen-dependent low frequency noise and its physical mechanism of HfO2 resistance change random access memory
Appl. Phys. Lett. 111, 232104 (2017)
https://doi.org/10.1063/1.4997397
Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films
Appl. Phys. Lett. 111, 232105 (2017)
https://doi.org/10.1063/1.5000880
MAGNETICS AND SPINTRONICS
Anion vacancy-mediated ferromagnetism in atomic-thick Ni3N nanosheets
Baorui Xia; Tongtong Wang; Xiao Chi; Xiaojiang Yu; Peitao Liu; Jingyan Zhang; Shibo Xi; Yonghua Du; Daqiang Gao
Appl. Phys. Lett. 111, 232402 (2017)
https://doi.org/10.1063/1.5016326
Layer-sensitive magneto-optical Kerr effect study of magnetization reversal in Fe/MnAs/GaAs(001)
Appl. Phys. Lett. 111, 232403 (2017)
https://doi.org/10.1063/1.5004248
Tuning the metamagnetism in a metallic helical antiferromagnet
Appl. Phys. Lett. 111, 232404 (2017)
https://doi.org/10.1063/1.5004667
Antidamping spin-orbit torques in epitaxial-Py(100)/β-Ta
Dhananjay Tiwari; Nilamani Behera; Akash Kumar; Philipp Dürrenfeld; Sujeet Chaudhary; D. K. Pandya; Johan Åkerman; P. K. Muduli
Appl. Phys. Lett. 111, 232407 (2017)
https://doi.org/10.1063/1.5007202
Epitaxial growth of high quality SrFeO3 films on (001) oriented (LaAlO3)0.3(Sr2TaAlO6)0.7
Appl. Phys. Lett. 111, 232408 (2017)
https://doi.org/10.1063/1.5002672
DIELECTRICS, FERROELECTRICS, AND MULTIFERROICS
Photo-induced persistent enhancement of dielectric permittivity in Zn:BaAl2O4
Appl. Phys. Lett. 111, 232902 (2017)
https://doi.org/10.1063/1.5001369
Switching the magnetically induced polarization of Co4Nb2O9 by dielectric-relaxation-related internal electric field
Appl. Phys. Lett. 111, 232903 (2017)
https://doi.org/10.1063/1.5005580
NANOSCALE SCIENCE AND TECHNOLOGY
Effects of Mn dopant locations on the electronic bandgap of PbS quantum dots
Appl. Phys. Lett. 111, 233101 (2017)
https://doi.org/10.1063/1.5004463
Atom manipulation method to substitute individual adsorbate atoms into a Si(111)-(7 × 7) substrate at room temperature
Appl. Phys. Lett. 111, 233102 (2017)
https://doi.org/10.1063/1.5008503
Fabrication and characterization of a germanium nanowire light emitting diode
Appl. Phys. Lett. 111, 233103 (2017)
https://doi.org/10.1063/1.5006152
Direct imaging of sketched conductive nanostructures at the LaAlO3/SrTiO3 interface
Zhanzhi Jiang; Xiaoyu Wu; Hyungwoo Lee; Jung-Woo Lee; Jianan Li; Guanglei Cheng; Chang-Beom Eom; Jeremy Levy; Keji Lai
Appl. Phys. Lett. 111, 233104 (2017)
https://doi.org/10.1063/1.5005917
ORGANIC ELECTRONICS AND PHOTONICS
Understanding the grain-growth mechanism of high-performance organic semiconducting diphenyl-dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene molecules
Jung-Hwa Kim; Young-Nam Kwon; Eunkyung Lee; Ji Young Jung; Joo-Young Kim; Jaikwang Shin; Jeong-Il Park; Ajeong Choi
Appl. Phys. Lett. 111, 233301 (2017)
https://doi.org/10.1063/1.4999966
Temperature-dependent electronic properties of inorganic-organic hybrid halide perovskite (CH3NH3PbBr3) single crystal
Xiaolei Cui; Sijian Yuan; Huotian Zhang; Xin Zhang; Pengfei Wang; Li Tu; Zhengyi Sun; Jiao Wang; Yiqiang Zhan; Lirong Zheng
Appl. Phys. Lett. 111, 233302 (2017)
https://doi.org/10.1063/1.5005005
Comparative study of organic transistors with different graphene electrodes fabricated using a simple patterning method
Appl. Phys. Lett. 111, 233303 (2017)
https://doi.org/10.1063/1.4997780
Low turn-on voltage perovskite light-emitting diodes with methanol treated PEDOT:PSS as hole transport layer
Appl. Phys. Lett. 111, 233304 (2017)
https://doi.org/10.1063/1.5010245
In-situ observation of stacking fault evolution in vacuum-deposited C60
Appl. Phys. Lett. 111, 233305 (2017)
https://doi.org/10.1063/1.4995571
DEVICE PHYSICS
Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells
Appl. Phys. Lett. 111, 233501 (2017)
https://doi.org/10.1063/1.5003112
S-band microwave radiation by a high-impedance diode with an A6 anode block
Appl. Phys. Lett. 111, 233503 (2017)
https://doi.org/10.1063/1.5007804
Photonic-band-gap gyrotron amplifier with picosecond pulses
Appl. Phys. Lett. 111, 233504 (2017)
https://doi.org/10.1063/1.5006348
Charge carrier velocity in graphene field-effect transistors
Appl. Phys. Lett. 111, 233505 (2017)
https://doi.org/10.1063/1.5003684
Production of intense, pulsed, and point-like neutron source from deuterated plastic cavity by mono-directional kilo-joule laser irradiation
Y. Abe; A. Sunahara; S. Lee; T. Yanagawa; Z. Zhang; Y. Arikawa; A. Morace; T. Nagai; T. Ikenouchi; S. Tosaki; S. Kojima; S. Sakata; N. Satoh; T. Watari; K. Nishihara; T. Kawashima; A. Yogo; H. Sakagami; H. Shiraga; H. Nishimura; K. Mima; H. Azechi; T. Norimatsu; M. Nakai; S. Fujioka
Appl. Phys. Lett. 111, 233506 (2017)
https://doi.org/10.1063/1.5016531
Maskless regrowth of GaN for trenched devices by MOCVD
Appl. Phys. Lett. 111, 233507 (2017)
https://doi.org/10.1063/1.5003257
Magnetic two-dimensional field effect transistor
Appl. Phys. Lett. 111, 233508 (2017)
https://doi.org/10.1063/1.4994634
Internal stress-assisted epitaxial lift-off process for flexible thin film (In)GaAs solar cells on metal foil
Appl. Phys. Lett. 111, 233509 (2017)
https://doi.org/10.1063/1.5001357
Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices
Appl. Phys. Lett. 111, 233510 (2017)
https://doi.org/10.1063/1.4996618
Quantum ballistic transport in strained epitaxial germanium
Y. Gul; S. N. Holmes; P. J. Newton; D. J. P. Ellis; C. Morrison; M. Pepper; C. H. W. Barnes; M. Myronov
Appl. Phys. Lett. 111, 233512 (2017)
https://doi.org/10.1063/1.5008969
Gate tunable parallel double quantum dots in InAs double-nanowire devices
S. Baba; S. Matsuo; H. Kamata; R. S. Deacon; A. Oiwa; K. Li; S. Jeppesen; L. Samuelson; H. Q. Xu; S. Tarucha
Appl. Phys. Lett. 111, 233513 (2017)
https://doi.org/10.1063/1.4997646
ENERGY CONVERSION AND STORAGE
Separating grain-boundary and bulk recombination with time-resolved photoluminescence microscopy
Appl. Phys. Lett. 111, 233902 (2017)
https://doi.org/10.1063/1.5010931
INTERDISCIPLINARY AND GENERAL PHYSICS
Wetting of inclined nano-textured surfaces by self-healing agents
Appl. Phys. Lett. 111, 234101 (2017)
https://doi.org/10.1063/1.5010204
A planar surface acoustic wave micropump for closed-loop microfluidics
Appl. Phys. Lett. 111, 234102 (2017)
https://doi.org/10.1063/1.5007701
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Kirchhoff's law violation within the main solar wavelength range
Yubin Park, Shanhui Fan
In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system
Cameron A. Gorsak, Henry J. Bowman, et al.